JP2007059668A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low-cost manufacturing method of a semiconductor device whereby accurate patterns can be formed on its wafer by using a printed resist film. <P>SOLUTION: The manufacturing method of a semiconductor device has a process for forming accurately a printed resist film containing particle components on the outer periphery of a wafer 6, a process for so removing the surface of the wafer 6 by etching it while using as a mask the printed resist film as to thin the wafer 6, a process for removing thereafter the resin component of the printed resist film containing the particle components, a process for jetting thereafter toluene 16 from a discharging nozzle 15 to the printed resist film, and a process for so contacting pushingly a particle removing member 19 with the outer peripheral portion of the rotated wafer 6 as to remove therefrom the residual particle components 18 of the printed resist film. A thixotropy is so obtained in the manufacturing method of a semiconductor device by using the printed resist material containing the particle components as to be able to form accurate patterns on the wafer 6 at a low cost. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing semiconductor devices such as various ICs (integrated circuits), sensors, and switching elements.

In various ICs and sensors, a metal film is formed for the purpose of wiring on a disk-shaped semiconductor substrate (hereinafter referred to as a wafer) made of silicon or a compound semiconductor, or partially phosphorus, boron, etc. In general, a photoresist film is used as a mask in order to implant impurities in the inside by ion implantation or to partially etch a wafer to make it thin. Is called a photolithography process. In addition, semiconductor chips have been made thinner to improve the characteristics of switching elements such as IGBTs (Insulated Gate Bipolar Transistors), and for that purpose, there is a process of thinning the wafer, and a photoresist film is used as a mask at that time. Used.
FIG. 13 is a diagram showing a process of thinning a wafer using a photoresist, and FIG. 13A to FIG. This is a process for forming a thin film wafer, and thinning the inner part while keeping the outer periphery of the wafer thick is to protect the thin film wafer with a thick frame at the outer periphery, and the wafer is cracked or bent in each processing step. This is to prevent this. The part used as an element is a thinned internal part.

First, using a spin coater called a spin coater, a predetermined amount of a photoresist material 52 is dropped from a nozzle 53 onto a wafer 51 rotating at a high speed of several hundred to several thousand revolutions per minute, and the spread is used. Then, a thin photoresist material 52 is applied onto the wafer 51 (FIG. 1A).
Next, in order to remove the solvent component contained in the photoresist material 51, the wafer 51 is heated on a hot plate or in a thermostatic bath to disperse the solvent component to cure the photoresist material 51. In order to form a pattern on the resist material 51, a quartz glass dry plate on which a pattern having a portion that does not transmit ultraviolet light 55 and a portion that transmits light is used as a mask 54. Irradiation with ultraviolet rays 55 is performed ((b) in the figure).

Next, the photoresist material 52 is etched by being immersed in an organic solvent, and unnecessary photoresist material 52 is removed to form a patterned photoresist film 56. This process is called development ((c) in the figure).
The photoresist material 52 is classified into a positive type and a negative type. By applying a certain amount of ultraviolet rays through the mask 54 after coating, the photoresist material in a portion exposed to light reacts, and the positive type photoresist material is It dissolves in an alkaline aqueous solution, and one negative photoresist material does not dissolve in an organic solvent. Therefore, by irradiating ultraviolet rays through the mask 54 in a positive or negative photoresist material, a patterned photoresist film in which a portion with and without the photoresist material is formed is obtained.
As described above, the formation of the photoresist film 56 in the photolithography process starts from the application of the photoresist material 52 and is performed through each process of heating, exposure, and development (alkali or organic solvent).

Next, a protective film 57 is formed on the back and side surfaces of the wafer 51, and the wafer 51 is immersed in an etching solution 59 such as mixed acid in a container 58 to expose the photoresist film 56 and the protective film 57. The surface of the wafer 51 is etched away to thin the inside of the wafer 51 ((d) in the figure). In this example, the wafer 51 is thinned. However, depending on the purpose, etching of the base (silicon, insulating film, etc.), plating on the base surface, and implantation of impurities into the base (silicon) are performed. Is formed on the wafer.
Next, the photoresist film 56 is removed from the rotating wafer 51 by ejecting a removing liquid 61 such as toluene from the discharge nozzle 60 (FIG. 5E).
Next, the wafer 51 is rotated to disperse the removing liquid 61, washed with water, and then dried to obtain the wafer 51 having a thick outer peripheral portion and a thin inner portion (FIG. 5F).

A method of forming a pattern by a method different from the above is disclosed. For example, a pattern forming method that can be carried out with high definition and high accuracy and at low cost is disclosed. A method is disclosed in which a photo paste is screen-printed and patterned, and the pattern is adjusted by etching to make the pattern high definition and high accuracy. (For example, patent document 1).
In this method, after patterning a photo paste by printing, exposure and development are performed, and an arbitrary pattern is formed by drying and baking. The side surface of the pattern has an inclined surface with respect to the substrate, and development is performed by irradiating the substrate with light in a vertical direction, thereby forming the pattern side surface in the direction perpendicular to the substrate. After patterning the photo paste by printing such as offset or screen, exposure and development are performed to remove excess parts such as shape correction and short defects, and arbitrary patterns are formed with high precision and high precision by drying and baking. Can do.

In addition, a method of forming a resist pattern using a printing technique without using the photolithography process is disclosed (for example, Patent Document 2).
This is a method of transferring a resist pattern formed on a printing roll to a substrate by forming a resist pattern on the printing roll and pressing the printing roll against the substrate.
Japanese Patent Laid-Open No. 2000-258921 JP 2004-46144 A

The thinning of the wafer 6 and the circuit formation using the photoresist film 56 as a mask are performed through several processes, but each process requires a large investment and cost. For example, several tens of millions of yen is required for the coating and developing apparatus alone, and several hundred million yen is required for the exposure apparatus. Furthermore, the processing time is several to several hours, respectively. In addition, various solvents are required for the processing. Examples include a solvent for removing contamination on the back surface of the wafer 51 when the photoresist material 52 is applied, an alkali solution or an organic solvent used for development, a gas or an organic solvent used for removing the photoresist film 56, and the like. As a result, the device is manufactured at a large expense for the apparatus and the medicine.
In addition, since spin coating used for coating the photoresist material 52 is rotated and dropped, the photoresist material 52 remaining on the surface of the wafer 51 is less than 10% of the total dropping amount. At the same time, the entire amount of the solvent that removes the photoresist material 52 that has entered the back surface is simultaneously discarded. In other words, most of the photoresist material 52 and the solvent are discarded, which is a wasteful process as a material, and it is a wasteful process. Absent.

In order to solve this, there is a method disclosed in Patent Document 1 or Patent Document 2 described above. However, in Patent Document 1, a print pattern of a photo paste on a substrate is formed by screen printing, and parallel through a mask. Exposure is performed by exposure to light, and the exposed portion is removed using a stripping solution to form a development pattern. The ink is a functional ink called a photo paste, for example, a Vogel made by DuPont or a regenate ink made by Neutake and a photosensitive resist added thereto. However, this is because, after printing and transferring the photo paste to the semiconductor substrate, exposure and development are performed using photolithography to make the inclined surface of the side surface a vertical surface. A complicated and expensive manufacturing apparatus is used, and the manufacturing cost increases.
In Patent Document 2, after preparing a cliché in which a concave groove is formed, the inside of the groove is filled with a resist. At this time, the surface of the cliche is pushed flat using a doctor blade so that only the inside of the groove is filled with the resist. Next, the printing roll is brought into contact with the surface of the cliché and rotated, whereby the resist filled in the grooves of the cliché is directly transferred to the surface of the printing roll. Thereafter, the roll is transferred to the substrate and rotated to form a resist pattern on the surface of the substrate. In such an offset printing method, pattern displacement, pattern fading, and partial pattern loss occur during transfer to the substrate, making it difficult to form a pattern with high accuracy.

  An object of the present invention is to solve the above-described problems and provide a low-cost manufacturing method of a semiconductor device capable of forming a highly accurate pattern using a printed resist film.

In order to achieve the above object, a step of placing an object to be printed under a mesh on which a predetermined pattern is formed, a step of dropping a printing resist material containing a particle component on the mesh, and a surface of the mesh A step of pressing a squeegee to bring the mesh into contact with the object to be printed, sweeping the squeegee and applying the printing resist material onto the object to be printed through the mesh in the pattern, and the applied printing resist Forming a patterned printing resist film on the object to be printed by heat-treating the material; selectively etching the object to be printed using the printing resist film as a mask; and the printing resist film with a removing liquid. And a step of removing the process.
Further, the printed object is a wafer, and the surface of the wafer is selectively etched in the etching step.

Further, the object to be printed is a wafer having an insulating film formed on a surface thereof, and after the step of selectively etching the insulating film in the etching step to form a diffusion mask and the removing step, And a step of ion-implanting impurities using the diffusion mask and heat-treating to form a diffusion region.
The printed object is a wafer having a conductive film formed on a surface thereof, and a manufacturing method including a step of selectively etching the conductive film in the etching step to form a wiring.
In the removing step, the printing resist film may be removed by discharging the removing liquid onto the rotating object to be printed.
Moreover, the said removal liquid is good to be discharged from a nozzle toward the location in which the said printing resist film of the said to-be-printed object was formed.

Moreover, the said removal process is good to immerse a part of said to-be-printed object to rotate in the said removal liquid, and to remove the said printing resist film.
Moreover, it is set as the manufacturing method including the process of making the particle | grain removal member contact the location in which the said printing resist film of the said to-be-printed object is formed after the said removal process start, and removing the said particle component.
The particle removing member may be vibrated.
Further, a soft sponge or brush may be used for the particle removing member.
The particle component may be carbon or silicon.
Further, it is preferable that the printing resist material containing the particle component has a thixotropy that becomes a liquid state when pressure is applied and becomes a solid state when pressure is removed.
Further, the removal liquid may be an organic solvent or an alkaline aqueous solution.

  The organic solvent may be water-insoluble.

In the present invention, by using a thixotropic printing resist material containing a particle component, a printing resist film with a high-precision pattern can be formed with a small number of steps using an inexpensive manufacturing apparatus, and the cost can be reduced. Can be achieved.
In addition, after removing the resin component of the printing resist film with the solvent, the particle removing member (soft sponge, brush, etc.) is applied to the rotating wafer while the solvent is continuously discharged onto the wafer covered with the rotating printing resist film. By pressing, the particle component remaining on the wafer can be removed.
Moreover, the particle component removal effect can be enhanced by pressing the particle removing member against the wafer while ultrasonic vibration is applied.

In addition, a wafer coated with a printing resist film is erected, the lower half of the wafer is immersed in a solvent, a particle removing member is pressed against a non-immersed part, and the wafer is rotated, so that the resin component of the printing resist film is Removal and particle components can be removed. The particle component removing effect can be enhanced by ultrasonically vibrating the particle removing member.
In addition, since the particle component can be removed, a patterned printing resist film can be used, and the amount of chemicals used such as a solvent is small with an inexpensive manufacturing apparatus, so that the cost can be reduced.
Moreover, by removing the particle component simultaneously with the resin component removal process of the printing resist film, the number of processes can be reduced and the cost can be reduced.
In addition, since a printing resist film can be applied, the types and amounts of chemicals such as a printing resist material and a solvent to be discarded can be reduced, and the influence on the environment can be reduced.

The embodiment of the present invention uses a thixotropic printing resist film containing about 10% carbon or silicon particle components, so that the pattern of the portion where the mesh mesh is exposed is accurately transferred to the wafer. Compared to the case of using a normal printing resist film (such as a printing paste film) that does not contain particle components, a high-precision printing resist film pattern can be formed on the wafer, and the printing resist film is removed. Sometimes it was possible to remove the particle component.
By applying thixotropy to the printing resist material, when force is applied with a squeegee, the printing resist material behaves like a liquid and passes through the mesh, but once the force is released after passing through the mesh, the shape is formed. It is possible to form a printed resist film patterned so as to be maintained, that is, behave like a solid, with high accuracy.

If the printing resist material is liquid without thixotropy, when the printing resist material passes through the mesh, stringing may not occur between the mesh and the substrate, and the shape cannot be maintained on the substrate, and the liquid and the substrate. The applied liquid gradually spreads due to the difference in interfacial tension of each of the above. Finally, the required coating range and film thickness cannot be formed, and a printed resist film patterned with high accuracy cannot be formed.
Specifically, this will be described in the next embodiment.

1A and 1B are configuration diagrams of a printing apparatus, in which FIG. 1A is a plan view of a main part, and FIG. 1B is a cross-sectional view of a main part cut along line XX in FIG.
In FIG. 1, a printing device 100 has a mesh 2 (mesh sheet) applied to a frame 1 with a certain tension applied, and an end thereof is attached to the frame 1, and an emulsion 3 is attached to the back surface of the mesh 2. Block the passage. The mesh 2 includes a portion of the mesh 4 that is not covered with the emulsion 3 in a donut shape and a portion of the mesh 5 that is covered with the emulsion 3. The donut-shaped mesh 2 in a portion not covered with the emulsion 3 becomes a window for coating a printing resist material on the outer peripheral portion of the wafer (not shown), and here, a donut-shaped window having a width of 5 mm was used.
The wire material composition of the mesh 2 is made of stainless steel, the wire diameter is 30 μm, and the opening ratio of the mesh 2 is 50%. Polyester may be used for the wire composition of the mesh 2.

2 to 6 are views showing the method of manufacturing the semiconductor device according to the first embodiment of the present invention, and are process drawings shown in order. FIG. 2 is a configuration diagram of the manufacturing process. FIG. 2A is a plan view of a main part showing a state where a printing resist material is applied with a printing tool, and FIG. 2B is a cross-sectional view taken along line XX in FIG. FIG. 2C is a cross-sectional view of the main part when the squeegee of FIG. 2B is swept. FIG. 3 is a manufacturing process configuration diagram. FIG. 3A is a plan view of the main part of the wafer after the printing resist material is applied, and FIG. 3B is a cross-sectional view taken along line XX in FIG. FIG. 4 to 6 are sectional views of the manufacturing process. These process diagrams are examples of a process for thinning a thick wafer, and are process charts for thickening the outer peripheral portion so that the thinned wafer does not break.
First, a printing resist material 9 containing a particle component is dropped on the front side of the mesh 2 of the printing apparatus 100 in FIG. A constant force is applied from above to the squeegee 8 with the printing resist material 9 placed on the fixed amount, and the squeegee 8 is pressed against the mesh 2. In this state, the squeegee 8 is swept and the printing resist material 9 is slid onto the mesh 2. At this time, the printing resist material 9 passes from the donut-shaped planar mesh 4 not covered with the emulsion 3, and the donut-shaped printing resist material 10 is transferred to the wafer 6. As described above, the printing resist material 9 is mixed with about 10% of particle components such as carbon and silicon, and has a thixotropy, so that the printing resist material 9 to which pressure is applied becomes liquid and easily passes through the mesh 4. And since the printing resist material 10 which passed has been solidified, it is solidified and becomes a donut-like pattern with high accuracy.

When the squeegee 8 is not pressed, the gap (gap) between the wafer 6 and the mesh 2 is set to about 1.6 mm. The squeegee 8 is pressed against the mesh 2 to bring the mesh 2 and the wafer 6 into contact with each other. A printing resist material 9 is applied on the wafer 6. The pressing pressure is set to 0.035 MPa (FIG. 2).
Next, in order to remove the solvent contained in the printing resist material 10, the printing resist material 10 is cured by placing it in an oven set at 100 ° C. for 10 minutes, and the doughnut-shaped printing resist film 11 is formed on the outer periphery of the wafer 6. It forms on a part (FIG. 3).
Next, in order to make the wafer 6 thinner, a portion of the wafer 6 that is not protected by the printed resist film 11 is placed in a container 13 containing a mixed liquid 14 of sulfuric acid, nitric acid, hydrofluoric acid, phosphoric acid, etc. set at 25 ° C. And the inside of the wafer 6 is thinned by etching to an etching depth T of about 70 μm from the surface. Of course, the back surface of the wafer 6 is covered with a protective film 12 such as a resist so as not to be etched. This completes the etching of the inside of the wafer 6 except for the outer peripheral portion of the donut shape covered with the printing resist film 11, and the step between the outer peripheral portion that is not etched and the etched inner portion is about 70 μm in etching depth T. Thus, the thickness of the etched portion of the wafer is about 70 μm thinner than before the etching (FIG. 4).

Next, the protective film 12 is removed, the wafer 6 is rotated at 500 r / min to 2000 r / min, and an organic solvent such as toluene 15 is sprayed from the discharge nozzle 15 by a printing resist film removing apparatus in which the discharge nozzle 15 is installed. Then, the printing resist film 11 covering the outer peripheral portion of the wafer 6 is dissolved. In addition to toluene, the organic solvent may be a chloromethane such as dichloromethane or trichloromethane, a hexane such as cyclohexane or n-hexane, a water-insoluble solvent such as xylene and benzene, or an alkaline aqueous solution (FIG. 5).
Next, the wafer 6 is rotated as it is at 2000 r / min, so that the toluene 16 is scattered and dried, and the series of processes is completed (FIG. 6).
Although the discharge nozzle 15 is fixedly installed near the outer periphery, the printed resist film 11 is similarly formed even if the discharge nozzle 15 is moved from the vicinity of the center of the wafer 6 toward the outer periphery to inject the toluene 16. Can be removed. Here, toluene 16 is used to remove the resin component of the printing resist film 11, but an alkaline aqueous solution may be used in addition to an organic solvent such as toluene 16.

Thus, by using the printing resist material 9 containing the particle component having thixotropy, the printing resist film 11 patterned with high precision can be formed on the wafer 6, and the wafer 6 is made into a high precision pattern. Can be sharpened.
Further, patterning can be performed with an inexpensive printing tool, and an expensive coating apparatus or exposure apparatus required when a conventional photoresist material is used is not necessary.
Further, compared to the case where a conventional photoresist material is used, a photolithography process is not required, so the number of processes is reduced, and further, the amount of printing resist material 9 and the amount of chemicals such as a solvent are reduced. Manufacturing costs can be greatly reduced.
In addition, the amount of the printed resist material 9 discarded is small, and the type and amount of chemicals such as a solvent are reduced, so that the influence on the environment can be reduced.

Further, after removing the printed resist film 11 by spraying toluene 16 while rotating the wafer 6, the particle component which does not dissolve in the toluene 16 mixed in the printed resist film 11 by spraying toluene 16 onto the rotated wafer 6 as it is. Also scatter and do not remain on the wafer 6.
However, the particle components contained in the printed resist film 11 may not be scattered by the sprayed toluene 16 and the particle molecules 18 may remain on the wafer 6 as shown in FIG. In particular, when the particle component is silicon, it tends to remain on the wafer 6. If this residual amount is added to the next step, the particle component 18 will contaminate the manufacturing apparatus, or will become a shielding mask at the time of impurity implantation (during ion implantation). It is not possible to drive in with sufficient accuracy.
An embodiment for removing the remaining particle component 18 will be described.

8 and 9 are views showing a method of manufacturing a semiconductor device according to the second embodiment of the present invention, and are sequential process drawings. 8A is a manufacturing process configuration diagram, FIG. 8A is a plan view of the main part of the wafer, FIG. 8B is a cross-sectional view of the main part taken along line XX of FIG. These are manufacturing process sectional drawing.
The difference from Example 1 is that the particle component 18 was removed using the particle removing member 19 after the resin component of the printing resist film 11 was removed. This is that the process of FIG. 8 which is a particle component removal process is added after the process of FIG. The process of FIG. 9 following FIG. 8 is the same as the process of FIG.
Following the process of FIG. 5, the particle component 18 of the printed resist film is removed by applying a particle removing member 19 to the outer peripheral portion of the wafer 6 while spraying toluene 16. The particle removing member 19 is a soft sponge made of a sponge-like low-form material made of polyvinyl formal resin. The size is set according to the removal range. Here, a size of 10 mm × 30 mm × thickness 5 mm was used. This type becomes soft when wet, and damage to the wafer 6 can be reduced. This particle removing member 19 was fixed to a support material of PTFE (tetrafluoroethylene resin: polytetrafluoroethylene) (13) so that it could be placed on the wafer 6 at an arbitrary timing. In advance, while rotating the wafer 6 at 500 r / min, toluene 16 is dropped for 30 seconds to dissolve the resin component of the printed resist film 11, and the toluene 16 is continuously discharged to remove sponge-like particles such as soft sponge. The member 19 is pressed against the outer peripheral portion of the surface of the wafer 6 to remove the remaining particle component 18. Thereafter, while the wafer 6 is rotated, the discharge of the toluene 16 and the pressing of the particle removing member 19 are stopped (FIG. 8).

Next, the wafer 6 is rotated as it is at 2000 r / min, so that the toluene 16 is scattered and dried, and a series of processes is completed (FIG. 9).
In removing the printed resist film 11, it is preferable to appropriately change the arrangement of the discharge nozzle 15 and the particle removing member 19 according to the volatility of the solvent such as toluene 16 and the rotational speed of the wafer 6. It is not limited to the positions described in the examples. Moreover, although the discharge nozzle 15 is installed in the vicinity of the outer periphery, the same result can be obtained even if the discharge nozzle 15 is moved from the vicinity of the center toward the outer periphery. In this embodiment, a sponge-like particle removing member 19 such as a soft sponge is used. However, when the outer peripheral portion of the wafer 6 is as thin as 100 μm or less, a brush made of polyester or the like may be used.
As described above, the spout-like particle removing member 19 is brought into contact with the wafer 6 while spraying the toluene 16 from the discharge nozzle 15 on the rotating wafer 6 and is attached to the corner of the step T of 70 μm. It can be completely removed by being scattered by sweeping the toluene 16 sprayed by the particle component 18 of the resist film and the particle removing member 19. Further, the particle removal member 19 is pressed against the outer peripheral portion of the wafer 6 while being subjected to ultrasonic vibration, whereby the effect of removing the particle component 18 can be further enhanced.

Thus, by removing the particle component 18, the printing resist material 9 containing the particle component can be used, and the printing resist film can be patterned at low cost by using an inexpensive printing device and a removing device with a particle removing member. That is, an expensive coating apparatus or exposure apparatus required when a conventional photoresist material is used is not necessary.
Further, compared to the case where a conventional photoresist material is used, a photolithography process is not required, so the number of processes is reduced, and further, the amount of printing resist material 9 and the amount of chemicals such as a solvent are reduced. Manufacturing costs can be greatly reduced.
In addition, the amount of the printed resist material 9 discarded is small, and the type and amount of chemicals such as a solvent are reduced, so that the influence on the environment can be reduced.

FIG. 10 is a diagram showing a method of manufacturing a semiconductor device according to the third embodiment of the present invention. The difference from Example 2 is that in the step of removing the printed resist film 11, the rotating wafer 6 is immersed in a tank of toluene 16 to remove the resin component, and after the removal of the resin component is finished, the particles The removal member 19 is pressed against the outer peripheral portion of the wafer 6 to remove the particle component. At this time, the particle removal member 19 is pressed against the wafer 6 while being subjected to ultrasonic vibration, whereby the particle component removal effect can be enhanced. In this case, the same effect as in the second embodiment can be obtained.
If half of the rotating wafer 6 is immersed in a toluene 16 bath, the printed resist film 11 near the center of the wafer can also be removed. When the printing resist film 11 is provided only on the outer peripheral portion of the wafer 6, the amount of toluene 16 to be used that can remove the printing resist film 11 can be reduced by immersing the portion.

11A and 11B are views showing a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention. FIG. 11A is a plan view of the principal part of the wafer, and FIG. FIG. 3C is a cross-sectional view of the B part of FIG.
The difference from the second embodiment is that the printed resist film 11 is not used as a mask for thinning the wafer 6 as in the first to third embodiments, but impurities are added to the wafer 11 as shown in FIG. The printed resist film 11 is used as a mask for forming the patterned oxide film 22 used for implantation, or the printed resist film 11 is used as a mask for forming the wiring 24 on the wafer 6 as shown in FIG. It is a point using. Incidentally, reference numeral 21 in the figure denotes a chip forming portion.
FIG. 12 shows a manufacturing method in the case where a printed resist film is used as a mask for forming a patterned oxide film. FIGS. It is.

An oxide film 22 is formed on the wafer 6, and a patterned printing resist film 11 containing a particle component is formed thereon, and the oxide film 22 is removed by etching using this printing resist film 11 as a mask (see FIG. )).
Next, toluene 16 is jetted from the discharge nozzle 15 onto the wafer 6, the discharge nozzle 15 is moved between the center and the outer periphery of the wafer 6, and the resin component of the printed resist film 11 on the rotating wafer 6 is removed. (FIG. (B)).
Next, while spraying toluene 16 from the discharge nozzle 15 onto the wafer 6, the sponge-like particle removing member 19 is pressed against the wafer 6 to remove the particle component 18. At this time, the particle removing member 19 is pressed against the wafer 6 while being ultrasonically vibrated, so that the effect of removing the particle component 18 can be enhanced ((c) in the figure).

Next, while rotating the wafer 6, the toluene 16 is spattered and the wafer 6 is dried ((d) in the figure).
Next, the diffusion region 23 of FIG. 11 is formed using the oxide film 22 on the wafer 6 as a mask.

BRIEF DESCRIPTION OF THE DRAWINGS It is a block diagram of a printing instrument, (a) is a principal part top view, (b) is principal part sectional drawing cut | disconnected by the XX line of (a). BRIEF DESCRIPTION OF THE DRAWINGS It is a manufacturing process block diagram which shows the manufacturing method of the semiconductor device of 1st Example of this invention, (a) is a principal part top view which shows a mode that a material is apply | coated to a printing resist with a printing instrument, (b) is (a). Sectional drawing of the principal part cut | disconnected by the XX line of (c) is principal part sectional drawing when sweeping the squeegee of (b) FIG. 2 is a manufacturing process configuration diagram illustrating the manufacturing method of the semiconductor device according to the first embodiment of the present invention, following FIG. 2, wherein (a) is a plan view of the main part of the wafer after the printing resist material is applied, and (b) is ( Sectional view of the principal part cut along line XX in a) FIG. 3 is a cross-sectional view of the manufacturing process showing the method of manufacturing the semiconductor device according to the first embodiment of the invention following FIG. 4 is a cross-sectional view of the manufacturing process showing the method of manufacturing the semiconductor device according to the first embodiment of the invention following FIG. FIG. 5 is a cross-sectional view of the manufacturing process showing the method of manufacturing the semiconductor device according to the first embodiment of the invention following FIG. Diagram of residual particle components adhering to the outer periphery of the wafer FIG. 6 is a manufacturing process configuration diagram showing a manufacturing method of a semiconductor device according to a second embodiment of the present invention, where (a) is a plan view of the main part of the wafer, and (b) is a cross-sectional view of the main part taken along line XX of (a). Figure FIG. 8 is a cross-sectional view of the manufacturing process showing the method for manufacturing the semiconductor device according to the second embodiment of the present invention, continued from FIG. The figure which shows the manufacturing method of the semiconductor device of 3rd Example of this invention. It is a figure which shows the manufacturing method of the semiconductor device of 4th Example of this invention, (a) The principal part top view of a wafer, (b) is A section sectional drawing of (a), (c) is (a). Section B cross section It is a manufacturing method when a printed resist film is used as a mask for forming a patterned oxide film, and (a) to (d) are main part manufacturing process sectional views shown in the order of processes. It is a figure which shows the process of thinning a wafer at the time of using a photoresist, (a) to (f) is process drawing shown to process order.

Explanation of symbols

1 Frame 2 Mesh 3 Emulsion 4 Mesh not covered with emulsion 5 Mesh covered with emulsion 6 Wafer 7 Peripheral part 8 Squeegee 9 Printing resist material containing particle components 10 Printing resist material containing particle components (pattern)
DESCRIPTION OF SYMBOLS 11 Print resist film containing particle component 12 Protective film 13 Container 14 Molar mixture 15 Discharge nozzle 16 Toluene 17 Step 18 Particle component 19 Particle removal member 20 Container 21 Chip formation location 22 Oxide film 23 Diffusion region 24 Wiring 100 Printing tool T Etching depth

Claims (14)

Placing a printed object under a mesh on which a predetermined pattern is formed;
Dropping a printing resist material containing a particle component on the mesh; and
Pressing the squeegee against the mesh surface to contact the mesh and the object to be printed, sweeping the squeegee and applying the printing resist material on the object to be printed through the mesh in the pattern;
Heat-treating the applied printing resist material to form a patterned printing resist film on the object to be printed;
Selectively etching the object to be printed using the printing resist film as a mask;
Removing the printed resist film with a removing liquid;
A method for manufacturing a semiconductor device, comprising: The printed object is a wafer,
The method of manufacturing a semiconductor device according to claim 1, wherein the surface of the wafer is selectively etched in the etching step. The printed object is a wafer having an insulating film formed on a surface thereof,
Selectively etching the insulating film in the etching step to form a diffusion mask;
After the removing step, a step of ion-implanting impurities using the diffusion mask and heat-treating to form a diffusion region;
The method of manufacturing a semiconductor device according to claim 1, comprising: The object to be printed is a wafer having a conductive film formed on a surface thereof,
2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming a wiring by selectively etching the conductive film in the etching step. 5. The method of manufacturing a semiconductor device according to claim 1, wherein, in the removing step, the printing resist film is removed by discharging the removing liquid onto the rotating object to be printed. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the removing liquid is discharged from a nozzle toward a portion of the object to be printed where the printing resist film is formed. 5. The semiconductor device according to claim 1, wherein in the removing step, the printing resist film is removed by immersing a part of the rotating printed object in the removing liquid. Production method. 8. The method according to claim 5, further comprising a step of removing the particle component by bringing a particle removing member into contact with a portion of the object to be printed on which the printing resist film is formed after the start of the removing step. A manufacturing method of a semiconductor device given in any 1 paragraph. The method for manufacturing a semiconductor device according to claim 8, wherein the particle removing member is vibrated. The method for manufacturing a semiconductor device according to claim 8, wherein a soft sponge or a brush is used for the particle removing member. The method for manufacturing a semiconductor device according to claim 1, wherein the particle component is carbon or silicon. The semiconductor device according to claim 1, wherein the printing resist material containing the particle component has a thixotropy that becomes a liquid state when pressure is applied and becomes a solid state when pressure is removed. Manufacturing method. The method for manufacturing a semiconductor device according to claim 1, wherein the removing liquid is an organic solvent or an alkaline aqueous solution. 14. The method of manufacturing a semiconductor device according to claim 13, wherein the organic solvent is water-insoluble.

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