JP3710573B2 - 窒化ガリウム系化合物半導体発光素子の電極構造 - Google Patents

窒化ガリウム系化合物半導体発光素子の電極構造 Download PDF

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Publication number
JP3710573B2
JP3710573B2 JP25787996A JP25787996A JP3710573B2 JP 3710573 B2 JP3710573 B2 JP 3710573B2 JP 25787996 A JP25787996 A JP 25787996A JP 25787996 A JP25787996 A JP 25787996A JP 3710573 B2 JP3710573 B2 JP 3710573B2
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Prior art keywords
electrode
gallium nitride
compound semiconductor
bonding
semiconductor light
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Expired - Fee Related
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JP25787996A
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Japanese (ja)
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JPH10107318A5 (enExample
JPH10107318A (ja
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俊雄 幡
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Sharp Corp
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Sharp Corp
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Priority to JP25787996A priority Critical patent/JP3710573B2/ja
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Publication of JPH10107318A5 publication Critical patent/JPH10107318A5/ja
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JP25787996A 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造 Expired - Fee Related JP3710573B2 (ja)

Priority Applications (1)

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JP25787996A JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

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Application Number Priority Date Filing Date Title
JP25787996A JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

Publications (3)

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JPH10107318A JPH10107318A (ja) 1998-04-24
JPH10107318A5 JPH10107318A5 (enExample) 2005-06-09
JP3710573B2 true JP3710573B2 (ja) 2005-10-26

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JP25787996A Expired - Fee Related JP3710573B2 (ja) 1996-09-30 1996-09-30 窒化ガリウム系化合物半導体発光素子の電極構造

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201264B1 (en) * 1999-01-14 2001-03-13 Lumileds Lighting, U.S., Llc Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP5515431B2 (ja) * 2008-06-16 2014-06-11 豊田合成株式会社 半導体発光素子、その電極並びに製造方法及びランプ
CN102124574B (zh) 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯

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JPH10107318A (ja) 1998-04-24

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