JPS5972725A - Application of resist - Google Patents
Application of resistInfo
- Publication number
- JPS5972725A JPS5972725A JP18286382A JP18286382A JPS5972725A JP S5972725 A JPS5972725 A JP S5972725A JP 18286382 A JP18286382 A JP 18286382A JP 18286382 A JP18286382 A JP 18286382A JP S5972725 A JPS5972725 A JP S5972725A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- treated
- lower side
- holding base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims description 10
- 230000005484 gravity Effects 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の属する技術分野〕 本発明はレジストの塗布方法に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a resist coating method.
半導体装置の集積度の増加に伴い、微細なパターンの形
成技術が重要になっている。特に、半導体装置の製造の
際に生じる、基板上の段差は、微細なパターンの形成に
悪影響を及はす。このため、最近多層レジストを用いて
この段差によるパターンの寸法精度劣化を、改善する方
策が使われるようになった。この方法では、まず段差を
埋めるに充分な厚さのレジストを塗布し、平坦化したレ
ジスト面を形成する必要がある。第１図に示す従来のレ
ジスト塗布方法では、被処理基板１上にレジスト２をノ
ズル４から重力方向８に滴下して後、保持台３を高速で
回転して、乾燥させるのが一般的である。この方法の場
合、第２図に示す被処理基板１上に前工程で予め形成さ
れた段差５（例えばシリコン酸化膜他）により、塗布し
たレジスト膜が完全には平坦化されず、レジストの小さ
な段差が残る。１〜２μｍあるいは、サブミクロンのパ
ターンを形成する場合には、この程度の段差でも多層レ
ジストによるパターン形成に悪影響を及はすことか判っ
た。2. Description of the Related Art As the degree of integration of semiconductor devices increases, techniques for forming fine patterns have become important. In particular, steps on a substrate that occur during the manufacture of semiconductor devices have a negative effect on the formation of fine patterns. For this reason, measures have recently been taken to improve the deterioration in pattern dimensional accuracy due to this step difference by using a multilayer resist. In this method, it is first necessary to apply a resist thick enough to fill in the steps and form a flattened resist surface. In the conventional resist coating method shown in FIG. 1, the resist 2 is generally dropped onto the substrate 1 to be processed in the direction of gravity 8 from the nozzle 4, and then the holding table 3 is rotated at high speed to dry it. be. In the case of this method, the applied resist film is not completely flattened due to the step 5 (for example, silicon oxide film, etc.) previously formed on the substrate 1 to be processed in the previous process as shown in FIG. A step remains. It has been found that when forming a pattern of 1 to 2 .mu.m or submicron, even a level difference of this level has an adverse effect on pattern formation using a multilayer resist.
本発明の目的は、上記問題点を解消して、多層レジスト
に適したレジスト平坦面を容易に形成するレジスト塗布
方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a resist coating method that solves the above problems and easily forms a flat resist surface suitable for a multilayer resist.
本発明のレジスト塗布方法の特徴は、レジスト膜を形成
すべき被処理面を下方に向けて被処理基板を保持し、レ
ジスト液を下方より、前記処理面に向けて吹きつけ、前
記保持台を回転することにある。このような本発明を実
施するレジスト塗布装置は、被処理基板を吸着する回転
保持台は、吸着面を下方に向けて配設され、且つレジス
ト液を吹キ出すノズルは、レジスト液を前記吸着面に向
けて、吹き上げるよう配設されている。The resist coating method of the present invention is characterized by holding a substrate to be processed with the surface to be processed on which a resist film is to be formed facing downward, spraying a resist solution from below toward the processing surface, and holding the substrate on the holding table. It's about rotating. In the resist coating apparatus according to the present invention, the rotary holding table for sucking the substrate to be processed is arranged with the suction surface facing downward, and the nozzle for blowing out the resist liquid is arranged to suck the resist liquid onto the suction surface. It is arranged so that it blows up towards the surface.
以下本発明に係るレジスト塗布方法の一実施例と、その
方法を実施するためのレジスト塗布装置の一例を図面を
用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a resist coating method according to the present invention and an example of a resist coating apparatus for carrying out the method will be described below with reference to the drawings.
第３図には、本発明に適合する装置の一例が示されてお
り、１は被処理基板、２はレジスト膜、３は真空吸着機
構を有する回転保持台、６．６’はレジスト液を噴出す
るノズルである。FIG. 3 shows an example of an apparatus adapted to the present invention, in which 1 is a substrate to be processed, 2 is a resist film, 3 is a rotary holding table having a vacuum suction mechanism, and 6.6' is for holding a resist liquid. It is a nozzle that ejects water.
同図に示すごとく、被処理面を下方８に向けて被処理基
板１を回転保持台３に吸着せしめ、ノズル６．６′から
レジスト液２を噴射して下方から被処理基板１に吹きつ
ける。噴射終了と同時に回転保持台３を高速で回転して
、レジストを乾燥させる○このようにすることにより、
塗布すべきレジス、ト２は被処理面上で、重力と遠心力
により平坦面を形成し、その状態で乾燥される。As shown in the figure, the substrate 1 to be processed is attracted to the rotating holding table 3 with the surface to be processed facing downward 8, and the resist liquid 2 is sprayed from the nozzle 6.6' onto the substrate 1 from below. . At the same time as the injection ends, the rotary holding table 3 is rotated at high speed to dry the resist. By doing this,
The resist to be applied forms a flat surface on the surface to be processed by gravity and centrifugal force, and is dried in this state.
゛ 上述のごとくレジスト塗布した例を第４図に示す。FIG. 4 shows an example of resist coating as described above.
段差５を埋めるに充分なレジストの厚さで、且つ平坦な
レジスト面が形成される。このレジストを最下層として
多層レジストを形成することにより、段差上でも非常に
良好な寸法精度の微細パターンが形成できた。The resist is thick enough to fill the step 5 and a flat resist surface is formed. By forming a multilayer resist using this resist as the bottom layer, a fine pattern with very good dimensional accuracy could be formed even on steps.
上記実施例においてノスル６．６′は複数個配設したが
、レジスト膜厚の面内均一性に支障のない場合には、１
個に簡略化することが可能である。In the above embodiment, a plurality of nostles 6.6' were provided, but if there is no problem with the in-plane uniformity of the resist film thickness, one nostle 6.6' may be used.
It is possible to simplify it to
又、上記実施例では、回転保持台を１個のみ用いて説明
したが、複数個設けても良いことは、勿論である。Furthermore, although the above embodiment has been described using only one rotary holding table, it goes without saying that a plurality of rotary holding tables may be provided.
以上説明したごとく、本発明に依れば、段差を有する被
処理系機上に、容易に平坦なレジスト面を形成すること
が、可能となり、殊に多層レジストを利用した微細パタ
ーンの形成の際に、高精度のパターン形成が可能となる
。As explained above, according to the present invention, it is possible to easily form a flat resist surface on a processing machine having steps, and especially when forming a fine pattern using a multilayer resist. In addition, highly accurate pattern formation becomes possible.
第１図は従来のレジスト塗布方法を示す説明図、第２図
は従来方法による段差上のレジスト面を示す断面図、第
３図は、本発明の一実施例を示す説明図、第４図は、本
発明の方法により形成した段差上のレジスト平坦面を示
す断面図である。
１・・・被処理基板、 ２・・・レジスト、３・
・・回転保持台、 ４・・・レジスト滴下ノズ
ル、５・・・被処理基板上の段差、６．６・・・レジス
ト噴射ノズル。
（７３１７）代理人 弁理士 則近憲佑（ほか１名）第
１１！！ 第 ２ 図第
３ 図FIG. 1 is an explanatory diagram showing a conventional resist coating method, FIG. 2 is a sectional view showing a resist surface on a step by a conventional method, FIG. 3 is an explanatory diagram showing an embodiment of the present invention, and FIG. 1 is a cross-sectional view showing a resist flat surface on a step formed by the method of the present invention. 1... Substrate to be processed, 2... Resist, 3...
...Rotating holding table, 4.Resist dropping nozzle, 5.Level on substrate to be processed, 6.6.Resist injection nozzle. (7317) Agent Patent Attorney Kensuke Norichika (and 1 other person) No. 11! ! Figure 2
3 diagram
Claims (1)
て、被処理基板を保持し、レジスト液を下方より前記処
理面に向けて吹きつけ、前記被処理基板を回転すること
を特徴とするレジスト塗布方法０A resist coating process characterized in that, in the step of applying a resist to the processing surface of the processing substrate, the processing processing substrate is held, a resist liquid is sprayed from below toward the processing surface, and the processing processing substrate is rotated. Method 0
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18286382A JPS5972725A (en) | 1982-10-20 | 1982-10-20 | Application of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18286382A JPS5972725A (en) | 1982-10-20 | 1982-10-20 | Application of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5972725A true JPS5972725A (en) | 1984-04-24 |
Family
ID=16125757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18286382A Pending JPS5972725A (en) | 1982-10-20 | 1982-10-20 | Application of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5972725A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04504377A (en) * | 1989-04-05 | 1992-08-06 | オー・シー・ジー・マイクロエレクトロニツク・マテリアルズ・インコーポレイテツド | Method of coating a photoresist composition onto a substrate |
| JPH09173957A (en) * | 1995-12-26 | 1997-07-08 | Nec Corp | Method for flattening substrate surface |
| JP2013138972A (en) * | 2011-12-28 | 2013-07-18 | Leap Co Ltd | Spray coater |
| JP2018118197A (en) * | 2017-01-24 | 2018-08-02 | 株式会社テックインテック | Coating liquid coating method |
-
1982
- 1982-10-20 JP JP18286382A patent/JPS5972725A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04504377A (en) * | 1989-04-05 | 1992-08-06 | オー・シー・ジー・マイクロエレクトロニツク・マテリアルズ・インコーポレイテツド | Method of coating a photoresist composition onto a substrate |
| JPH09173957A (en) * | 1995-12-26 | 1997-07-08 | Nec Corp | Method for flattening substrate surface |
| JP2013138972A (en) * | 2011-12-28 | 2013-07-18 | Leap Co Ltd | Spray coater |
| JP2018118197A (en) * | 2017-01-24 | 2018-08-02 | 株式会社テックインテック | Coating liquid coating method |
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