JPH01253923A - Coating-film eliminating device - Google Patents
Coating-film eliminating deviceInfo
- Publication number
- JPH01253923A JPH01253923A JP8200988A JP8200988A JPH01253923A JP H01253923 A JPH01253923 A JP H01253923A JP 8200988 A JP8200988 A JP 8200988A JP 8200988 A JP8200988 A JP 8200988A JP H01253923 A JPH01253923 A JP H01253923A
- Authority
- JP
- Japan
- Prior art keywords
- coating film
- nozzle
- semiconductor wafer
- fluid
- jetted out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 238000000576 coating method Methods 0.000 claims abstract description 48
- 239000012530 fluid Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000000126 substance Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えばフォトレジスト等のウェハ塗布膜を除
去する場合に使用する塗布膜除去装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a coating film removal apparatus used for removing a wafer coating film such as photoresist.
一般に、この種の塗布膜除去装置は半導体製造プロセス
における薬液塗布後に使用する装置として知られており
、従来より第３図に示すように構成されている。これを
同図に基づいて概略説明すると、同図において、符号１
で示すものはレジストカップ（図示せず）の内部に設置
され薬液２を噴射するノズル、３はこのノズル１下方に
設けられフォトレジスト等の塗布膜４が形成された半導
体ウェハである。Generally, this type of coating film removal apparatus is known as an apparatus used after applying a chemical solution in a semiconductor manufacturing process, and has conventionally been constructed as shown in FIG. 3. This will be briefly explained based on the figure. In the figure, reference numeral 1
1 is a nozzle installed inside a resist cup (not shown) for spraying a chemical solution 2, and 3 is a semiconductor wafer provided below this nozzle 1 on which a coating film 4 of photoresist or the like is formed.
このように構成された塗布膜除去装置を用いて塗布膜の
エツジ部分を除去するには、半導体ウェハ３上の塗布膜
４のエツジ部分に対してノズル１から薬液２を滴下する
ことにより行う。In order to remove the edge portion of the coating film using the coating film removing apparatus configured as described above, the chemical solution 2 is dropped from the nozzle 1 onto the edge portion of the coating film 4 on the semiconductor wafer 3.
ところで、従来の塗布膜除去装置においては、除去時に
半導体ウェハ３上の塗布膜４を押さえる機能を備えてお
らず、このためノズル１による噴射力が塗布膜４のエツ
ジ部分に側方から作用してこのエツジ部分が第４図に矢
印Ａで示すように盛り上がっていた。この結果、後工程
で塗布膜４の一部が剥離してパターン欠陥となり、半導
体製品としての品質が低下するという問題があった。By the way, the conventional coating film removal apparatus does not have a function of pressing down the coating film 4 on the semiconductor wafer 3 during removal, and therefore the jetting force from the nozzle 1 acts on the edge portion of the coating film 4 from the side. The edge of the lever was raised as shown by arrow A in Figure 4. As a result, a portion of the coating film 4 peels off in a subsequent process, resulting in pattern defects, resulting in a problem that the quality of the semiconductor product deteriorates.
本発明はこのような事情に鑑みなされたもので、半導体
製造プロセスにおけるパターン欠陥を低減することがで
き、もって半導体製品としての品質を向上させることが
できる塗布膜除去装置を提供するものである。The present invention has been made in view of these circumstances, and it is an object of the present invention to provide a coating film removal device that can reduce pattern defects in semiconductor manufacturing processes and thereby improve the quality of semiconductor products.
本発明に係る塗布膜除去装置は、ウェハ塗布膜のエツジ
部分を除去する流体を噴射する第１のノズルと、このノ
ズルの近傍に設けられウェハ塗布膜の周縁一部に対して
流体を噴射する第２のノズルとを備えたものである。The coating film removal device according to the present invention includes a first nozzle that injects a fluid for removing an edge portion of a wafer coating film, and a first nozzle that is installed near this nozzle and injects the fluid toward a part of the periphery of the wafer coating film. and a second nozzle.
本発明においては、第２のノズルから噴射する流体によ
って半導体ウェハ上の塗布膜の周縁一部を押さえ、この
状態で第１のノズルから噴射する流体によって塗布膜の
エツジ部分を除去することができる。In the present invention, a part of the periphery of the coating film on the semiconductor wafer is pressed down by the fluid injected from the second nozzle, and in this state, the edge portion of the coating film can be removed by the fluid injected from the first nozzle. .
第１図は本発明に係る塗布膜除去装置を示す断面図で、
同図以下において第３図および第４図と同一の部材につ
いては同一の符号を付し、詳細な説明は省略する。同図
において、符号１１で示すものは薬液２を噴射する第１
のノズルで、レジストカップ（図示せず）の内部に設置
されており、噴射時に前記半導体ウェハ３上の塗布膜４
のエツジ部分を除去するように構成されている。１２は
前記塗布膜４の周縁一部に対して例えばＮ！ガス等の流
体１３を噴射する第２のノズルで、前記第１のノズル１
１の近傍に設けられている。この第２のノズル１２は、
前記第１のノズル１１１に対して４５″以下の傾斜角度
をもつ角度に設定されている。また、この第２のノズル
１２および前記第１のノズル１１のノズル口径は１ｆｌ
以下の寸法に設定されている。なお、図中、矢印Ｂは塗
布膜４の除去時において吹き飛ばされた薬液２を示す。FIG. 1 is a sectional view showing a coating film removal device according to the present invention.
In the same figure and the following figures, the same members as in FIGS. 3 and 4 are designated by the same reference numerals, and detailed explanations will be omitted. In the same figure, the one indicated by reference numeral 11 is the first one that injects the chemical solution 2.
The nozzle is installed inside a resist cup (not shown) and sprays the coating film 4 on the semiconductor wafer 3 during spraying.
is configured to remove the edge portion of the For example, N!12 is applied to a part of the peripheral edge of the coating film 4! A second nozzle that injects a fluid 13 such as gas, which is connected to the first nozzle 1.
1. This second nozzle 12 is
The nozzle diameter of the second nozzle 12 and the first nozzle 11 is set at an angle of 45'' or less with respect to the first nozzle 111.
The dimensions are set as below. Note that in the figure, arrow B indicates the chemical solution 2 that was blown away when the coating film 4 was removed.
このように構成された塗布膜除去装置においては、第２
のノズル１２から噴射するＮ！ガスによって半導体ウェ
ハ３上の塗布膜４の周縁一部を押さえ、この状態で第１
のノズル１１から噴射する薬液２によって塗布膜４のエ
ツジ部分を除去することができる。このとき、第２のノ
ズル１２から噴射するＮ２ガスは薬液２を半導体ウェハ
３の周囲に吹き飛ばす。In the coating film removal apparatus configured in this way, the second
N! is injected from the nozzle 12 of A part of the periphery of the coating film 4 on the semiconductor wafer 3 is pressed down by gas, and in this state, the first
The edge portion of the coating film 4 can be removed by the chemical liquid 2 sprayed from the nozzle 11 of the coating film 4. At this time, the N2 gas injected from the second nozzle 12 blows the chemical solution 2 around the semiconductor wafer 3.
したがって、本発明においては、第１のノズル１１によ
る噴射力が塗布膜４のエツジ部分に側方から作用しても
この部分が盛り上がらず第２図に示すように平坦な表面
にすることができるから、後工程で塗布膜４の剥離を防
止することができ、半導体製造プロセスにおけるパター
ン欠陥を低減することができる。Therefore, in the present invention, even if the jetting force from the first nozzle 11 acts on the edge portion of the coating film 4 from the side, this portion does not swell and the surface can be made flat as shown in FIG. Therefore, it is possible to prevent the coating film 4 from peeling off in a subsequent process, and it is possible to reduce pattern defects in the semiconductor manufacturing process.
なお、本実施例においては、第２のノズル１２から噴射
する流体としてＮ２ガスである場合を示したが、本発明
はこれに限定されるものではなく、例えば薬液２の溶剤
の飽和蒸気を使用しても何等差し支えない。In this embodiment, a case is shown in which N2 gas is used as the fluid injected from the second nozzle 12, but the present invention is not limited to this. For example, saturated vapor of the solvent of the chemical solution 2 may be used. Even if you do, there is no problem.
また、本実施例においては、フォトレジスト等の塗布膜
４を除去する場合に適用する例を示したが、本発明はこ
の他ポリイミドやシリカガラス等の塗布膜を除去する場
合にも適用可能である。Furthermore, in this embodiment, an example is shown in which the coating film 4 of photoresist or the like is removed, but the present invention can also be applied to the case of removing coating films of polyimide, silica glass, etc. be.
以上説明したように本発明によれば、ウェハ塗布膜のエ
ツジ部分を除去する流体を噴射する第１のノズルと、こ
のノズルの近傍に設けられウェハ塗布膜の周縁一部に対
して流体を噴射する第２のノズルとを備えたので、第２
のノズルから噴射する流体によって半導体ウェハ上の塗
布膜の周縁−部を押さえ、この状態で第１のノズルから
噴射する流体によって塗布膜のエツジ部分を除去するこ
とができる。したがって、除去時に第１のノズルによる
噴射力が塗布膜のエツジ部分に側方から作用してもこの
部分が盛り上がることがなくなるから、後工程で塗布膜
の剥離を防止して半導体製造プロセスにおけるパターン
欠陥を低減することができ、半導体製品としての品質を
確実に向上させることができる。As explained above, according to the present invention, there is provided a first nozzle that injects a fluid for removing the edge portion of the wafer coating film, and a first nozzle that is provided near this nozzle and that injects the fluid to a part of the periphery of the wafer coating film. Since the second nozzle is equipped with
The peripheral edge portion of the coating film on the semiconductor wafer is pressed by the fluid sprayed from the first nozzle, and in this state, the edge portion of the coating film can be removed by the fluid sprayed from the first nozzle. Therefore, even if the jetting force from the first nozzle acts on the edge part of the coating film from the side during removal, this part will not swell up. Defects can be reduced and the quality of semiconductor products can be reliably improved.
第１図は本発明に係る塗布膜除去装置を示す断面図、第
２図は同じく本発明における塗布膜除去装置を用いて実
施した例を示す断面図、第３図は従来の塗布膜除去装置
を示す断面図、第４図はその塗布膜除去装置を用いて実
施した例を示す断面図である。
３・・・・半導体ウェハ、４・・・・塗布膜、１１・・
・・第１のノズル、１２・・・・第２のノズル、１３・
・・・流体。
代 理 人 大 岩 増 雄第１図
１１；才１のノス”Ｉし
第２図FIG. 1 is a cross-sectional view showing a coating film removing device according to the present invention, FIG. 2 is a cross-sectional view showing an example using the coating film removing device according to the present invention, and FIG. 3 is a conventional coating film removing device. FIG. 4 is a cross-sectional view showing an example using the coating film removing apparatus. 3... Semiconductor wafer, 4... Coating film, 11...
...First nozzle, 12...Second nozzle, 13.
···fluid. Agent Masuo Oiwa Figure 1 11;
Claims (1)
第１のノズルと、このノズルの近傍に設けられウェハ塗
布膜の周縁一部に対して流体を噴射する第２のノズルと
を備えたことを特徴とする塗布膜除去装置。A first nozzle that injects a fluid for removing an edge portion of a wafer coating film, and a second nozzle that is provided near this nozzle and injects a fluid toward a part of the periphery of the wafer coating film. Characteristic coating film removal equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8200988A JPH01253923A (en) | 1988-04-01 | 1988-04-01 | Coating-film eliminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8200988A JPH01253923A (en) | 1988-04-01 | 1988-04-01 | Coating-film eliminating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01253923A true JPH01253923A (en) | 1989-10-11 |
Family
ID=13762523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8200988A Pending JPH01253923A (en) | 1988-04-01 | 1988-04-01 | Coating-film eliminating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01253923A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175117A (en) * | 1991-12-24 | 1993-07-13 | Dainippon Screen Mfg Co Ltd | Cleaner for edge of substrate |
| EP1055463A2 (en) * | 1999-05-19 | 2000-11-29 | Ebara Corporation | Wafer cleaning apparatus |
| US6669809B2 (en) | 2000-02-25 | 2003-12-30 | Nec Lcd Technologies, Ltd. | Apparatus for removing a coating film |
| JP2006339209A (en) * | 2005-05-31 | 2006-12-14 | Sharp Corp | Resist removing apparatus and method therefor |
-
1988
- 1988-04-01 JP JP8200988A patent/JPH01253923A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175117A (en) * | 1991-12-24 | 1993-07-13 | Dainippon Screen Mfg Co Ltd | Cleaner for edge of substrate |
| EP1055463A2 (en) * | 1999-05-19 | 2000-11-29 | Ebara Corporation | Wafer cleaning apparatus |
| EP1055463A3 (en) * | 1999-05-19 | 2003-01-15 | Ebara Corporation | Wafer cleaning apparatus |
| US6615854B1 (en) | 1999-05-19 | 2003-09-09 | Ebara Corporation | Wafer cleaning apparatus |
| US7037853B2 (en) | 1999-05-19 | 2006-05-02 | Ebara Corporation | Wafer cleaning apparatus |
| US6669809B2 (en) | 2000-02-25 | 2003-12-30 | Nec Lcd Technologies, Ltd. | Apparatus for removing a coating film |
| JP2006339209A (en) * | 2005-05-31 | 2006-12-14 | Sharp Corp | Resist removing apparatus and method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950034475A (en) | Treatment method and processing device | |
| US20060151015A1 (en) | Chemical liquid processing apparatus for processing a substrate and the method thereof | |
| US6544590B1 (en) | Liquid coating method, apparatus and film-forming method for producing the same employing excess coating removing unit having absorbent fabric on porous structure | |
| JPH01253923A (en) | Coating-film eliminating device | |
| US7655496B1 (en) | Metal lift-off systems and methods using liquid solvent and frozen gas | |
| JPH08236498A (en) | Method of air knife drying | |
| JP2537611B2 (en) | Coating material coating equipment | |
| JPH03256321A (en) | Resist film forming apparatus | |
| JPH0330426A (en) | Wafer rear surface cleaning device | |
| JPH0294435A (en) | Etching apparatus | |
| JPH01253920A (en) | Formation of coating film | |
| JPS5972725A (en) | Application of resist | |
| JPH01283930A (en) | Wafer chuck | |
| JPH06320099A (en) | Washing nozzle and substrate washing device using the same | |
| JPH04171820A (en) | Method of forming coating | |
| JPS61184824A (en) | Method and device for resist coating | |
| KR950004004Y1 (en) | Sog removing equipment of wafer edge | |
| JP2001217185A (en) | End surface thin-film removing device | |
| JPH08264923A (en) | Method and device from cleaning end face of substrate | |
| JPH0629210A (en) | Coating-film removing mechanism of chemical-liquid coating apparatus | |
| JPS6161416A (en) | Semiconductor manufacturing device | |
| KR20030050950A (en) | Method for coating photoresist | |
| JPH0340429A (en) | Processing liquid jetting device | |
| JPH0461222A (en) | Removal apparatus of resist film | |
| JPS60144735A (en) | Forming method of photoresist film |