JPS61160930A - Method of supplying surface treatment solution for substrate - Google Patents
Method of supplying surface treatment solution for substrateInfo
- Publication number
- JPS61160930A JPS61160930A JP81585A JP81585A JPS61160930A JP S61160930 A JPS61160930 A JP S61160930A JP 81585 A JP81585 A JP 81585A JP 81585 A JP81585 A JP 81585A JP S61160930 A JPS61160930 A JP S61160930A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nozzle
- horizontal
- treatment liquid
- surface treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体ウェハやガラス板等の基板を ′表
面処理する際の、種々の処理液の供給方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for supplying various processing liquids when surface-treating a substrate such as a semiconductor wafer or a glass plate.
（従来の技術）
基板の表面処理１例えば現゛像処理、特にポジ型フォト
レジストの現像は、基板が処理液に濡らされる最初より
処理が終るまで、処理液を基板に。(Prior Art) Surface Treatment of Substrate 1 For example, in development processing, particularly in the development of positive photoresist, the processing solution is applied to the substrate from the beginning when the substrate is wetted with the processing solution until the end of the processing.
均一に、かつ機械的衝撃を与えることなく供給する必要
がある。It is necessary to supply it uniformly and without applying mechanical shock.
その方法として、基板を処理液に浸漬するディップ法や
、基板に霧状の処理液を吹きつけるスプレー法、あるい
は、基板にノズルより処理液を浴びせるシャワー法があ
る。Examples of this method include a dipping method in which the substrate is immersed in the processing liquid, a spray method in which the substrate is sprayed with a mist of the processing liquid, and a shower method in which the substrate is sprayed with the processing liquid from a nozzle.
しかし、上述の方法には、それぞれ一長一短がある。す
なわち、ディップ法は、処理結果は良好であるが、処理
液が疲労しやすく、液管理が戴しい。また、スプレー法
やシャワー法は、処理の機械化は容易であるが、処理の
最初に、基板を一様に濡らすことが困難であったり、処
理中、基板の各部に、均一に処理液を供給することが困
難であったり、ポジ型フォトレジストのように機械的強
度の弱い膜面を、処理液が損傷したりすることがある。However, each of the above methods has advantages and disadvantages. That is, in the dipping method, although the processing results are good, the processing liquid is easily exhausted and the liquid management is difficult. In addition, although it is easy to mechanize the processing of the spray method and shower method, it is difficult to uniformly wet the substrate at the beginning of the processing, and during processing, the processing liquid is uniformly supplied to each part of the substrate. It may be difficult to do so, or the processing liquid may damage the film surface, which has weak mechanical strength, such as a positive photoresist.
そのため、たとえば特開昭５７−１９２９５５号公報に
開示されているように、処理液をスリットよりカーテン
状に流下させる方法や、特開昭５８−３６６７９号公報
に開示されているように、基板の上面に近接して基板と
平行に回転するパイプに多数のノズルを穿設して、ノズ
ルより処理液を供給する方法が提案されている。Therefore, for example, as disclosed in Japanese Patent Laid-Open No. 57-192955, there is a method in which the processing liquid flows down from a slit in a curtain shape, and as disclosed in Japanese Patent Application Laid-Open No. 58-36679, A method has been proposed in which a large number of nozzles are provided in a pipe that rotates in parallel with the substrate close to the top surface, and a processing liquid is supplied from the nozzles.
（本発明が解決しようとする問題点）
しかし、上述の２方法は、スリットやノズルの形状や寸
法に高い精度を要す゛るため、製作費が高価になるとい
う問題がある。(Problems to be Solved by the Present Invention) However, the above two methods require high precision in the shape and dimensions of the slit and nozzle, resulting in a problem of high manufacturing costs.
（問題点を解決するための手段）
本発明では、その目的達成のため１次のような手段がと
られる。(Means for Solving the Problems) In the present invention, the following measures are taken to achieve the object.
（１）水平をなす基板に、ほぼ水平方向を向くノズルよ
り噴射される処理液を、その水平速度がほぼ零になった
位置で、自重により基板上に落下させる。(1) A processing liquid is sprayed onto a horizontal substrate from a nozzle facing in a substantially horizontal direction, and is caused to fall onto the substrate by its own weight at a position where its horizontal velocity becomes approximately zero.
（２）ノズルより噴射した処理液を、傾斜板をもって反
射させてほぼ水平とし、その水平速度がほぼ零になった
位置で、自重により基板上に落下させる。(2) The processing liquid injected from the nozzle is reflected by the inclined plate to make it almost horizontal, and at the position where the horizontal velocity becomes almost zero, it is caused to fall onto the substrate by its own weight.
（作 用） 本発明の方法においては、噴射された処理液は。(for production) In the method of the present invention, the injected treatment liquid is:
その水平速度が殆んど零になって、自重により基板上に
落下するので、落差を小さくすれば、基板の表面に与え
る機械的衝撃が小さくなり、従って弱い膜面を損傷する
ことはない。Since its horizontal speed becomes almost zero and it falls onto the substrate due to its own weight, by reducing the drop, the mechanical impact applied to the surface of the substrate will be reduced, and therefore the weak film surface will not be damaged.
また、基板が回転しているので、処理液を基板上に、処
理開始より終了まで、均一に供給することができる。Furthermore, since the substrate is rotating, the processing liquid can be uniformly supplied onto the substrate from the start to the end of the process.
さらに、処理液を扇形に拡散したり、ノズルを移動させ
ることにより、処理液を基板により均一に供給すること
ができる。Further, by spreading the processing liquid in a fan shape or moving the nozzle, the processing liquid can be more uniformly supplied to the substrate.
（実施例）
図面は、本発明方法のいくつかの実施例を示すもので、
各実施例における同一部材には、同一符号を付けて、反
復説明を省略する。(Examples) The drawings show some examples of the method of the present invention,
Identical members in each embodiment are given the same reference numerals, and repeated explanations will be omitted.
第１図と第２図は、第１実施例を説明するためのもので
、膜面（図示省略）を上面として水平をなす基板（１）
の下面中央部は１回転する吸着盤（２）上に保持されて
いる。Figures 1 and 2 are for explaining the first embodiment, and show a horizontal substrate (1) with the film surface (not shown) as the top surface.
The center part of the lower surface of is held on a suction cup (2) that rotates once.
基板（１）の−側縁部上力には、水平をなして基板（１
）の中心方向を向くノズル（３）６ｔ、高さを調節しう
るようにして設置されている。On the negative side edge of the board (1), the board (1) is placed horizontally.
) The nozzle (3) 6t faces the center direction, and is installed so that its height can be adjusted.
ノズル（３）の先端には、第２図に示すように円形の噴
射口（４）が穿設され、またノズル（３）の後端は、弁
（５）を介して、給液管（６）により、加圧された処理
液タンク（図示省略）に接続されている。The tip of the nozzle (3) is provided with a circular injection port (4) as shown in Figure 2, and the rear end of the nozzle (3) is connected to a liquid supply pipe ( 6) is connected to a pressurized processing liquid tank (not shown).
この実施例においては、基板（１）に対するノズル（３
″）の高さと、弁（５）の開度と処理液圧を調節するこ
とにより、ノズル（３）から水平に噴射された処理液（
７）は、基板（１）の上方でその水平速度が次第に低下
し、自重により、ほぼ垂直に基板（１）上に落下する。In this example, the nozzle (3) is attached to the substrate (1).
By adjusting the height of the processing liquid (''), the opening degree of the valve (5), and the processing liquid pressure, the processing liquid (
7) gradually decreases its horizontal speed above the substrate (1) and falls almost vertically onto the substrate (1) due to its own weight.
従って、基板（１）の膜面には、処理液（７）のノズル
（３）から基板（１）までの落差による位置エネルギー
のみが衝撃となフてかかるので、ノズル（３）の高さを
低くすれば、基板（１）の膜面に与える機械的衝撃を著
しく小さくして、損傷を防止することができる。Therefore, only the potential energy due to the drop from the nozzle (3) of the processing liquid (7) to the substrate (1) acts as an impact on the film surface of the substrate (1). By lowering , the mechanical impact applied to the film surface of the substrate (1) can be significantly reduced and damage can be prevented.
また、基板（１）は回転しているので、処理液（７）は
、基板（１）上に均一に供給される。Further, since the substrate (1) is rotating, the processing liquid (7) is uniformly supplied onto the substrate (1).
第３図は、第２実施例におけるノズル（１１）の先端を
示すもので、上記噴射口（４）に代えて、横長の噴射口
（１２）が穿設されている。FIG. 3 shows the tip of the nozzle (11) in the second embodiment, in which a horizontally elongated injection port (12) is provided in place of the injection port (4).
その他の構成は、第１実施例と同様につき図示を省略す
る。The other configurations are the same as those in the first embodiment, and illustration thereof is omitted.
本実施例においては、ノズル（１１）より噴射された処
理液は、水平をなす扇形に広がった後、自重により、ほ
ぼ垂直に、弧状の帯となって基板（１）上に落下する。In this embodiment, the processing liquid injected from the nozzle (11) spreads in a horizontal fan shape and then falls almost vertically in an arcuate band onto the substrate (1) due to its own weight.
本実施例では、第１実施例に比し、処理液の噴射量を多
くしうるとともに、処理液を基板上に、第１実施例にお
けるよりもさらに均一に供給することができる。In this embodiment, compared to the first embodiment, it is possible to increase the amount of the processing liquid to be sprayed, and it is also possible to supply the processing liquid onto the substrate more uniformly than in the first embodiment.
なお、ノズル（１１）を、左右方向に移動させたり。In addition, the nozzle (11) may be moved in the left-right direction.
首振り運動させることもある。Occasionally, the patient may be given a shaking motion.
第４図と第５図は、第３実施例を示すもので、ノズル（
１１）は、その軸線と平行をなすエアーシリンダ（２１
）のピストン杆（２１ａ ）に吊支され、エアーシリン
ダ（２１）の伸縮により、ノズル（１１）は、処理液（
７）を噴射しながら、前後に往復移動する。Figures 4 and 5 show the third embodiment, in which the nozzle (
11) is an air cylinder (21) parallel to its axis.
) The nozzle (11) is suspended from the piston rod (21a) of the processing liquid (
7) Move back and forth while spraying.
従って１本実施例では、第２実施例に比して。Therefore, in this embodiment, compared to the second embodiment.
さらに均一に、処理液（７）を基板（１）上に供給する
ことができる。Furthermore, the processing liquid (7) can be uniformly supplied onto the substrate (1).
なお、ノズル（１１）の前後移動装置は、エアーシリン
ダ（２１）に代えて、クランクとモータ、あるいはラッ
クとピニオンに連動した両方向に回転するモータ等、適
宜の装置を使用することができる。Note that as the device for moving the nozzle (11) back and forth, an appropriate device such as a crank and a motor, or a motor that rotates in both directions linked to a rack and a pinion can be used instead of the air cylinder (21).
第６図は、第４実施例を示すもので、ノズル（１１）は
、基板（１）の側方において上方を向き、その上端には
、４５°に屈曲する散布板（３１）の水平片（３１ａ）
の中央部が嵌着され、かつ散布板（３１）の傾斜片（３
１ｂ ）の内面は、基板（１）の方向を向いており、ノ
ズル（１１）と散布板（３１）は、一体となって、適宜
前後に移動しうるようになっている。FIG. 6 shows a fourth embodiment, in which the nozzle (11) faces upward on the side of the substrate (1), and the horizontal piece of the dispersion plate (31) bent at 45 degrees is attached to the upper end of the nozzle (11). (31a)
The central part of the dispersion plate (31) is fitted and the inclined piece (3
1b) faces toward the substrate (1), and the nozzle (11) and the dispersion plate (31) are integrally movable back and forth as appropriate.
第４実施例においては、ノズル（１１）より上方に噴射
された処理液（７）は、散布板（３１）の傾斜片（３１
ｂ ）により、基板（１）の中央に向かって水平に反射
させられ、第２実施例と同様の作用をする。In the fourth embodiment, the treatment liquid (7) sprayed upward from the nozzle (11) is applied to the inclined piece (31) of the spray plate (31).
b), the light is reflected horizontally toward the center of the substrate (1), and has the same effect as in the second embodiment.
第４実施例の方法は、第２実施例に比し、装置を大型と
することなく、処理液の噴射速度を大きくしたり、噴出
量を多くしたりすることができるとともに、処理液の拡
散角度を大きくすることができるので、大型の基板（１
）の処理に適用して効果的である。Compared to the second embodiment, the method of the fourth embodiment makes it possible to increase the injection speed and amount of the processing liquid without increasing the size of the apparatus, and also allows the processing liquid to be diffused. Since the angle can be increased, large substrates (1
) is effective when applied to processing.
第７図と第８図は、第５実施例を示すもので。7 and 8 show the fifth embodiment.
この場合には、上記散布板（３１）に代えて、側面形が
、斜辺を底辺とする三角形をなし、第８図示の如く、平
面形が、基板（１）に向かって次第に拡開して、その先
端が、基板（１）の直径より若干長寸の台形をなし、か
つ両側面が閉塞された散布箱（４１）が使用される。In this case, instead of the above-mentioned scattering plate (31), the side surface has a triangular shape with the hypotenuse as the base, and the planar shape gradually expands toward the substrate (1) as shown in the eighth figure. A scattering box (41) is used, the tip of which has a trapezoidal shape slightly longer than the diameter of the substrate (1), and whose both sides are closed.
散布箱（４１）の底抜（４１ａ ）の基端（第７図右端
）近くに、上方を向くノズル（１１）の上端が嵌着され
、かつ底板（４１ａ ）の遊端には下方を向く横長の開
口（４２）が穿設されている。The upper end of the nozzle (11) facing upward is fitted near the base end (right end in Figure 7) of the bottom opening (41a) of the dispersion box (41), and the free end of the bottom plate (41a) faces downward. A horizontally long opening (42) is provided.
第５実施例においても、第４実施例と同様に、処理液（
７）は、ノズル（１１）より上向噴射されるが、その上
方の第１傾斜板（４１ｂ）により、基板（１）方向に反
射させられ、ほぼ水平に飛散して、その水平速度が著し
く低下した時に、第２傾斜板（４１ｃ）に当たって第２
傾斜板（４１ｃ ）表面をったうようにして、確実に水
平速度が零となってから、自重により、開口（４２）よ
り基板（１）上に流下する。In the fifth embodiment, similarly to the fourth embodiment, the processing liquid (
7) is injected upward from the nozzle (11), but is reflected in the direction of the substrate (1) by the first inclined plate (41b) above it, scattering almost horizontally, and its horizontal velocity is extremely high. When it drops, it hits the second inclined plate (41c) and the second
After the horizontal velocity reaches zero while tracing the surface of the inclined plate (41c), it flows down onto the substrate (1) through the opening (42) due to its own weight.
本方法においては、基板（１）の表面には、基板（１）
より拡散箱（４１）の底板（４１ａ）までの高さに相当
する処理液（７）の位置エネルギーと等しい運動エネル
ギーを有する処理液（７）が流下する。In this method, on the surface of the substrate (1), the surface of the substrate (1) is
A processing liquid (7) having a kinetic energy equal to the potential energy of the processing liquid (7) corresponding to the height up to the bottom plate (41a) of the diffusion box (41) flows down.
本方法は、第４実施例と同様の効果を奏し、かつその効
果はより確実である。This method has the same effect as the fourth embodiment, and the effect is more reliable.
第９図と第１０図は、第６実施例を示すもので、この場
合には、側面形が上記散布箱（４１）とやや異なる散布
箱（５１）が使用されている。9 and 10 show a sixth embodiment, in which a scattering box (51) whose side profile is slightly different from the above-mentioned scattering box (41) is used.
この散布箱（５１）においても、その底抜（５１ａ ）
の基端近くに、上方を向くノズル（１１）の上端が嵌着
されているが、散布箱（５１）の頂板（５１ｂ ）は、
ノズル（１１）の上方部分において、上記散布箱（４１
）の第１傾斜板（４１ｂ）と同様に、約４５度の角度で
傾斜し、かつ底板（５１ａ）の遊端部における上記開口
（４２）に相当する開口（５２）の上方において、ほぼ
垂直をなすように下向きに湾曲している。Even in this scattering box (51), the bottom (51a)
The upper end of the nozzle (11) facing upward is fitted near the base end of the spray box (51), but the top plate (51b) of the spray box (51)
In the upper part of the nozzle (11), the above-mentioned scattering box (41
), it is inclined at an angle of approximately 45 degrees, and above the opening (52) corresponding to the opening (42) at the free end of the bottom plate (51a), it is approximately vertical. It is curved downward to form a shape.
散布箱（５１）の平面形は、散布箱（４１）のそれと同
様である。The planar shape of the scattering box (51) is similar to that of the scattering box (41).
本方法も、第５実施例と同様の効果を奏する。This method also produces effects similar to those of the fifth embodiment.
上記第４実施例から第５実施例において、傾斜片（３１
ｂ）や第１傾斜板（４１ｂ）、頂板（５１ｂ）の傾斜角
度は、ノズル（１１）の向きによっては、必ずしも４５
度に限定するものでない、また、ノズル（１１）の向き
も、上向きに限らず、例えば下向きとし。In the fourth to fifth embodiments described above, the inclined piece (31
b), the first inclined plate (41b), and the top plate (51b) may vary depending on the orientation of the nozzle (11).
Furthermore, the direction of the nozzle (11) is not limited to upward, but may be downward, for example.
傾斜板（３１ｂ ）の傾きを、第６図示の如き覆いかぶ
さる向きでなく、上向きとしてもよい。The inclined plate (31b) may be inclined upward, instead of in the overlapping direction as shown in the sixth figure.
さらに、本発明に係る方法は、現像液を供給するのに用
いる他、例えばエツチング液を供給するのに用いてもよ
く、処理液の種類に限定はない。Further, the method according to the present invention may be used not only for supplying a developing solution but also for example for supplying an etching solution, and there is no limitation on the type of processing solution.
（本発明の効果）
本発明においては、処理液が基板に到達する時は、ノズ
ルから噴射された処理液の水平速度はほぼ零となり、自
重落下の運動エネルギーのみが基板にかかるので噴射さ
れる処理液の水平部の高さを適宜調節することにより、
基板の受ける衝撃を。(Effects of the present invention) In the present invention, when the processing liquid reaches the substrate, the horizontal velocity of the processing liquid injected from the nozzle becomes almost zero, and only the kinetic energy of the falling weight is applied to the substrate, so that the processing liquid is not injected. By appropriately adjusting the height of the horizontal part of the processing liquid,
The impact that the board receives.
極めて小さくして、基板の膜面の損傷を防止することが
できる。By making it extremely small, damage to the film surface of the substrate can be prevented.
なお、基板（１）を回転させておけば、基板（１）をよ
り均一に処理することができる。Note that if the substrate (1) is rotated, the substrate (1) can be processed more uniformly.
また、ノズルを前後往復動させることにより、基板をよ
り均一に処理することができる。Further, by reciprocating the nozzle back and forth, the substrate can be processed more uniformly.
さらに、実施例に使用される装置が極めて簡単で、精度
を要せず、また特殊なノズルを使用する必要がないので
、装置を安価に製作することができる。Furthermore, the apparatus used in the embodiments is extremely simple, does not require precision, and does not require the use of special nozzles, so the apparatus can be manufactured at low cost.
また、現像液の供給に本発明に係る方法を用いた場合に
は、いわゆる現像による膜減り、すなわち現像処理後に
も残在しているべきレジスト層の膜厚が薄くなる不都合
を低減させることができ、また、エツチング液の供給に
用いた場合には、サイドエツジを低減させうろことが期
待できる６Furthermore, when the method according to the present invention is used to supply the developer, it is possible to reduce the problem of so-called film thinning due to development, that is, the inconvenience that the thickness of the resist layer that should remain even after the development process becomes thinner. Furthermore, when used for supplying etching solution, side edges can be reduced and it can be expected to be effective6.
第１図は１本発明方法の第１実施例を実施するための処
理液供給装置の側面図、
第２図は、同じくノズルの正面図。
第３図は、第２実施例の実施のためのノズルの正面図、
第４図は１本発明方法の第３実施例の実施のための処理
液供給装置の側面図。
第５図は、同じく平面図、
第６図は１本発明方法の第４実施例の実施のための処理
液供給装置の側面図、
第７図は１本発明方法の第５実施例の実施のための処理
液供給装置の中央縦断側面図、第８図は、同じく平面図
、
第９図は、本発明方法の第６実施例の実施のための処理
液供給装置の中央縦断側面図。
第１０図は、同じく平面図である。
（１）基 板 （２）吸着盤
（３）ノズル （４）噴射口
（５）弁 （６）給液管
（７）処理液 （１１）ノズル（１２）噴射口
（２１）エアーシリンダ（２１ａ）ピストン
杆 （３１）散布板（３１ａ）水平片 （
３１ｂ）傾斜板（４１）散布箱 （４１ａ）底
板（４１ｂ）第１傾斜板 （４１ｃ）第２傾斜板
（４２）開 口 （５１）散布箱（５１ａ）底
板 （５１ｂ）頂 板（５２）開口
第１図
第９図
第１０図FIG. 1 is a side view of a processing liquid supply device for implementing the first embodiment of the method of the present invention, and FIG. 2 is a front view of the nozzle. FIG. 3 is a front view of a nozzle for implementing the second embodiment, and FIG. 4 is a side view of a processing liquid supply device for implementing the third embodiment of the method of the present invention. FIG. 5 is a plan view, FIG. 6 is a side view of a processing liquid supply device for implementing the fourth embodiment of the method of the present invention, and FIG. 7 is a plan view for implementing the fifth embodiment of the method of the present invention. FIG. 8 is a plan view as well, and FIG. 9 is a central vertical side view of the processing liquid supply device for carrying out the sixth embodiment of the method of the present invention. FIG. 10 is a plan view as well. (1) Substrate (2) Suction cup (3) Nozzle (4) Injection port (5) Valve (6) Liquid supply pipe (7) Processing liquid (11) Nozzle (12) Injection port (21) Air cylinder (21a) ) Piston rod (31) Scatter plate (31a) horizontal piece (
31b) Inclined plate (41) Spreading box (41a) Bottom plate (41b) First inclined plate (41c) Second inclined plate (42) Opening (51) Spreading box (51a) Bottom plate (51b) Top plate (52) ) Opening Fig. 1 Fig. 9 Fig. 10
Claims (9)
り噴射される処理液を、その水平速度がほぼ零になる位
置にて、自重により基板上に落下させることを特徴とす
る基板の表面処理液供給方法。(1) A surface of a substrate characterized in that the processing liquid is sprayed onto a horizontal substrate from a nozzle facing in a substantially horizontal direction and is caused to drop onto the substrate by its own weight at a position where the horizontal velocity becomes approximately zero. Processing liquid supply method.
ことを特徴とする特許請求の範囲第（１）項に記載の基
板の表面処理液供給方法。(2) The method for supplying a surface treatment liquid for a substrate according to claim (1), characterized in that the sprayed treatment liquid is spread in a horizontal fan shape.
特許請求の範囲第（１）項又は第（２）項に記載の基板
の表面処理液供給方法。(3) The method for supplying a surface treatment liquid for a substrate according to claim (1) or (2), characterized in that the nozzle is moved back and forth.
特許請求の範囲第（１）項乃至第（３）項のいずれかに
記載の基板の表面処理液供給方法。(4) The method for supplying a surface treatment liquid to a substrate according to any one of claims (1) to (3), characterized in that the nozzle is reciprocated from side to side.
る特許請求の範囲第（１）項乃至第（４）項のいずれか
に記載の基板の表面処理液供給方法。(5) The method for supplying a surface treatment liquid to a substrate according to any one of claims (1) to (4), characterized in that the nozzle is oscillated horizontally.
射させて水平とし、その水平速度がほぼ零になった位置
で、自重により基板上に落下させることを特徴とする基
板の表面処理液供給方法。(6) Surface treatment liquid supply for a substrate, characterized in that the treatment liquid sprayed from a nozzle is reflected by an inclined plate to make it horizontal, and then dropped onto the substrate by its own weight at a position where the horizontal velocity becomes almost zero. Method.
て反射させて水平とし、水平速度がほぼ零となった時点
で、さらに他の傾斜板に当接させて、傾斜板面上をつた
うように基板に落下させることを特徴とする特許請求の
範囲第（６）項に記載の基板の表面処理液供給方法。(7) The processing liquid sprayed upward from the nozzle is reflected by an inclined plate to make it horizontal, and when the horizontal velocity reaches almost zero, it is brought into contact with another inclined plate and flows on the inclined plate surface. The method for supplying a surface treatment liquid for a substrate according to claim 6, wherein the liquid is dropped onto the substrate in such a manner that the liquid is dropped onto the substrate.
とを特徴とする特許請求の範囲第（６）項又は第（７）
項に記載の基板の表面処理液供給方法。(8) Claim (6) or (7) characterized in that the inclined plate is reciprocated back and forth together with the nozzle.
The method for supplying a surface treatment liquid for a substrate as described in 2.
を特徴とする特許請求の範囲第（６）項乃至第（８）項
のいずれかに記載の基板の表面処理液供給方法。(9) The method for supplying a surface treatment liquid for a substrate according to any one of claims (6) to (8), characterized in that the sprayed treatment liquid is spread in a horizontal fan shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP81585A JPS61160930A (en) | 1985-01-09 | 1985-01-09 | Method of supplying surface treatment solution for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP81585A JPS61160930A (en) | 1985-01-09 | 1985-01-09 | Method of supplying surface treatment solution for substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160930A true JPS61160930A (en) | 1986-07-21 |
| JPH0237690B2 JPH0237690B2 (en) | 1990-08-27 |
Family
ID=11484168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP81585A Granted JPS61160930A (en) | 1985-01-09 | 1985-01-09 | Method of supplying surface treatment solution for substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160930A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140355U (en) * | 1985-02-20 | 1986-08-30 | ||
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| US5020200A (en) * | 1989-08-31 | 1991-06-04 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for treating a wafer surface |
| KR100873152B1 (en) * | 2007-08-03 | 2008-12-10 | 세메스 주식회사 | Substrate cleaning apparatus |
| WO2017090505A1 (en) * | 2015-11-24 | 2017-06-01 | 東京エレクトロン株式会社 | Substrate liquid treatment device, substrate liquid treatment method, and memory medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575223A (en) * | 1978-12-04 | 1980-06-06 | Fujitsu Ltd | Manufacturing semiconductor device |
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
| JPS59232417A (en) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | Semiconductor wafer resist developing apparatus |
-
1985
- 1985-01-09 JP JP81585A patent/JPS61160930A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575223A (en) * | 1978-12-04 | 1980-06-06 | Fujitsu Ltd | Manufacturing semiconductor device |
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
| JPS59232417A (en) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | Semiconductor wafer resist developing apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140355U (en) * | 1985-02-20 | 1986-08-30 | ||
| JPH0532848Y2 (en) * | 1985-02-20 | 1993-08-23 | ||
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| US5020200A (en) * | 1989-08-31 | 1991-06-04 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for treating a wafer surface |
| KR100873152B1 (en) * | 2007-08-03 | 2008-12-10 | 세메스 주식회사 | Substrate cleaning apparatus |
| WO2017090505A1 (en) * | 2015-11-24 | 2017-06-01 | 東京エレクトロン株式会社 | Substrate liquid treatment device, substrate liquid treatment method, and memory medium |
| CN108292599A (en) * | 2015-11-24 | 2018-07-17 | 东京毅力科创株式会社 | Substrate liquid processing device, substrate liquid processing method and storage medium |
| JPWO2017090505A1 (en) * | 2015-11-24 | 2018-08-16 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium |
| US10770316B2 (en) | 2015-11-24 | 2020-09-08 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
| US20200365424A1 (en) * | 2015-11-24 | 2020-11-19 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
| CN108292599B (en) * | 2015-11-24 | 2022-06-10 | 东京毅力科创株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium |
| US11862486B2 (en) | 2015-11-24 | 2024-01-02 | Tokyo Electron Limited | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0237690B2 (en) | 1990-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100285524B1 (en) | Coating liquid application method | |
| CN101826449B (en) | Solution treatment apparatus and solution treatment method | |
| KR101223354B1 (en) | Substrate processing device | |
| KR101259334B1 (en) | Application method and application device | |
| KR100257282B1 (en) | Method of coating | |
| JP2006019734A (en) | Apparatus for processing substrate surface | |
| JPS61104623A (en) | Rotary coater | |
| US10816901B2 (en) | Coater with automatic cleaning function and coater automatic cleaning method | |
| JPS61160930A (en) | Method of supplying surface treatment solution for substrate | |
| JPH11233406A (en) | Method and device for substrate processing | |
| JPH1147662A (en) | Formation of coating film and coating film forming device | |
| CN106325008B (en) | A kind of waterfall type developing nozzle | |
| KR20060107378A (en) | An apparatus for coating and a method for manufacturing a photo mask blank | |
| TWM576079U (en) | Semiconductor cleaning device | |
| JPH029476A (en) | Spin coating device | |
| JPS63283131A (en) | Rotary coater for semiconductor | |
| JPS61206221A (en) | Spin coating device | |
| JP2681133B2 (en) | Processing method | |
| JPH02133916A (en) | Resist coating apparatus | |
| KR100804400B1 (en) | Photoresist coating system and photoresist coating method in photo lithography process | |
| JPS6339966Y2 (en) | ||
| JP3988452B2 (en) | Method for forming a thin film on a substrate | |
| JPS61144825A (en) | Resist developing apparatus | |
| JPH01218664A (en) | Rotary coating apparatus | |
| JP2004063795A (en) | Substrate processing device |