JPH085565Y2 - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JPH085565Y2
JPH085565Y2 JP1990119574U JP11957490U JPH085565Y2 JP H085565 Y2 JPH085565 Y2 JP H085565Y2 JP 1990119574 U JP1990119574 U JP 1990119574U JP 11957490 U JP11957490 U JP 11957490U JP H085565 Y2 JPH085565 Y2 JP H085565Y2
Authority
JP
Japan
Prior art keywords
gate
diffusion layer
bit line
mask
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1990119574U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476058U (enrdf_load_stackoverflow
Inventor
良行 石塚
英明 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1990119574U priority Critical patent/JPH085565Y2/ja
Publication of JPH0476058U publication Critical patent/JPH0476058U/ja
Application granted granted Critical
Publication of JPH085565Y2 publication Critical patent/JPH085565Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP1990119574U 1990-11-14 1990-11-14 半導体メモリ Expired - Lifetime JPH085565Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990119574U JPH085565Y2 (ja) 1990-11-14 1990-11-14 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990119574U JPH085565Y2 (ja) 1990-11-14 1990-11-14 半導体メモリ

Publications (2)

Publication Number Publication Date
JPH0476058U JPH0476058U (enrdf_load_stackoverflow) 1992-07-02
JPH085565Y2 true JPH085565Y2 (ja) 1996-02-14

Family

ID=31867522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990119574U Expired - Lifetime JPH085565Y2 (ja) 1990-11-14 1990-11-14 半導体メモリ

Country Status (1)

Country Link
JP (1) JPH085565Y2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291384B1 (ko) * 1998-12-31 2001-07-12 윤종용 반도체장치의레이아웃방법

Also Published As

Publication number Publication date
JPH0476058U (enrdf_load_stackoverflow) 1992-07-02

Similar Documents

Publication Publication Date Title
JP2884962B2 (ja) 半導体メモリ
US5815428A (en) Semiconductor memory device having hierarchical bit line structure
KR100734982B1 (ko) 스태틱 메모리 셀 제조방법
US6094390A (en) Semiconductor memory device with column gate and equalizer circuitry
JPH085565Y2 (ja) 半導体メモリ
JP2000031420A (ja) 半導体メモリ素子
JP3940495B2 (ja) Ｓｒａｍセルの構造及びその製造方法
US4117545A (en) Memory including dummy cells
JPH10200064A (ja) 半導体メモリ・デバイス
JP2000500927A (ja) スタティック・メモリセル
JP4591809B2 (ja) 微細化に対応したメモリアレイ領域のレイアウト方法
JP2002343939A (ja) 半導体メモリ素子におけるセンスアンプレイアウト方法及びこれを用いる半導体メモリ素子
JPS62145862A (ja) 半導体記憶装置
JPH0982910A (ja) 半導体記憶装置
JP2609727B2 (ja) 半導体集積回路
JP3612276B2 (ja) ダイナミック型半導体記憶装置
JPH11274437A (ja) 不揮発性半導体メモリ装置
JPH05291521A (ja) 半導体装置の製造方法
JP2770348B2 (ja) 半導体記憶装置
JPH02106966A (ja) 半導体記憶装置
JPS5942395B2 (ja) 半導体メモリ
JP2975826B2 (ja) 不揮発性半導体メモリ装置及びその製造方法
KR101009351B1 (ko) 반도체 장치 및 그의 레이아웃 방법
JPS59188889A (ja) 半導体メモリ
JPH03142875A (ja) 半導体記憶装置