JPH09190994A - ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄 - Google Patents

ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄

Info

Publication number
JPH09190994A
JPH09190994A JP8300785A JP30078596A JPH09190994A JP H09190994 A JPH09190994 A JP H09190994A JP 8300785 A JP8300785 A JP 8300785A JP 30078596 A JP30078596 A JP 30078596A JP H09190994 A JPH09190994 A JP H09190994A
Authority
JP
Japan
Prior art keywords
silicon
wafer
silicon wafer
cleaning
silicic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8300785A
Other languages
English (en)
Japanese (ja)
Inventor
Michael F Pas
エフ．パス マイケル
Jin-Goo Park
パーク ジン−グー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH09190994A publication Critical patent/JPH09190994A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
JP8300785A 1995-10-05 1996-10-07 ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄 Pending JPH09190994A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US481995P 1995-10-05 1995-10-05
US004819 1995-10-05

Publications (1)

Publication Number Publication Date
JPH09190994A true JPH09190994A (ja) 1997-07-22

Family

ID=21712687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8300785A Pending JPH09190994A (ja) 1995-10-05 1996-10-07 ケイ酸残留物の生成を防止のためのフッ酸処理後の脱イオン水／オゾン洗浄

Country Status (3)

Country Link
EP (1) EP0767487A1 (https=)
JP (1) JPH09190994A (https=)
KR (1) KR970023890A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483037B1 (ko) * 1997-12-27 2005-07-29 주식회사 하이닉스반도체 반도체웨이퍼세정방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001526460A (ja) 1997-12-10 2001-12-18 シーエフエムテイ・インコーポレーテツド 電子部品製造の湿式加工法
KR100526453B1 (ko) * 1998-12-31 2005-12-21 주식회사 하이닉스반도체 반도체 플래쉬 이이피롬 소자 제조방법
US6848455B1 (en) 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
WO2023094327A1 (de) * 2021-11-23 2023-06-01 Singulus Technologies Ag Verfahren und nassbank zur in-line-prozessierung von solarzellensubstraten

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749640A (en) * 1986-09-02 1988-06-07 Monsanto Company Integrated circuit manufacturing process
JP3261683B2 (ja) * 1991-05-31 2002-03-04 忠弘 大見 半導体の洗浄方法及び洗浄装置
US5516730A (en) * 1994-08-26 1996-05-14 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process of wafers
DE4432738A1 (de) * 1994-09-14 1996-03-21 Siemens Ag Verfahren zum naßchemischen Entfernen von Kontaminationen auf Halbleiterkristalloberflächen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483037B1 (ko) * 1997-12-27 2005-07-29 주식회사 하이닉스반도체 반도체웨이퍼세정방법

Also Published As

Publication number Publication date
EP0767487A1 (en) 1997-04-09
KR970023890A (https=) 1997-05-30

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