JPH08330525A - 半導体素子と集積回路 - Google Patents

半導体素子と集積回路

Info

Publication number
JPH08330525A
JPH08330525A JP8136203A JP13620396A JPH08330525A JP H08330525 A JPH08330525 A JP H08330525A JP 8136203 A JP8136203 A JP 8136203A JP 13620396 A JP13620396 A JP 13620396A JP H08330525 A JPH08330525 A JP H08330525A
Authority
JP
Japan
Prior art keywords
conductive plate
bonding pad
semiconductor substrate
capacitor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8136203A
Other languages
English (en)
Japanese (ja)
Inventor
Thaddeus John Gabara
ジョン ガバラ タッデュス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Inc filed Critical AT&T Inc
Publication of JPH08330525A publication Critical patent/JPH08330525A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
JP8136203A 1995-05-30 1996-05-30 半導体素子と集積回路 Pending JPH08330525A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45404995A 1995-05-30 1995-05-30
US454049 1995-05-30

Publications (1)

Publication Number Publication Date
JPH08330525A true JPH08330525A (ja) 1996-12-13

Family

ID=23803086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8136203A Pending JPH08330525A (ja) 1995-05-30 1996-05-30 半導体素子と集積回路

Country Status (4)

Country Link
EP (1) EP0746024A3 (enExample)
JP (1) JPH08330525A (enExample)
KR (1) KR960043151A (enExample)
TW (1) TW291595B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229632A (ja) * 2013-05-17 2014-12-08 住友電気工業株式会社 半導体装置
JPWO2014021358A1 (ja) * 2012-08-02 2016-07-21 株式会社堀場製作所 増幅器及び放射線検出器
JP2018137828A (ja) * 2011-05-19 2018-08-30 オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド 電荷検出増幅器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167827A (ja) * 1995-12-14 1997-06-24 Tokai Rika Co Ltd 半導体装置
KR19990072936A (ko) 1998-02-27 1999-09-27 가나이 쓰도무 아이솔레이터및그것을사용하는모뎀장치
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치
FR2925980B1 (fr) * 2007-12-28 2010-06-04 St Microelectronics Sa Plot de contact electrique

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134951A (ja) * 1984-07-26 1986-02-19 Toshiba Corp 半導体装置の容量評価用モニタ部
JPS63184358A (ja) * 1987-01-27 1988-07-29 Oki Electric Ind Co Ltd 半導体集積回路
JPH02304963A (ja) * 1989-05-19 1990-12-18 Nec Corp 半導体集積回路装置
FR2714528B1 (fr) * 1993-12-27 1996-03-15 Sgs Thomson Microelectronics Structure de test de circuit intégré.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018137828A (ja) * 2011-05-19 2018-08-30 オックスフォード インストルメンツ ナノテクノロジー ツールス リミテッド 電荷検出増幅器
JPWO2014021358A1 (ja) * 2012-08-02 2016-07-21 株式会社堀場製作所 増幅器及び放射線検出器
US20180006613A1 (en) 2012-08-02 2018-01-04 Horiba, Ltd. Amplifier and radiation detector
US10554178B2 (en) 2012-08-02 2020-02-04 Horiba, Ltd. Amplifier and radiation detector
JP2014229632A (ja) * 2013-05-17 2014-12-08 住友電気工業株式会社 半導体装置

Also Published As

Publication number Publication date
EP0746024A3 (en) 1997-03-26
TW291595B (enExample) 1996-11-21
EP0746024A2 (en) 1996-12-04
KR960043151A (ko) 1996-12-23

Similar Documents

Publication Publication Date Title
US6790704B2 (en) Method for capacitively coupling electronic devices
US8299572B2 (en) Semiconductor die with backside passive device integration
US20050101116A1 (en) Integrated circuit device and the manufacturing method thereof
US8049331B2 (en) Structure and method for forming a capacitively coupled chip-to-chip signaling interface
US20030173637A1 (en) Semiconductor device having a wire bond pad and method therefor
EP0981157A3 (en) Circuitry and method of forming the same
JPH02184054A (ja) ハイブリッド型樹脂封止半導体装置
US4782381A (en) Chip carrier
US20040245651A1 (en) Semiconductor device and method for fabricating the same
JPH0529483A (ja) 半導体集積装置
EP0746024A2 (en) Semiconductor device with built-in AC coupling circuitry
JP5001163B2 (ja) 集積回路のパッケージング及び製造
US20020055246A1 (en) Method and apparatus for reducing substrate bias voltage drop
JP2002026230A (ja) 半導体装置
US10840179B2 (en) Electronic devices with bond pads formed on a molybdenum layer
US6094114A (en) Slotline-to-slotline mounted flip chip
CN115312493B (zh) 半导体结构及其形成方法
JP2982441B2 (ja) マイクロ波モノリシック集積回路
US20250112184A1 (en) Semiconductor device and method for fabricating the same
JP2559102B2 (ja) 半導体装置
JP2000286295A (ja) 半導体装置の接合構造
JP2001217373A (ja) 半導体装置の製造方法および半導体ユニットの製造方法ならびに半導体装置および半導体ユニット
JPH09232500A (ja) マルチチップ半導体装置
JPS61180470A (ja) 半導体集積回路装置
JPS6231133A (ja) 半導体装置