JPH02213120A - Resist-pattern forming method - Google Patents
Resist-pattern forming methodInfo
- Publication number
- JPH02213120A JPH02213120A JP3346789A JP3346789A JPH02213120A JP H02213120 A JPH02213120 A JP H02213120A JP 3346789 A JP3346789 A JP 3346789A JP 3346789 A JP3346789 A JP 3346789A JP H02213120 A JPH02213120 A JP H02213120A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- developer
- container
- resist film
- rinsing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 239000012487 rinsing solution Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 238000011161 development Methods 0.000 abstract description 25
- 239000007788 liquid Substances 0.000 abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000013019 agitation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェハ上にレジストパターンを形成する方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming a resist pattern on a wafer.
ICの歩留りを向上させるためには、現像がつエバの面
全体に亘って均・−に行われるように1゛ることが重要
である。In order to improve the yield of ICs, it is important that the development be done evenly over the entire surface of the evaporator.
〔従来の技術)
第9図(A)、(B)は従来例を示す。これはパドル現
像方式と呼ばれるものであり、同図(A)は現象中の状
態を示し、同図(B)は現像停止の状態を示す。[Prior Art] FIGS. 9(A) and 9(B) show a conventional example. This is called a paddle development method, and FIG. 11A shows a state in which the phenomenon is occurring, and FIG. 2B shows a state in which development is stopped.
つIハ1をその露光処理済のレジスト膜2を上向きとし
てチャック3に固定し、つ1ハ1の上方のノズル4より
現像液を滴下し、レジスト膜2上に表面張力により現像
液のII5を形成する。これにより、現像が開始される
。The resist film 2 that has been exposed to light is fixed on the chuck 3 with the exposed resist film 2 facing upward, and a developer is dripped from the nozzle 4 above the resist film 2. form. As a result, development is started.
数10秒経過後、今度はノズル7より現像ストッパのリ
ンス液を滴下し、同図(B)に示すように現像液を除去
してリンス液で置換し、ウェハ表面をクリーニングする
ことによってレジストパターンを形成している。After several tens of seconds have passed, the rinsing liquid for the development stopper is dripped from the nozzle 7, and as shown in FIG. is formed.
(発明が解決しようとする課題)
現像液及びリンス液がウェハ全面に早く広がるように、
ウェハ1を微速で回転させたり、ノズル4を7ffi動
させたりしているが、どうしても液の廻りの遅いところ
ができてくる。(Problem to be solved by the invention) To spread the developer and rinse solution quickly over the entire surface of the wafer.
Although the wafer 1 is rotated at a very low speed and the nozzle 4 is moved by 7ffi, there are inevitably spots where the liquid moves slowly.
このため、現像液の場合には、ウェハ上の各部位で現像
反応の開始に時間差が生ずる。For this reason, in the case of a developer, there is a time difference in the start of the development reaction at each location on the wafer.
リンス液の場合には、リンス液へのffi?の遅れによ
り、現像反応の停止に時間差が生ずる。In the case of rinsing liquid, add ffi? to the rinsing liquid. This delay causes a time difference in stopping the development reaction.
このFtIWA差に起因して、ウェハ面内において現像
分布がばらつき精度の良いレジストパターンを形成する
ことができない。Due to this FtIWA difference, the development distribution varies within the wafer surface, making it impossible to form a highly accurate resist pattern.
本発明は、ウェハ面内の現像分布を改善することによっ
てレジストパターンを精度良く形成することを目的とす
る。An object of the present invention is to form a resist pattern with high precision by improving the development distribution within the wafer surface.
本発明は、第1図に示すように、ウェハをそのレジスト
膜の面を下に向けて保持し、レジスト膜を容器内の現像
液に浸ける工程10と、その後、上記容器内にリンス液
を供給して上記現像液をリンス液でN換する工程11と
よりなる。As shown in FIG. 1, the present invention includes a step 10 in which a wafer is held with its resist film facing downward and the resist film is immersed in a developer solution in a container, and then a rinsing solution is poured into the container. This consists of a step 11 of supplying the developer and converting the developer into N with a rinse solution.
現級液浸は工程10により、ウェハのレジスト膜はウェ
ハ全面に亘って同時に現像液に接することになり、現像
がウェハの全面に頁って時間差無く同時に開始される。In step 10 of the current immersion process, the resist film on the wafer comes into contact with the developer over the entire surface of the wafer at the same time, and development is started on the entire surface of the wafer at the same time without any time difference.
リンス液a換工程11により、容器内の現像液は素早く
リンス液に置換され、ウェハの全面に亘って略同時に現
像が停止される。In the rinsing liquid a replacement step 11, the developer in the container is quickly replaced with the rinsing liquid, and development is stopped almost simultaneously over the entire surface of the wafer.
第2図は本発明のレジストパターン形成方法の一実施例
を示し、第3図乃至第8図は本発明のレジストパターン
形成方法に使用する゛r11体レジスしパターン形成装
置の動作を丞す。第3図に示すように、半導体レジスト
パターン形成装2¥20は、チャック機構21と容器機
構22とよりなる。FIG. 2 shows an embodiment of the resist pattern forming method of the present invention, and FIGS. 3 to 8 show the operation of the resist pattern forming apparatus used in the resist pattern forming method of the present invention. As shown in FIG. 3, the semiconductor resist pattern forming apparatus 220 includes a chuck mechanism 21 and a container mechanism 22. As shown in FIG.
中 現像液浸は工程10について:
露光処理されたポジレジスト膜23含有するウェハ24
は、第3図中矢印へで示すように搬送されてきて、−旦
チャック25上に置かれる。チャック25はウェハ24
を吸着固定する(第2図中工程S+)。以下[8!は全
で第2図に示す。Medium Immersion in developer liquid regarding step 10: Wafer 24 containing exposed positive resist film 23
is conveyed as shown by the arrow in FIG. 3 and placed on the chuck 25. The chuck 25 holds the wafer 24
is fixed by suction (Step S+ in Fig. 2). Below [8! are shown in Figure 2.
次にチャック機W421が軸Xを中心に180度回動じ
、つIハク4を反転させる(工程S2)。第4図はこの
ときの状態を示し、ウェハ24はレジスト膜23の面2
6を下向きに水平に保持(−る。Next, the chuck machine W421 rotates 180 degrees around the axis X and reverses the chuck 4 (step S2). FIG. 4 shows the state at this time, in which the wafer 24 is placed on the surface 2 of the resist film 23.
Hold 6 horizontally (-) facing downward.
容器27は皿形状のものであり、上面の四部28は浅く
、つIハク4に対応する大きさである。The container 27 is dish-shaped, and the four parts 28 on the top surface are shallow and have a size corresponding to the diameter of the container 4.
ここに現像液29が貯溜しである。現像液29の置は1
00cc程度と少ない。The developer 29 is stored here. The position of the developer 29 is 1
It is small at around 00cc.
シリンダ30が作動され、容器27が第5図に示すよう
に上昇される(工程33)。The cylinder 30 is actuated and the container 27 is raised as shown in FIG. 5 (step 33).
これにより、現像液29がウェハ24のレジスト膜23
の全面に同時に接触する。ウェハ24側からみると、レ
ジストg!23の全面が同時に現像液29に浸かる。As a result, the developer 29 is applied to the resist film 23 of the wafer 24.
contact all surfaces at the same time. When viewed from the wafer 24 side, resist G! The entire surface of 23 is immersed in the developer 29 at the same time.
これによりレジスト膜23の現像がつτハ全面に0って
同時に開始される。As a result, the development of the resist film 23 starts simultaneously with τ being 0 on the entire surface.
現像は30〜60秒問行なう。Development is carried out for 30 to 60 seconds.
また現像がつIハ仝面に円って均一に運行するように以
下の動作が行われる。Further, the following operation is performed so that the developing image moves uniformly in a circle over the entire surface.
■ モータ31により、スピンドル32をベルト駆動し
て、つ1ハ24を約1Orpm+でゆっくりと回転させ
る。これにより現像液が攪拌され、処即中に濃度差が生
ずるのが防止される。(2) The spindle 32 is belt-driven by the motor 31, and the shaft 24 is slowly rotated at approximately 1 Orpm+. This agitates the developer and prevents concentration differences from occurring during processing.
■ 容器27の内部を温調水を矢印Bで示(ように流し
、現像液29の液温を所定の温度に調整する。(2) Flow temperature-controlled water inside the container 27 as shown by arrow B to adjust the temperature of the developer 29 to a predetermined temperature.
■ また、カバー33の周囲の孔34により空気を矢印
35で示すように吹き出して、現像液29がウェハ24
の上面に廻り込むのを防ぐ。■ Also, air is blown out as shown by the arrow 35 through the holes 34 around the cover 33, and the developer 29 is applied to the wafer 24.
Prevent it from going around the top surface.
つ1ハ24の上面に廻り込んだ現像液は汚れの原因とな
るからである。This is because the developer that has entered the upper surface of the 1c 24 causes stains.
■ リンス液M換工程11について: 現像開始から30〜60秒経過した後、上記■。■ Regarding rinse liquid M exchange step 11: After 30 to 60 seconds have elapsed from the start of development, proceed to step (2) above.
■、■の動作を継続させたまま、第6図に示すようにか
36を操作してリンス液を矢印Cで示すように容器27
の凹部28の底面の中央Pから凹部28内に供給する(
工程84 )。While continuing the operations ① and ②, as shown in Fig. 6, operate the rinsing liquid into the container 27 as shown by the arrow C.
is supplied into the recess 28 from the center P of the bottom of the recess 28 (
Step 84).
リンス液の供給により、現像液は矢印39で示すように
容器27より溢れ、凹部28内はリンス液40により置
換され、ウェハ24のレジスト膜23の而26にはリン
ス液4oが接し、現像が停止する。By supplying the rinsing liquid, the developer overflows from the container 27 as shown by an arrow 39, the inside of the recess 28 is replaced by the rinsing liquid 40, and the rinsing liquid 4o comes into contact with the resist film 23 of the wafer 24, and the development is completed. Stop.
ここで、凹部28の容積に100c c程度と小さく、
−1リンス液40は毎秒当り数100c cの流分で供
給され、しかも、供給は凹部28の底面中央Pから行わ
れるため、現像液からリンス液への置換は瞬時に行われ
る。Here, the volume of the recess 28 is as small as about 100cc,
The -1 rinsing liquid 40 is supplied at a flow rate of several hundred cc per second, and since the supply is performed from the center P of the bottom surface of the recess 28, the replacement of the developer with the rinsing liquid is instantaneous.
これによりウェハ24のレジスト膜23にはその全面に
亘ってリンス液40が略同時に接することになり、現像
はウェハ全面に亘って略同時に停止し、レジストパター
ンが形成される。As a result, the entire surface of the resist film 23 of the wafer 24 comes into contact with the rinsing liquid 40 substantially simultaneously, and development is stopped substantially simultaneously over the entire surface of the wafer, forming a resist pattern.
上記のように、現像はウェハ全面に口って同時に開始さ
れ、且つ略同時に停止されているため、現像はウェハ全
面に亘って均一に行われ、ウェハ面内の現像のバラツキ
の程度(例えば同幅のラインを現像したときのつIハ各
位置でのライン幅寸法のバラツキの程度)は第9図に示
す従来の方法に比べて約1/2となり、精度の良好なレ
ジストパターンが形成され、ICの歩留が向上する。As mentioned above, development is started and stopped at almost the same time on the entire wafer surface, so development is uniformly performed over the entire wafer surface, and the degree of variation in development within the wafer surface (for example, the same When developing a line of the same width, the degree of variation in the line width dimension at each position is approximately 1/2 that of the conventional method shown in Fig. 9, and a resist pattern with good precision is formed. , the yield of IC is improved.
現像停止後、第7図に示すように、容器27を下降させ
ると共に弁36を通してリンス液40を排水する。After the development is stopped, as shown in FIG. 7, the container 27 is lowered and the rinse liquid 40 is drained through the valve 36.
続いて、ウェハ34を約3.OOOrpmの高速度で回
転させ、ウェハ24を乾燥する。Subsequently, the wafer 34 is heated approximately 3. The wafer 24 is dried by rotating at a high speed of OOO rpm.
この後、第8図に示すように、チャック機構21を18
0度回動させ、ウェハ24を搬送Q置に戻す。After this, as shown in FIG.
The wafer 24 is rotated 0 degrees and returned to the transport position Q.
その後、空気を吹き出すドライヤ41を容器27の上面
を走査するように矢印07−1向に移動させ、容器27
を乾燥させる。この乾燥の時にリンス液の飛沫が飛び散
るけれども、ウェハ24は搬送位置に位置しているため
、飛沫はつてハ24には付着しない。Thereafter, the dryer 41 that blows out air is moved in the direction of arrow 07-1 so as to scan the top surface of the container 27, and
Dry. Although droplets of the rinsing liquid scatter during this drying, since the wafer 24 is located at the transfer position, the droplets do not adhere to the wafer 24.
(発明の効果)
以上説明した様に、本発明によれば、ウェハ全面に亘っ
て現像が同時に開始され、Hつウェハ全面に■って現像
が略同時に停止されるため、ウェハ面内の現像のばらつ
きを従来に比べて小さく押えて、現像の均一化を図るこ
とが出来、粘度の良いレジストパターンの形成が可能で
ICの歩留りを向上させることが出来る。(Effects of the Invention) As explained above, according to the present invention, development is started simultaneously over the entire wafer surface and stopped almost simultaneously over the entire wafer surface. It is possible to suppress the variation in color to a smaller value than in the past, to achieve uniform development, to form a resist pattern with good viscosity, and to improve the yield of ICs.
第1図は本発明のレジストパターン形成方法の原理図、
第2図は本発明のレジストパターン形成方法の一実施例
を
を示す図、
第3図は本発明のレジストパターン形成方法に適用しつ
る装置のウェハ吸着工程時の状態を示す図、
第4図はウェハ反転時の状態を示す図、第5図は容器上
背時(現像開始時)の状態を示す図、
第6図はリンス液供給aJ(現像停止時)を示す図、
第7図は現FIi停止後の状態を示す図、の状態
第8図はウェハを搬送位置へ戻す状態を示す図、第9図
は従来例を示す図である。
図において、
20はレジストパターン形成装置、
21+よチャック機構、
22は容器機構、
23は露光処理されたポジレジスト躾、24はウェハ、
25はチャック、
27は容器、
28は浅い四部、
29は現像液、
30はシリンダ、
31はモータ、
33はカバー
35は空気の吹き出しを示す矢印、
36は弁、
37は排水受け、
39は溢流を示す矢印、
40はリンス液、
41はドライヤ
を示す。FIG. 1 is a diagram showing the principle of the resist pattern forming method of the present invention, FIG. 2 is a diagram showing an embodiment of the resist pattern forming method of the present invention, and FIG. 3 is a diagram showing an example of the resist pattern forming method of the present invention. Figure 4 shows the state of the device during the wafer adsorption process, Figure 4 shows the state when the wafer is turned over, Figure 5 shows the state when the container is on its back (at the start of development), Figure 6 shows the condition of the rinsing liquid. Figure 7 shows the state after the current FIi is stopped; Figure 8 shows the state in which the wafer is returned to the transport position; Figure 9 shows the conventional example. It is a diagram. In the figure, 20 is a resist pattern forming device, 21+ is a chuck mechanism, 22 is a container mechanism, 23 is an exposed positive resist resistor, 24 is a wafer, 25 is a chuck, 27 is a container, 28 is a shallow four part, 29 is a developer 30 is a cylinder, 31 is a motor, 33 is a cover 35 is an arrow indicating air blowout, 36 is a valve, 37 is a drainage receiver, 39 is an arrow indicating overflow, 40 is a rinsing liquid, and 41 is a dryer.
Claims (1)
(23)のパターン形成を行なう方法において、 上記ウェハをそのレジスト膜の面を下に向けて保持し、
該レジスト膜を容器(27)内の現像液(29)に浸け
る工程(10)と、 その後、上記容器内にリンス液(40)を供給して上記
現像液をリンス液で置換する工程(11)とよりなるこ
とを特徴とするレジストパターン形成方法。[Claims] A method for patterning a resist film (23) coated on a wafer (24) and exposed to light, comprising: holding the wafer with the resist film facing downward;
A step (10) of immersing the resist film in a developer (29) in a container (27), and then a step (11) of supplying a rinsing solution (40) into the container to replace the developer with the rinsing solution. ) A method for forming a resist pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3346789A JPH02213120A (en) | 1989-02-13 | 1989-02-13 | Resist-pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3346789A JPH02213120A (en) | 1989-02-13 | 1989-02-13 | Resist-pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02213120A true JPH02213120A (en) | 1990-08-24 |
Family
ID=12387353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3346789A Pending JPH02213120A (en) | 1989-02-13 | 1989-02-13 | Resist-pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02213120A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335534A (en) * | 1994-06-15 | 1995-12-22 | Agency Of Ind Science & Technol | Formation of fine resist pattern |
WO2017049883A1 (en) * | 2015-09-25 | 2017-03-30 | 京东方科技集团股份有限公司 | Mask, exposure device and exposure method |
-
1989
- 1989-02-13 JP JP3346789A patent/JPH02213120A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335534A (en) * | 1994-06-15 | 1995-12-22 | Agency Of Ind Science & Technol | Formation of fine resist pattern |
WO2017049883A1 (en) * | 2015-09-25 | 2017-03-30 | 京东方科技集团股份有限公司 | Mask, exposure device and exposure method |
US10114283B2 (en) | 2015-09-25 | 2018-10-30 | Boe Technology Group Co., Ltd. | Mask plate, exposure device, and exposure method |
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