JPH0461222A - Removal apparatus of resist film - Google Patents

Abstract

PURPOSE:To prevent a trouble to be caused at a resist film in an element formation region when the resist film on the surface of a semiconductor substrate is removed by providing a means which spouts a gas which has been changed to a plasma, in a concentrated manner, to a resist film formed in the peripheral part of the semiconductor substrate. CONSTITUTION:A rotatable stage 6 is installed at the inside of a chamber 4. A plasma nozzle 3 which passes the upper wall of the chamber 4 is connected to a plasma generation chamber 10. The center of a semiconductor substrate 1 coated with a resist film is aligned; the substrate is placed on and fixed to the stage 6; the tip of the plasma nozzle 3 is pointed to a resist film 2a to be removed at its peripheral part. While the stage 6 is being turned, oxygen which has been changed to a plasma by means of microwaves in the plasma generation chamber 10 is spouted to the resist film 2a from the plasma nozzle 3. The resist film 2a is removed by a dry ashing method using the oxygen which has been changed to the plasma.

Description

[Detailed Description of the Invention] (Summary) This invention relates to an L/cyst film removal device used to remove only a resist film formed on the peripheral portion of a semiconductor substrate. When doing,
1.C1'J'! - Manufacture of conductor device 8 [Culm claw trilithography] - In the resist film removal device for removing the resist film formed on the periphery of the semiconductor substrate, plasma is applied to the resist 1 film formed on the periphery of the 1' conductor substrate. Inside the converted gas,
The apparatus is configured to include a stage 0 for ejecting water.

(2) In the resist film removing apparatus according to claim 1, 1.
The apparatus is configured to include microwave generation means for converting gas into plasma.

[Industrial application field]

The present invention is a resist film removal apparatus used to remove only a resist film formed on the peripheral part of a semiconductor substrate.
There is something C.

After applying and forming a resist film on the surface of the semiconductor substrate by the spin-1-[・method, to remove unnecessary L/DIS[・film on the periphery and end faces of the semiconductor substrate surface,
A wet removal method is used to remove the resist film using a resist film stripping solution, but the remaining resist film (
- A problem has occurred in which the thickness of the film becomes extremely thick in the - part of the film.

Based on the situation described above, it is necessary to remove the unnecessary L/cyst film from the periphery of the conductor substrate 1' by 6J in order to make the thickness of the resist film remaining on the semiconductor substrate 1 uniform. There is a demand for a resist film removal bag surface.

[Prior Art] A conventional L cyst film removal apparatus will be described in detail with reference to FIG. 7.

Conventional resist [film removal equipment] By aligning the center of the stage 26, which is capable of rotary cutting as shown in the figure, with the center of the conductor substrate 1, the conductor substrate I coated with the resist film 2 is placed on the stage 26. This device is equipped with a stripping solution nozzle 23 that sprays stripping solution ζ Machida around the periphery of the ゛f' conductor substrate (2) on which the L, -disF film 2 is to be removed.

When removing a resist film using such a resist film removal device, the stage 26 is rotated at the same time, and the stripping liquid is discharged from the stripping nozzle 23 in the direction of the resist film 2 to remove the resist film 2 from the surrounding area. The L/cyst film 2a4 is dissolved and removed using a stripping solution.

C Problems to be Solved by the Invention] In the conventional resist film removal apparatus described below in j-7, the stripping solution is directly applied to the peripheral area G of the semiconductor substrate from the stripping solution nozzle.
Since the stripping solution is discharged in the direction of ξ7, when the stripping solution hits the semiconductor substrate, the droplets of the stripping solution adhere to the resist film in the element formation area of the semiconductor substrate, and the resist film in the attached part is peeled off. In addition, since the resist film is removed by a chemical process using liquid, the removal liquid in the form of water droplets dries at the tip of the nozzle after the resist film removal process, as shown in Figure 8. The peripheral part of the resist film 2b in the element formation region to be left swells, and its film thickness is twice as thick as that of other parts, and the thickness of the resist film 2b is three times as thick as that of other parts. drowsy・）problem + air 1.

The present invention has been developed to prevent damage caused by removing the resist film in the peripheral area of the surface of the semiconductor substrate kill to the remaining resist film formed in the formation area. The purpose is to provide a resist film removal device with OJ capability.

[Means for Solving the Problems] The resist film removal apparatus of the present invention is capable of removing a resist film formed on the periphery of a semiconductor substrate during the lithography process of the manufacturing process of a semiconductor device. The resist film removing apparatus is equipped with a means for ejecting plasma-converted gas in a concentrated manner onto the resist film formed around the periphery of the cliff conductor substrate.
7. [2] The resist removal apparatus according to claim 1, further comprising a microwave generation stage for converting gas into plasma.

[Effect]

That is, in the resist film removing apparatus of the present invention,
As shown in FIG. 2, a means for ejecting plasma-converted gas through W (L2), e.g., a plasma nozzle 3, is applied only to the resist film 2a formed on the periphery of the semiconductor substrate 1, and the resist film is removed with the gas. Since the treatment is carried out, it is possible to prevent the occurrence of trouble in the semiconductor substrate 1 due to the presence of residual dirt in the element formation region.

[Example] Hereinafter, FIGS. 2 and 3 will show details of a resist film removing apparatus according to one embodiment of the present invention, and FIG. 4 and FIG. 6 will show details of a resist film removing apparatus according to another embodiment of the present invention. Explain.

As shown in FIG. 2, a resist film removing apparatus according to an embodiment of the present invention includes a stage 6 capable of rotating 1] and 2ζ inside a chamber 4, and a 2ζ plasma nozzle 3 that penetrates the earthen wall of the chamber 4. The conductance valve 5 penetrates through the side wall.
An exhaust pipe for evacuating the air inside the chamber 4 and keeping the inside of the chamber 4 in a vacuum is connected to the chamber 4.

This plasma nozzle 3 is connected to a plasma generation chamber 10, and this plasma generation chamber 10 is connected to a microwave generation device W.
7 and a microwave introduction pipe 8, and oxygen is supplied to this plasma generation chamber 10 from a tube loa.

The semiconductor substrate 1 coated with a resist film is placed and fixed on the stage 6 with its centers aligned 2, and the tip of the plasma nozzle 3 is directed toward the resist film 2a to be removed in the peripheral area, While rotating the plasma generation chamber 10, oxygen is turned into plasma by microwaves and is ejected from the plasma nozzle 3 onto the resist film a.Then, the resist film is formed by dry ashing using the plasma nozzle 3. 2a can be removed.

In this embodiment, the pressure inside the chamber 4 and the plasma generation chamber 10 is controlled by adjusting the conductance valve 5.
Torr, the oxygen supply lid to the plasma generation chamber 10 is set at 1500 seconds, and microwaves are applied from the two-wave generator 7 to the plasma generation chamber 10 through the microwave introduction tube 8.1. Reactive species containing 1,000 oxygen atoms are generated in the plasma generation chamber 10 and are discharged from the tip of the plasma nozzle 3 toward the resist film 2i6- to be removed at the peripheral portion of the semiconductor substrate 1.

Since the scrubber 6 is rotated at 500 rpm, it is possible to remove the resist film 2a from the entire peripheral area of the semiconductor substrate 1.

Stage 6 of this cyst film removal device is temperature controlled.
A heater capable of controlling the temperature of the semiconductor substrate 1 placed on the top 7 is controlled to keep the resist film removal processing speed constant at 2.degree. As shown in Figure 3, the relationship between the temperature of the vacuum cleaner 6 and the processing time per 50 semiconductor substrates is 20 minutes at 80"C, and is slightly reduced when the temperature is increased to 24"C. However, it is similar.

Another embodiment of the resist film removing apparatus according to the present invention is the fourth embodiment.
As shown in the figure, a stage 16 capable of rotating 6J is provided inside the chamber 14, and a shielding plate 21 is provided above the chamber 14.

A conductance valve 15 is provided on the side wall of the chamber 14 near the periphery of the stage 160, and an exhaust pipe connected to a vacuum pump (not shown) is provided, and the chamber pressure is maintained at ITorr by adjusting the conductance valve 15.

The shielding plate 21 whose detailed structure is shown in FIG.
21a are provided at two locations, and have a structure that shields the central portion of the semiconductor substrate 1 where the cliff conductor elements are formed 7 and ejects plasma to the peripheral portion at an angle of 2°.

Above this shielding plate 21 is a plasma generation chamber 20, into which microwaves generated by a microwave generator t17 are introduced through a microwave introduction pipe J8, and this plasma generation chamber 2
The microwave is transmitted through the microwave transmission window 19 at the top of the microwave and applied to the plasma generation chamber 20 of the lever. An oxygen supply port is provided on the side wall of this plasma generation chamber 20, and reactive species mainly containing oxygen atoms are generated in this plasma generation chamber 20, and are ejected from the shielding plate 21 ejection IJ 2 ], a. be done.

The semiconductor substrate 1 coated with a resist film is placed and fixed on a stage 16, and the resist film 2a to be removed in the peripheral area is
Since the tip of the jet 021a is directed at 1ζ, the stage 16 is rotated and the oxygen which has been turned into plasma by microwaves in the plasma generation chamber 20 is jetted out IX',',]
When the resist film 2a is ejected from the resist film 21a, it becomes possible to remove the resist film 2a by a dry ashing method using the oxygen turned into plasma.

In this embodiment, the oxygen supply amount is set to ISL? ! Nishi 2
When microwaves are applied from the microwave generator 17 to the plasma generation chamber 20 through the microwave introduction pipe 18, reactive species with the oxygen source j'- as iso are generated in the plasma generation chamber 20, and are ejected [ ',] is ejected from the tip of 21a toward the resist film 2aQ to be removed around the periphery of the conductor substrate 10.

Since the stage 16 is rotated at 300 rp+n, the resist film 28 from the entire peripheral area of the semiconductor substrate 10 is removed.
Zurugoto becomes 6 ■ Noh.

The stage 16 of this resist film removal device has temperature control 1.
(1) A function controller is provided, which is placed on the resistor (1) to control the temperature of the semiconductor substrate (1) and to keep the resist film removal processing speed constant. The relationship between the temperature of the slurry 16 and the processing time per 50 semiconductor substrates is as shown in Section 6-1.

According to the present invention - According to the embodiment and other embodiment C, the thickness of the resist film 2h in the center after removing the peripheral part of the semiconductor substrate 1 and the cyst film 2a is all uniform, and buttering is performed. ) when a failure occurred).

[Effects of the Invention] As is clear from the explanation in section t- below, according to the present invention, the gas that has been turned into plasma by microwaves or the like is removed only from the cyst film formed around the periphery of the semiconductor substrate. This 1. U2τ is ejected in the leaf. - Since the cyst film is removed, there is an advantage that it is possible to prevent the L/resist film (2) left in the element formation region from becoming enlarged and causing problems when performing buttering.1. It becomes possible to provide a resist film removal device that can be expected to have the effect of significantly improving crystallinity.

[Brief explanation of the drawing]

Figure 1 is a diagram of the principle of the present invention, Figure 2 is a schematic diagram of the structure of the 17th embodiment of the dust film removal apparatus according to the present invention, and Figure 3 is a diagram of the second resist film removal apparatus. 1 and 4 show the schematic structure of a mist film removal apparatus according to another embodiment of the present invention, and FIG. 5 shows the relationship between the stage temperature and processing time. The structure of the shielding plate in Figure 4 is
The figure shows the relationship between the stage temperature and processing time in the resist film removal apparatus shown in Fig. 4, Figure 7 shows the schematic structure of the conventional resist film removal apparatus, and Fig. 8 shows the conventional resist film removal apparatus. The diagram below shows the problems with the equipment. In the figure, 1 is a semiconductor substrate, 2a is a resist film, 2b is a resist film, and these are not shown. 3 is a plasma nozzle, 4.14 is a chamber, 5.15 is a 7〉' ductance harp, 6.16 is a stage, 7.17 is a microwave generator, H1] 8 is a microwave introduction tube, 19 is a microwave transmission Window, 1.0.20 is a glazma generation chamber, 10a is a thousand beams, 21 is a shielding plate, 21a is a spout 1.4 Scientific diagram of the present invention

Claims (1)

[Scope of Claims] [1] In a resist film removing apparatus for removing a resist film (2a) formed on a peripheral portion of a semiconductor substrate (1) in a photolithography process of a semiconductor device manufacturing process, the semiconductor substrate ( 1) A resist film removing apparatus characterized by comprising means for ejecting plasma-formed gas in a concentrated manner onto the resist film (2a) formed in the peripheral area of the resist film (2a). [2] The resist film removing apparatus according to claim 1, further comprising a microwave generating means for turning gas into plasma.