JPH08264923A - Method and device from cleaning end face of substrate - Google Patents

Method and device from cleaning end face of substrate

Info

Publication number
JPH08264923A
JPH08264923A JP6842995A JP6842995A JPH08264923A JP H08264923 A JPH08264923 A JP H08264923A JP 6842995 A JP6842995 A JP 6842995A JP 6842995 A JP6842995 A JP 6842995A JP H08264923 A JPH08264923 A JP H08264923A
Authority
JP
Japan
Prior art keywords
substrate
resist
cleaning
face
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6842995A
Other languages
Japanese (ja)
Inventor
Kenichi Kashii
賢一 香椎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP6842995A priority Critical patent/JPH08264923A/en
Publication of JPH08264923A publication Critical patent/JPH08264923A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a device for cleaning end face of substrate which can prevent the rising of a resist at the time of cleaning the end face of a substrate coated with the resist with an organic solvent. CONSTITUTION: The recessed sections 15a and 16a of an end face cleaning nozzle 15 and resist drying nozzle 16 are engaged with to the peripheral section of the end section of a substrate 11. The nozzle 16 positioned on the downstream side of nozzle 15 in the moving direction of the nozzles 15 and 16 moves and blows a heated N2 gas upon the peripheral section of the end face of the substrate 11 from a gas blowing section provided in the recessed section 16a. As a result, a resist is hardened, because the solvent component contained in the resist is locally removed. The solvent component generated from the peripheral section of the end face of the substrate 11 is removed with a vacuum removing section additionally provided in the section 16a. As the nozzle 16 moves, the end face cleaning nozzle 15 also moves in the same direction and jets an organic solvent upon the hardened resist from the inside of the recessed section 15a to clean the peripheral section of the end face of the substrate 11. The excessive amounts of the dissolved resist and solvent are removed by a vacuum removing section in the section 15a.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、レジスト塗布後の基板
の端面洗浄に用いる基板端面洗浄方法およびその装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate end face cleaning method and apparatus used for cleaning the end face of a substrate after resist coating.

【0002】[0002]

【従来の技術】一般に、各種の基板の製造工程として、
基板の表面にパターンを形成するため、その表面にレジ
ストを塗布する工程があるが、レジストを塗布した場
合、その基板の端面周辺部を有機溶剤によって洗浄し、
この端面や周辺部に付着したレジストを除去する必要が
ある。
2. Description of the Related Art Generally, as a manufacturing process of various substrates,
In order to form a pattern on the surface of the substrate, there is a step of applying a resist to the surface, but when the resist is applied, the peripheral portion of the end face of the substrate is washed with an organic solvent,
It is necessary to remove the resist adhering to this end face and the peripheral portion.

【0003】従来、この種の基板の端面の基板端面洗浄
装置としては、図4に示す構成が知られている。この図
4において、11はレジスト塗布の行なわれた洗浄対象の
基板で、この基板11は図示しない搬送装置により基板洗
浄ステージ12上に載置され、真空吸着によりこの基板洗
浄ステージ12上に固定される。また、この基板洗浄ステ
ージ12は、基板11の面積より小さい支持面を有し、真空
吸着した基板11の周辺部下面が露出するように形成して
ある。また、この基板洗浄ステージ12は回転軸13に固定
されており、この回転軸13の回転により、上面に固定さ
れた基板11を、その平面方向に沿って任意の角度回動さ
せることができる。
Conventionally, a structure shown in FIG. 4 has been known as a substrate end face cleaning apparatus for the end face of a substrate of this type. In FIG. 4, reference numeral 11 denotes a substrate to be cleaned which has been coated with a resist. The substrate 11 is placed on a substrate cleaning stage 12 by a transfer device (not shown) and fixed on the substrate cleaning stage 12 by vacuum suction. It Further, the substrate cleaning stage 12 has a supporting surface smaller than the area of the substrate 11, and is formed so that the lower surface of the peripheral portion of the substrate 11 vacuum-adsorbed is exposed. The substrate cleaning stage 12 is fixed to a rotation shaft 13, and the rotation of the rotation shaft 13 allows the substrate 11 fixed to the upper surface to be rotated at an arbitrary angle along the plane direction.

【0004】さらに、15は端面洗浄ノズルで、この端面
洗浄ノズル15は断面U形の凹部15aを有し、この凹部15a
が基板洗浄ステージ12上に固定された基板11の端面周
辺部の互いに対向する2辺とそれぞれ係合するように配
置される。また、これら端面洗浄ノズル15は、矢印で示
すように、それぞれ対応する辺部に沿って移動できるよ
うに構成されている。
Further, 15 is an end face cleaning nozzle, and this end face cleaning nozzle 15 has a recess 15a having a U-shaped cross section, and this recess 15a
Are arranged so as to engage with two opposite sides of the peripheral portion of the end surface of the substrate 11 fixed on the substrate cleaning stage 12, respectively. Further, these end surface cleaning nozzles 15 are configured so as to be able to move along corresponding side portions, as indicated by arrows.

【0005】これら端面洗浄ノズル15は、凹部15a 内に
基板11の端面周辺部に向かって有機溶剤、たとえばMI
BK溶剤やECA溶剤などを吐出するための図示しない
溶剤吐出部を設けている。また、この凹部15a 内には、
余剰な洗浄液や溶解したレジストなどを吸引除去するた
め図示しないバキューム除去部が付設されている。
These end surface cleaning nozzles 15 are arranged in the recess 15a toward the peripheral portion of the end surface of the substrate 11 with an organic solvent such as MI.
A solvent ejection unit (not shown) for ejecting a BK solvent, an ECA solvent, or the like is provided. Further, in the recess 15a,
A vacuum removing unit (not shown) is additionally provided for sucking and removing the excess cleaning liquid and the dissolved resist.

【0006】そして、レジストが塗布された基板11を洗
浄する場合は、まず、洗浄対象の基板11を図示しない搬
送装置により基板洗浄ステージ12上に載置し、この基板
11を真空吸着により固定する。また、端面洗浄ノズル15
の凹部15a を基板11の端面周辺部に係合させる。この状
態で、凹部15a 内に設けた溶剤吐出部から有機溶剤を対
応する端面周辺部に吐出させながら、この端面洗浄ノズ
ル15を矢印で示すように対応する辺部に沿って移動させ
ることにより、基板11の端面周辺部を洗浄する。この洗
浄時に、溶解した余剰なレジストや洗浄液などは、凹部
15a 内に付設されたバキューム除去部により吸引除去す
る。
When cleaning the substrate 11 coated with the resist, first, the substrate 11 to be cleaned is placed on the substrate cleaning stage 12 by a transfer device (not shown), and the substrate is cleaned.
Fix 11 by vacuum adsorption. In addition, the end face cleaning nozzle 15
The recess 15a is engaged with the peripheral portion of the end surface of the substrate 11. In this state, while discharging the organic solvent from the solvent discharge portion provided in the recess 15a to the peripheral portion of the corresponding end surface, by moving the end surface cleaning nozzle 15 along the corresponding side portion as shown by the arrow, The periphery of the end surface of the substrate 11 is washed. During this cleaning, excess resist and cleaning solution that are
Vacuum removal is performed by the vacuum removal unit attached inside 15a.

【0007】このように、基板11の2辺について端面洗
浄を行ない、所定時間の経過により洗浄が終了したら、
回転軸13により基板11を90°回動させ、残りの2辺に
端面洗浄ノズル15の凹部15a を係合させ、上述した一連
の洗浄動作を繰り返す。
As described above, the end faces of the two sides of the substrate 11 are cleaned, and when the cleaning is completed after a predetermined time elapses,
The substrate 11 is rotated 90 ° by the rotating shaft 13, the recesses 15a of the end face cleaning nozzle 15 are engaged with the remaining two sides, and the series of cleaning operations described above are repeated.

【0008】しかしながら、基板11の端面洗浄を行なう
と、図5から明らかなように、基板11の表面に塗布され
たレジスト膜11A のうち、基板11の端面および領域Aで
示す周辺部の余剰なレジストを除去できるが、レジスト
膜11A とガラス面11B との境界面に図示のようなレジス
トの盛上がりが生じる。すなわち、領域Bで示す通常の
レジスト膜11A の膜厚に比べ、領域Cで示す境界面部分
に盛上がりが発生する。
However, when the end surface of the substrate 11 is cleaned, as is apparent from FIG. 5, of the resist film 11A applied to the surface of the substrate 11, the surplus of the end surface of the substrate 11 and the peripheral portion indicated by the area A is left. Although the resist can be removed, the resist rises as shown in the figure at the boundary between the resist film 11A and the glass surface 11B. That is, as compared with the normal film thickness of the resist film 11A shown in the region B, the bulge occurs in the boundary surface portion shown in the region C.

【0009】この盛上がりは、有機溶剤によるレジスト
の溶解速度が早いため、溶解したレジストが領域Cで示
す境界面部に集積するためである。
This rise is due to the fact that the dissolution rate of the resist in the organic solvent is high, so that the dissolved resist accumulates on the boundary portion indicated by the region C.

【0010】このような盛上がりが生じると、領域Bで
示す基板11の中央部のレジスト膜厚に比べ、領域Cで示
す洗浄後の境界面の膜厚が厚いめ、露光および現像処理
後におけるレジスト膜残りが発生する。このため、レジ
スト剥がれによる発塵に基因する歩留まりの低下が生
じ、レジスト膜残り除去作業の工程追加が必要となる。
When such a bulge occurs, the thickness of the boundary surface after cleaning shown in region C becomes thicker than the resist film thickness in the central portion of the substrate 11 shown in region B, and the resist after exposure and development processing is increased. A film residue occurs. For this reason, the yield is reduced due to dust generation due to the resist peeling, and it is necessary to add a step for removing the residual resist film.

【0011】[0011]

【発明が解決しようとする課題】上述のように、レジス
ト塗布された基板の端面を有機溶剤により洗浄すると、
レジスト膜とレジストが除去された基板面との境界面に
盛上がりが生じ、歩留まりの低下や工程追加などの要因
となっている。
As described above, when the edge surface of the resist-coated substrate is washed with an organic solvent,
The interface between the resist film and the surface of the substrate from which the resist has been removed is raised, which is a factor of lowering the yield and adding processes.

【0012】本発明は、上記問題点に鑑みなされたもの
で、レジストを塗布した基板の端面を有機溶剤により洗
浄する際に、レジストの盛上がりを生じることのない基
板端面洗浄方法およびその装置を提供することを目的と
する。
The present invention has been made in view of the above problems, and provides a method and apparatus for cleaning a substrate end surface that does not cause swelling of the resist when cleaning the end surface of a resist-coated substrate with an organic solvent. The purpose is to do.

【0013】[0013]

【課題を解決するための手段】請求項1記載の基板端面
洗浄方法は、レジストが塗布された基板の端面周辺部を
有機溶剤で洗浄する基板端面洗浄方法において、洗浄対
象となる基板の端面周辺部に加熱されたガス体をあらか
じめ吹き付けてこの端面周辺部のレジストを硬化させ、
このレジストを硬化させた後、有機溶剤により洗浄する
ものである。
According to a first aspect of the present invention, there is provided a substrate edge cleaning method for cleaning a peripheral portion of an edge of a substrate coated with a resist with an organic solvent. The heated gas body is sprayed in advance to cure the resist in the peripheral area of this end face,
After the resist is cured, it is washed with an organic solvent.

【0014】請求項2記載の基板端面洗浄装置は、レジ
ストが塗布された基板の端面周辺部を有機溶剤で洗浄す
る基板端面洗浄装置において、有機溶剤で洗浄する洗浄
ノズルと、前記基板に対して前記洗浄ノズルより相対的
に先方側に位置し、前記基板の洗浄対象部分の端面周辺
部のレジストに対して加熱されたガス体を吹き付けるガ
ス吹出ノズルとを具備したものである。
According to a second aspect of the present invention, there is provided a substrate end surface cleaning apparatus for cleaning a peripheral portion of an end surface of a substrate coated with a resist with an organic solvent. And a gas blowing nozzle which is located relatively far from the cleaning nozzle and blows a heated gas body onto the resist in the peripheral portion of the end surface of the portion to be cleaned of the substrate.

【0015】[0015]

【作用】請求項1記載の基板端面洗浄方法は、有機溶剤
で洗浄除去される部分に、加熱されたガス体をあらかじ
め吹き付けてこの部分のレジストを硬化させることによ
り、この部分の有機溶剤による溶解速度を低下させ、レ
ジスト溶解後に発生する溶解部のレジストの境界面への
集積作用を低減させ、レジストの盛上がりを防止して形
状を均一にする。
According to the method of cleaning the end face of the substrate of the present invention, a heated gas body is previously sprayed on the portion to be cleaned and removed by the organic solvent to cure the resist in this portion, thereby dissolving the portion in the organic solvent. The speed is reduced, the accumulation action of the dissolved portion on the boundary surface of the resist generated after the resist is dissolved, the rise of the resist is prevented, and the shape is made uniform.

【0016】請求項2記載の基板端面洗浄装置は、加熱
されたガス体を吹出ノズルから吹き出し、その後洗浄ノ
ズルで有機溶剤によって洗浄するため、レジストを予め
硬化させることができ、境界面でのレジストの盛上がり
を防止する。
In the substrate end face cleaning apparatus according to the second aspect, the heated gas body is blown out from the blowing nozzle and then washed with the organic solvent in the washing nozzle, so that the resist can be pre-cured and the resist at the boundary surface can be cured. To prevent the rise of.

【0017】[0017]

【実施例】以下、本発明の基板端面洗浄装置の一実施例
を図面を参照して説明する。なお、従来例に対応する部
分には、同一符号を付して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the substrate end face cleaning apparatus of the present invention will be described below with reference to the drawings. The parts corresponding to the conventional example will be described with the same reference numerals.

【0018】図1は、液晶表示機器用ガラス基板へのレ
ジスト塗布後の基板端面洗浄や、半導体素子に用いるシ
リコンウエハへのレジスト塗布後の基板端面洗浄などに
適用される基板端面洗浄装置を示す斜視図であり、レジ
スト塗布の行なわれた洗浄対象の基板11は図示しない搬
送装置により基板洗浄ステージ12上に載置され、真空吸
着によりこの基板洗浄ステージ12上に固定される。ま
た、この基板洗浄ステージ12は、基板11の面積より小さ
い支持面を有し、真空吸着した基板11の周辺部下面が露
出するように形成してある。また、この基板洗浄ステー
ジ12は回転軸13に固定されており、この回転軸13の回転
により、上面に固定された基板11を、その平面方向に沿
って任意の角度回動させることができる。
FIG. 1 shows a substrate end face cleaning apparatus which is applied to substrate end face cleaning after resist coating on a glass substrate for liquid crystal display devices and substrate end face cleaning after resist coating on a silicon wafer used for a semiconductor element. It is a perspective view, and the substrate 11 to be cleaned on which the resist coating has been performed is placed on the substrate cleaning stage 12 by a transfer device (not shown), and is fixed on the substrate cleaning stage 12 by vacuum suction. Further, the substrate cleaning stage 12 has a supporting surface smaller than the area of the substrate 11, and is formed so that the lower surface of the peripheral portion of the substrate 11 vacuum-adsorbed is exposed. The substrate cleaning stage 12 is fixed to a rotation shaft 13, and the rotation of the rotation shaft 13 allows the substrate 11 fixed to the upper surface to be rotated at an arbitrary angle along the plane direction.

【0019】さらに、15は端面洗浄ノズルで、この端面
洗浄ノズル15は断面U形の凹部15aを有し、この凹部15a
が基板洗浄ステージ12上に固定された基板11の端面周
辺部の互いに対向する2辺とそれぞれ係合するように配
置される。また、これら端面洗浄ノズル15は、矢印で示
すように、それぞれ対応する辺部に沿って移動できるよ
うに構成されている。
Further, 15 is an end face cleaning nozzle, and this end face cleaning nozzle 15 has a recess 15a having a U-shaped cross section, and this recess 15a
Are arranged so as to engage with two opposite sides of the peripheral portion of the end surface of the substrate 11 fixed on the substrate cleaning stage 12, respectively. Further, these end surface cleaning nozzles 15 are configured so as to be able to move along corresponding side portions, as indicated by arrows.

【0020】これら端面洗浄ノズル15は、凹部15a 内に
基板11の端面周辺部に向かって有機溶剤、たとえばMI
BK溶剤やECA溶剤などを吐出するための図示しない
溶剤吐出部を設けている。また、この凹部15a 内には、
余剰な洗浄液や溶解したレジストなどを吸引除去するた
め図示しないバキューム除去部が付設されている。
These end surface cleaning nozzles 15 have an organic solvent such as MI in the recess 15a toward the peripheral portion of the end surface of the substrate 11.
A solvent ejection unit (not shown) for ejecting a BK solvent, an ECA solvent, or the like is provided. Further, in the recess 15a,
A vacuum removing unit (not shown) is additionally provided for sucking and removing the excess cleaning liquid and the dissolved resist.

【0021】また、16はガス吹出ノズルとしてのレジス
ト乾燥ノズルで、このレジスト乾燥ノズル16は、端面洗
浄ノズル15と同様に断面U形の凹部16a を有しており、
端面洗浄ノズル15とともに並置される、すなわち、凹部
16a が基板洗浄ステージ12上に固定された基板11の端面
周辺部の互いに対向する2辺とそれぞれ係合するように
配置されており、かつ、矢印で示すように、それぞれ対
応する辺部に沿って移動できるように構成されている。
なお、矢印で示す移動方向に対してレジスト乾燥ノズル
16の方が端面洗浄ノズル15より先方に位置している。
Further, 16 is a resist drying nozzle as a gas blowing nozzle, and this resist drying nozzle 16 has a recess 16a having a U-shaped cross section like the end surface cleaning nozzle 15,
Side by side with the end face cleaning nozzle 15, that is, the recess
16a are arranged so as to respectively engage with two opposite sides of the peripheral portion of the end surface of the substrate 11 fixed on the substrate cleaning stage 12, and along the corresponding side portions as indicated by arrows. It is configured so that it can be moved.
It should be noted that the resist drying nozzle is in the moving direction indicated by the arrow.
16 is located ahead of the edge cleaning nozzle 15.

【0022】さらに、これらレジスト乾燥ノズル16の凹
部16a 内には、図示していないが、基板11の端面に向か
って加熱されたガス体、たとえばN2 を吐出するガス体
吐出部と、加熱されたガス体の吹き付けによりレジスト
から生じる溶剤成分を吸引除去するバキューム除去部と
がそれぞれ設けられている。
Further, although not shown in the drawing, the recess 16a of the resist drying nozzle 16 has a gas body heated toward the end face of the substrate 11, for example, a gas body discharge section for discharging N 2 and a heated gas body discharge section. And a vacuum removing unit for sucking and removing the solvent component generated from the resist by spraying the gas body.

【0023】次に、上記実施例の動作について説明す
る。
Next, the operation of the above embodiment will be described.

【0024】レジストが塗布された基板11を洗浄する場
合は、まず、洗浄対象の基板11を図示しない搬送装置に
より基板洗浄ステージ12上に載置し、かつ、真空吸着に
より固定する。そして、端面洗浄ノズル15の凹部15a お
よびレジスト乾燥ノズル16の凹部16a を基板11の端面周
辺部に係合させる。
When cleaning the substrate 11 coated with the resist, first, the substrate 11 to be cleaned is placed on the substrate cleaning stage 12 by a transfer device (not shown) and fixed by vacuum suction. Then, the recess 15a of the end surface cleaning nozzle 15 and the recess 16a of the resist drying nozzle 16 are engaged with the peripheral portion of the end surface of the substrate 11.

【0025】この状態で、まず、移動方向の前方に位置
するレジスト乾燥ノズル16は、その凹部16a 内に設けた
ガス体吐出部から、基板11の端面周辺部に向かって加熱
されたN2 などのガス体を吐出しながら矢印の方向に移
動する。そして、このレジスト乾燥ノズル16の走査によ
り、基板11の端面周辺部のレジスト、すなわち、洗浄対
象部分のレジストに加熱されたN2 ガスを均一に吹き付
けられる。このため、この部分のレジストは局所的に溶
剤成分が除去され硬化する。このとき、レジストから除
去され、基板11の端面周辺部に発生した溶剤成分は、凹
部16a 内に付設されたバキューム除去部により吸引除去
される。
[0025] In this state, first, resist drying nozzle 16 located in front of the direction of movement thereof from the gas-dispensing unit which is provided in the recess 16a, such as N 2, which are heated toward the end face periphery of the substrate 11 It moves in the direction of the arrow while discharging the gas body. By the scanning of the resist drying nozzle 16, the heated N 2 gas is uniformly sprayed on the resist on the peripheral portion of the end surface of the substrate 11, that is, the resist on the portion to be cleaned. For this reason, the solvent component is locally removed from the resist in this portion and the resist is cured. At this time, the solvent component removed from the resist and generated in the peripheral portion of the end surface of the substrate 11 is sucked and removed by the vacuum removing unit provided in the recess 16a.

【0026】また、レジスト乾燥ノズル16の走査に伴
い、端面洗浄ノズル15も同方向へ移動し、走査を開始す
る。すなわち、レジスト乾燥ノズル16の走査により硬化
した端面周辺部のレジストに対し、凹部15a 内に設けた
溶剤吐出部から有機溶剤を吐出しながら、矢印で示すよ
うに対応する辺部に沿って移動し、基板11の端面周辺部
を洗浄する。この洗浄時に、溶解した余剰なレジストや
洗浄液などは、凹部15a内に付設されたバキューム除去
部により吸引除去する。
Further, with the scanning of the resist drying nozzle 16, the end surface cleaning nozzle 15 also moves in the same direction and starts scanning. That is, while the organic solvent is being ejected from the solvent ejecting portion provided in the concave portion 15a to the resist on the peripheral portion of the end surface which is cured by the scanning of the resist drying nozzle 16, the resist is moved along the corresponding side portion as shown by the arrow. The peripheral portion of the end surface of the substrate 11 is cleaned. During this cleaning, the dissolved excess resist, cleaning solution, etc. are sucked and removed by the vacuum removing section additionally provided in the recess 15a.

【0027】このようにして、基板11の2辺について端
面洗浄が終了したなら、回転軸13により基板11を90°
回動させ、残りの2辺に端面洗浄ノズル15の凹部15a お
よびレジスト乾燥ノズル16の凹部16a をそれぞれ係合さ
せ、一連の洗浄動作を繰り返す。
When the end face cleaning on the two sides of the substrate 11 is completed in this way, the substrate 11 is rotated 90 ° by the rotating shaft 13.
It is rotated to engage the recess 15a of the end face cleaning nozzle 15 and the recess 16a of the resist drying nozzle 16 with the remaining two sides, and a series of cleaning operations are repeated.

【0028】ここで、洗浄時に、有機溶剤が吹き付けら
れる基板11の端面周辺部のレジスト部分は、前段におけ
る加熱されたガス体の吹き付けにより硬化しており、有
機溶剤による溶解速度が低下している。このため、レジ
ストの溶解後に発生する溶解部のレジスト境界面への集
積作用が低減し、図5で示した従来例のように、領域B
で示す通常のレジスト膜11A の膜厚に比べ、領域Cで示
す境界面部分が大幅に盛上がるようなことはない。
Here, at the time of cleaning, the resist portion around the end surface of the substrate 11 to which the organic solvent is sprayed is hardened by spraying the heated gas body in the previous stage, and the dissolution rate by the organic solvent is reduced. . For this reason, the accumulation action of the dissolved portion on the resist boundary surface, which occurs after the resist is dissolved, is reduced, and as in the conventional example shown in FIG.
Compared with the normal film thickness of the resist film 11A, the boundary portion shown by the region C does not rise significantly.

【0029】また、図2から明らかなように、基板11を
端面洗浄すると、基板11の表面に塗布されたレジスト膜
11A のうち、基板11の端面および領域Aで示す周辺部の
余剰なレジストを除去することができる。また、図示の
ように、レジスト膜11A とガラス面11B との境界面にお
けるレジストの盛上がりは殆ど生じず、領域Bで示す通
常のレジスト膜11A の膜厚は、前述した境界面部分にお
いても殆ど盛上がらず、周辺部においても平坦なレジス
ト膜11A が得られる。
As is apparent from FIG. 2, when the end face of the substrate 11 is washed, the resist film applied on the surface of the substrate 11
Of 11A, the surplus resist in the end face of the substrate 11 and the peripheral portion shown by the region A can be removed. Further, as shown in the figure, resist swelling hardly occurs at the boundary surface between the resist film 11A and the glass surface 11B, and the film thickness of the normal resist film 11A shown in the region B is almost even at the boundary surface portion described above. A resist film 11A that does not rise and is flat even in the peripheral portion can be obtained.

【0030】このため、露光、現像処理後におけるレジ
スト膜残りのような不具合が発生せず、したがって、レ
ジスト剥がれによる発塵に起因する歩留まりの低下を防
止できるとともに、レジスト膜残り除去作業などの工程
追加を要しない。
Therefore, problems such as the resist film remaining after the exposure and development processes do not occur, and therefore, the yield decrease due to dust generation due to the resist peeling can be prevented, and the resist film residue removing process and the like can be performed. No need to add.

【0031】[0031]

【発明の効果】請求項1記載の基板端面洗浄方法によれ
ば、有機溶剤で洗浄除去される部分に、加熱されたガス
体をあらかじめ吹き付けてこの部分のレジストを硬化さ
せることにより、この部分の有機溶剤による溶解速度を
低下させ、レジスト溶解後に発生する溶解部のレジスト
の境界面への集積作用を低減させ、レジストの盛上がり
を防止して形状を均一にし、平坦なレジスト膜を得るこ
とができるので、露光、現像後におけるレジスト膜残り
を無くすことができる。
According to the substrate end face cleaning method of the first aspect of the present invention, a heated gas body is previously sprayed on the portion to be cleaned and removed by the organic solvent to cure the resist in this portion. It is possible to obtain a flat resist film by reducing the dissolution rate by an organic solvent, reducing the accumulation action on the boundary surface of the resist of the dissolution part generated after resist dissolution, preventing the resist from rising and making the shape uniform. Therefore, the resist film remaining after exposure and development can be eliminated.

【0032】請求項2記載の基板端面洗浄装置によれ
ば、加熱されたガス体を吹出ノズルから吹き出し、その
後洗浄ノズルで有機溶剤によって洗浄するため、レジス
トを予め硬化させることができ、境界面でのレジストの
盛上がりを防止し、平坦なレジスト膜を得ることができ
るので、露光、現像後におけるレジスト膜残りを無くす
ことができる。
According to the substrate end surface cleaning apparatus of the second aspect, since the heated gas body is blown out from the blowing nozzle and then washed by the organic solvent in the cleaning nozzle, the resist can be pre-cured and the boundary surface Since the resist can be prevented from rising and a flat resist film can be obtained, the resist film remaining after exposure and development can be eliminated.

【0033】[0033]

【図面の簡単な説明】[Brief description of drawings]

【0034】[0034]

【図1】本発明の基板端面洗浄装置の一実施例を示す斜
視図である。
FIG. 1 is a perspective view showing an embodiment of a substrate end surface cleaning apparatus of the present invention.

【0035】[0035]

【図2】同上実施例により洗浄した基板の端面周辺部を
示す図である。
FIG. 2 is a view showing a peripheral portion of an end surface of a substrate cleaned according to the above-mentioned embodiment.

【0036】[0036]

【図3】洗浄対象の基板を示す斜視図である。FIG. 3 is a perspective view showing a substrate to be cleaned.

【0037】[0037]

【図4】従来例の基板端面洗浄装置を示す斜視図であ
る。
FIG. 4 is a perspective view showing a conventional substrate end surface cleaning apparatus.

【0038】[0038]

【図5】同上従来例の洗浄結果を示す図である。FIG. 5 is a diagram showing a cleaning result of the conventional example.

【0039】[0039]

【符号の説明】[Explanation of symbols]

11 基板 15 端面洗浄ノズル 16 ガス吹出ノズルとしてのレジスト乾燥ノズル 11 substrate 15 edge cleaning nozzle 16 resist drying nozzle as gas blowing nozzle

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 レジストが塗布された基板の端面周辺部
を有機溶剤で洗浄する基板端面洗浄方法において、 洗浄対象となる基板の端面周辺部に加熱されたガス体を
あらかじめ吹き付けてこの端面周辺部のレジストを硬化
させ、 このレジストを硬化させた後、有機溶剤により洗浄する
ことを特徴とする基板端面洗浄方法。
1. A substrate edge cleaning method for cleaning an edge of a substrate coated with a resist with an organic solvent, wherein a heated gas body is sprayed in advance on the edge of the edge of the substrate to be cleaned. A method for cleaning an end face of a substrate, characterized in that the resist is cured, the resist is cured, and then cleaned with an organic solvent.
【請求項2】 レジストが塗布された基板の端面周辺部
を有機溶剤で洗浄する基板端面洗浄装置において、 有機溶剤で洗浄する洗浄ノズルと、 前記基板に対して前記洗浄ノズルより相対的に先方側に
位置し、前記基板の洗浄対象部分の端面周辺部のレジス
トに対して加熱されたガス体を吹き付けるガス吹出ノズ
ルとを具備したことを特徴とする基板端面洗浄装置。
2. A substrate end face cleaning device for cleaning the peripheral portion of the end face of a substrate coated with a resist with an organic solvent, a cleaning nozzle for cleaning with an organic solvent, and a side relatively ahead of the cleaning nozzle with respect to the substrate. And a gas blowing nozzle that blows a heated gas body onto the resist in the peripheral portion of the end surface of the portion to be cleaned of the substrate, the substrate end surface cleaning apparatus.
JP6842995A 1995-03-27 1995-03-27 Method and device from cleaning end face of substrate Pending JPH08264923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842995A JPH08264923A (en) 1995-03-27 1995-03-27 Method and device from cleaning end face of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842995A JPH08264923A (en) 1995-03-27 1995-03-27 Method and device from cleaning end face of substrate

Publications (1)

Publication Number Publication Date
JPH08264923A true JPH08264923A (en) 1996-10-11

Family

ID=13373453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842995A Pending JPH08264923A (en) 1995-03-27 1995-03-27 Method and device from cleaning end face of substrate

Country Status (1)

Country Link
JP (1) JPH08264923A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100466295B1 (en) * 2002-05-20 2005-01-13 한국디엔에스 주식회사 Method for etching an edge face of a substrate
US7282098B2 (en) 2002-03-15 2007-10-16 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7412983B2 (en) 2002-03-22 2008-08-19 Seiko Epson Corporation Pattern forming method and apparatus, and device fabrication method and device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282098B2 (en) 2002-03-15 2007-10-16 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7695570B2 (en) 2002-03-15 2010-04-13 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7412983B2 (en) 2002-03-22 2008-08-19 Seiko Epson Corporation Pattern forming method and apparatus, and device fabrication method and device
KR100466295B1 (en) * 2002-05-20 2005-01-13 한국디엔에스 주식회사 Method for etching an edge face of a substrate

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