JPH01302819A - Spray development device - Google Patents

Spray development device

Info

Publication number
JPH01302819A
JPH01302819A JP13364788A JP13364788A JPH01302819A JP H01302819 A JPH01302819 A JP H01302819A JP 13364788 A JP13364788 A JP 13364788A JP 13364788 A JP13364788 A JP 13364788A JP H01302819 A JPH01302819 A JP H01302819A
Authority
JP
Japan
Prior art keywords
substrate
development
degrees
treated
spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13364788A
Other languages
Japanese (ja)
Other versions
JPH07111950B2 (en
Inventor
Masaaki Kawahara
正明 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63133647A priority Critical patent/JPH07111950B2/en
Publication of JPH01302819A publication Critical patent/JPH01302819A/en
Publication of JPH07111950B2 publication Critical patent/JPH07111950B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent readhesion of a development waste liquor to a substrate to be treated and to reduce development defect by providing a nozzle for spraying the development liquid at a specific angle to one side from the rotary center of the substrate to be treated from the upper rear part in the direction of traveling of the one side. CONSTITUTION:A spray development device for performing development treatment by spraying a development liquid 25 to a pattern-exposed photoresist on a substrate 23 to be treated while rotating it is provided with a nozzle 24 for spraying the development liquid 25 in a fan shape at an incident angle theta of 20 to 30 degrees from the back upper part in the direction of movement of one side at the one side from the rotary center of the substrate to be treated 23 and a discharge port 21a at the upper part of the side wall of a cup 21 in approximately cylindrical shape enclosing the substrate to be treated 23. If the incident angle theta of the above development liquid is greater than 30 degrees, reflection to the upper surface side of the substrate to be treated increases. Also, if it is smaller than 20 degrees, the central opening part of the reflection-prevention plate 26 becomes larger if it is smaller than 20 degrees so that the reflection-prevention effect is reduced. Thus, the incident angle theta should be 20 to 30 degrees.

Description

【発明の詳細な説明】 〔概 要〕 半導体装置製造用のフォトマスクやウェハ等を現像する
現像装置の改良に関し、 被処理基板への現像廃液の再付着を防止することによっ
て、現像欠陥を低減するスプレィ現像装置を提供するこ
とを目的とし、 被処理基板を回転させつつその上のパターン露光された
フォトレジストに現像液を噴射する現像処理を行う現像
装置であって、 被処理基板の回転中心から片側の部分に、該片側の部分
の移動方向の後上方から20〜30度の入射角で、現像
液を扇状に噴射するノズルを有し、前記被処理基板を包
囲する略円筒状のカップの側壁の上部に排気口を設けた
構成である。
[Detailed Description of the Invention] [Summary] Regarding the improvement of a developing device for developing photomasks, wafers, etc. for semiconductor device manufacturing, development defects are reduced by preventing development waste from re-adhering to the substrate to be processed. The purpose of the present invention is to provide a spray developing device that performs a developing process in which a developing solution is sprayed onto a pattern-exposed photoresist on a substrate to be processed while rotating the substrate to be processed, wherein the center of rotation of the substrate to be processed is a substantially cylindrical cup surrounding the substrate to be processed, having a nozzle on one side thereof at an incident angle of 20 to 30 degrees from the rear and upper side of the moving direction of the one side part; The configuration has an exhaust port at the top of the side wall.

〔産業上の利用分野〕[Industrial application field]

本発明は、半導体装置製造用のフォトマスクやウェハ等
を現像する現像装置の改良に関する。
The present invention relates to an improvement in a developing device for developing photomasks, wafers, etc. for semiconductor device manufacturing.

フすトマスクやウェハの製造において、選択露光された
レジストを現像するための現像方法は、現像液中に基板
を漬ける従来の浸漬現像法からスプレー現像に変わって
きた。これは自動化が容易、現像分布の均一性が高い、
新鮮な現像液を被現像面に供給できる、現像液の少量で
済むなどの理由によるもので、このためのスプレィ現像
装置が種々実用化されているが、パターンの微細化と共
に現像欠陥の発生がさらに少ない現像装置の出現が望ま
れている。
In the manufacture of foot masks and wafers, the development method for developing selectively exposed resist has changed from the conventional immersion development method in which the substrate is immersed in a developer solution to spray development. This is easy to automate, has high uniformity of development distribution,
This is due to the fact that fresh developer can be supplied to the surface to be developed, and only a small amount of developer is required, and various spray developing devices have been put into practical use for this purpose. It is desired that fewer developing devices be used.

〔従来の技術〕[Conventional technology]

半導体装置の製造プロセスで用いるフォトマスクの製造
において、マスク上にパターンを形成する 従来のこの種の現像装置は、第3図にその概略構造を示
すように、上部が開口した円筒上のカップ11内に、回
転する載置台12を設け、該載置台12上にレジストを
塗布して選択露光させたフォトマスク基板やウェハなど
の被処理基板13を吸着保持しつつ回転させ、上方のノ
ズル14から基板全面に現像液15を吹き付けて現像を
行うようになっていた。
In the manufacture of photomasks used in the manufacturing process of semiconductor devices, a conventional developing device of this type for forming a pattern on a mask has a cylindrical cup 11 with an open top, as shown in the schematic structure of FIG. A rotating mounting table 12 is provided inside the mounting table 12, and a substrate 13 to be processed, such as a photomask substrate or a wafer, coated with a resist and selectively exposed on the mounting table 12 is rotated while being held by suction. Development was performed by spraying developer 15 over the entire surface of the substrate.

そして被処理基板面から遠心力により周囲に飛散した現
像廃液がカップの内壁ではね返って基板に再付着するこ
とを防ぐために、基板面以外を覆う逆さ漏斗状のはね返
り防止+5.16が設けられており、またカップ11の
底面に落下した現像廃液や飛沫は底面に設けた産気口1
7から吸引することにより強制的に排出されるようにな
っている。
In order to prevent the developer waste that has been scattered from the surface of the substrate to be processed into the surrounding area due to centrifugal force from bouncing off the inner wall of the cup and re-adhering to the substrate, an inverted funnel-shaped splash prevention +5.16 is provided that covers the area other than the substrate surface. In addition, the developer waste and droplets that have fallen to the bottom of the cup 11 are removed through the air outlet 1 provided at the bottom.
It is forcibly discharged by suction from 7.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来の現像装置においては、現像中(基板の回転中
)にはね返り防止板16の上側で被処理基板13の周囲
に飛散した現像廃液が力・ノブ11の内壁ではね返って
マスク基板13に再付着して現像欠陥を発生させるとい
う問題点があった。また現像前後のマスク基板の装着・
取り出し等の搬送時において、排気口17がカップ11
の底部に位置しているため、はね返り板16の上側の排
気が不完全なため前回スプレィ時の現像液の飛沫が十分
に排気されずに漂っており、搬送中の被処理基板に付着
して欠陥を発生させるという問題点もあった。
In the conventional developing device described above, during development (while the substrate is rotating), the developer waste liquid that is scattered around the substrate 13 on the upper side of the anti-repellent plate 16 is rebounded by force and the inner wall of the knob 11 and returned to the mask substrate 13. There is a problem in that it adheres and causes development defects. Also, attaching the mask substrate before and after development.
During transportation such as taking out, the exhaust port 17 is connected to the cup 11.
Since the upper part of the repelling plate 16 is not fully vented, the developer droplets from the previous spraying are not sufficiently exhausted and are floating around, and may adhere to the substrate to be processed during transportation. There was also the problem of generating defects.

本発明は上記問題点に鑑み創出されたもので、被処理基
板への現像廃液の再付着を防止することによって、現像
欠陥を低減するスプレィ現像装置を提供することを目的
とする。
The present invention was created in view of the above problems, and an object of the present invention is to provide a spray developing device that reduces development defects by preventing developer waste from re-adhering to a substrate to be processed.

〔課題を解決するための手段〕[Means to solve the problem]

上記の問題点は、 被処理基板を回転させつつその上のパターン露光された
フォトレジストに現像液を噴射する現像処理を行うスプ
レィ現像装置であって、被処理基板の回転中心から片側
の部分に、該片側の部分の移動方向の後上方から20〜
30度の入射角で、現像液を扇状に噴射するノズルを有
し、前記被処理基板を包囲する略円筒状の力・ノブの側
壁の上部に排気口を設けてなることを特徴とする本発明
のスプレィ現像装置により解決される。
The above-mentioned problem is that the spray developing device performs development processing by spraying developer onto the pattern-exposed photoresist on the substrate while rotating the substrate. , 20~ from the rear upper part in the moving direction of the one side part
This book is characterized in that it has a nozzle that sprays developer in a fan shape at an incident angle of 30 degrees, and has an approximately cylindrical force surrounding the substrate to be processed and an exhaust port provided at the upper part of the side wall of the knob. This is solved by the spray developing device of the invention.

〔作用〕[Effect]

移動方向の斜め後方から小さい入射角で現像液が被処理
基板の表面に噴射されるので、噴射液が基板表面に衝突
する際の相対速度が小さくなることにより被処理基板の
周囲および上側に飛散する現像廃液が減少する。
Since the developer is sprayed onto the surface of the substrate to be processed at a small angle of incidence from diagonally backward in the direction of movement, the relative velocity of the sprayed liquid when it collides with the substrate surface is reduced, causing it to scatter around and above the substrate. This reduces developer waste.

そしてスプレィが終了するとカップ上部の現像廃液の飛
沫は排気口から速やかに排気され、搬送される被処理基
板を汚染することがない。
When the spraying is finished, the droplets of developer waste at the top of the cup are quickly exhausted from the exhaust port, so that they do not contaminate the substrate being transported.

〔実施例〕〔Example〕

以下添付図により本発明の詳細な説明する。 The present invention will be described in detail below with reference to the accompanying drawings.

第1図は本発明のスプレィ現像装置の要部側断面図、第
2図は現像液の噴射状態を示す図である。
FIG. 1 is a sectional side view of a main part of a spray developing device according to the present invention, and FIG. 2 is a diagram showing a state in which a developer is sprayed.

第1図において、本発明のスプレィ現像装置は、一方の
内壁の上部に排気口21aと底面に排出口21bとを備
えた略円筒状のカップ21の内部に、図示しないモータ
で回転駆動される基板載置台22が配設され、該i1装
置22に関して排気口21aと反対側でかつ該載置台2
2の斜め上方の位置に現像液25を噴射するノズル24
が設けられている。 そして被処理基板23の上面以外
を覆う逆漏斗状のはね返りら吸引することにより強制的
に排出されるようになっている。
In FIG. 1, the spray developing device of the present invention is installed inside a substantially cylindrical cup 21 having an exhaust port 21a at the top of one inner wall and an exhaust port 21b at the bottom, and is rotatably driven by a motor (not shown). A substrate mounting table 22 is provided on the side opposite to the exhaust port 21a with respect to the i1 device 22 and on the opposite side of the mounting table 2.
Nozzle 24 that injects developer 25 at a position diagonally above Nozzle 2.
is provided. Then, the inverted funnel-shaped rebound covering the substrate 23 other than the upper surface is forcibly discharged by suction.

そしてこのノズルは第2図に示す如<、扇形に現像液2
5を噴射し、被処理基板23の回転中心から片側の部分
23aに、移動方向の後方斜め上から20〜30度の入
射角θで現像液25が噴射されめに配設されている。従
って被処理基板の中心線の反対側(図では下半分)で逆
方向に移動している部分23bには現像液が噴射されな
いような構成となっている。
As shown in Figure 2, this nozzle dispenses developer solution in a fan shape.
The developing solution 25 is sprayed onto a portion 23a on one side from the center of rotation of the substrate 23 to be processed at an incident angle θ of 20 to 30 degrees from diagonally above and backward in the moving direction. Therefore, the configuration is such that the developer is not sprayed onto the portion 23b that is moving in the opposite direction on the opposite side (the lower half in the figure) of the center line of the substrate to be processed.

上記構成の現像装置を用いた現像処理は、載置台22に
フォトレジストを塗布して選択露光させたフォトマスク
基板やウェハなどの被処理基板23を吸着保持させて矢
印方向へ回転させつつノズル24から現像液25を噴射
させて行う。この際現像液25は移動する被処理基板2
3を追いかける方向から基板表面に入射するので、基板
の上側への反射が少なく現像廃液25゛ の大部分は前
方下方に飛散するので、カップ21の内壁ではね返って
被処理基板23に再付着する割合が減少する。
In the developing process using the developing device configured as described above, the substrate 23 to be processed, such as a photomask substrate or wafer, coated with a photoresist and selectively exposed on the mounting table 22 is held by suction, and the nozzle 24 is rotated in the direction of the arrow. This is done by injecting the developer 25 from. At this time, the developer 25 is applied to the moving target substrate 2.
Since the developing liquid 25 is incident on the substrate surface from the direction chasing the developing liquid 3, there is little reflection toward the upper side of the substrate, and most of the developing waste liquid 25 is scattered forward and downward, so it bounces off the inner wall of the cup 21 and re-attaches to the substrate 23 to be processed. The percentage decreases.

なお検討結果によると、現像液の入射角θが30度より
大きいと、被処理基板の上面側ふの反射が増大し、また
20度より小さいとはね返り防止板の中央開口部を大き
くなりはね返り防止効果が減殺されるので、θは20〜
30度が適切であることがわかった。
According to the study results, when the incident angle θ of the developer is larger than 30 degrees, the reflection on the upper side of the substrate to be processed increases, and when it is smaller than 20 degrees, the central opening of the anti-repellent plate is enlarged to prevent the repelling. Since the effect is reduced, θ is 20~
It was found that 30 degrees is appropriate.

そしてカップ21の底面に落下した現像廃液は底面を排
出口21bに向かって傾斜させであるので、滞留するこ
となく排出口21bから円滑に排出される。
Since the bottom surface of the cup 21 is inclined toward the discharge port 21b, the developing waste liquid that has fallen onto the bottom surface of the cup 21 is smoothly discharged from the discharge port 21b without being retained.

またカップ21内のはね返り防止板21より上側の空間
に発生する現像廃液の飛沫は、上側の排気口21aから
常時吸引されているので、スプレィ動作の終了後に残存
することが少なく、基板の搬送時に残存飛沫が付着して
現像欠陥を発生させる確率が低減する。
In addition, droplets of developer waste generated in the space above the splash prevention plate 21 in the cup 21 are constantly sucked from the upper exhaust port 21a, so they are less likely to remain after the spray operation is finished, and are not sprayed when the substrate is transported. The probability that residual droplets will adhere and cause development defects is reduced.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明のスプレィ現像装置によれば、
現像廃液の被処理基板への再付着や、搬送途中の被処理
基板に現像廃液の飛沫が付着する機会を低減することが
でき、半導体ウェハやフォトマスクのレジスト現像処理
工程における現像欠陥が低減し製品の品質向上を図るこ
とが可能となる。
As described above, according to the spray developing device of the present invention,
It is possible to reduce the chances of the development waste liquid re-adhering to the substrate to be processed and the chance of splashes of the development waste adhering to the substrate to be processed during transportation, reducing development defects in the resist development process of semiconductor wafers and photomasks. It becomes possible to improve the quality of products.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のスプレィ現像装置の要部断面図、 第2図は現像液の噴射状態を示す図、 第3図は従来のスプレィ現像装置の概略を示す図、 である。 図において、 21−・・カップ、      21a−排気口、21
b −排出口、     22−・・i1212度23
−被処理基板、    24−・ノズル、25−現像液
、      25’−現像廃液、θ・・−入射角、 である。 ’、F ’、、、’! −iン 一でS−I 第2n
FIG. 1 is a cross-sectional view of a main part of a spray developing device of the present invention, FIG. 2 is a diagram showing a state of injection of a developing solution, and FIG. 3 is a diagram schematically showing a conventional spray developing device. In the figure, 21--Cup, 21a-Exhaust port, 21
b - Discharge port, 22-...i1212 degrees 23
- Substrate to be processed, 24 - Nozzle, 25 - Developer, 25' - Waste developer, θ... - Incident angle. ',F',,,'! -i in one S-I 2nd n

Claims (1)

【特許請求の範囲】  被処理基板(23)を回転させつつその上のパターン
露光されたフォトレジストに現像液(25)を噴射して
現像処理を行うスプレィ現像装置であって、該被処理基
板(23)の回転中心から片側の部分に、該片側の部分
の移動方向の後上方から20〜30度の入射角(θ)で
、現像液(25)を扇状に噴射するノズル(24)を有
し、 前記被処理基板(23)を包囲する略円筒状のカップ(
21)の側壁の上部に排気口(21a)を設けてなるこ
とを特徴とするスプレィ現像装置。
[Scope of Claims] A spray developing device that performs development processing by spraying a developing solution (25) onto a pattern-exposed photoresist on a substrate (23) while rotating the substrate, the device comprising: A nozzle (24) is installed on one side of the center of rotation of (23) to inject the developer (25) in a fan shape at an incident angle (θ) of 20 to 30 degrees from the upper rear in the direction of movement of the one side. a substantially cylindrical cup surrounding the substrate to be processed (23);
21) A spray developing device characterized in that an exhaust port (21a) is provided at the upper part of the side wall.
JP63133647A 1988-05-31 1988-05-31 Spray developing device Expired - Lifetime JPH07111950B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63133647A JPH07111950B2 (en) 1988-05-31 1988-05-31 Spray developing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63133647A JPH07111950B2 (en) 1988-05-31 1988-05-31 Spray developing device

Publications (2)

Publication Number Publication Date
JPH01302819A true JPH01302819A (en) 1989-12-06
JPH07111950B2 JPH07111950B2 (en) 1995-11-29

Family

ID=15109693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63133647A Expired - Lifetime JPH07111950B2 (en) 1988-05-31 1988-05-31 Spray developing device

Country Status (1)

Country Link
JP (1) JPH07111950B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110164795A (en) * 2019-05-22 2019-08-23 德淮半导体有限公司 Wet processing equipment and wafer wet processing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232417A (en) * 1983-06-16 1984-12-27 Toshiba Corp Semiconductor wafer resist developing apparatus
JPS60103830U (en) * 1983-12-20 1985-07-15 株式会社東芝 rotary developing device
JPS61176120A (en) * 1985-01-31 1986-08-07 Nec Corp Developing device for photoresist
JPS61220429A (en) * 1985-03-27 1986-09-30 Toshiba Corp Resist development device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232417A (en) * 1983-06-16 1984-12-27 Toshiba Corp Semiconductor wafer resist developing apparatus
JPS60103830U (en) * 1983-12-20 1985-07-15 株式会社東芝 rotary developing device
JPS61176120A (en) * 1985-01-31 1986-08-07 Nec Corp Developing device for photoresist
JPS61220429A (en) * 1985-03-27 1986-09-30 Toshiba Corp Resist development device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110164795A (en) * 2019-05-22 2019-08-23 德淮半导体有限公司 Wet processing equipment and wafer wet processing method

Also Published As

Publication number Publication date
JPH07111950B2 (en) 1995-11-29

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