JPH07176732A - Ｍｉｓ電界効果型トランジスタの製造方法 - Google Patents

Ｍｉｓ電界効果型トランジスタの製造方法

Info

Publication number
JPH07176732A
JPH07176732A JP6094266A JP9426694A JPH07176732A JP H07176732 A JPH07176732 A JP H07176732A JP 6094266 A JP6094266 A JP 6094266A JP 9426694 A JP9426694 A JP 9426694A JP H07176732 A JPH07176732 A JP H07176732A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
electrode portion
forming
refractory metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6094266A
Other languages
English (en)
Japanese (ja)
Inventor
Kiyotaka Imai
清隆 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Priority to JP6094266A priority Critical patent/JPH07176732A/ja
Priority to TW083104796A priority patent/TW255981B/zh
Priority to PCT/JP1994/001801 priority patent/WO1995012216A1/ja
Publication of JPH07176732A publication Critical patent/JPH07176732A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP6094266A 1993-10-29 1994-05-06 Ｍｉｓ電界効果型トランジスタの製造方法 Withdrawn JPH07176732A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6094266A JPH07176732A (ja) 1993-10-29 1994-05-06 Ｍｉｓ電界効果型トランジスタの製造方法
TW083104796A TW255981B (enrdf_load_stackoverflow) 1993-10-29 1994-05-26
PCT/JP1994/001801 WO1995012216A1 (en) 1993-10-29 1994-10-27 Manufacture of mis field effect semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5-271468 1993-10-29
JP27146893 1993-10-29
JP6094266A JPH07176732A (ja) 1993-10-29 1994-05-06 Ｍｉｓ電界効果型トランジスタの製造方法

Publications (1)

Publication Number Publication Date
JPH07176732A true JPH07176732A (ja) 1995-07-14

Family

ID=26435528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6094266A Withdrawn JPH07176732A (ja) 1993-10-29 1994-05-06 Ｍｉｓ電界効果型トランジスタの製造方法

Country Status (3)

Country Link
JP (1) JPH07176732A (enrdf_load_stackoverflow)
TW (1) TW255981B (enrdf_load_stackoverflow)
WO (1) WO1995012216A1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031588A (ja) * 2001-07-19 2003-01-31 Sony Corp 薄膜半導体装置の製造方法および表示装置の製造方法
JP2005537645A (ja) * 2002-08-28 2005-12-08 マイクロン テクノロジー，インコーポレイティド ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法
JP2012191089A (ja) * 2011-03-13 2012-10-04 Seiko Instruments Inc 半導体装置および基準電圧生成回路
US9041097B2 (en) 2012-09-20 2015-05-26 Mitsubishi Electric Corporation Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
JPS63104467A (ja) * 1986-10-22 1988-05-09 Hitachi Ltd 半導体集積回路装置
JPH0247870A (ja) * 1988-08-10 1990-02-16 Nec Corp 半導体装置の製造方法
JPH02130830A (ja) * 1988-11-10 1990-05-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH0496275A (ja) * 1990-08-03 1992-03-27 Nkk Corp Ｍｏｓ型半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031588A (ja) * 2001-07-19 2003-01-31 Sony Corp 薄膜半導体装置の製造方法および表示装置の製造方法
JP2005537645A (ja) * 2002-08-28 2005-12-08 マイクロン テクノロジー，インコーポレイティド ジルコニウムおよび／またはハフニウム含有層を形成するシステムおよび方法
US9184061B2 (en) 2002-08-28 2015-11-10 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
JP2012191089A (ja) * 2011-03-13 2012-10-04 Seiko Instruments Inc 半導体装置および基準電圧生成回路
US9041097B2 (en) 2012-09-20 2015-05-26 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
WO1995012216A1 (en) 1995-05-04
TW255981B (enrdf_load_stackoverflow) 1995-09-01

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Effective date: 20010731