JPS59232417A - Semiconductor wafer resist developing apparatus - Google Patents
Semiconductor wafer resist developing apparatusInfo
- Publication number
- JPS59232417A JPS59232417A JP10672883A JP10672883A JPS59232417A JP S59232417 A JPS59232417 A JP S59232417A JP 10672883 A JP10672883 A JP 10672883A JP 10672883 A JP10672883 A JP 10672883A JP S59232417 A JPS59232417 A JP S59232417A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- developer
- wafer
- center
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims description 37
- 238000005507 spraying Methods 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体製造工程にお−・てフォトレジストの・
ξターニングをする装置に係り、％にポジレジストの現
像等に用いられるレジスト現像装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to the use of photoresists in semiconductor manufacturing processes.
The present invention relates to an apparatus for ξ turning, and more particularly to a resist developing apparatus used for developing positive resist.
〔発明の技術的背景およびその問題点〕第１図乃至第３
図を参照して従うに装置を説明する。第１図は従来装置
の構成の４；（を要を説明する図である。半導体ウェー
ハ１はスピンチャック２に吸着保持され、スピンチャッ
ク２はスビンモーク３に連結されて一定方向に回転させ
られる。スピンチャック２の上方にはノズルホルダー４
に十Ｗわれだノズル５が設けられ、処理４９’ｔ ６に
収容された半導体ウェーハ１に薬液を矢印７の如くスプ
レーする。また、ノズル５には現像液供給部８かも現像
液温調部９ｆ：介して現像液が供給さＡ′【る。[Technical background of the invention and its problems] Figures 1 to 3
The apparatus will now be described with reference to the figures. FIG. 1 is a diagram illustrating the main points of the configuration of a conventional apparatus. A semiconductor wafer 1 is held by suction on a spin chuck 2, and the spin chuck 2 is connected to a spin chuck 3 and rotated in a fixed direction. Above the spin chuck 2 is a nozzle holder 4.
A 10W welt nozzle 5 is provided in the processing chamber 49't 6 to spray a chemical solution onto the semiconductor wafer 1 accommodated in the processing chamber 49't6 as shown by the arrow 7. Further, a developer is supplied to the nozzle 5 through a developer supply section 8 and a developer temperature control section 9f.
第２図は第１図の装置のノズル５伺近の詳細な図で、第
１図と同一要素は同一符号で示しである。FIG. 2 is a detailed view of the vicinity of the nozzle 5 of the apparatus of FIG. 1, in which the same elements as in FIG. 1 are designated by the same reference numerals.
薬液は位置の固定されたノズル５から矢印７の如（スプ
レーされ、半導体ウェーハ１はスピンチャック２上で回
転するため、図中の位置ａ 、 ｂ 、 ｃ 。The chemical solution is sprayed from a nozzle 5 at a fixed position in the direction indicated by the arrow 7, and since the semiconductor wafer 1 rotates on the spin chuck 2, it is sprayed at positions a, b, and c in the figure.
ｄによって薬液の帽や温度が異なることになる。The cap and temperature of the chemical solution will differ depending on d.
第３図は第１図および第２図に示す装Ｗイによって半導
体ウェーハ１にスプレーされる薬液の分布の・ξターン
を示す図で、第２図と同一要素は同一符号で示しである
。なお図中のａ、ｂ、ｃ、ｄは第２図の位置ａ、ｂ、ｃ
、ｄｌｃ対応しており、斜線は薬液のスプレーで同時に
カバーされる範囲を示している。第３図（ａ）に示すよ
うに半導体ウェーハ１の半径を覆うようなスプレーで現
像すると、半導体ウェーハ１は位置ａ′（ｉ７中心に回
転するのに対してノズル５は固定されているので、位（
Ｆｌ ｃのレジストの現像が他の位置に比べて遅れ、現
像ムラなどが生じろ。なぜならば、薬液の温度はスプレ
ーの中心部（位ｆＫ：ｂ）が高くなり、周辺部（位置Ｈ
ａ。FIG. 3 is a diagram showing .xi. turns of the distribution of the chemical solution sprayed onto the semiconductor wafer 1 by the apparatus shown in FIGS. 1 and 2, and the same elements as in FIG. 2 are indicated by the same reference numerals. Note that a, b, c, and d in the figure correspond to positions a, b, and c in Figure 2.
, DLC, and the diagonal lines indicate the range that is simultaneously covered by the chemical spray. When the semiconductor wafer 1 is developed with a spray that covers the radius as shown in FIG. Place (
The development of the Fl c resist will be delayed compared to other positions, resulting in uneven development. This is because the temperature of the chemical solution is higher at the center of the spray (position fK:b) and at the periphery (position H).
a.
Ｃ）が低くなる。また、茶液の計は移動速度の最も低い
ウェーハの中心部（位１７３： ａ）が最も多（なり、
ウェーハの周辺部（位置Ｃ）が最も少なくなるので、半
導体ウェーハ１の周辺部の現像が他の部分より遅れるか
らである。C) becomes lower. In addition, the tea liquid meter shows that the center of the wafer (position 173: a), where the moving speed is the lowest, is the most
This is because the peripheral portion of the semiconductor wafer 1 (position C) has the least amount, so development of the peripheral portion of the semiconductor wafer 1 is delayed compared to other portions.
第３図（ｂ）に示すように半導体ウェーハ１のＶ］径を
覆うようなスプレーでレジストを現像した」３合にも、
ウェーハの周辺部の現ｆ＆がｊ摩れて現像ムラが生じる
。なぜならば、薬液の温度はスプレーの中心部（位置ａ
）が最も高（なり、薬液の啄トは半導体ウェーハ１の中
心部（位ＩＦ’ｉ ａ ）が最も多くなるからである。As shown in FIG. 3(b), the resist was developed with a spray that covered the V] diameter of the semiconductor wafer 1.
The development f& at the periphery of the wafer is rubbed, causing uneven development. This is because the temperature of the chemical solution is at the center of the spray (position a).
) is the highest (and the amount of chemical solution is greatest at the center (position IF'ia) of the semiconductor wafer 1).
そして、上記の欠点はウエーハザイズが大ぎくなるほど
顕著になる。The above drawbacks become more noticeable as the wafer size increases.
本発明は上記の従来技術の欠点に鑑みてなされたもので
、半導体ウェーハ上の位置によってレジストの現像が速
くなったり遅くなったりして、現像ムラを牛じることの
ない半導体ウェーハのレジスト現像装部を提供すること
全目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and is capable of developing a resist on a semiconductor wafer without having to deal with uneven development due to the development of the resist becoming faster or slower depending on the position on the semiconductor wafer. The entire purpose is to provide the equipment.
上記の目的を実現するため本発明は、スプレーされる現
像液の温度を吐出部（ノズル）Ｋお（・て一定値に調節
すると共に、吐出部を、駆動させる手段を設け、２１籾
、・体ウエーノ・の中心部をスプレーしているときは速
＜１１１出部を移１ＴＪＩ）させ、周辺部をスプレーし
ているときは遅く吐出ｆ？ｌｌ＋を移匍Ｊさせる半２Ｊ
り体ウェーハのレジスト、！Ｊ１．像装置を札を供する
ものである。In order to achieve the above object, the present invention adjusts the temperature of the developer to be sprayed to a constant value at the discharge part (nozzle) K and also provides means for driving the discharge part. When spraying the center of the body, the speed is <111 (move 1TJI), and when spraying the periphery, the discharge is slow. Half 2J to transfer ll+
Body wafer resist! J1. The image device serves as a tag.
〔発明のり、施Ｖ１！〕 以］、第４図ケ行照して本発明の一実施例を説明する。[Invention glue, application V1! ] Hereinafter, one embodiment of the present invention will be described with reference to FIG.
））、４図は同ν昼ｆ４例の棺ト成のｔｉ！’、ｆ：
９ｉを説明する図で、）貼１図乃至第３図と同一（素は
同一符号で示（２てキ）る。スピンナヤツク２に吸オｆ
固定された仝Ｉ（洒１本ウェーハ１． ＋ｆｌ一定ジ・
１１度で回転する。半導体ウェーハ１の」一方に設けも
ねた４；１≦液全スプレーするための現１ｈξ液叶１−
１．ｔ ”ｊｆｌｓ １４．１は、ノズルＩＫ Ｈ＋１
Ｈ部によって矢日月１の方向に往復運１ｆ（ＩＩさセら
）れる。ノズルｊｑ・、小！ｊ ｆＫｆζは現１４．沿
吐出部１０を保持ずろためのアーム］２と、アーム］２
に［＾１定されカムフォロア１３全取り伺けたスラ・ｆ
ダ１４と、カム（ス゛着ｆ＋￥とから成り立っている。)), Figure 4 shows the coffin formation of the same vday f4 case! ', f:
9i is the same as in Figures 1 to 3 (Elements are indicated by the same reference numerals (2).
A fixed wafer 1.
Rotates at 11 degrees. A liquid plate 1 is provided on one side of the semiconductor wafer 1 for spraying all of the liquid.
1. t”jfls 14.1 is nozzle IK H+1
It is reciprocated 1f (II reversed) in the direction of arrow 1 by the H part. Nozzle jq, small! j fKfζ is currently 14. arm] 2 for holding and shifting the discharge section 10; and arm] 2.
[^1 Sura-f that was fixed and all 13 cam followers were taken]
It consists of a cam 14 and a cam (swift f+¥).
そして、カム４；：：’ｔセりはカムフォロアＪ３を受
は入れるためのイトし已・のｉ（□Ｔ、 Ｉ−５を設け
たカム１６と、スライダ１４を往復５１゛乙動させる２
本のカイトシャフト１７ａ、１７ｂから成り立っている
。なお、カム１６は図示しないモータにより矢印１８の
方向に回転させることができる。Then, the cam 4 is set to receive the cam follower J3, and the cam 16 provided with the cam follower J3 (□T, I-5) and the slider 14 are moved back and forth by 51 degrees.
It consists of book kite shafts 17a and 17b. Note that the cam 16 can be rotated in the direction of an arrow 18 by a motor (not shown).
加圧タンク１９に入れられた現像液２０は恒温槽２１内
の熱交換・ξイブ２２を通って一定渦度まで加熱され、
開閉パルプ乙およびアーム１２ｉ介して３Ｊｔ像液吐ｌ
ｊ部１０に与えられる。ここで、盃１調器２４は図示し
ない検知器により検出した現像液の温度（現像液吐出部
における温度も含む）Ｋもとづいて、スプレーされる現
像液の温度が一様ｌ、（湿度にｌｊるよう恒７１憚槽ｚ
１における現像液の温度を調節する。The developer 20 placed in the pressurized tank 19 is heated to a constant vorticity through a heat exchanger/ξ Eve 22 in a constant temperature tank 21.
3Jt image liquid discharge l via opening/closing pulp B and arm 12i
j section 10. Here, the cup 1 adjuster 24 determines that the temperature of the developer to be sprayed is uniform l, (humidity lj Ruyo Tsune 71 tank z
Adjust the temperature of the developer in step 1.
次に、第４図に示す装置の動作を説明する。図示しない
モータによりカム１６ヲ矢印１８の方向に回転させると
、溝１５の動きにつれてカムフォロア１：３がカイトシ
ャフト１７ａ、１７ｂに沿って往復運ｉＱ１する。Next, the operation of the apparatus shown in FIG. 4 will be explained. When the cam 16 is rotated in the direction of the arrow 18 by a motor (not shown), the cam follower 1:3 moves back and forth iQ1 along the kite shafts 17a and 17b as the groove 15 moves.
そのため、スライダ１４はカイトシャフト１７ａ、１７
ｂ」二ヲ往復運動するので、す１．像液吐出部１０は半
導体ウェーハ１の上方を往復運動することになる。１つ
の方法としてこのとき、半導体ウェーハ１の直径と溝１
５の直径をほぼ等しく設定すると、現像液…１出部は半
・、１（−ウエーノ刈の中心ｆ１１１にあるときはｉｊ
！ｊ＜移１１１１ Ｕ、箇辺部にあろときはｉ’ｉ４
（移動することになる。、従って、３１′幅付ウェーハ
１の中心部と周辺部の１Ｊｌｊ、像１１≧二〇：、１を
等しくすることができる。Therefore, the slider 14 is attached to the kite shafts 17a, 17.
b) 2. Since it moves back and forth, 1. The image liquid discharge section 10 reciprocates above the semiconductor wafer 1. As one method, at this time, the diameter of the semiconductor wafer 1 and the groove 1
If the diameters of 5 are set almost equal, the developer...1 outlet will be half, 1 (- ij when it is at the center f111 of waeno cutting)
! j<transition 1111 U, when it is in the part, i'i4
(It will move. Therefore, 1Jlj, image 11≧20:, 1 can be made equal in the central part and the peripheral part of the wafer 1 with a width of 31'.
また、温調器２１等１ｃよって現像液の温度を調整する
ことにより、」′・、すにウェーハ１におけるＪＪ＝１
像液の温度を−Ｊｉｌｅ肖″つことかできる。In addition, by adjusting the temperature of the developer using the temperature regulator 21 etc. 1c, JJ=1 on the wafer 1.
The temperature of the image solution can also be measured.
上記の如（木兄り）］によれば、スプレーされる現像液
の湿度を吐出部にオれ・て一定値に調節すると共に、半
導体ウェーハの直仔方向に吐出部ヲ、Ｉヅノ、動さぜる
手段を設け、半導体ウェーハの中心部をスプレーしてい
るときの移・ｊｌ、速度よりも１月辺部をスプレーして
いるときの方がおそくなるようにしたので、スプレーさ
れる現像液の懸＋Ｃとトを金半２ｊＪ一体ウエーハの周
ジノ部、中心γり１（等において一５Ｊ：にすることが
でき、現俳ムラ全生じさげろことのない半導体ウェーハ
のレジスト現イ５：装）ｉ、ｊ、ｌ−をイＳることかで
きる。また１、ｊｔ７． ｉ夕液の占ｊｐ］看：ｉｉ＋
、し４７すイ）ことによって現像速度全速めたり、吐出
部の移動速度全Ｚ化させることによって現像精度金高め
たりすることができる。さらに、吐出部の移動距離を変
えることによって、異なるサイズの半導体ウェーハの現
像に対応することもできる。According to the method described above (Kienori), the humidity of the developer to be sprayed is adjusted to a constant value at the discharge part, and the discharge part is moved directly in the direction of the semiconductor wafer. By providing a means to stir the semiconductor wafer, the speed of movement is slower when spraying the edges of the semiconductor wafer than when spraying the center of the semiconductor wafer. The liquid suspension + C and T can be made 15 J: at the peripheral part of the gold semi-solid wafer, the center γ 1 (etc.), and the resist of the semiconductor wafer without causing any unevenness. ：I can write i, j, l-. Also 1, jt7. I Yuki's fortune telling jp] View: ii+
, 47), the developing speed can be increased completely, and the developing accuracy can be increased by increasing the moving speed of the discharge section. Furthermore, by changing the moving distance of the discharge section, it is possible to develop semiconductor wafers of different sizes.
第１図は従来装置の構成の概要を説明する図、第２区ｌ
は第１図の装置の一部の拡大図、２１１３図は第１図お
よび第２図に示す装置による現像方法全説明するし１、
第４図は本発明の一実Ｊイ１例の十Ｅｆ成の４ξτ安を
薄明する図である。
１・・・半導体ウェーハ、２・・・スピンナヤツク、３
・・・スピンモータ、４・・・ノズルホルダー、５・・
・ノズル、６・・・処理槽、ｌｔｌ・・・現像７１ダ叶
Ｈ旨１；、１２・・・アーム、１３・・・カムフォロア
、１４・・・スライダ、１５・・・ｊＲ。
Ｊ６・・・カム、１７ａ、１７ｂ・・・カムシャフト、
１９・・・加圧タンク、２０・・・現像液、２】・・・
恒温４′ｊｊｔ、２２・・・熱父換・々イブ、２：、（
・・・開閉パルプ。
５１ 図
乾４ 履
７３
も ２ 図
５３ 図
（ａ） （ｂ）Figure 1 is a diagram explaining the outline of the configuration of the conventional device, Section 2
1 is an enlarged view of a part of the apparatus shown in FIG. 1, and FIG. 2113 is a full explanation of the developing method using the apparatus shown in FIGS.
FIG. 4 is a diagram illustrating the 4ξτ value of 10 Ef components in one example of the present invention. 1... Semiconductor wafer, 2... Spinner yak, 3
... Spin motor, 4... Nozzle holder, 5...
- Nozzle, 6... Processing tank, ltl... Development 71, 12... Arm, 13... Cam follower, 14... Slider, 15... jR. J6...Cam, 17a, 17b...Camshaft,
19... Pressurized tank, 20... Developer, 2]...
Constant temperature 4'jjt, 22... Heat exchange, 2:, (
...Opening and closing pulp. 51 Figure 53 (a) (b)
Claims (1)
共に半導体ウェーハを回転させる回転駆動部と、半導体
ウェーハに現像液をスプレーする半導体ウェーハ面に対
して平行移動自在な現像液吐出部と、この現像液吐出部
が半導体ウエーノ・の中心部をスプレーしているときは
速く周辺部をスプレーしているときは遅くこの現像液吐
出部を移動させるノズル駆動部と、スプレーされる現像
液が前記現像液吐出部において一定温度になるよう温度
を調節する温調部とを備える半導体ウェーハのレジスト
現像装置６．。A support section that suctions and fixes a semiconductor wafer, a rotation drive section that rotates the semiconductor wafer together with the support section, a developer discharge section that can freely move parallel to the surface of the semiconductor wafer that sprays a developer onto the semiconductor wafer, and a developer discharging section that sprays a developer onto the semiconductor wafer. A nozzle drive unit that moves the developer discharge unit faster when spraying the center of the semiconductor wafer and slower when spraying the periphery, and a nozzle drive unit that moves the developer discharge unit faster when spraying the center of the semiconductor wafer and slower when spraying the periphery. 6. A resist developing device for semiconductor wafers, comprising a temperature control section that adjusts the temperature to a constant temperature in the discharge section.6. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10672883A JPS59232417A (en) | 1983-06-16 | 1983-06-16 | Semiconductor wafer resist developing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10672883A JPS59232417A (en) | 1983-06-16 | 1983-06-16 | Semiconductor wafer resist developing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59232417A true JPS59232417A (en) | 1984-12-27 |
| JPH04379B2 JPH04379B2 (en) | 1992-01-07 |
Family
ID=14440992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10672883A Granted JPS59232417A (en) | 1983-06-16 | 1983-06-16 | Semiconductor wafer resist developing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232417A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61160930A (en) * | 1985-01-09 | 1986-07-21 | Dainippon Screen Mfg Co Ltd | Method of supplying surface treatment solution for substrate |
| JPS61140355U (en) * | 1985-02-20 | 1986-08-30 | ||
| JPH01302819A (en) * | 1988-05-31 | 1989-12-06 | Fujitsu Ltd | Spray development device |
| JPH0312918A (en) * | 1989-06-12 | 1991-01-21 | Fujitsu Ltd | Spray development method |
| JPH0390431U (en) * | 1989-12-28 | 1991-09-13 | ||
| US5416047A (en) * | 1990-09-07 | 1995-05-16 | Tokyo Electron Limited | Method for applying process solution to substrates |
-
1983
- 1983-06-16 JP JP10672883A patent/JPS59232417A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61160930A (en) * | 1985-01-09 | 1986-07-21 | Dainippon Screen Mfg Co Ltd | Method of supplying surface treatment solution for substrate |
| JPH0237690B2 (en) * | 1985-01-09 | 1990-08-27 | Dainippon Screen Mfg | |
| JPS61140355U (en) * | 1985-02-20 | 1986-08-30 | ||
| JPH0532848Y2 (en) * | 1985-02-20 | 1993-08-23 | ||
| JPH01302819A (en) * | 1988-05-31 | 1989-12-06 | Fujitsu Ltd | Spray development device |
| JPH0312918A (en) * | 1989-06-12 | 1991-01-21 | Fujitsu Ltd | Spray development method |
| JPH0390431U (en) * | 1989-12-28 | 1991-09-13 | ||
| US5416047A (en) * | 1990-09-07 | 1995-05-16 | Tokyo Electron Limited | Method for applying process solution to substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04379B2 (en) | 1992-01-07 |
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