JPH07221082A - マイクロ構造の平坦化方法 - Google Patents

マイクロ構造の平坦化方法

Info

Publication number
JPH07221082A
JPH07221082A JP6283753A JP28375394A JPH07221082A JP H07221082 A JPH07221082 A JP H07221082A JP 6283753 A JP6283753 A JP 6283753A JP 28375394 A JP28375394 A JP 28375394A JP H07221082 A JPH07221082 A JP H07221082A
Authority
JP
Japan
Prior art keywords
layer
microstructure
thickness
measuring
calculating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6283753A
Other languages
English (en)
Japanese (ja)
Inventor
Peter B Mumola
ピーター・ビー・ムモラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPH07221082A publication Critical patent/JPH07221082A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP6283753A 1993-11-17 1994-11-17 マイクロ構造の平坦化方法 Pending JPH07221082A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/153,681 US5419803A (en) 1993-11-17 1993-11-17 Method of planarizing microstructures
US153681 1998-09-15

Publications (1)

Publication Number Publication Date
JPH07221082A true JPH07221082A (ja) 1995-08-18

Family

ID=22548270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6283753A Pending JPH07221082A (ja) 1993-11-17 1994-11-17 マイクロ構造の平坦化方法

Country Status (6)

Country Link
US (1) US5419803A (enExample)
EP (1) EP0654816A3 (enExample)
JP (1) JPH07221082A (enExample)
IL (1) IL111540A (enExample)
NO (1) NO944384L (enExample)
TW (1) TW308711B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100737379B1 (ko) * 2005-12-06 2007-07-09 한국전자통신연구원 반도체 기판의 평탄화 방법

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
DE102017216358A1 (de) 2017-09-14 2019-03-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bestimmung eines Polarisationszustandes einer elektromagnetischen Welle
CN116045826B (zh) * 2023-01-18 2025-12-05 苏州桐力光电股份有限公司 显示屏贴合胶层的厚度检测方法及显示屏贴合工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120029A (ja) * 1985-11-20 1987-06-01 Sumitomo Electric Ind Ltd エツチバツク平坦化方法
EP0514046A1 (en) * 1991-05-07 1992-11-19 Hughes Aircraft Company System for controlling and executing the etching of a wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108264A (en) * 1980-01-31 1981-08-27 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
FR2599892B1 (fr) * 1986-06-10 1988-08-26 Schiltz Andre Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique
JPH0834198B2 (ja) * 1990-11-28 1996-03-29 信越半導体株式会社 Ｓｏｉ基板における単結晶薄膜層の膜厚制御方法
JPH0645327A (ja) * 1991-01-09 1994-02-18 Nec Corp 半導体装置の製造方法
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5291415A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
KR940008372B1 (ko) * 1992-01-16 1994-09-12 삼성전자 주식회사 반도체 기판의 층간 절연막의 평탄화 방법
US5375064A (en) * 1993-12-02 1994-12-20 Hughes Aircraft Company Method and apparatus for moving a material removal tool with low tool accelerations

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120029A (ja) * 1985-11-20 1987-06-01 Sumitomo Electric Ind Ltd エツチバツク平坦化方法
EP0514046A1 (en) * 1991-05-07 1992-11-19 Hughes Aircraft Company System for controlling and executing the etching of a wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100737379B1 (ko) * 2005-12-06 2007-07-09 한국전자통신연구원 반도체 기판의 평탄화 방법

Also Published As

Publication number Publication date
NO944384D0 (no) 1994-11-16
IL111540A0 (en) 1995-01-24
EP0654816A2 (en) 1995-05-24
EP0654816A3 (en) 1995-11-29
IL111540A (en) 1996-10-31
NO944384L (no) 1995-05-18
US5419803A (en) 1995-05-30
TW308711B (enExample) 1997-06-21

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