JPH0338367U - - Google Patents
Info
- Publication number
- JPH0338367U JPH0338367U JP10022089U JP10022089U JPH0338367U JP H0338367 U JPH0338367 U JP H0338367U JP 10022089 U JP10022089 U JP 10022089U JP 10022089 U JP10022089 U JP 10022089U JP H0338367 U JPH0338367 U JP H0338367U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crucible
- graphite layer
- applying
- upper opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989100220U JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989100220U JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0338367U true JPH0338367U (enrdf_load_stackoverflow) | 1991-04-12 |
JPH0748669Y2 JPH0748669Y2 (ja) | 1995-11-08 |
Family
ID=31649239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1989100220U Expired - Fee Related JPH0748669Y2 (ja) | 1989-08-28 | 1989-08-28 | 分子線セル |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0748669Y2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004315898A (ja) * | 2003-04-16 | 2004-11-11 | Tokki Corp | 蒸着装置における蒸発源 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200895A (ja) * | 1984-03-23 | 1985-10-11 | Agency Of Ind Science & Technol | 分子線結晶成長装置の噴出セル構造 |
JPS62244122A (ja) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | 化合物半導体薄膜の製造装置 |
-
1989
- 1989-08-28 JP JP1989100220U patent/JPH0748669Y2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200895A (ja) * | 1984-03-23 | 1985-10-11 | Agency Of Ind Science & Technol | 分子線結晶成長装置の噴出セル構造 |
JPS62244122A (ja) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | 化合物半導体薄膜の製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004315898A (ja) * | 2003-04-16 | 2004-11-11 | Tokki Corp | 蒸着装置における蒸発源 |
Also Published As
Publication number | Publication date |
---|---|
JPH0748669Y2 (ja) | 1995-11-08 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |