SG10201408568QA - Memory cell and method of manufacturing a memory cell - Google Patents

Memory cell and method of manufacturing a memory cell

Info

Publication number
SG10201408568QA
SG10201408568QA SG10201408568QA SG10201408568QA SG10201408568QA SG 10201408568Q A SG10201408568Q A SG 10201408568QA SG 10201408568Q A SG10201408568Q A SG 10201408568QA SG 10201408568Q A SG10201408568Q A SG 10201408568QA SG 10201408568Q A SG10201408568Q A SG 10201408568QA
Authority
SG
Singapore
Prior art keywords
memory cell
manufacturing
cell
memory
Prior art date
Application number
SG10201408568QA
Inventor
Vincent Pott
Navab Singh
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG10201408568QA priority Critical patent/SG10201408568QA/en
Publication of SG10201408568QA publication Critical patent/SG10201408568QA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
SG10201408568QA 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell SG10201408568QA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG10201408568QA SG10201408568QA (en) 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG2011046802 2011-06-24
SG10201408568QA SG10201408568QA (en) 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell

Publications (1)

Publication Number Publication Date
SG10201408568QA true SG10201408568QA (en) 2015-02-27

Family

ID=55167873

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012046496A SG186576A1 (en) 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell
SG10201408568QA SG10201408568QA (en) 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012046496A SG186576A1 (en) 2011-06-24 2012-06-22 Memory cell and method of manufacturing a memory cell

Country Status (2)

Country Link
US (1) US9165932B2 (en)
SG (2) SG186576A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600078454A1 (en) * 2016-07-26 2018-01-26 St Microelectronics Srl MICROELETTROMECHANICAL DEVICE, CAN BE USED AS A NON-VOLATILE MEMORY OR RELAY MODULE, AND MEMORY INCLUDING A PLURALITY OF MICROELECTROMECHANICAL DEVICES
AU2021347156B2 (en) * 2020-09-25 2023-05-25 Cbn Nano Technologies Inc. Efficient and manufacturable mechanical computing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9309327D0 (en) 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6473361B1 (en) 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
US6882256B1 (en) 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
JP4484778B2 (en) * 2005-07-08 2010-06-16 富士フイルム株式会社 Small thin film movable element, small thin film movable element array, and driving method of small thin film movable element
KR100834829B1 (en) * 2006-12-19 2008-06-03 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
US7626237B1 (en) 2007-06-26 2009-12-01 Emc Corporation Non-volatile MEMS memory cell and method of forming such memory cell
FR2918794B1 (en) 2007-07-09 2010-04-30 Commissariat Energie Atomique NON-VOLATILE SRAM MEMORY CELL HAVING MOBILE GRID TRANSISTORS AND PIEZOELECTRIC ACTUATION.

Also Published As

Publication number Publication date
SG186576A1 (en) 2013-01-30
US9165932B2 (en) 2015-10-20
US20130020631A1 (en) 2013-01-24

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