JPH09508755A - 受動的qスイッチピコ秒マイクロレーザー - Google Patents
受動的qスイッチピコ秒マイクロレーザーInfo
- Publication number
- JPH09508755A JPH09508755A JP7521349A JP52134995A JPH09508755A JP H09508755 A JPH09508755 A JP H09508755A JP 7521349 A JP7521349 A JP 7521349A JP 52134995 A JP52134995 A JP 52134995A JP H09508755 A JPH09508755 A JP H09508755A
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- saturable absorber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/08—Generation of pulses with special temporal shape or frequency spectrum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
- H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Lasers (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Laser Surgery Devices (AREA)
- Radiation-Therapy Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.a)第1鏡(16)と第2鏡(18)の間に形成された共振空洞と、 b)レーザー利得を生成するために該共振空洞内に配設された利得媒体(12) と、 c)該利得媒体(12)を付勢するためのポンプ源(22)と、 d)該共振空洞内に配設された可飽和吸収器(14)とを具備し、該可飽和吸収 器(14)、該第2鏡(18)、及び該レーザー利得が、出力パルス(24)が 発生され、該パルスは、約1ナノ秒よりも小さな持続時間を有する如く選択され ることを特徴とする受動的Qスイッチレーザー。 2.a)第1鏡(16)と第2鏡(18)の間に形成された共振空洞と、 b)レーザー利得を生成するために該共振空洞内に配設された利得媒体(12) と、 c)該利得媒体(12)を付勢するためのポンプ源(22)と、 d)該共振空洞内に配設された可飽和吸収器(14)とを具備し、該可飽和吸収 器(14)、該第2鏡(18)、及び該レーザー利得が、出力パルス(24)が 発生され、該パルスは、約10キロワットよりも大きなピークパワーを有する如 く選択されることを特徴とする受動的Qスイッチレーザー。 3.a)第1鏡(16)と第2鏡(18)の間に形成された共振空洞と、 b)レーザー利得を生成するために該共振空洞内に配設された利得媒体 (12)と、 c)該利得媒体(12)を付勢するためのポンプ源(22)と、 d)該共振空洞内に配設された可飽和吸収器(14)とを具備し、該可飽和吸収 器(14)、該第2鏡(18)、及び該レーザー利得が、出力パルス(24)が 発生され、該パルスは、該ポンプ源(22)パワーの約10,000倍よりも大 きなピークパワーを有する如く選択されることを特徴とする受動的Qスイッチレ ーザー。 4.該第2鏡(18)が、反射率Rを有する出力カプラーであり、ここで、 R=exp(γpar,rt−κγsat,rt) であり、κは、0.0〜1.5の範囲にあり、γsat,rt、は、往復空洞内可飽 和損失定数であり、そしてγpar,rtは、往復空洞内不飽和寄生損失定数である 先行する請求の範囲のいずれか一つに記載のレーザー。 5.該利得媒体(12)と該可飽和吸収器(14)が、共通ホストにおけるド ーパントから成る2つの分離材料であり、この場合、該利得媒体(12)と該可 飽和吸収器(14)が、拡散結合によって接合される先行する請求の範囲のいず れか一つに記載のレーザー。 6.該利得媒体(12)と該可飽和吸収器(14)が、同一結晶である先行す る請求の範囲のいずれか一つに記載のレーザー。 7.該利得媒体(12)が、該可飽和吸収器(14)上にエピタキシャル成長 され、又は該可飽和吸収器(14)が、該利得媒体(12)上にエピタキシャル 成長される先行する請求の範囲のいずれか一つに記載のレーザー。 8.該ポンプ源(22)が、ポンプ光エネルギーを伝達するための光 ファイバーを具備し、該光ファイバーが、該光エネルギーにより該利得媒体(1 2)をポンピングするために該第1鏡(16)へ光結合される先行する請求の範 囲のいずれか一つに記載のレーザー。 9.該レーザーによって発せられた該パルス(24)の周波数変換のために、 該第2鏡(18)に近接して配設された非線形光結晶をさらに具備する先行する 請求の範囲のいずれか一つに記載のレーザー。 10.該共振空洞が、2mm長よりも小さい先行する請求の範囲のいずれか一 つに記載のレーザー。 11.該可飽和吸収器(14)が、該出力パルス(24)波長において高透光 性で、かつ該ポンプ源(22)によって発せられた光に高反射性の界面(20) において該利得媒体(12)に隣接して配設される先行する請求の範囲のいずれ か一つに記載のレーザー。 12.a)第1鏡(16)と第2鏡(18)の間に共振空洞を形成する段階と 、 b)レーザー利得を生成するために該共振空洞内に利得媒体(12)を配設する 段階と、 c)該利得媒体(12)をポンプ源(22)で付勢する段階と、 d)該共振空洞内に可飽和吸収器(14)を配設する段階とを具備し、該可飽和 吸収器(14)、該第2鏡、及び該レーザー利得が、出力パルス(24)が発生 され、該パルスは、約1ナノ秒よりも小さな持続時間を有する如く選択されるこ とを特徴とする受動的Qスイッチレーザーで光パルスを発生する方法。 13.a)第1鏡(16)と第2鏡(18)の間に共振空洞を形成する段階と 、 b)レーザー利得を生成するために該共振空洞内に利得媒体(12)を配設する 段階と、 c)該利得媒体(12)をポンプ源(22)で付勢する段階と、 d)該共振空洞内に可飽和吸収器(14)を配設する段階とを具備し、該可飽和 吸収器(14)、該第2鏡、及び該レーザー利得が、出力パルス(24)が発生 され、該パルスは、約10キロワットよりも大きなピークパワーを有する如く選 択されることを特徴とする受動的Qスイッチレーザーで光パルスを発生する方法 。 14.a)第1鏡(16)と第2鏡(18)の間に共振空洞を形成する段階と 、 b)レーザー利得を生成するために該共振空洞内に利得媒体(12)を配設する 段階と、 c)該利得媒体(12)をポンプ源(22)で付勢する段階と、 d)該共振空洞内に可飽和吸収器(14)を配設する段階とを具備し、該可飽和 吸収器(14)、該第2鏡、及び該レーザー利得が、出力パルス(24)が発生 され、該パルスは、該ポンプ(22)パワーの約10,000倍よりも大きなピ ークパワーを有する如く選択されることを特徴とする受動的Qスイッチレーザー で光パルスを発生する方法。 15.該第2鏡(18)が、反射率Rを有する出力カプラーであり、ここで、 R=exp(γpar,rt−κγsat,rt) であり、κは、0.0〜1.5の範囲にあり、γsat,rt、は、往復空洞内可飽 和損失定数であり、そしてγpar,rt、は、往復空洞内不飽和寄生損失定数であ る請求の範囲12〜14のいずれか一つに記載の方法。 16.該利得媒体(12)と該可飽和吸収器(14)を拡散結合する段階を具 備し、この場合、該利得媒体(12)と該可飽和吸収半(14)が、共通ホスト におけるドーパントから成る2つの分離材料である請求の範囲12〜15のいず れか一つに記載の方法。 17.該利得媒体(12)と該可飽和吸収器(14)が、同一結晶である請求 の範囲12〜16のいずれか一つに記載の方法。 18.該利得媒体(12)を該可飽和吸収器(14)上にエピタキシャル成長 するか、又は該可飽和吸収器(14)を該利得媒体(12)上にエピタキシャル 成長する段階をさらに具備する請求の範囲12〜17のいずれか一つに記載の方 法。 19.該ポンプ源(22)が、ポンプ源エネルギーを伝達するための光ファイ バーを具備し、該光ファイバーが、該光エネルギーにより該利得媒体(12)を ポンピングするために該第1鏡(16)へ光結合される請求の範囲12〜18の いずれか一つに記載の方法。 20.該レーザーによって発せられた該パルス(24)の周波数変換のために 、該第2鏡(18)に近接して非線形光結晶を配設する段階をさらに具備する請 求の範囲12〜19のいずれか一つに記載の方法。 21.該出力パルス(24)波長において高透光性で、かつ該ポンプ源(22 )によって発せられた光に高反射性の界面(20)において該利得媒体(12) に隣接して該可飽和吸収器(14)を配設する段階をさらに具備する請求の範囲 12〜20のいずれか一つに記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19378194A | 1994-02-08 | 1994-02-08 | |
US08/193,781 | 1994-02-08 | ||
US08/206,124 | 1994-03-04 | ||
US08/206,124 US5394413A (en) | 1994-02-08 | 1994-03-04 | Passively Q-switched picosecond microlaser |
PCT/US1995/001701 WO1995022186A1 (en) | 1994-02-08 | 1995-02-08 | Passively q-switched picosecond microlaser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09508755A true JPH09508755A (ja) | 1997-09-02 |
JP3843374B2 JP3843374B2 (ja) | 2006-11-08 |
Family
ID=26889340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52134995A Expired - Lifetime JP3843374B2 (ja) | 1994-02-08 | 1995-02-08 | 受動的qスイッチピコ秒マイクロレーザー |
Country Status (7)
Country | Link |
---|---|
US (2) | US5394413A (ja) |
EP (1) | EP0744089B1 (ja) |
JP (1) | JP3843374B2 (ja) |
CA (1) | CA2182368C (ja) |
DE (1) | DE69504475T2 (ja) |
ES (1) | ES2120733T3 (ja) |
WO (1) | WO1995022186A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002516984A (ja) * | 1998-05-28 | 2002-06-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 構造物の性質を測定する装置及び方法 |
JP2007059591A (ja) * | 2005-08-24 | 2007-03-08 | Mitsubishi Heavy Ind Ltd | 光励起ディスク型固体レーザ共振器、光励起ディスク型固体レーザシステム |
JP2010199288A (ja) * | 2009-02-25 | 2010-09-09 | Hamamatsu Photonics Kk | パルスレーザ装置 |
JP2017005069A (ja) * | 2015-06-09 | 2017-01-05 | 浜松ホトニクス株式会社 | レーザ装置 |
WO2017060967A1 (ja) * | 2015-10-06 | 2017-04-13 | 株式会社島津製作所 | 波長変換装置 |
JP2020127051A (ja) * | 2015-12-02 | 2020-08-20 | 株式会社リコー | レーザ装置、点火装置及び内燃機関 |
JP2021530116A (ja) * | 2018-06-22 | 2021-11-04 | キャンデラ コーポレイション | キャビティ内コーティングを備えたパッシブqスイッチマイクロチップレーザー、及びそのマイクロチップレーザーを備えたハンドピース |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4336947A1 (de) * | 1993-03-27 | 1995-05-04 | Laser Medizin Zentrum Ggmbh Be | Langpuls-Laser mit Resonatorverlängerung mittels optischem Wellenleiter |
FR2715514B1 (fr) * | 1994-01-21 | 1996-02-16 | Commissariat Energie Atomique | Laser à direction de faisceau controlable. |
FR2725279B1 (fr) * | 1994-10-04 | 1996-10-25 | Commissariat Energie Atomique | Dispositif de telemetrie comportant un microlaser |
KR0149770B1 (ko) * | 1995-02-25 | 1998-12-01 | 심상철 | 이중공진기구조를 지닌 수동 q-스위치 레이저 |
FR2734094B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche |
FR2734092B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Microlaser monolithique declenche et materiau non lineaire intracavite |
FR2734093B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Oscillateur parametrique optique monolithique pompe par un microlaser |
FR2734096B1 (fr) * | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement passif et a commande externe |
FR2736217B1 (fr) * | 1995-06-27 | 1997-08-08 | Commissariat Energie Atomique | Cavite microlaser et microlaser solide impulsionnel a declenchement actif par micromodulateur |
US5610934A (en) * | 1995-10-13 | 1997-03-11 | Polaroid Corporation | Miniaturized intracavity frequency-doubled blue laser |
US5859867A (en) * | 1995-11-30 | 1999-01-12 | Massachusetts Institute Of Technology | Microlaser |
US5802083A (en) * | 1995-12-11 | 1998-09-01 | Milton Birnbaum | Saturable absorber Q-switches for 2-μm lasers |
SE9603288L (sv) * | 1996-02-20 | 1997-08-21 | Geotronics Ab | Stabilisering av en pumpad lasesr |
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Also Published As
Publication number | Publication date |
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DE69504475T2 (de) | 1999-04-22 |
CA2182368C (en) | 2004-08-17 |
US5483546A (en) | 1996-01-09 |
EP0744089A1 (en) | 1996-11-27 |
ES2120733T3 (es) | 1998-11-01 |
JP3843374B2 (ja) | 2006-11-08 |
CA2182368A1 (en) | 1995-08-17 |
DE69504475D1 (de) | 1998-10-08 |
WO1995022186A1 (en) | 1995-08-17 |
EP0744089B1 (en) | 1998-09-02 |
US5394413A (en) | 1995-02-28 |
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