JPH0748669Y2 - 分子線セル - Google Patents
分子線セルInfo
- Publication number
- JPH0748669Y2 JPH0748669Y2 JP1989100220U JP10022089U JPH0748669Y2 JP H0748669 Y2 JPH0748669 Y2 JP H0748669Y2 JP 1989100220 U JP1989100220 U JP 1989100220U JP 10022089 U JP10022089 U JP 10022089U JP H0748669 Y2 JPH0748669 Y2 JP H0748669Y2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crucible
- molecular beam
- graphite layer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 229910002804 graphite Inorganic materials 0.000 claims description 26
- 239000010439 graphite Substances 0.000 claims description 26
- 239000002994 raw material Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989100220U JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989100220U JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0338367U JPH0338367U (enrdf_load_stackoverflow) | 1991-04-12 |
| JPH0748669Y2 true JPH0748669Y2 (ja) | 1995-11-08 |
Family
ID=31649239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989100220U Expired - Fee Related JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748669Y2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959733B1 (ko) * | 2003-04-16 | 2010-05-25 | 독키 가부시키가이샤 | 증착장치에 있어서의 증발원 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60200895A (ja) * | 1984-03-23 | 1985-10-11 | Agency Of Ind Science & Technol | 分子線結晶成長装置の噴出セル構造 |
| JPS62244122A (ja) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | 化合物半導体薄膜の製造装置 |
-
1989
- 1989-08-28 JP JP1989100220U patent/JPH0748669Y2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959733B1 (ko) * | 2003-04-16 | 2010-05-25 | 독키 가부시키가이샤 | 증착장치에 있어서의 증발원 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0338367U (enrdf_load_stackoverflow) | 1991-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |