JPH10107011A - プラズマ処理装置 - Google Patents
プラズマ処理装置Info
- Publication number
- JPH10107011A JPH10107011A JP8275392A JP27539296A JPH10107011A JP H10107011 A JPH10107011 A JP H10107011A JP 8275392 A JP8275392 A JP 8275392A JP 27539296 A JP27539296 A JP 27539296A JP H10107011 A JPH10107011 A JP H10107011A
- Authority
- JP
- Japan
- Prior art keywords
- mode
- plasma
- microwave
- waveguide
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000644 propagated effect Effects 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 230000005684 electric field Effects 0.000 abstract description 35
- 238000000034 method Methods 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8275392A JPH10107011A (ja) | 1996-09-26 | 1996-09-26 | プラズマ処理装置 |
| US08/936,820 US5874706A (en) | 1996-09-26 | 1997-09-24 | Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field |
| KR1019970048683A KR100405932B1 (ko) | 1996-09-26 | 1997-09-25 | 마이크로파플라즈마처리장치 |
| TW086113974A TW362238B (en) | 1996-09-26 | 1997-09-25 | Microwave plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8275392A JPH10107011A (ja) | 1996-09-26 | 1996-09-26 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10107011A true JPH10107011A (ja) | 1998-04-24 |
| JPH10107011A5 JPH10107011A5 (enExample) | 2004-09-30 |
Family
ID=17554865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8275392A Pending JPH10107011A (ja) | 1996-09-26 | 1996-09-26 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10107011A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358127A (ja) * | 2000-06-14 | 2001-12-26 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2002289398A (ja) * | 2001-01-18 | 2002-10-04 | Tokyo Electron Ltd | プラズマ装置およびプラズマ生成方法 |
| CN1293789C (zh) * | 2001-01-18 | 2007-01-03 | 东京毅力科创株式会社 | 等离子体装置及等离子体生成方法 |
| US8075733B2 (en) | 2008-08-25 | 2011-12-13 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
-
1996
- 1996-09-26 JP JP8275392A patent/JPH10107011A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358127A (ja) * | 2000-06-14 | 2001-12-26 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2002289398A (ja) * | 2001-01-18 | 2002-10-04 | Tokyo Electron Ltd | プラズマ装置およびプラズマ生成方法 |
| CN1293789C (zh) * | 2001-01-18 | 2007-01-03 | 东京毅力科创株式会社 | 等离子体装置及等离子体生成方法 |
| US7243610B2 (en) | 2001-01-18 | 2007-07-17 | Tokyo Electron Limited | Plasma device and plasma generating method |
| US8075733B2 (en) | 2008-08-25 | 2011-12-13 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
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