TW255981B - - Google Patents
Info
- Publication number
- TW255981B TW255981B TW083104796A TW83104796A TW255981B TW 255981 B TW255981 B TW 255981B TW 083104796 A TW083104796 A TW 083104796A TW 83104796 A TW83104796 A TW 83104796A TW 255981 B TW255981 B TW 255981B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27146893 | 1993-10-29 | ||
| JP6094266A JPH07176732A (ja) | 1993-10-29 | 1994-05-06 | Ｍｉｓ電界効果型トランジスタの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW255981B true TW255981B (enrdf_load_stackoverflow) | 1995-09-01 |
Family
ID=26435528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083104796A TW255981B (enrdf_load_stackoverflow) | 1993-10-29 | 1994-05-26 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07176732A (enrdf_load_stackoverflow) |
| TW (1) | TW255981B (enrdf_load_stackoverflow) |
| WO (1) | WO1995012216A1 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4650656B2 (ja) * | 2001-07-19 | 2011-03-16 | ソニー株式会社 | 薄膜半導体装置の製造方法および表示装置の製造方法 |
| US7112485B2 (en) * | 2002-08-28 | 2006-09-26 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
| JP2012191089A (ja) * | 2011-03-13 | 2012-10-04 | Seiko Instruments Inc | 半導体装置および基準電圧生成回路 |
| JP6102140B2 (ja) | 2012-09-20 | 2017-03-29 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8203870A (nl) * | 1982-10-06 | 1984-05-01 | Philips Nv | Halfgeleiderinrichting. |
| JPS63104467A (ja) * | 1986-10-22 | 1988-05-09 | Hitachi Ltd | 半導体集積回路装置 |
| JPH0247870A (ja) * | 1988-08-10 | 1990-02-16 | Nec Corp | 半導体装置の製造方法 |
| JPH02130830A (ja) * | 1988-11-10 | 1990-05-18 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0496275A (ja) * | 1990-08-03 | 1992-03-27 | Nkk Corp | Ｍｏｓ型半導体装置 |
-
1994
- 1994-05-06 JP JP6094266A patent/JPH07176732A/ja not_active Withdrawn
- 1994-05-26 TW TW083104796A patent/TW255981B/zh active
- 1994-10-27 WO PCT/JP1994/001801 patent/WO1995012216A1/ja active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07176732A (ja) | 1995-07-14 |
| WO1995012216A1 (en) | 1995-05-04 |