JPH08510350A - 入力消去安定化メモリ要素 - Google Patents
入力消去安定化メモリ要素Info
- Publication number
- JPH08510350A JPH08510350A JP6525121A JP52512194A JPH08510350A JP H08510350 A JPH08510350 A JP H08510350A JP 6525121 A JP6525121 A JP 6525121A JP 52512194 A JP52512194 A JP 52512194A JP H08510350 A JPH08510350 A JP H08510350A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- memory element
- base
- contactor
- bridging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/50—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using actuation of electric contacts to store the information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/64—Protective enclosures, baffle plates, or screens for contacts
- H01H1/66—Contacts sealed in an evacuated or gas-filled envelope, e.g. magnetic dry-reed contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0036—Movable armature with higher resonant frequency for faster switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0063—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stepped actuation, e.g. actuation voltages applied to different sets of electrodes at different times or different spring constants during actuation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Manufacture Of Switches (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.導電性材料から作られるベース接触子と、 導電性材料から作られ、1つは前記ベース接触子に接触し、他の1つは前記 ベース接触子から隔離されている2つの安定位置を有するような寸法取りをされ てなる橋絡接触子と、 前記橋絡接触子を1方の安定位置から他方の安定位置に偏倚させるための偏 倚手段と、 を備える入力消去安定化メモリ要素。 2.前記接触子と偏倚手段とが写真製版、化学沈積、スパッタリング及び金属蒸 着のいづれかで形成されてなる、請求項1に記載した入力消去安定化メモリ要素 。 3.前記橋絡接触子が支持材によってベース層に取付けられる固定端を有する片 持ち梁に作られて片寄せ層によって2つの安定位置の中の1つ位置にバイアス掛 けされてなる、請求項1及び2のいづれかに記載した入力消去安定化メモリ要素 。 4.前記偏倚手段が、前記ベース接触子及び橋絡接触子からは電気的に絶縁され て静電力によって前記橋絡接触子を順次前記ベース接触子の方へ引寄せたり前記 ベース接触子から偏倚させたりする動作をなす1対の電極を備えてなる、請求項 1及び2のいづれかに記載した入力消去安定化メモリ要素。 5.前記橋絡接触子の上下両方の偏倚手段を更に包含してなる、前記請求項のい づれかに記載した入力消去安定化メモ リ要素。 6.前記要素が相対破壊電圧の高いガスの雰囲気内に納められてなる、前記請求 項のいづれかに記載した入力消去安定化メモリ要素。 7.前記ガスがオクタフルオルプロパンである、請求項6に記載した入力消去安 定化メモリ要素。 8.前記橋絡接触子が少なくとも非支持長の部分を横切る方向で強化されてなる 、前記請求項のいづれかに記載した入力消去安定化メモリ要素。 9.前記強化が前記橋絡接触子表面上の波形形状によって提供されてなる、請求 項8に記載した入力消去安定化メモリ要素。 10.前記強化が前記橋絡接触子表面上の追加層によって提供されてなる、請求項 8に記載した入力消去安定化メモリ要素。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939309327A GB9309327D0 (en) | 1993-05-06 | 1993-05-06 | Bi-stable memory element |
GB9309327.6 | 1993-05-06 | ||
PCT/GB1994/000977 WO1994027308A1 (en) | 1993-05-06 | 1994-05-06 | Bi-stable memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08510350A true JPH08510350A (ja) | 1996-10-29 |
JP3627108B2 JP3627108B2 (ja) | 2005-03-09 |
Family
ID=10735025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52512194A Expired - Fee Related JP3627108B2 (ja) | 1993-05-06 | 1994-05-06 | 入力消去安定化メモリ要素 |
Country Status (9)
Country | Link |
---|---|
US (1) | US5677823A (ja) |
EP (1) | EP0698279B1 (ja) |
JP (1) | JP3627108B2 (ja) |
AT (1) | ATE160645T1 (ja) |
CA (1) | CA2161340A1 (ja) |
DE (1) | DE69407040T2 (ja) |
ES (1) | ES2111302T3 (ja) |
GB (1) | GB9309327D0 (ja) |
WO (1) | WO1994027308A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005514784A (ja) * | 2001-12-28 | 2005-05-19 | ナンテロ,インク. | 電気機械式3トレースジャンクション装置 |
JP2005537616A (ja) * | 2002-08-29 | 2005-12-08 | インテル・コーポレーション | 高信頼度の対向接触構造およびその製造技術 |
JP2007158332A (ja) * | 2005-12-01 | 2007-06-21 | Internatl Business Mach Corp <Ibm> | メモリ構造体およびメモリ構造体動作方法 |
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- 1993-05-06 GB GB939309327A patent/GB9309327D0/en active Pending
-
1994
- 1994-05-06 ES ES94914474T patent/ES2111302T3/es not_active Expired - Lifetime
- 1994-05-06 DE DE69407040T patent/DE69407040T2/de not_active Expired - Lifetime
- 1994-05-06 AT AT94914474T patent/ATE160645T1/de not_active IP Right Cessation
- 1994-05-06 JP JP52512194A patent/JP3627108B2/ja not_active Expired - Fee Related
- 1994-05-06 WO PCT/GB1994/000977 patent/WO1994027308A1/en active IP Right Grant
- 1994-05-06 CA CA002161340A patent/CA2161340A1/en not_active Abandoned
- 1994-05-06 US US08/549,697 patent/US5677823A/en not_active Expired - Lifetime
- 1994-05-06 EP EP94914474A patent/EP0698279B1/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005514784A (ja) * | 2001-12-28 | 2005-05-19 | ナンテロ,インク. | 電気機械式3トレースジャンクション装置 |
JP4643145B2 (ja) * | 2001-12-28 | 2011-03-02 | ナンテロ,インク. | 電気機械式3トレースジャンクション装置 |
JP2005537616A (ja) * | 2002-08-29 | 2005-12-08 | インテル・コーポレーション | 高信頼度の対向接触構造およびその製造技術 |
JP2007158332A (ja) * | 2005-12-01 | 2007-06-21 | Internatl Business Mach Corp <Ibm> | メモリ構造体およびメモリ構造体動作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0698279A1 (en) | 1996-02-28 |
WO1994027308A1 (en) | 1994-11-24 |
US5677823A (en) | 1997-10-14 |
ES2111302T3 (es) | 1998-03-01 |
ATE160645T1 (de) | 1997-12-15 |
DE69407040D1 (de) | 1998-01-08 |
GB9309327D0 (en) | 1993-06-23 |
DE69407040T2 (de) | 1998-04-16 |
EP0698279B1 (en) | 1997-11-26 |
JP3627108B2 (ja) | 2005-03-09 |
CA2161340A1 (en) | 1994-11-24 |
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