JPS6165435A - Method of substrate surface treatment and device therefor - Google Patents
Method of substrate surface treatment and device thereforInfo
- Publication number
- JPS6165435A JPS6165435A JP18657684A JP18657684A JPS6165435A JP S6165435 A JPS6165435 A JP S6165435A JP 18657684 A JP18657684 A JP 18657684A JP 18657684 A JP18657684 A JP 18657684A JP S6165435 A JPS6165435 A JP S6165435A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- processing
- substrate surface
- processing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハ等の基板の表面に、処理液を供
給して、基板の表面処理を行う方法、及びこの方法を実
施するための装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method of supplying a processing liquid to the surface of a substrate such as a semiconductor wafer to perform surface treatment on the substrate, and a method for carrying out this method. Regarding equipment.
半導体ウェハ等の基板面に、所望のパターンを形成させ
る作業には、基板面にフォトレジスト膜を形成し、所要
のパターンを露光焼付けた後、現像液を供給して現像す
る現像工程、あるいは、現像後、基板面に腐食液を供給
して、二ノチングを行う二ノチング工程など、基板面に
処理液を供給して処理を行う工程が含まれる。The work of forming a desired pattern on the surface of a substrate such as a semiconductor wafer involves a development step in which a photoresist film is formed on the substrate surface, the desired pattern is exposed and baked, and then a developer is supplied and developed. After development, the process includes a process of supplying a processing liquid to the substrate surface to perform processing, such as a double notching process in which a corrosive liquid is supplied to the substrate surface and double notching is performed.
従来、このような処理を行うには、基板を水平に保持し
て回転させながら、その表面に処理液をスプレィ散布す
ることが、一般的に行われている。Conventionally, in order to carry out such a treatment, a treatment liquid is generally sprayed onto the surface of the substrate while the substrate is held horizontally and rotated.
また、スプレィ散布ではなく、処理液を、スリット状ノ
ズルから基板面にカーテン状に流下させることも、たと
えば、特開昭５７−１９２９５５号公報や、特開昭５８
−３６６７９号公報に記載されているように、公知であ
る。In addition, instead of spraying, the treatment liquid may be allowed to flow down from a slit-shaped nozzle onto the substrate surface in a curtain-like manner, for example, as disclosed in Japanese Patent Laid-Open No. 57-192955 and Japanese Patent Laid-Open No. 58-1999.
It is publicly known as described in Japanese Patent No.-36679.
上述の従来技術においては、基板の中心部と周辺部との
速度差による処理ムラが発生し、また処理液が回転する
基板面に衝突する際の衝撃力により、フォトレジスト膜
を損傷する等の問題がある。In the above-mentioned conventional technology, processing unevenness occurs due to the speed difference between the center and peripheral parts of the substrate, and the impact force when the processing liquid collides with the rotating substrate surface causes damage to the photoresist film. There's a problem.
また、処理液をスプレィ散布する際には、処理液の滴下
圧力の差、または液粒の大きさの差に基づく処理ムラが
生ずるおそれがある。Furthermore, when the treatment liquid is sprayed, there is a risk that treatment unevenness may occur due to a difference in the dropping pressure of the treatment liquid or a difference in the size of the droplets.
さらに、回転する基板に処理液が衝突する際に、液の一
部が飛散して霧状となって蒸発し、その気化熱によって
温度が低下し、処理液の温度を正確に制御できないこと
、及び処理液が２種以上の成分からなる混合液である場
合、各成分の蒸気圧の差によって、蒸発量が異なるため
、処理液がノズルから射出されて基板面に到達するまで
の間に、処理液の組成が若干変化することなどの問題点
がある。Furthermore, when the processing liquid collides with the rotating substrate, a part of the liquid scatters and evaporates in the form of mist, and the temperature decreases due to the heat of vaporization, making it impossible to accurately control the temperature of the processing liquid. When the processing liquid is a mixed liquid consisting of two or more components, the amount of evaporation varies depending on the difference in vapor pressure of each component. There are problems such as a slight change in the composition of the processing liquid.
かかる問題点に対処するため、たとえば特開昭５７−１
５２１２９号公報に記載されている如く、現像液をスプ
レィする処理チャンバー内の空間を、あらかじめ現像液
の蒸気で飽和させて、蒸発を防止することや、特開昭５
８−６８７４９号公報に記載されている如く、基板を保
持する回転チャックに温度勾配を補償する装置を附設す
ること等が提案されている。In order to deal with such problems, for example, Japanese Unexamined Patent Publication No. 57-1
As described in Japanese Patent Laid-open No. 52129, the space in the processing chamber where the developer is sprayed is saturated in advance with the vapor of the developer to prevent evaporation.
As described in Japanese Patent No. 8-68749, it has been proposed to attach a device for compensating for temperature gradients to a rotating chuck that holds a substrate.
これらの提案は、それなりの効果を有するものではある
が、近年、生産性向上の目的で、基板寸法が大型化する
傾向があり、そのため、基板の中心部と周縁部との速度
差が一層大きくなり、また、基板の中心部に処理液の供
給を開始してから、全面に均一に供給し終るまでの時間
が長くかかるようになっている。Although these proposals have certain effects, in recent years there has been a tendency for board dimensions to increase in order to improve productivity, and as a result, the speed difference between the center and peripheral parts of the board has become even larger. Moreover, it takes a long time from when the processing liquid starts to be supplied to the center of the substrate until it is evenly supplied to the entire surface.
そのため、処理液を、基板面積の増加量以上に大量に供
給しなければ、均一に供給状態が得られないという現像
が生じ、処理液及び作業時間のムダが多くなっている。Therefore, unless the processing liquid is supplied in a large amount greater than the increase in the substrate area, a uniform supply state cannot be obtained during development, resulting in a lot of wasted processing liquid and working time.
本発明は、基板をその待機位置から回転処理部へ搬送す
る径路中に、基板面へ処理液を供給する手段を配設して
、基板面にあらかじめ処理液を供給し、基板が回転処理
部に到達したときには、既にその表面全体に処理液の層
が形成されているようにし、その状態の基板を回転処理
部のチャックに装着して、通常の処理に準じて回転させ
、処理液を供給し、処理を行うようにしたことを特徴と
するものである。The present invention provides means for supplying processing liquid to the substrate surface in a path for transporting the substrate from its standby position to the rotation processing section, and supplies the processing liquid to the substrate surface in advance so that the substrate is transferred to the rotation processing section. When this point is reached, a layer of processing liquid has already been formed on the entire surface, and the substrate in this state is mounted on the chuck of the rotating processing unit, rotated as in normal processing, and processing liquid is supplied. It is characterized in that it performs processing.
基板の搬送径路中で、処理液を供給する手段は、スプレ
ィ散布型ノズルでもよいが、好ましくは、スリット状ノ
ズルから膜状に処理液を流下させ、基板をその流下液膜
を横切るように水平方向に移送する手段が適当である。The means for supplying the processing liquid in the substrate transport path may be a spray nozzle, but preferably the processing liquid is caused to flow down in a film form from a slit-shaped nozzle, and the substrate is horizontally moved across the falling liquid film. Means for transporting in this direction are suitable.
第１図は１本発明の装置の一実施例の要部を示す斜視図
である。FIG. 1 is a perspective view showing essential parts of an embodiment of the apparatus of the present invention.
各１対の駆動プーリ（６）と従動プーリ（７）とに、側
方に並ぶ１対の無端ベルト（２）を架装し、被処理基板
（１）を、矢印Ａの方向から無端ベルト（２）の上に送
りこみ、回転チャック（３）の直上に移送する。 回転
チャック（３）は、たとえば第２図示の如く、無端ベル
ト（２）の上面より低い位置から高い位置まで昇降しう
るようになっており、ベルト面より低い位置に沈下させ
た状態で、被処理基板（１）をその直上まで移送して停
止させ、回転チャック（３）を上昇させて基板（１）を
保持し、次いで、さらに上昇させて、基板（１）をベル
ト（２）から浮かせて回転させ、処理液スプレーノズル
（５）から処理液を噴射して、所要の処理を行う。A pair of endless belts (2) arranged side by side are attached to each pair of drive pulleys (6) and driven pulleys (7), and the substrate to be processed (1) is transported from the direction of arrow A using the endless belts. (2) and transfer it directly above the rotating chuck (3). For example, as shown in the second figure, the rotary chuck (3) can move up and down from a position lower than the upper surface of the endless belt (2) to a position higher than the top surface of the endless belt (2). The substrate (1) to be processed is transferred to just above it and stopped, the rotating chuck (3) is raised to hold the substrate (1), and then raised further to lift the substrate (1) off the belt (2). The processing liquid is sprayed from the processing liquid spray nozzle (5) to perform the required processing.
第２図示の実施例では、回転チャック（３）に対する基
板（１）の位置を決めるため、チャックへノド（１２）
の上面に、高低者１対の停止ピン（１０）と保持ピン（
１１）を立設し、その内側に基板（１）を保持する。In the embodiment shown in the second figure, in order to position the substrate (1) with respect to the rotating chuck (3), a slot (12) is inserted into the chuck.
A pair of high and low stop pins (10) and a retaining pin (
11) is set upright, and the substrate (1) is held inside thereof.
基板（１）の装着に際しては、高い方の停止ピン（１０
）を、基板が進入してくる方向と逆側に位置させ、この
停止ピン（１０）だけが、ベルト上面より高くなる位置
まで上昇させておき、基板（１）を送りこむ。基板（１
）は、停止ピン（１０）に当接する位置まで送られて停
止するので１回転チャック（３）を再度上昇させて、基
板（１）を保持ピン（１１）の内側に保持し、回転処理
を行う。なお、回転チャックは、真空吸着式チャックで
もよい。When installing the board (1), use the higher stop pin (10
) is positioned on the opposite side to the direction in which the board is coming in, and the stop pin (10) is raised to a position where only this stop pin (10) is higher than the top surface of the belt, and then the board (1) is fed. Substrate (1
) is sent to the position where it contacts the stop pin (10) and stops, so the one-turn chuck (3) is raised again, the substrate (1) is held inside the holding pin (11), and the rotation process is performed. conduct. Note that the rotary chuck may be a vacuum suction type chuck.
上述の回転チャックに関する説明は、本発明の背景に関
するものであり、本発明の主体は、以下の述べる処理液
前塗布手段にある。The above explanation regarding the rotary chuck is related to the background of the present invention, and the main subject of the present invention lies in the treatment liquid pre-coating means described below.
第１図示の如く、回転チャック（３）に向かって基板（
１）が移送される径路の上方に、基板（１）の移送方向
と直交する下向きの偏平な液吐出孔を有するノズル（４
）を配置し、基板（１）の径路を横切って処理液を膜状
に流下させ、移送される基Ｆｉ（１）が、処理液膜（１
３）を通過するように構成する。As shown in the first diagram, the substrate (
Above the path through which the substrate (1) is transferred, a nozzle (4
), the processing liquid is allowed to flow down in a film across the path of the substrate (1), and the group Fi (1) to be transferred flows into the processing liquid film (1
3).
流下した処理液は、図示しない下方の容器に収容され、
やはり図示しないポンプ装置により、ノズル（４）に還
流される。The processing liquid that has flowed down is stored in a lower container (not shown),
The water is refluxed to the nozzle (4) by a pump device, also not shown.
基板（１）の移送径路の処理液膜（１３）の流下部より
手前の適宜の個所に、移送される基板（１）を検知して
、上記ポンプ装置を起動する基板検出手段（８）を配設
する。A substrate detection means (8) for detecting the substrate (1) to be transferred and activating the pump device is provided at an appropriate location in the transfer path of the substrate (1) before the downstream part of the processing liquid film (13). Arrange.
これは、たとえばフォトセンサと光源を組合わせたユニ
ットを、第１図示の如く無端ベルト（２）の下方に設置
し、上方へ光を投射して、直上を基板（１）が通過する
際に、その反射光を受光して、ポンプ装置を起動する信
号を発生させるようにすればよい。なお、第１図では、
液膜の流下位置と基板検出手段との位置が１図面のスペ
ースの関係で、比較的近接して示しであるが、処理液の
飛沫による汚損を防ぐため、なるべく離間させておくこ
とが望ましい。For example, a unit that combines a photosensor and a light source is installed below the endless belt (2) as shown in the first diagram, and the light is projected upward so that when the substrate (1) passes directly above it, , the reflected light may be received to generate a signal for starting the pump device. In addition, in Figure 1,
Although the downstream position of the liquid film and the position of the substrate detection means are shown relatively close due to the space in one drawing, it is desirable to keep them as far apart as possible to prevent contamination due to splashes of the processing liquid.
また、装置の設置場所がせまく、基板の移送径路を充分
に長くできず、したがって、液膜流下部に近い個所で検
出する必要がある場合は、光源とフォトセンサを分離し
て、それぞれ、基板通過位置から必要距離遠去かった位
置に設置するようにしてもよい。In addition, if the installation space of the device is small and the substrate transfer path cannot be made sufficiently long, and therefore detection needs to be performed near the bottom of the liquid film flow, the light source and photosensor may be separated and It may be installed at a position that is a required distance away from the passing position.
この場合、基板の検出は、必ずしも通過時に基板面で反
射する光束を、フォトセンサで受光する手段に限らず、
光源からの光束を、常時フォトセンサに受光させておき
、基板が通過する際に、光束を遮断して、フォトセンサ
の出力が低下することで検知するようにしてもよい。In this case, the detection of the substrate is not necessarily limited to the means of receiving the light beam reflected on the substrate surface when passing through with a photosensor.
The light flux from the light source may be constantly received by the photosensor, and when the substrate passes, the light flux may be blocked and the output of the photosensor may be lowered to detect the detection.
かくして、偏平ノズル（４）から流下するカーテン状処
理液膜（３）を通過して、処理液を供給された基板（１
）を、回転チャック（３）に装着し、回転させながら、
その上方のスプレーノズル（５）から処理液を散布して
処理を行う。In this way, the substrate (1) supplied with the processing liquid passes through the curtain-like processing liquid film (3) flowing down from the flat nozzle (4).
) on the rotating chuck (3) and while rotating it,
The treatment is carried out by spraying the treatment liquid from the spray nozzle (5) above it.
この場合、冒頭に問題点として述べたスプレーされる液
滴の大きさの差や、基板の中心部と周縁部との周速の差
などに基〈処理ムラは、はとんど影響がない。その理由
は、これらの要因に基く処理ムラの問題は、処理液工程
の最初期、すなわち、基板面が最初に処理液に接触した
時期に最も顕著に発生し、ある程度処理が進行した後に
は、あまり影響がないからである。In this case, due to the difference in the size of the sprayed droplets and the difference in circumferential speed between the center and periphery of the substrate, which were mentioned as problems at the beginning, processing unevenness has almost no effect. . The reason for this is that the problem of processing unevenness based on these factors occurs most prominently at the very beginning of the processing liquid process, that is, when the substrate surface first comes into contact with the processing liquid, and after the processing has progressed to a certain extent. This is because it does not have much influence.
なお、偏平ノズル（４）により供給される処理液を、基
板面により均一に塗布するために、偏平ノズル（４）の
前段に、水又は水で稀釈した処理液を基板面に塗布して
おくことも有効である。この塗布には、たとえば（４）
と同様な偏平ノズルを使用すればよい。In addition, in order to apply the processing liquid supplied by the flat nozzle (4) more uniformly to the substrate surface, water or a processing liquid diluted with water is applied to the substrate surface before the flat nozzle (4). It is also effective. For this application, for example (4)
A flat nozzle similar to the above may be used.
本発明によれば、基板に最初に供給される処理液は、従
来装置におけるスプレー散布による粒滴状ではなく、連
続しだ液膜状であり、かつ比較的ゆるやかな速度で基板
面に当接し、また基板自体の速度も、無端ベルトによる
移送は１回転チャックにより与えられる周速度よりも、
はるかに低速であって、基板面に加わる衝撃は、通常の
回転処理におけるよりもきわめて小さく、フォトレジス
ト膜を損傷するおそれは、全くない。According to the present invention, the processing liquid initially supplied to the substrate is not in the form of droplets caused by spraying as in conventional devices, but in the form of a continuous dripping film, and contacts the substrate surface at a relatively slow speed. , and the speed of the substrate itself, when transported by an endless belt, is faster than the circumferential speed given by a one-turn chuck.
The speed is much lower, the impact on the substrate surface is much smaller than in normal rotational processing, and there is no risk of damaging the photoresist film.
また、偏平ノズルから流下する処理液は、カーテン状に
連続した処理液膜を形成するため、スプレーにより小さ
な液粒として散布される場合に比し、空気に触れる面積
がはるかに小さく、気化蒸発量もごく僅かである。In addition, since the processing liquid flowing down from the flat nozzle forms a continuous curtain-like film, the area in contact with the air is much smaller than when it is sprayed as small droplets, and the amount of evaporation is much smaller. There are also very few.
したがって、冒頭に従来手段における問題点として記述
した気化熱による処理温度の低下や、処理液の組成変化
といった問題が発生せず、とくにこれらの問題点が処理
ムラの要因となる処理工程の初期において、これらの発
生を抑制できるため、実用上きわめて有効である。Therefore, problems such as a decrease in the processing temperature due to heat of vaporization and a change in the composition of the processing solution, which were described as problems with conventional methods at the beginning, do not occur, especially at the beginning of the processing process when these problems cause processing unevenness. , since these occurrences can be suppressed, it is extremely effective in practice.
第１図は、本発明の装置の一実施例の要部を示す斜視図
、
第２図は、回転チャックの一実施例を示す斜視図である
。FIG. 1 is a perspective view showing a main part of an embodiment of the apparatus of the present invention, and FIG. 2 is a perspective view showing an embodiment of a rotary chuck.
Claims (7)
ら、その表面に処理液を供給して処理を行う基板表面処
理方法において、前記被処理基板を前記回転処理部へ搬
送する径路中において、基板面に前記処理液を供給し、
あらかじめ基板面に処理液の液層を形成した液、該基板
を回転処理部に装着して、処理を行うことを特徴とする
基板表面処理方法。(1) In a substrate surface treatment method in which a processing liquid is supplied to the surface of a substrate to be processed while the substrate is mounted on a rotational processing section and rotated, a path for transporting the substrate to be processed to the rotational processing section is provided. , supplying the processing liquid to the substrate surface,
1. A substrate surface treatment method comprising: forming a liquid layer of a treatment liquid on a substrate surface in advance; and mounting the substrate on a rotating treatment section to perform treatment.
囲第（１）項に記載の基板表面処理方法。(2) The substrate surface treatment method according to claim (1), wherein the substrate to be processed is a semiconductor wafer.
項または第（２）項に記載の基板表面処理方法。(3) Claim No. (1) in which the processing liquid is a developer.
Substrate surface treatment method according to item or item (2).
項または第（２）項に記載の基板表面処理方法。(4) Claim No. (1) in which the treatment liquid is a corrosive liquid.
Substrate surface treatment method according to item or item (2).
ことを特徴とする特許請求の範囲第（１）項乃至第（４
）項のいずれかに記載の方法。(5) Claims (1) to (4) characterized in that the processing liquid is supplied by flowing down in the form of a curtain.
) The method described in any of the above.
供給して表面処理を行う回転処理装置と、該回転処理装
置へ前記基板を搬送する搬送手段と、該搬送手段の基板
搬送路の適所上方に配設され、通過する基板面に前記処
理液と実質的に同質の処理液を供給する液供給装置とを
備えてなる基板表面処理装置。(6) A rotary processing device that holds and rotates a substrate to be processed and performs surface treatment by supplying a required processing liquid, a transport means for transporting the substrate to the rotary processing device, and a substrate transporting means for the transport means. 1. A substrate surface processing apparatus comprising: a liquid supply device disposed above a passageway and supplying a processing liquid of substantially the same quality as the processing liquid to the surface of the substrate passing through.
偏平状ノズルであることを特徴とする特許請求の範囲第
（６）項に記載の基板表面処理装置。(7) The substrate surface treatment apparatus according to claim (6), wherein the liquid supply device is a flat nozzle that causes the treatment liquid to flow down in a curtain shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18657684A JPS6165435A (en) | 1984-09-07 | 1984-09-07 | Method of substrate surface treatment and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18657684A JPS6165435A (en) | 1984-09-07 | 1984-09-07 | Method of substrate surface treatment and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6165435A true JPS6165435A (en) | 1986-04-04 |
Family
ID=16190953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18657684A Pending JPS6165435A (en) | 1984-09-07 | 1984-09-07 | Method of substrate surface treatment and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6165435A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308337A (en) * | 1987-06-10 | 1988-12-15 | Teru Kyushu Kk | Spinner |
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| JPH01253235A (en) * | 1988-03-31 | 1989-10-09 | Sigma Gijutsu Kogyo Kk | Method and device for substrate treatment |
| US6423139B1 (en) | 1997-09-16 | 2002-07-23 | Tokyo Ohka Kogyo Co., Ltd. | Chemical liquid treatment apparatus |
| US7150101B2 (en) * | 2003-12-15 | 2006-12-19 | General Electric Company | Apparatus for fabricating components |
| US8455040B2 (en) | 2004-12-28 | 2013-06-04 | Lg Display Co., Ltd. | Slit coater having apparatus for supplying a coater solution |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192955A (en) * | 1981-05-25 | 1982-11-27 | Toppan Printing Co Ltd | Developing method |
| JPS5963726A (en) * | 1982-10-05 | 1984-04-11 | Toshiba Corp | Device for developing photo resist |
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
-
1984
- 1984-09-07 JP JP18657684A patent/JPS6165435A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192955A (en) * | 1981-05-25 | 1982-11-27 | Toppan Printing Co Ltd | Developing method |
| JPS5963726A (en) * | 1982-10-05 | 1984-04-11 | Toshiba Corp | Device for developing photo resist |
| JPS59126633A (en) * | 1983-01-10 | 1984-07-21 | Mitsubishi Electric Corp | Device for processing semiconductor wafer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308337A (en) * | 1987-06-10 | 1988-12-15 | Teru Kyushu Kk | Spinner |
| JPH01170023A (en) * | 1987-12-25 | 1989-07-05 | Casio Comput Co Ltd | Photoresist developing device |
| JPH01253235A (en) * | 1988-03-31 | 1989-10-09 | Sigma Gijutsu Kogyo Kk | Method and device for substrate treatment |
| US6423139B1 (en) | 1997-09-16 | 2002-07-23 | Tokyo Ohka Kogyo Co., Ltd. | Chemical liquid treatment apparatus |
| US7150101B2 (en) * | 2003-12-15 | 2006-12-19 | General Electric Company | Apparatus for fabricating components |
| US8455040B2 (en) | 2004-12-28 | 2013-06-04 | Lg Display Co., Ltd. | Slit coater having apparatus for supplying a coater solution |
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