JPH088207B2 - Spray development method - Google Patents
Spray development methodInfo
- Publication number
- JPH088207B2 JPH088207B2 JP1148907A JP14890789A JPH088207B2 JP H088207 B2 JPH088207 B2 JP H088207B2 JP 1148907 A JP1148907 A JP 1148907A JP 14890789 A JP14890789 A JP 14890789A JP H088207 B2 JPH088207 B2 JP H088207B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- slit
- spray nozzle
- spray
- peripheral portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔概要〕 本発明はフォトマスク等の基板のスプレー現像方法に
関し， 現像寸法の均一化とレジスト残渣の除去を目的とし， スプレーノイズ（１）の先端に設けたスリット（２）
の形状を、鋭角部と対向する短辺を有する楔型とし、該
基板（３）の周辺部から該スリット（２）の先端までの
距離を、該基板（３）の中心部から該スリット（２）の
先端までの距離より短くして、該スリットの前記鋭角部
を該基板の中心部に対向させ、該スリットの前記短辺を
該基板の周辺部に対向させるように配置し、該スプレー
ノズル（１）より該基板（３）上に現像液を噴射するこ
とにより構成する。DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention relates to a spray developing method for a substrate such as a photomask. A slit (1) is provided at the tip of the spray noise (1) for the purpose of uniformizing the developing dimension and removing the resist residue. 2)
Is shaped like a wedge having a short side facing the acute angle portion, and the distance from the peripheral portion of the substrate (3) to the tip of the slit (2) is the distance from the central portion of the substrate (3) to the slit ( The distance is shorter than the distance to the tip of 2), the acute angle portion of the slit is arranged to face the central portion of the substrate, and the short side of the slit is arranged to face the peripheral portion of the substrate. It is constituted by spraying a developing solution onto the substrate (3) from a nozzle (1).
本発明はフォトマスク等の基板のスプレー現像方法に
関する。The present invention relates to a spray developing method for a substrate such as a photomask.
集積回路の高集積化・微細化にともない，フォトマス
ク等の基板に要求されるパターンの寸法や分布の精度も
益々きびしくなってきている。With the high integration and miniaturization of integrated circuits, the precision of pattern dimensions and distribution required for substrates such as photomasks has become more and more severe.
このため，フォトマスク等の基板の現像工程では，浸
漬処理に替わり，スプレー現像が多く行われてきてい
る。For this reason, in the process of developing a substrate such as a photomask, spray development has been frequently performed instead of immersion treatment.
第３図は従来例の説明図である。 FIG. 3 is an explanatory diagram of a conventional example.
図において,13はスプレーノズル,14は基板,15は真空
チャック,16はカップ,17は跳ね返り防止板,18は噴射面
である。In the figure, 13 is a spray nozzle, 14 is a substrate, 15 is a vacuum chuck, 16 is a cup, 17 is a bounce prevention plate, and 18 is an ejection surface.
スプレー現像の利点としては，処理の自動化が容易で
あること，現像パターンの寸法分布の均一性が高いこ
と，スプレーノズルから噴射された現像液が常に新鮮で
あること，現像液の使用量が大幅に削減できること等が
挙げられる。The advantages of spray development are that process automation is easy, the size distribution of the development pattern is highly uniform, the developer sprayed from the spray nozzle is always fresh, and the amount of developer used is large. It can be reduced to.
しかし，更に厳しい精度が要求されている現状では，
フォトマスク等の基板面内の寸法のばらつきには対処し
きれない状態にある。However, in the present situation where more strict accuracy is required,
It is in a state where it is not possible to cope with variations in the dimensions of the substrate such as a photomask.
その要因としては，次のようなことが影響している。 The following factors have influenced this.
第３図（ａ）に均等扇形のスプレーノズル13を有する
現像装置の断面図を示す。この装置において，現像時，
フォトマスク等の基板14が真空チャック15で固定され，
回転している。この基板14の噴射面18に現像液が扇形状
に噴射される。FIG. 3A shows a sectional view of a developing device having a uniform fan-shaped spray nozzle 13. In this device, during development,
A substrate 14 such as a photomask is fixed by a vacuum chuck 15,
It's spinning. The developer is sprayed in a fan shape onto the spray surface 18 of the substrate 14.
そのため，第３図（ｂ）に基板14上の噴射面18を斜視
図で示したように，基板14の回転が中心部は遅く，周辺
部が早い。均等扇形のスプレーノズル13では中心ｏから
周辺ｒの直線上の噴射面に均等に現像液が噴射されるた
め，スプレーノズル13から噴射される現像液の量が，基
板14の周辺部と中心部では異なり，中心部に多く，周辺
部程少なくなる。Therefore, as shown in the perspective view of the ejection surface 18 on the substrate 14 in FIG. 3 (b), the rotation of the substrate 14 is slow in the central portion and fast in the peripheral portion. In the uniform fan-shaped spray nozzle 13, since the developing solution is evenly sprayed onto the spray surface on the straight line from the center o to the periphery r, the amount of the developing solution sprayed from the spray nozzle 13 is equal to the peripheral portion and the central portion of the substrate 14. In contrast, there are many in the central part and less in the peripheral part.
従って，フォトマスク等の基板の周辺部の現像スピー
ドが中心部に比して遅くなって，現像後のパターンは周
辺部と中心部とで寸法に差異が生じると同時に又周辺部
にはレジストの残渣が残るという問題を生ずる。Therefore, the development speed of the peripheral portion of the substrate such as the photomask is slower than that of the central portion, and the pattern after development has a difference in size between the peripheral portion and the central portion, and at the same time, the peripheral portion has a resist pattern. The problem of leaving a residue arises.
本発明は，フォトマスク等の基板のスプレー現像にお
いて，現像寸法の均一化と残渣の除去を目的として提供
されるものである。The present invention is provided for the purpose of uniformizing the development size and removing residues in spray development of a substrate such as a photomask.
第１図は本発明の原理説明図である。 FIG. 1 is an explanatory view of the principle of the present invention.
図において,1はスプレーノズル,2はスリット,3は基
板,4は噴射面である。In the figure, 1 is a spray nozzle, 2 is a slit, 3 is a substrate, and 4 is an ejection surface.
第１図（ｂ）に示すように，均等扇形のスプレーノズ
ル１には，先端にスリット２が設けられ，これより現像
液が扇形に噴射される。このスリット２が基板３の面に
平行な現状の位置では，中心部ｏからスプレーノズル先
端迄の距離l0と，周辺部ｒからスプレーノズル先端迄の
距離l2が等距離のため，現像液が噴射面各部の全体流量
が均等な噴射量で噴射されるため，周辺長の長い周辺部
は中心部に比べて相対的に単位面積当たりの現像液の流
量が少なくなり，周辺部の現像速度が遅くなる現象を生
じている他，流量不足によるレジスト残渣の発生が問題
であった。As shown in FIG. 1 (b), the uniform fan-shaped spray nozzle 1 is provided with a slit 2 at the tip thereof, and the developer is sprayed in a fan shape from this. At the present position where the slit 2 is parallel to the surface of the substrate 3, the distance l 0 from the central portion o to the spray nozzle tip and the distance l 2 from the peripheral portion r to the spray nozzle tip are equal to each other. Since the total flow rate of each part on the spray surface is uniform, the peripheral part with a longer peripheral length has a smaller flow rate of the developing solution per unit area than the central part, and the developing speed of the peripheral part is small. In addition to the phenomenon that the temperature is delayed, the generation of resist residue due to insufficient flow rate was a problem.
そのため，これを解決する方法として，本発明では，
第１図（ａ）に示すように，スプレーノズル１の基板３
の面に対する入射角度Θ１の大きくすると共に，スリッ
ト２のスプレーノズルの軸の回りの回転角度Θ２を調節
して，スリットの長片を基板３の面とに垂直とし，基板
周辺部からの距離l1を中心部からの距離l0より短くす
る。Therefore, as a method of solving this, in the present invention,
As shown in FIG. 1 (a), the substrate 3 of the spray nozzle 1
The incident angle Θ 1 with respect to the surface of the slit 2 is increased, and the rotation angle Θ 2 of the slit 2 around the axis of the spray nozzle is adjusted so that the long piece of the slit is perpendicular to the surface of the substrate 3 from the peripheral portion of the substrate. Make the distance l 1 shorter than the distance l 0 from the center.
このようにすれば，中心部より周辺部への噴射量が多
くなり，現像速度が均等且つレジストの残渣の発生しな
い現像方法が行える。This makes it possible to perform a developing method in which the injection amount from the central portion to the peripheral portion is large, the developing speed is uniform, and no resist residue is generated.
これとともに、スリットの現状を楔型にして、更に、
周辺部の流量を多くし、レジスト残渣を一層速やかに洗
い流すようにする。Along with this, the current state of the slit is made wedge-shaped,
Increase the flow rate in the peripheral area to wash off the resist residue more quickly.
上記のように，回転によって現像スピードの遅い周辺
部に多く現像液が当たるようにスプレーノズルのスリッ
トの基板面に対する位置（角度）を動かして，周辺部に
近くなるにつれて流量を多くし，現像スピードを中心部
と差がないようにし，且つ周辺部のレジスト残渣も流し
て除去することにより，寸法の不均一，残渣の処理が改
善できる。As described above, the position (angle) of the slit of the spray nozzle with respect to the substrate surface is moved so that the developing solution hits the peripheral part where the developing speed is slow by rotation, and the flow rate is increased toward the peripheral part to increase the developing speed. By eliminating the difference from the central part and flowing away the resist residue in the peripheral part, it is possible to improve the nonuniformity of the dimensions and the processing of the residue.
第２図は本発明の一実施例の説明図である。 FIG. 2 is an explanatory diagram of an embodiment of the present invention.
図において,5はスプレーノズル,6は基板,7は真空チャ
ック,8はカップ,9跳ね返り防止板,10は蓋,11はスリット
である。In the figure, 5 is a spray nozzle, 6 is a substrate, 7 is a vacuum chuck, 8 is a cup, 9 is a bounce prevention plate, 10 is a lid, and 11 is a slit.
第２図（ａ）は本発明のスプレー現像装置の断面図で
ある。FIG. 2 (a) is a sectional view of the spray developing apparatus of the present invention.
使用した装置では，スプレーノズル５が入射角度を大
きくとって側方にあり，流量の調節をスプレーノズル５
のスリット11の長片を基板６の面に垂直になるようにス
プレーノズルの軸の回りの回転角度を調節して行った。In the device used, the spray nozzle 5 is located on the side with a large angle of incidence, and the flow rate is controlled by the spray nozzle 5.
The rotation angle around the axis of the spray nozzle was adjusted so that the long piece of the slit 11 was perpendicular to the surface of the substrate 6.
基板に対する噴射面12の拡大図を第２図（ｂ）に示
す。An enlarged view of the ejection surface 12 with respect to the substrate is shown in FIG.
又，スプレーノズル５のスリット11の拡大図とその回
転角度を第２図（ｃ）に示す。Also, an enlarged view of the slit 11 of the spray nozzle 5 and its rotation angle are shown in FIG. 2 (c).
スリット11は垂直から水平まで，スプレーノズル５の
先端を回転することにより回転角度Θ２を調節出来る。The slit 11 can adjust the rotation angle Θ 2 by rotating the tip of the spray nozzle 5 from vertical to horizontal.
実施例では，搬送されたフォトマスク等の基板６が真
空チャック７に固定され200〜300rpmで回転する。In the embodiment, the conveyed substrate 6 such as a photomask is fixed to the vacuum chuck 7 and rotated at 200 to 300 rpm.
その後，窒素加圧（１〜2kg/cm2）によって，現像液
がスプレーノズル５のスリット11から噴射され，基板６
表面の噴射面12に当たる。Then, the developing solution is jetted from the slit 11 of the spray nozzle 5 by nitrogen pressure (1 to 2 kg / cm 2 ) and the substrate 6
It hits the jet surface 12 on the surface.
スプレーノズル５の先端より基板６の中心部ｏならび
に周辺部ｒへの距離は，スプレーノズル５の入射角度Θ
１を大きく採ることにより各部分の噴射量は均一に調整
できる。The distance from the tip of the spray nozzle 5 to the central portion o and the peripheral portion r of the substrate 6 is determined by the incident angle Θ of the spray nozzle 5.
By taking a large value of 1 , the injection amount of each part can be adjusted uniformly.
本願発明の楔型の形状のスリットを示す。これによ
り，スプレーノズルの入射角度との兼ね合いで，噴射面
各部の噴射量が自由に調節出来る範囲が拡がる。3 shows a wedge-shaped slit of the present invention. As a result, the range in which the injection amount of each part of the injection surface can be freely adjusted expands in consideration of the incident angle of the spray nozzle.
上記の方法により，現像後に基板周辺部に残るレジス
ト残渣を除去出来るとともに，フォトマスク等の基板面
内の寸法分布が均一化され，基板面内の寸法値のバラツ
キ（最大値−最小値）も0.1μｍから0.05μｍ程度に半
減した。By the above method, the resist residue remaining on the peripheral portion of the substrate after development can be removed, and the dimensional distribution within the substrate surface of the photomask or the like can be made uniform, and the dimensional variation within the substrate surface (maximum value-minimum value) It was halved from 0.1 μm to 0.05 μm.
第１図は本発明の原理説明図， 第２図は本発明の一実施例の説明図， 第３図は従来例の説明図 である。 図において， １はスプレーノズル,2はスリット， ３は基板,4は噴射面， ５はスプレーノズル,6は基板， ７は真空チャック,8はカップ， ９は跳ね返り防止板,10は蓋， 11はスリット,12は噴射面 である。 FIG. 1 is an explanatory view of the principle of the present invention, FIG. 2 is an explanatory view of an embodiment of the present invention, and FIG. 3 is an explanatory view of a conventional example. In the figure, 1 is a spray nozzle, 2 is a slit, 3 is a substrate, 4 is a spray surface, 5 is a spray nozzle, 6 is a substrate, 7 is a vacuum chuck, 8 is a cup, 9 is a bounce prevention plate, 10 is a lid, 11 Is a slit, and 12 is an ejection surface.
Claims (1)
ット（２）の形状を、鋭角部と対向する短辺を有する楔
型とし、 該基板（３）の周辺部から該スリット（２）の先端まで
の距離を、該基板（３）の中心部から該スリット（２）
の先端までの距離より短くして、 該スリットの前記鋭角部を該基板の中心部に対向させ、
該スリットの前記短辺を該基板の周辺部に対向させるよ
うに配置し、 該スプレーノズル（１）より該基板（３）上に現像液を
噴射することを特徴とするスプレー現像方法。1. A slit (2) provided at a tip of a spray nozzle (1) has a wedge shape having a short side facing an acute angle portion, and the slit (2) is provided from a peripheral portion of the substrate (3). The distance from the center of the substrate (3) to the slit (2)
Shorter than the distance to the tip of the slit, and the acute angle portion of the slit is opposed to the central portion of the substrate,
A spray developing method characterized in that the short side of the slit is arranged so as to face a peripheral portion of the substrate, and a developing solution is sprayed onto the substrate (3) from the spray nozzle (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1148907A JPH088207B2 (en) | 1989-06-12 | 1989-06-12 | Spray development method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1148907A JPH088207B2 (en) | 1989-06-12 | 1989-06-12 | Spray development method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0312918A JPH0312918A (en) | 1991-01-21 |
| JPH088207B2 true JPH088207B2 (en) | 1996-01-29 |
Family
ID=15463334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1148907A Expired - Lifetime JPH088207B2 (en) | 1989-06-12 | 1989-06-12 | Spray development method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088207B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3024319U (en) * | 1995-11-01 | 1996-05-21 | 敏夫 横木 | Soil pipe with water conduit and wart |
| KR19980025849A (en) * | 1996-10-05 | 1998-07-15 | 김영환 | Resist coating method for mask |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232417A (en) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | Semiconductor wafer resist developing apparatus |
| JPS60140669U (en) * | 1984-02-25 | 1985-09-18 | 本田技研工業株式会社 | Air nozzle for blowing away unnecessary mist droplets |
| JPH0532848Y2 (en) * | 1985-02-20 | 1993-08-23 |
-
1989
- 1989-06-12 JP JP1148907A patent/JPH088207B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0312918A (en) | 1991-01-21 |
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