JPS63134076A - Method and device for coating - Google Patents
Method and device for coatingInfo
- Publication number
- JPS63134076A JPS63134076A JP27856386A JP27856386A JPS63134076A JP S63134076 A JPS63134076 A JP S63134076A JP 27856386 A JP27856386 A JP 27856386A JP 27856386 A JP27856386 A JP 27856386A JP S63134076 A JPS63134076 A JP S63134076A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- protective film
- coated
- film
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 44
- 239000011248 coating agent Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000004528 spin coating Methods 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 abstract description 29
- 239000004642 Polyimide Substances 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 55
- 238000010586 diagram Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009423 ventilation Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
饗
本発明は例えば半導体劉造プロセスにおける被塗布物へ
の塗布方法及び塗布装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a method and apparatus for coating an object to be coated in, for example, a semiconductor manufacturing process.
（従来の技術）
半導体製造プロセスには被塗布物であるウェハーに、塗
布物としてレジストあるいはポリイミド系樹脂等を塗布
する工程がある。この工程では、ウェハーにレジストを
塗布して熱処理を施こす場合や、ウェハーに１層目とし
てポリイミド系樹脂等を塗布し、２層目としてレジスト
とする場合などがある。ここでは、ウェハーへ塗布する
１層目をポリイミド膜５３とし、２層目をレジスト膜と
した場合を例にとり、従来の技術を第５図を用いて説明
する。(Prior Art) A semiconductor manufacturing process includes a step of coating a wafer, which is an object to be coated, with a resist, polyimide resin, or the like as a coating material. In this step, there are cases in which a resist is applied to the wafer and heat treatment is performed, or a case in which a polyimide resin or the like is applied to the wafer as a first layer and a resist is used as a second layer. Here, the conventional technique will be explained using FIG. 5, taking as an example the case where the first layer coated on the wafer is a polyimide film 53 and the second layer is a resist film.
保持部６０は真空ポンプ５９と、通気孔５７を有する回
転軸郭と、その回転軸郭に設けられた真空チャック５５
とによって構成され、ウェハーヌを真空チャック５５に
よって吸着する。供給部５２はポリイミド５３ａの入り
たタンク５１とそれに設けられたノズ、Ａ１５０から構
成されている。このノズル５０を通シてポリイミド５３
ａをウェハーシの中心上に滴下する。The holding part 60 includes a vacuum pump 59, a rotating shaft having a ventilation hole 57, and a vacuum chuck 55 provided on the rotating shaft.
The wafer is attracted by a vacuum chuck 55. The supply section 52 is composed of a tank 51 containing polyimide 53a and a nozzle A150 provided therein. The polyimide 53 is passed through this nozzle 50.
Drop a onto the center of the wafer.
そして駆動部であるモーター５８によりウェハー８を回
転させ、滴下したポリイミド５３ａをクエハ−表面に均
一に塗布しポリイミド膜５３を形成させる。Then, the wafer 8 is rotated by a motor 58 serving as a driving section, and the dropped polyimide 53a is uniformly applied to the surface of the wafer to form a polyimide film 53.
ところがこのようにしてポリイミド膜５３を形成すると
、回転塗布後、ポリイミド５３ａがウェハー詞の裏面に
廻り込んでしまっていた。このウェハー裏面のポリイミ
ドは一層目のポリイミド膜５３の熱処理により、硬化し
、さらに、２層目に形成されたレジスト膜の熱処理でウ
ェハー裏面にはポリイミドに加えてレジストも硬化して
付着することになる。これは露光工程で問題となる。第
６図を用いてそれを説明する。However, when the polyimide film 53 was formed in this manner, the polyimide 53a wound around the back surface of the wafer after spin coating. The polyimide on the back side of the wafer is hardened by the heat treatment of the first layer polyimide film 53, and furthermore, the resist in addition to the polyimide is hardened and adhered to the back side of the wafer due to the heat treatment of the resist film formed as the second layer. Become. This poses a problem in the exposure process. This will be explained using FIG.
ステツバ−７０は光源７１とレチクル７２と縮少レンズ
７３によって構成される。光源７１よりレチクル７２へ
光を当て、縮少レンズ７３でパターンを縮少し、ウェハ
ー７５のポリイミド膜７４の上く形成されたレジスト膜
７９に露光する。この際、通気孔ｎを有するウェハーチ
ャック７８によってウェハー７５を真空吸着すると、そ
のウェハー７５の裏面のポリイミドとレジストの硬化物
７６が原因で、その部分のウェハー７５が歪み、その歪
んだ部分において露光のフォーカスの位置が垂直方向に
ずれてしまっていた。The step bar 70 is composed of a light source 71, a reticle 72, and a reduction lens 73. Light is applied to the reticle 72 from the light source 71, the pattern is reduced by the reduction lens 73, and the resist film 79 formed on the polyimide film 74 of the wafer 75 is exposed to the light. At this time, when the wafer 75 is vacuum-chucked by the wafer chuck 78 having ventilation holes n, the wafer 75 is distorted in that part due to the cured product 76 of polyimide and resist on the back side of the wafer 75, and the distorted part is exposed to light. The focus position of the camera was shifted vertically.
これはウェハー７５への微細パターンの転写に対して重
要な、解偉度を低下させる原因となる。又、ウェハーチ
ャック７８にポリイミドとレジストの硬化物７６が付着
して別のウェハーをウェハーチャック７８で吸着したと
き、その別のウェハーも同様に歪むことになってしまう
。さらにはポリイミドとレジストの硬化物７６がウェハ
ーチャック７８の表面に設けられた通気孔７７をふさぐ
ことにもなる。このような悪影響を回避するために従来
は第５図のような除去部を設けていた。This causes a decrease in resolution, which is important for transferring fine patterns onto the wafer 75. Further, when the cured product 76 of polyimide and resist adheres to the wafer chuck 78 and another wafer is picked up by the wafer chuck 78, that other wafer will be similarly distorted. Furthermore, the cured product 76 of polyimide and resist also blocks the ventilation hole 77 provided on the surface of the wafer chuck 78. In order to avoid such adverse effects, a removal section as shown in FIG. 5 has conventionally been provided.
除去部６はシンナー６１の入ったタンク６３とそれに設
けられたノズル６２から構成されている。そこでこのノ
ズル６２よりシンナー６１ヲウエハー９の裏面に廻り込
んだポリイミドに吹きつけることにより除去し、また２
層目をレジストとしたときにはウェハーシの裏面に廻り
込んだレジストも同様に除去し、ウェハー８の裏面の平
坦性を保つようにしていた。The removal section 6 is composed of a tank 63 containing thinner 61 and a nozzle 62 provided therein. Therefore, the thinner 61 is removed from the nozzle 62 by spraying it onto the polyimide that has gone around the back surface of the wafer 9.
When the layer is a resist, the resist that has gotten around to the back side of the wafer 8 is also removed in the same way to maintain the flatness of the back side of the wafer 8.
（発明が解決しようとする問題点）
上記方法では、ウェハーの裏面に付着した塗布物を除去
する場合、塗布物によってはウェハーの裏面への付着力
が強い場合があったり、又、塗布物に対して有効な除去
液がなかつたりして、実際には取りきれないことが多か
った。(Problems to be Solved by the Invention) In the above method, when removing a coating material that has adhered to the back surface of a wafer, depending on the coating material, the adhesion force to the back surface of the wafer may be strong; However, in many cases, there is no effective removal solution available, and in reality, it cannot be removed.
本発明は、上記の問題点を解決するために被塗布物の裏
面に廻り込んだ塗布物を除去することができる塗布方法
及・び塗布装置を提供することを目的とする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, it is an object of the present invention to provide a coating method and a coating device that can remove coating material that has gotten around to the back side of an object to be coated.
（問題点を解決するための手段）
上記目的を達成するために、本発明においては、被塗布
物の裏面に保！！膜を形成する工程と、前記被塗布物表
面へ塗布物を供給する工程と、この供給された塗布物を
前記被塗布物表面に回転塗布する工程と、前記保護膜を
除去する工程とを有する塗布方法及び、被塗布物を着脱
自在に保持する手段と、前記被塗布物を回転させる駆動
手段と、前記被塗布物の表面へ塗布物を供給する手段と
、前記被塗布物の裏面に保護膜を形成する手段と、前記
保護膜を除去する手段を備えたことを特徴とする塗布装
置を提供する。(Means for Solving the Problems) In order to achieve the above object, in the present invention, a coating film is applied to the back side of the object to be coated. ! The method includes a step of forming a film, a step of supplying a coating material to the surface of the object to be coated, a step of spin-coating the supplied coating material to the surface of the object to be coated, and a step of removing the protective film. a coating method, a means for detachably holding an object to be coated, a driving means for rotating the object to be coated, a means for supplying the coating material to the surface of the object to be coated, and a means for protecting the back surface of the object to be coated. Provided is a coating device characterized by comprising means for forming a film and means for removing the protective film.
（作用）
保持部によって保持された被塗布物裏面に保護膜を形成
させる。次に被塗布物表面に供給部より塗布物を供給し
て、駆動部により被塗布物に回転塗布を施こす。この回
転塗布を終えると、被塗布物裏面の保護膜上に塗布物が
廻り込む。あらかじめ形成しておいた保護膜のために、
廻り込んできた塗布物は被塗布物裏面に直接付着するこ
とはなくなる。そこで保護膜を除去部で除去することに
より、保護膜上の塗布物を除去できる。(Function) A protective film is formed on the back surface of the object held by the holding section. Next, the coating material is supplied from the supply section to the surface of the object to be coated, and the drive section performs rotational coating on the object. When this rotational coating is completed, the coating material wraps around the protective film on the back surface of the object to be coated. Due to the pre-formed protective film,
The coating material that has come around will no longer adhere directly to the back surface of the object to be coated. Therefore, by removing the protective film with the removal section, the coated material on the protective film can be removed.
このようにして、あらかじめ形成しておいた保護膜のた
めに、被塗布物の裏面に廻り込んできた塗布物は直接そ
の裏面に付着せず保護膜上に付着することになる。そこ
で保護膜を除去部で除去することにより、保護膜上に付
着した塗布物を除去できる。In this way, because of the protective film that has been formed in advance, the coating material that has come around to the back surface of the object to be coated does not directly adhere to the back surface, but instead adheres to the protective film. Therefore, by removing the protective film with the removal section, the coating material adhering to the protective film can be removed.
（実施例） 以下、本発明による一実施例を図面を用いて説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第１図は塗布装置の構成図である。それについて各構成
部を説明すると、保持部７は真空ポンプ６と、それにつ
ながった通気孔４を有する回転軸３と、その回転軸３に
設けられた真空チャック２より構成される。駆動部であ
るモーター５は回転軸３を齋転させる構造となっている
。供給部１５は塗布物の入ったタンク１４とそのタンク
１４に設けられたノズル１３から成り、ノズル１３の先
端部はウェハー１の中心上に位置する。保護膜形成部１
１は保護膜用レジストの入ったタンク１０とそのタンク
１０に設けられたノズル９から成り、ノズル先端部分は
鉛直方向に対し上方の被塗布物であるウェハー１の中心
から円周方向に向けられている。FIG. 1 is a configuration diagram of a coating device. To explain each component, the holding section 7 is composed of a vacuum pump 6, a rotating shaft 3 having a ventilation hole 4 connected thereto, and a vacuum chuck 2 provided on the rotating shaft 3. The motor 5, which is a driving section, is configured to rotate the rotating shaft 3. The supply section 15 consists of a tank 14 containing a coating material and a nozzle 13 provided in the tank 14, with the tip of the nozzle 13 located above the center of the wafer 1. Protective film forming part 1
1 consists of a tank 10 containing a resist for a protective film and a nozzle 9 provided in the tank 10, and the tip of the nozzle is directed in the circumferential direction from the center of the wafer 1, which is the object to be coated, above the vertical direction. ing.
保護膜除去部１９は除去液である現像液の入った３寄ｆ
ンク１８に設けられたノズル１７から成り、ノズル１７
の先端部はノズル９と同様の形状にし、そして保護膜除
去部１９はウェハー１に対して保護膜形成部の内側にあ
る。洗浄部スはタンクηとそのタンク乙に設けられたノ
ズル４から成る。尚、保護膜形成部１１、保護膜除去部
１９、洗浄部乙はウェハー１に対して一直線上に配置さ
れる必要はない。The protective film removing section 19 contains a third tank containing a developing solution which is a removing solution.
Consisting of a nozzle 17 provided in a nozzle 18, the nozzle 17
The tip of the nozzle 9 has the same shape as the nozzle 9, and the protective film removing part 19 is located inside the protective film forming part with respect to the wafer 1. The cleaning section consists of a tank η and a nozzle 4 provided in the tank O. Note that the protective film forming section 11, the protective film removing section 19, and the cleaning section B do not need to be arranged in a straight line with respect to the wafer 1.
次に第２図を用いて塗布方法を説明する。モーター５に
よりウェハー１を回転させながら、保護膜とする離脱性
の良い粘度が２００ｐ程度のレジスト８ａの入りたタン
ク１０からノズル９を介しウェハー１の裏面の周辺部に
レジス） ８ａを吹きつけ塗布し、レジスト膜８を形成
させる（第２図（４）参照）。ウェハー１の表面に塗布
物とするポリイミド１２ａの入ったタンク１４からノズ
ル１３を介しウェハー１の表面中心にポリイミド１２ａ
を滴下する。次にモーター５によりウェハー１を回転さ
せウェハー１の表面にポリイミド膜１２を形成させる。Next, the coating method will be explained using FIG. 2. While the wafer 1 is being rotated by the motor 5, a resist 8a is sprayed onto the periphery of the back surface of the wafer 1 through a nozzle 9 from a tank 10 containing a resist 8a having a viscosity of about 200p and having good releasability as a protective film. Then, a resist film 8 is formed (see FIG. 2 (4)). Polyimide 12a is applied to the center of the surface of the wafer 1 through a nozzle 13 from a tank 14 containing polyimide 12a to be applied onto the surface of the wafer 1.
drip. Next, the wafer 1 is rotated by the motor 5 to form a polyimide film 12 on the surface of the wafer 1.
すると、回転塗布後あらかじめ形成しておいたウェハー
１の裏面のレジスト膜８上にポリイミド１２ｂが廻り込
む（第２図（Ｂ）参照）。尚、レジスト膜８はウニ／・
−１の裏面の中心に一番近く廻り込んだポリイミド１２
ｂの部分までは少なくとも形成されているものとする。Then, the polyimide 12b wraps around onto the resist film 8 on the back surface of the wafer 1 which has been formed in advance after spin coating (see FIG. 2(B)). In addition, the resist film 8 is made of sea urchin/.
Polyimide 12 that is closest to the center of the back side of -1
It is assumed that at least part b is formed.
ウェハー１をモーター５により回転させながら、現像液
１６の入ったタンク１８からノズル１７を介してレジス
ト膜８を除去するためＫそれに向けて現像液を吹きつけ
る。レジスト膜８を除去することによりポリイミド１２
ｂも除去される。さらに純水加の入ったタンクｎからノ
ズル２１を介してウェハー１の裏面に純水加を吹きつけ
ることにより現像液１６を洗い流し、ウェハー１の裏面
を清浄化する（第２図（０）参照）。While the wafer 1 is being rotated by the motor 5, a developer is sprayed from a tank 18 containing a developer 16 toward it through a nozzle 17 in order to remove the resist film 8. By removing the resist film 8, the polyimide 12
b is also removed. Furthermore, pure water is sprayed onto the back surface of the wafer 1 from the tank n containing pure water through the nozzle 21 to wash away the developer 16 and clean the back surface of the wafer 1 (see FIG. 2 (0)). ).
このようにしてウェハー１に１層目としてポリイミド膜
１２を形成させたあと、熱処理によってポリイミド膜１
２を硬化させウェハー１に密着させる。After forming the polyimide film 12 as the first layer on the wafer 1 in this way, the polyimide film 12 is formed by heat treatment.
2 is cured and brought into close contact with the wafer 1.
この熱処理工程が終了したあと、また塗布工程に東
戻り待禄横七手上記塗布工程とポリイミド膜８上に２層
目としてレジスト膜を形成させる。その際保護膜は１層
目と同様にレジスト膜８をウェハー１の裏面に形成する
。ただし、供給部のタンクは塗布用レジストのタンクに
交換されているものとする。そして塗布工程を終了した
ら再度熱処理を施こし、次の露光装置によるレジストへ
の露光工程へと送られていく。After this heat treatment step is completed, a second resist film is formed on the polyimide film 8 in the coating step. At this time, as the protective film, a resist film 8 is formed on the back surface of the wafer 1 in the same way as the first layer. However, it is assumed that the supply unit tank has been replaced with a coating resist tank. After the coating process is completed, heat treatment is performed again, and the resist is sent to the next exposure process using an exposure device.
本実施例によればウェハー１の裏面が清浄化されること
により、露光工程でのウェハー上く形成されたレジスト
への露光の際のフォーカスのずれを防止し、ウェハー１
の露光面に対し鉛直方向の７オーカスレベＮｅ定を安定
させることができる。According to this embodiment, by cleaning the back surface of the wafer 1, it is possible to prevent a focus shift when exposing the resist formed on the wafer in the exposure process, and
It is possible to stabilize the 7-orcus level Ne constant in the vertical direction with respect to the exposed surface.
この実施例で使われる現像液１６とこの現像液に対して
離脱性のいいレジスト膜８との組み合せとしてはアルカ
リ現像液とノボラック系及びポリビニールフェノール系
レジストとの組み合せ、シンナーとゴム系ネガレジスト
との組み合せなどがある。又、レジスト膜８はウェハー
１の裏面の周辺部としたが、ウェハー１の裏面の中心に
一番近く廻り込んだポリイミド１２ｂの部分までは少な
くとも形成されているものとする。The combinations of the developer 16 used in this embodiment and the resist film 8 that has good releasability to this developer include a combination of an alkaline developer and a novolak or polyvinylphenol resist, or a combination of a thinner and a rubber-based negative resist. There are combinations such as Furthermore, although the resist film 8 was formed around the periphery of the back surface of the wafer 1, it is assumed that it is formed at least up to the portion of the polyimide 12b which is closest to the center of the back surface of the wafer 1.
尚、上記の塗布用レジストは保護膜用レジストとは異な
るものであり、被塗布物に付いた際、現像液等の除去液
に対して離脱性の悪いものとする。The above-mentioned coating resist is different from the protective film resist, and when it adheres to the object to be coated, it has poor removability with respect to a removal solution such as a developer.
また、保護膜用レジスト膜は現像液等の除去液に対して
離脱性が良く簡単に除去できるものとする。Further, the resist film for the protective film has good releasability with respect to a removing solution such as a developer and can be easily removed.
次に上記実施例及び従来技術を用い、ウェハー上に転写
されたパターンにおいて、所望するパターン寸法を１．
５μｍと設定した場合に、ウェハー上の各半導体チップ
に形成されるパターン寸法のばらつきを調べてみた。５
インチのウェハーで、１つのウェハーから５チツプをサ
ンプルとし、これを１つのロフトから取れるス枚のウェ
ハー全部からサンプルを取る。計１２０個のチップのサ
ンプルに対してｔ、ツブのパターンの測定寸法に対する
ばらつきの度数を調べたグラフが第３図である。従来例
と比較して実施例ではばらつきが少なくなり、所望する
パターン寸法も数多く得られている。第４図は露光する
際のマスクの寸法に対して半導体チップの歩留りとの関
係を示したグラフである。Next, using the above embodiment and the conventional technique, the desired pattern size is set to 1.
We investigated the variation in pattern dimensions formed on each semiconductor chip on a wafer when the thickness was set to 5 μm. 5
For inch wafers, 5 chips are sampled from one wafer, and samples are taken from all the wafers that can be obtained from one loft. FIG. 3 is a graph showing the frequency of variation with respect to t and the measured dimension of the bump pattern for a total of 120 chip samples. In comparison with the conventional example, variations are reduced in the example, and many desired pattern dimensions are obtained. FIG. 4 is a graph showing the relationship between the dimensions of a mask during exposure and the yield of semiconductor chips.
従来例に比べて実施例での歩留りは向上していることが
わかる。It can be seen that the yield in the example is improved compared to the conventional example.
上記実施例においては保護膜をレジストとしたが、本発
明はこれに限られず、例えばフィルム等を張り付けても
よい。すなわち保護膜は被塗布物の裏面につけると、密
着はするが被塗布物の裏面に廻り込んだ塗布物を付着さ
せたあと、その保護膜をきれに除去することができるも
のであれば曳い。尚、この場合、フィルム等をウェハー
１の裏面全部に張りつけてから、ウェハー１を保持して
もよい。又、保持手段として実施例においては真空吸着
による被塗布物の保持としたが、これに限られず着脱自
在で被塗布物を傷つけずかつ歪めることなく、一度保持
したら被塗布物がずれることのない保持手段であればよ
い。In the above embodiments, the protective film is a resist, but the present invention is not limited to this, and for example, a film or the like may be attached. In other words, when a protective film is applied to the back side of an object to be coated, it will stick to the object, but if the coating material that has gone around to the back side of the object is attached, it can be removed as long as the protective film can be removed completely. . In this case, the wafer 1 may be held after a film or the like is attached to the entire back surface of the wafer 1. In addition, in the embodiment, the object to be coated is held by vacuum suction as a holding means, but the method is not limited to this.It is detachable and does not damage or distort the object to be coated, and once held, the object to be coated does not shift. Any holding means may be used.
本発明によれば、被塗布物の裏面に保護膜を形成してお
くことで、回転塗布後、被塗布物の裏面の保獲膜上に廻
り込んできた塗布物は、保護膜を容易に除去することに
より、保護膜上の塗布物も除去できる。According to the present invention, by forming a protective film on the back surface of the object to be coated, the coating material that has come around onto the retention film on the back surface of the object to be coated after spin coating can easily remove the protective film. By removing it, the coating material on the protective film can also be removed.
第１図は本発明の一実施例の塗布方法による各工程を示
した図、第２図は本発明の一実施例の塗布装置の構成図
、第３図は半導体チップに形成されたパターン寸法のば
らつきを示した図、第４図はマスク寸法に対する半導体
チップの歩留りを示した図、第５図は従来の塗布装置の
構成図、第６図は露光時における従来の塗布装置の塗布
の問題点を示す図である。
１・・・ウェハー、 ２・・・真空チャック
、３・・・回転軸、 ４・・・通気孔、５・・
・モーター、 ６・・・真空ポンプ、８・・
・保護膜、 ９．１３．１７．２１・・・ノズル
、１０・・・保護膜用レジストの入ったタンク、１４・
・・ポリイミド６の入ったタンク、１８・・・現像液の
入ったタンク、
ｎ・・・純水の入ったタンク。
代理人 弁理士 則 近 憲 佑
同上 大胡典夫
第１図
（Ｃ）
＠２図
一、１ＩＩＩ完寸法Ｃμ” ）
５１１１足寸法（μτつ第３図
マスク寸ン夫（μｍン
＠４図
第５図
第６図Fig. 1 is a diagram showing each process according to a coating method according to an embodiment of the present invention, Fig. 2 is a configuration diagram of a coating apparatus according to an embodiment of the present invention, and Fig. 3 is a diagram showing the dimensions of a pattern formed on a semiconductor chip. Figure 4 is a diagram showing the yield of semiconductor chips with respect to mask dimensions, Figure 5 is a configuration diagram of a conventional coating device, and Figure 6 is a coating problem of a conventional coating device during exposure. It is a diagram showing points. 1... Wafer, 2... Vacuum chuck, 3... Rotating shaft, 4... Ventilation hole, 5...
・Motor, 6... Vacuum pump, 8...
・Protective film, 9.13.17.21... Nozzle, 10... Tank containing resist for protective film, 14.
...tank containing polyimide 6, 18...tank containing developer, n...tank containing pure water. Agent: Patent Attorney Noriyuki Chika Same as above Norio Ogo Figure 1 (C) @2 Figures 1 and 1III Complete dimensions Cμ”)
5111 Foot dimensions (μτ Figure 3 Mask dimensions (μm @4 Figure 5 Figure 6)
Claims (2)
被塗布物表面へ塗布物を供給する工程と、この供給され
た塗布物を前記被塗布物表面に回転塗布する工程と、前
記保護膜を除去する工程とを有する塗布方法。(1) a step of forming a protective film on the back surface of the object to be coated, a step of supplying a coating material to the surface of the object to be coated, a step of spin-coating the supplied coating material on the surface of the object to be coated; A coating method comprising the step of removing the protective film.
布物を回転させる駆動手段と、前記被塗布物の裏面に保
護膜を形成する手段と、前記被塗布物の表面へ塗布物を
供給する手段と、前記保護膜を除去する手段とを備えた
ことを特徴とする塗布装置。(2) means for detachably holding the object to be coated; driving means for rotating the object to be coated; means for forming a protective film on the back surface of the object to be coated; A coating device comprising means for supplying the protective film and means for removing the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27856386A JPS63134076A (en) | 1986-11-25 | 1986-11-25 | Method and device for coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27856386A JPS63134076A (en) | 1986-11-25 | 1986-11-25 | Method and device for coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63134076A true JPS63134076A (en) | 1988-06-06 |
Family
ID=17599007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27856386A Pending JPS63134076A (en) | 1986-11-25 | 1986-11-25 | Method and device for coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63134076A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968770A1 (en) * | 1998-07-03 | 2000-01-05 | L'oreal | Method and apparatus for applying a coating such as paint or varnish |
| US6582137B1 (en) * | 1999-08-05 | 2003-06-24 | Nec Electronics, Inc. | Polyimide coating process with dilute TMAH and DI-water backrinse |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123172A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Spin coating method |
| JPS5372464A (en) * | 1976-12-08 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Method and apparatus for rotary coating |
| JPS5656629A (en) * | 1979-10-15 | 1981-05-18 | Hitachi Ltd | Method and device for application of resist |
| JPS5824189A (en) * | 1981-08-06 | 1983-02-14 | セイコーインスツルメンツ株式会社 | Digital display type panel |
-
1986
- 1986-11-25 JP JP27856386A patent/JPS63134076A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123172A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Spin coating method |
| JPS5372464A (en) * | 1976-12-08 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Method and apparatus for rotary coating |
| JPS5656629A (en) * | 1979-10-15 | 1981-05-18 | Hitachi Ltd | Method and device for application of resist |
| JPS5824189A (en) * | 1981-08-06 | 1983-02-14 | セイコーインスツルメンツ株式会社 | Digital display type panel |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0968770A1 (en) * | 1998-07-03 | 2000-01-05 | L'oreal | Method and apparatus for applying a coating such as paint or varnish |
| FR2780665A1 (en) * | 1998-07-03 | 2000-01-07 | Oreal | METHOD AND DEVICE FOR APPLYING A COATING SUCH AS A PAINT OR VARNISH |
| US6709698B1 (en) | 1998-07-03 | 2004-03-23 | L'oreal | Method and apparatus for applying a coating such as a paint or a varnish |
| US6582137B1 (en) * | 1999-08-05 | 2003-06-24 | Nec Electronics, Inc. | Polyimide coating process with dilute TMAH and DI-water backrinse |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2561964B2 (en) | Use of a specific mixture of ethyl lactate and methyl ethyl ketone to remove unwanted peripheral materials (eg, edge beads) from photoresist coated substrates | |
| JPH10303106A (en) | Development processing device and its processing method | |
| JPS6053305B2 (en) | Development method | |
| JPS63134076A (en) | Method and device for coating | |
| JP3504444B2 (en) | Method of applying resist material and method of manufacturing semiconductor device | |
| JPH07240360A (en) | Chemical coating device | |
| JPS5941300B2 (en) | Development processing equipment | |
| JPS5898733A (en) | Developing device | |
| JPH04206626A (en) | Removal of peripheral resist | |
| KR100591156B1 (en) | Spin coater and method of manufacturing semiconductor device using the same | |
| JPS62142321A (en) | Wafer treatment device | |
| JPH0669126A (en) | Wafer periphery cleaner | |
| JP2537611B2 (en) | Coating material coating equipment | |
| JPH03256321A (en) | Resist film forming apparatus | |
| JPS60110118A (en) | Method and apparatus for coating resist | |
| JP2006073854A (en) | Method for applying photo-resist solution, method for forming photo-resist pattern and method for manufacturing semiconductor device | |
| JPH0554187B2 (en) | ||
| JPS61184824A (en) | Method and device for resist coating | |
| KR100663013B1 (en) | Photoresist Coater and Method of Removing a Photoresist on a Wafer | |
| JPH0575110B2 (en) | ||
| JPH04278518A (en) | Manufacture of semiconductor device and semiconductor manufacturing equipment | |
| JPH11186123A (en) | Development of photosensitive film formed on wafer | |
| KR100605311B1 (en) | Method for forming thick photoresist film | |
| JPH02284415A (en) | Device for removing resist on periphery of semiconductor wafer | |
| JP2007059668A (en) | Manufacturing method of semiconductor device |