JPS59126633A - Device for processing semiconductor wafer - Google Patents
Device for processing semiconductor waferInfo
- Publication number
- JPS59126633A JPS59126633A JP314383A JP314383A JPS59126633A JP S59126633 A JPS59126633 A JP S59126633A JP 314383 A JP314383 A JP 314383A JP 314383 A JP314383 A JP 314383A JP S59126633 A JPS59126633 A JP S59126633A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- stage
- wafer
- photoresist
- processing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、ウェーハを搬送しながら上方から処理液を
掛け、現像又は現像エツチングするようにした、半導体
ウェーハの処理装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a processing apparatus for semiconductor wafers, which performs development or development etching by spraying a processing solution from above while transporting the wafer.
従来のこの種の半導１体つエーノ・（以下「ウェーハ」
と略称する）の湿式の処理装置は、第１図に概要構成図
で示すようになっていた。（１）は現像室、（２）はこ
の現像室の下方に設置された搬送装置で、例えばベルト
搬送手段からなり、ウェーノ５（３）を一枚宛間隔をあ
けて矢印Ａ方向に所定の速度で搬送する。ウェーハ（３
）の上面には前工程において、ポジ形などのホトレジス
ト（４）が塗布され、所定パターンの露光がされである
。（５）は現像の処理液（９）の配管、（６）はこの配
管から下方に出され、等間隔に配設された多数本の分岐
管で、それぞれ下端に管継手（７）ｆｒ介しシャワーノ
ズル（８）を取付けである。Conventionally, a single semiconductor of this type (hereinafter referred to as a ``wafer'')
The wet processing equipment (abbreviated as ) was shown in a schematic diagram in FIG. 1. (1) is a developing chamber, and (2) is a conveying device installed below this developing chamber, which consists of, for example, a belt conveying means, and carries Waeno 5 (3) one by one at a predetermined interval in the direction of arrow A. Convey at speed. Wafer (3
) is coated with a positive type photoresist (4) in a previous step and exposed in a predetermined pattern. (5) is a pipe for the processing solution (9) for development, and (6) is a number of branch pipes extending downward from this pipe and arranged at equal intervals, each with a pipe joint (7) fr at the lower end. Install the shower nozzle (8).
（９ａ）はこれらのノズル（８）から噴射された処理、
Ｈ（９）のシャワーである。(9a) is the treatment injected from these nozzles (8),
This is a shower at H(9).
このシャワーノズル（８）部を第２図及び第砕図に正面
図及び側面図で示す。分岐管（６）からの処理液がシャ
ワーノズル（８）により、進行方向線に対し扇形に横広
がりになったシャワー（９ａ）となって、ウェーハ（３
）のホトレジスト（４）面に掛けられる。この扇形のシ
ャワー（９ａ）の分布状態を第４図に平面図で示し、ウ
ェーハ（４）は矢印Ａ方向に送られており、扇形に横広
がりになったシャワー（９ａ）が送行に従って全面に掛
かることになる。This shower nozzle (8) section is shown in a front view and a side view in FIG. 2 and a fragmentary view. The processing liquid from the branch pipe (6) is turned into a shower (9a) that spreads laterally in a fan shape with respect to the advancing direction line by the shower nozzle (8), and is applied to the wafer (3).
) on the photoresist (4) side. The distribution state of this fan-shaped shower (9a) is shown in a plan view in Fig. 4. The wafer (4) is being fed in the direction of arrow A, and the fan-shaped shower (9a) spreads out horizontally over the entire surface as it is fed. It will take a while.
こうして、第１図のように、現像室（１）に順次搬入さ
れた各ウェーノ・（３）は、搬送装置（２）により搬送
されながら、多数本のシャワーノズル（８）の下を低速
で順次通り、繰返し扇状のシャワー（９ａ）を浴び、こ
の間にホトレジスト（４）の現像が進行し、現像室（１
）の出口側に至る間（約１分）に現像処理が完了する。In this way, as shown in Fig. 1, each wafer (3) sequentially carried into the developing chamber (1) passes under a large number of shower nozzles (8) at low speed while being conveyed by the conveying device (2). The fan-shaped shower (9a) is repeated in sequence, and during this time the development of the photoresist (4) progresses, and the developing chamber (1
) (about 1 minute) the development process is completed.
ここで、ウェーハ（３）は搬出され、次工程の水洗、乾
燥処理が施される。Here, the wafer (3) is carried out and subjected to the next process of washing with water and drying.
上記従来の装置では、処理液（９）のシャワー（９ａ）
による現像であり、現像室（１）内に処理液（９）の飛
まつが多く発生する。第５図（Ａ）に示すように、ウェ
ーハ（３）のホトレジスト（４）上にシャワー（９ａ）
が掛る前に処理液飛まつＣ９ｂ）が付着すると、この箇
所に不必要な現像が始まる。（Ｂ）図のように、シャワ
ー（９ａ）を浴びて本来の現像が進行するが、処理液飛
まつ（９ｂ）の付着個所の現像進行が他より早く、ホト
レジスト（４）にくぼみ（１０ａ）ができる。こうして
、順次各シャワー（９ａ）を浴びたウェーノー（３）は
現像が進行するが、（Ｃ）図のように、処理液飛まつ（
９ｂ）の付着個所のくぼみ（１０ｂ）が他の所要の現像
より早く進行する。こうして、（Ｄ）図に示すように、
現像処理が終ったウェーハ（３）は、ホトレジスト（４
）に不要なピンホール（１０ｃ）ができたものとなる。In the conventional apparatus described above, the shower (9a) of the processing liquid (9)
, and many splashes of the processing liquid (9) occur in the developing chamber (1). As shown in FIG. 5(A), a shower (9a) is applied onto the photoresist (4) of the wafer (3).
If processing liquid splashes C9b) are deposited before the process is applied, unnecessary development will begin at this location. (B) As shown in the figure, the original development progresses after taking a shower (9a), but the development progresses faster in the areas where the processing liquid splashes (9b) are attached, causing dents (10a) in the photoresist (4). I can do it. In this way, development progresses on the Waeno (3) that has been sequentially exposed to each shower (9a), but as shown in Figure (C), the processing solution is splashed (
The depression (10b) at the attachment point 9b) progresses faster than other required development. In this way, as shown in figure (D),
The wafer (3) that has been developed is coated with photoresist (4).
) has an unnecessary pinhole (10c).
このピンホールｒｌｏｃ）が露光による領域ではなくと
も生じており、不良品となる。なお、第５図では、露光
された領域の現像進行による所定パターン形成の状態は
、図示を略している。This pinhole (rloc) occurs even if it is not an exposed area, resulting in a defective product. In FIG. 5, the state of formation of a predetermined pattern due to the progress of development in the exposed area is not shown.
上記従来装置は、処理液（９）が横広がりのシャワー（
９ａ）となってウェーハ（３）に、送行の前端から次第
に後端に掛けられ、このため、前端に第１段目のシャワ
ーノズル（８）によるシャワー（９ａ）が掛って、全面
に処理液（９）が覆うまでにある時間がかかる。In the conventional apparatus described above, the processing liquid (9) is spread horizontally in the shower (
9a) and the wafer (3) is gradually applied from the front end to the rear end of the feeding process, and the front end is showered (9a) by the first stage shower nozzle (8), and the processing liquid is applied to the entire surface. (9) takes a certain amount of time to cover.
したがって、ウェーハ（３）のホトレジスト（４）上に
、シャワー（９ａ）が掛かる前に、処理液飛まつ（９ｂ
）が付着すると、その個所が未露光個所であっても、不
要のピンホール（１ｏｃ）を生じることになり、品質を
低下させていた。また、横広がりの扇形のシャワー（９
ａ）であるので、各ウェーハ（３）上全面をそれぞれ処
理液（９）で覆うのに、多数のシャワーノズル（８）を
等間隔に配設しなければならず、処理液（９）が多量に
なり、その循環設備は容量の大きいものを要していた。Therefore, before the shower (9a) is applied to the photoresist (4) of the wafer (3), the processing liquid is splashed (9b).
) adhering, even if the area is an unexposed area, an unnecessary pinhole (1oc) is generated, which deteriorates the quality. In addition, there is a fan-shaped shower that spreads horizontally (9
a), in order to cover the entire surface of each wafer (3) with the processing liquid (9), it is necessary to arrange a large number of shower nozzles (8) at equal intervals, and the processing liquid (9) is The amount was large, requiring large-capacity circulation equipment.
また、処理液（９）は多量が循環するので、その劣化が
早かった。Furthermore, since a large amount of the treatment liquid (9) was circulated, its deterioration was rapid.
この発明は、上記従来装置の欠点をなくするためになさ
れたもので、第１段目のノズルから流量調整した処理液
が出され、このノズルの形状は、処理液が飛散せずにま
とまって流下しウェー７１上を瞬時に覆うようにし、処
理液の飛まつの付着によるピンホール発生をなくし、ウ
ェー７１の品質を向上し、第２段目以下のシャワーノズ
ルの数を少なくし、処理液の所要量を低減した、半導体
ウェーハの処理装置を提供することを目的としている。This invention was made in order to eliminate the drawbacks of the conventional apparatuses described above, and the processing liquid with an adjusted flow rate is discharged from the first stage nozzle, and the shape of this nozzle allows the processing liquid to be collected without scattering. The flow instantly covers the top of the wafer 71, eliminates the occurrence of pinholes due to adhesion of splashes of processing liquid, improves the quality of the wafer 71, and reduces the number of shower nozzles in the second stage and below. The object of the present invention is to provide a semiconductor wafer processing apparatus that reduces the amount of wafers required.
第６図はこの発明の一実施例によるウェーノ％の処理装
置の擦要構成図であり、（１）〜（９）、（９ａ）は上
記従来装置と同一のものである。翰は処理液の配管（５
）から下方に出された搬入側の分岐管（６）の下方に、
管継手（ハ）を介し設けられた第１段目のノズルで、分
岐管（６）に取付けられた流量調整弁翰により処理液（
９）が適度な流量に調整されて流下する。流量調整弁（
イ）には例えばニードル弁などを用いる。FIG. 6 is a schematic diagram of a waeno% processing apparatus according to an embodiment of the present invention, and (1) to (9) and (9a) are the same as the conventional apparatus described above. The handle is the processing liquid piping (5
) below the branch pipe (6) on the carry-in side,
The processing liquid (
9) is adjusted to an appropriate flow rate and flows down. Flow rate adjustment valve (
For example, a needle valve is used for (a).
上記第１段目のノズル圀は、第７図及び第８図に正面図
及び側面図で示すようになっている。このノズル翰の形
状、大きさは、流量調整弁（イ）により適度な流量にさ
れた処理液（９）が、棒状にまとまって流下し、速やか
にウェーハ（３）のホトレジスト（４）上面全部を覆う
ようにし、流下途中で飛散しないようにしである。この
状態のウェーハ（３）ヲ第９図に平面図で示し、断面円
形の棒状になって処理液（９）が流下し、ウェーハ（３
）のホトレジスト（４）全面を覆う。The nozzle area of the first stage is shown in front and side views in FIGS. 7 and 8. The shape and size of this nozzle is such that the processing liquid (9), which has been adjusted to an appropriate flow rate by the flow rate adjustment valve (a), flows down in a rod-like manner and quickly covers the entire top surface of the photoresist (4) on the wafer (3). Cover the water to prevent it from scattering during the flow. The wafer (3) in this state is shown in a plan view in FIG.
) Cover the entire surface of the photoresist (4).
第６図ＩＣ戻り、第１段目のノズル（ホ）に続いて、第
２段目のシャワーノズル（８）が配設されてあり、この
第２段目のシャワーノズル（８）から間隔を大きくあけ
て、第３段目及び最終段のシャワーノズル（８）、 （
８）が配設されである。これらのシャワーノズル（８）
ｕ、処理液（９）を扇形に横広がりのシャワー（９ａ）
にして、送行されているウェーハ（３）上に掛けてい〈
Ｏ
上記一実施例の装置による、ウェーハ（３）の現像処理
は次のようになる。現像室（１）内に搬入されたウェー
ハ（３）は、搬送装置（２）によりそれぞれ適当な間隔
をあけて順次送行される。搬入のウェー／５（３）は第
１段目のノズル翰下に送られ、棒状に流下する十分な流
量の処理液（９）で、ホトレジスト（４）上面全部が瞬
時に覆われる。ウェーハ（１）は続いて、第２段目のシ
ャワーノズル（７）下に送られ、処理液（９）の扇形に
横広がりのシャワー（９ａ）が掛けられ、上面に処理液
（９）の膜切れがないように補足している。Returning to the IC in Figure 6, a second stage shower nozzle (8) is arranged following the first stage nozzle (E), and is spaced apart from the second stage shower nozzle (8). Open wide and insert the third and final stage shower nozzle (8).
8) is provided. These shower nozzles (8)
u, Shower the processing liquid (9) spreading horizontally in a fan shape (9a)
and hang it over the wafer (3) being fed.
O Development processing of the wafer (3) using the apparatus of the above embodiment is as follows. The wafers (3) carried into the developing chamber (1) are sequentially transported by a transport device (2) at appropriate intervals. The carrying way/5 (3) is sent to the bottom of the nozzle of the first stage, and the entire upper surface of the photoresist (4) is instantly covered with a sufficient flow rate of the processing liquid (9) flowing down in a rod shape. The wafer (1) is then sent under the second-stage shower nozzle (7), where a fan-shaped shower (9a) of the processing liquid (9) spreads horizontally, and the upper surface is covered with the processing liquid (9). Supplementary measures are taken to ensure that the membrane does not break.
第２段目のシャワーノズル（８）下を過ぎたウェーノー
（１）は、水平姿勢でゆっくり送られており、上面に十
分な処理液（９）が表面張力で膜状にたまっていて、次
第に現像が進行する。このため、次の第３段目のシャワ
ーノズル（８）までの区間Ｂは、従来のような多数段の
シャワーノズル（８）の配設は要しなく、処理液（９）
の量が低減される。こうして、ウェーハ（３）は第３段
目及び最終段のシャワーノズル（８）下を送られ、処理
液のシャワー（９ａ）が掛けられ処理が完全に施される
ようにしている。The Waeno (1) that has passed under the shower nozzle (8) in the second stage is being fed slowly in a horizontal position, and a sufficient amount of processing liquid (9) has accumulated on the upper surface in a film shape due to surface tension, and gradually Development progresses. Therefore, in the section B up to the next third stage shower nozzle (8), there is no need to arrange multiple stages of shower nozzles (8) as in the conventional case, and the treatment liquid (9)
The amount of In this way, the wafer (3) is sent under the third and final stage shower nozzle (8), and is showered with processing liquid (9a) so that the processing is completed.
第１０図は、第１段目のノズル翰による処理液の棒状流
下の作用を示す説明図である。（Ａ）図のように、搬入
されたウェーハ（３）のホトレジスト（４）上面に処理
液飛まつ（９ｂ）が付着しても、第１段目のノズル翰か
らの処理液（９）の棒状流下により、瞬時にホトレジス
ト（４）全面に広がＤ 、（Ｂ）図のように処理液飛ま
つ（９ｂ）を抱き込み全面を処理液（９）膜で覆い、従
来のような処理液飛まつ（９ｂ）による現像先行の余地
がなくなシ、全面にわたって同時に現像が始まる。こう
して、（Ｃ）図のように、ウェーハ（３）は第２段目の
シャワーノズル（７）下に送行され、処理液の扇形のシ
ャワー（９ａ）が掛けられる。なお、第１０図では一５
露光された領域の本来の現像進行による所定パターン形
成の状態は、図示を略している。FIG. 10 is an explanatory diagram showing the effect of the rod-like flow of the processing liquid by the first stage nozzle. (A) As shown in the figure, even if the processing liquid splashes (9b) adhere to the upper surface of the photoresist (4) of the wafer (3) carried in, the processing liquid (9) from the first stage nozzle Due to the rod-like flow, the photoresist (4) instantly spreads over the entire surface (D), as shown in the figure (B), it traps the processing liquid droplets (9b) and covers the entire surface with a film of the processing liquid (9), unlike the conventional processing liquid. There is no room for advance development due to flying spots (9b), and development starts simultaneously over the entire surface. In this way, as shown in Figure (C), the wafer (3) is conveyed under the second-stage shower nozzle (7), and a fan-shaped shower (9a) of the processing liquid is applied thereto. In addition, in Figure 10, 15
The state of the predetermined pattern formed by the original development progress in the exposed area is not shown.
第１１図はこの発明の他の実施例を示す第１段目のノズ
ル部の側面図である。途中に流量調整弁（イ）が設けら
れた分岐管（６）の下端部を適宜に曲げ、適当な口径に
したノズル（２）を形成している。こうして、処理液（
９）が棒状に流下し、ウェーハ（３）のホトレジスト（
４）上を覆うようにしている。FIG. 11 is a side view of the first stage nozzle section showing another embodiment of the present invention. The lower end of a branch pipe (6) with a flow rate regulating valve (a) provided in the middle is bent appropriately to form a nozzle (2) having an appropriate diameter. In this way, the processing solution (
9) flows down in a rod shape, and the photoresist (
4) Cover the top.
第１２図はこの発明の異なる他の実施例を示す第１段目
ノズル部の斜視図である。大口径のウェーハに対応する
ため、管継手（ハ）には、正面にノズル（ハ）が取付け
られ、両側に１対のノズル（ホ）が取付けられ、３本の
ノズルから処理液（９）をそれぞれ棒状に流下する。こ
うして、広め面積のウェーハのホトレジスト全面を速や
かに処理液で覆うようにしている。FIG. 12 is a perspective view of a first stage nozzle section showing another embodiment of the present invention. In order to handle large-diameter wafers, a nozzle (C) is attached to the front of the pipe joint (C), and a pair of nozzles (E) are attached to both sides. Each of them flows down in a rod shape. In this way, the entire surface of the photoresist on a wide-area wafer is quickly covered with the processing liquid.
なお、上記実施例では、第１段目の出口を円形にしたノ
ズルから処理液が断面はぼ円形の棒状にまとまって流下
するようにしたが、ノズルの出口形状を変え、処理液を
横広がりの断面だ円形又は小判形などの棒状にまとまっ
て流下するようにしてもよい。In the above example, the processing liquid was made to flow down from the nozzle with a circular outlet in the first stage in a bar shape with a roughly circular cross section, but the shape of the nozzle outlet was changed to allow the processing liquid to spread laterally. It is also possible to flow down in a rod shape having an oval or oval cross section.
また、上記実施例では、第１段目のノズルの処理液の調
整は、流量調整弁（イ）によったが、他のシャワーノズ
ルの配管系統とは別個のポンプ回路を設け、処理液の流
量調整を現像室外から制御する、ようにしてもよい。In addition, in the above embodiment, the treatment liquid in the first stage nozzle was adjusted using the flow rate adjustment valve (a), but a pump circuit separate from the piping system of the other shower nozzles was provided to adjust the treatment liquid. The flow rate adjustment may be controlled from outside the developing chamber.
さらに、上記実施例では、現像液による現像処理の場合
を説明したが、ウェーハ上に形成されてある配線パター
ンなどを耐湿絶縁保護するため、ポリイミドなどの絶縁
樹脂被膜を施し、この上にホトレジストを塗布し、所定
のノくターンの露光処理しである場合に、現像エツチン
グ液を処理液に用いてホトレジストの現像と絶縁樹脂被
膜のエツチングとを一工程により処理を施すのにも適用
できるものである０
〔発明の効果〕
以上のように、この発明によれば、流量調整した処理液
′ｆ−第１段目のノズルから棒状にまとまっり状態で流
下し、ウェーノーのホトレジスト上を瞬時に覆うように
したので、処理液角まつの付着によるピンホールがなく
なり、ウェー／Ｓの品質が向上され、第２段目以下のシ
ャワーノズルの数が少なくされ、処理液の所要量が低減
でき、経費が節減される。Furthermore, in the above example, the case of development processing using a developer was explained, but in order to protect the wiring patterns formed on the wafer from moisture resistance, an insulating resin film such as polyimide is applied, and a photoresist is applied on this. It can also be applied to developing the photoresist and etching the insulating resin film in one process using a developing etching solution as the processing solution when the photoresist is coated and exposed for a predetermined number of turns. 0 [Effect of the Invention] As described above, according to the present invention, the processing liquid 'f whose flow rate is adjusted flows down from the first stage nozzle in a rod-shaped mass and instantly covers the Waeno photoresist. This eliminates pinholes caused by the adhesion of processing liquid corners, improves the quality of the wafer/S, reduces the number of shower nozzles in the second stage and below, reduces the amount of processing liquid required, and reduces costs. is saved.
第１図は従来のウェーノ１処理装置を示す概要構成図、
第２図及び第３図は第１図のシャワーノズル部の正面図
及び側面図、第４図は第１図のシャワーノズルにより処
理液シャワーが掛けられた状態を示すウェーハの平面図
、第５図は第１図のウェーハ上に処理液角まつが付着し
ホトレジストにピンホールが生じる過程を順に示す説明
図、第６図はこの発明の一実施例によるウェーハ処理装
置を示す概要構成図、第７図及び第８図Ｆｉ第６図の第
１段目ノズル部の正面図及び側面図、第９図は第８図の
ノズルにより処理液が掛けられた状態を示すウェーハの
平面図、第１０図は第６図のウェーハに処理液角まつが
付着した場合の第１段目ノズルによる流下処理液の作用
を順に示す説明図、第１１図はこの発明の他の実施例を
示す第１段目ノズル部の側面図、第１２図はこの発明の
他のさらに異なる実施例を示す第１段目ノズル部の斜視
図である０
２・・・搬送装置、３・・・半導゛体つェーハ、４・・
・ホトレジスト、８・・・シャワーノズル、９・・・処
理液、９ａ・・・処理液のシャワー、２１・・・第１段
目のノズル、２２・・・流バ調整弁、２３．２５．２６
・・・第１段目のノズルなお、図中同一符号は同−又は
相当部分を示す□第１図
第２図 第３図
第５飄
第６図
第７図 第８図
第１Ｏ図
第１１図 第１２図
１．事件の表示 特願昭１５８−３１４３号２、発
明の名称 半導体ウェーハの処理装置３、補正をす
る者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目２番３号名
称 （６０１）三菱電機株式会社代表者片山仁八部
４、代理人
住 所 東京都千代田区丸の内二丁目２番３号〆
′ｒ′
５、補正の対象
明細書の「発明の詳細な説明」の欄。
６、補正の内容
Ｔｌ） 明細書第３ページ第１７行の「ウェーノー＋
４１Ｊを「ウェーハ（３）」に補正する。
（２）明細書第８ページ第６行の「ウェーノ１（ｉｌｌ
を「ウェーハ（３）」に補正する。
以上Figure 1 is a schematic configuration diagram showing a conventional Waeno 1 processing device.
2 and 3 are a front view and a side view of the shower nozzle section of FIG. 1, FIG. 4 is a plan view of the wafer showing a state in which the processing liquid is showered by the shower nozzle of FIG. 1, and FIG. The figures are explanatory diagrams sequentially showing the process in which process liquid droplets adhere to the wafer in Figure 1 and pinholes are formed in the photoresist. Figure 6 is a schematic configuration diagram showing a wafer processing apparatus according to an embodiment of the invention. Figures 7 and 8 are a front view and a side view of the first stage nozzle section in Figure 6, Figure 9 is a plan view of the wafer showing the state in which the processing liquid is applied by the nozzle in Figure 8, Figure 10 is The figures are explanatory diagrams sequentially showing the action of the processing liquid flowing down from the first stage nozzle when a processing liquid droplet adheres to the wafer shown in Fig. 6, and Fig. 11 is a first stage diagram showing another embodiment of the present invention. FIG. 12 is a perspective view of the first-stage nozzle section showing still another embodiment of the present invention. Haha, 4...
- Photoresist, 8... Shower nozzle, 9... Processing liquid, 9a... Processing liquid shower, 21... First stage nozzle, 22... Flow adjustment valve, 23.25. 26
...First stage nozzle Note that the same reference numerals in the figures indicate the same or equivalent parts □ Figure 1 Figure 2 Figure 3 Figure 5 Figure 6 Figure 7 Figure 8 Figure 1O Figure 11 Figure 12 1. Indication of the case: Japanese Patent Application No. 158-3143 2, Title of the invention: Semiconductor wafer processing equipment 3, Person making the amendment Relationship with the case: Address of the patent applicant: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) ) Mitsubishi Electric Corporation Representative Hitoshi Katayama 4, Agent address 5'r' 2-2-3 Marunouchi, Chiyoda-ku, Tokyo, ``Detailed Description of the Invention'' column of the specification to be amended. 6. Contents of the amendment Tl) "Waeno+" on page 3, line 17 of the specification
41J is corrected to "wafer (3)". (2) “Weno 1 (ill)” on page 8, line 6 of the specification
is corrected to "wafer (3)". that's all
Claims (3)
た半導体ウエーノ・を一枚宛順に所定速さで搬送する搬
送装置、上記半導体ウエーノ・の搬入側の上方に配設さ
れてあり、流量調整された処理液が上方から供給され、
この処理液を棒状にまとまった状態で流下し、搬入され
送行さ、れる上記半導体ウェーハのホトレジスト全面を
速やかに覆うようにする第１段目のノズル、及びこの第
１段目ノズルの後方位置と、中間部をあけて搬出側位置
とのうち少なくとも搬出側位置に、上方から供給された
処理液を扇状に横広がりのシャワーにして、上記第１段
目のノズル下を通過して送行される上記半導体ウェーハ
のホトレジスト上に掛けるシャワーノズルを備えたこと
を特徴とする半導体ウェーノーの処理装置。(1) A conveyance device that conveys semiconductor wafers, the upper part of which has been coated with photoresist and has undergone an exposure process, one by one at a predetermined speed, and is disposed above the loading side of the semiconductor wafers, and the flow rate is adjusted. The processing liquid is supplied from above,
A first-stage nozzle that allows the processing liquid to flow down in a rod-like state and quickly cover the entire surface of the photoresist on the semiconductor wafer that is carried in and transported, and a rear position of this first-stage nozzle. , the processing liquid is supplied from above to at least the carry-out side position with an opening in the middle part, and is spread horizontally in a fan shape, and is sent passing under the nozzle of the first stage. A processing apparatus for semiconductor wafers, comprising a shower nozzle applied over the photoresist of the semiconductor wafer.
、めホトレジストの現像処理をするようにしたことを特
徴とする特許請求の範囲第１項記載の半導体ウェーへの
処理装置、。(2) The processing apparatus for semiconductor wafers according to claim 1, wherein the processing liquid is a developing liquid and is adapted to develop semiconductor wafers and photoresists.
樹脂被膜が施されてあり、処理液は現像エツチング液か
らなり、上記ホトレジストの現像処理と上記絶縁樹脂被
膜のエツチング処理を一工程で施すようにしたことを特
徴とする特許請求の範囲第１項記載の半導体ウェーハの
処理装置。(3) The semiconductor wafer is coated with an insulating resin film under the photoresist, and the processing solution consists of a developing and etching solution, so that the development of the photoresist and the etching of the insulating resin film are performed in one step. A semiconductor wafer processing apparatus according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP314383A JPS59126633A (en) | 1983-01-10 | 1983-01-10 | Device for processing semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP314383A JPS59126633A (en) | 1983-01-10 | 1983-01-10 | Device for processing semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126633A true JPS59126633A (en) | 1984-07-21 |
| JPS6233736B2 JPS6233736B2 (en) | 1987-07-22 |
Family
ID=11549129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP314383A Granted JPS59126633A (en) | 1983-01-10 | 1983-01-10 | Device for processing semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126633A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6165435A (en) * | 1984-09-07 | 1986-04-04 | Dainippon Screen Mfg Co Ltd | Method of substrate surface treatment and device therefor |
| JPS61160930A (en) * | 1985-01-09 | 1986-07-21 | Dainippon Screen Mfg Co Ltd | Method of supplying surface treatment solution for substrate |
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| JPH04131388A (en) * | 1990-09-20 | 1992-05-06 | Hitachi Cable Ltd | Formation of fine pattern by etching and spray nozzle used therefor |
| JPH073474A (en) * | 1987-10-31 | 1995-01-06 | Dainippon Screen Mfg Co Ltd | Method and apparatus for surface treatment of substrate |
-
1983
- 1983-01-10 JP JP314383A patent/JPS59126633A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6165435A (en) * | 1984-09-07 | 1986-04-04 | Dainippon Screen Mfg Co Ltd | Method of substrate surface treatment and device therefor |
| JPS61160930A (en) * | 1985-01-09 | 1986-07-21 | Dainippon Screen Mfg Co Ltd | Method of supplying surface treatment solution for substrate |
| JPH0237690B2 (en) * | 1985-01-09 | 1990-08-27 | Dainippon Screen Mfg | |
| JPH073474A (en) * | 1987-10-31 | 1995-01-06 | Dainippon Screen Mfg Co Ltd | Method and apparatus for surface treatment of substrate |
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| JPH04131388A (en) * | 1990-09-20 | 1992-05-06 | Hitachi Cable Ltd | Formation of fine pattern by etching and spray nozzle used therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6233736B2 (en) | 1987-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100253834B1 (en) | Substrate processing apparatus | |
| US5762749A (en) | Apparatus for removing liquid from substrates | |
| JP4776380B2 (en) | Processing apparatus and processing method | |
| JPS59126633A (en) | Device for processing semiconductor wafer | |
| JPH0276A (en) | Method and apparatus for treating material for photographic recording | |
| IE893165L (en) | Mass soldering system providing an improved fluid blast | |
| JP4275968B2 (en) | Substrate cleaning processing equipment | |
| JPS6220217B2 (en) | ||
| JP3312093B2 (en) | Strip metal sheet processing equipment | |
| JPH0982592A (en) | Substrate processing equipment | |
| JPH06260412A (en) | Shower type single sheet processing developing device | |
| JPH10321587A (en) | Method for drying substrate | |
| JP3165883B2 (en) | Photoresist removal method and apparatus | |
| JPH02275737A (en) | Apparatus for slag processing | |
| JPH04118067A (en) | Coating device | |
| JPH09162147A (en) | Substrate treating system | |
| JPH0448091A (en) | Etching device | |
| JP2001156035A (en) | Device for processing board and method for preventing splash from infiltrating into adjoining processing tank | |
| JPH0982678A (en) | Substrate treating system | |
| JPH0661137A (en) | Developing device in photolithography | |
| JPH01227437A (en) | Developing device | |
| JPH0813164A (en) | Pattern etching method for metallic sheet | |
| JPH01170023A (en) | Photoresist developing device | |
| JP2023505125A (en) | Computer-controlled or electronic methods for operating transfer systems and transfer systems in the beverage industry | |
| JPH01117389A (en) | Printed wiring board soft etching device |