JPH067592B2 - ゲ−トタ−ンオフサイリスタ - Google Patents

ゲ−トタ−ンオフサイリスタ

Info

Publication number
JPH067592B2
JPH067592B2 JP61163832A JP16383286A JPH067592B2 JP H067592 B2 JPH067592 B2 JP H067592B2 JP 61163832 A JP61163832 A JP 61163832A JP 16383286 A JP16383286 A JP 16383286A JP H067592 B2 JPH067592 B2 JP H067592B2
Authority
JP
Japan
Prior art keywords
cathode
layer
electrode
gto
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61163832A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6319871A (ja
Inventor
三郎 及川
勉 八尾
行正 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61163832A priority Critical patent/JPH067592B2/ja
Priority to DE19873723150 priority patent/DE3723150A1/de
Publication of JPS6319871A publication Critical patent/JPS6319871A/ja
Priority to US07/326,455 priority patent/US5021855A/en
Publication of JPH067592B2 publication Critical patent/JPH067592B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP61163832A 1986-07-14 1986-07-14 ゲ−トタ−ンオフサイリスタ Expired - Lifetime JPH067592B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61163832A JPH067592B2 (ja) 1986-07-14 1986-07-14 ゲ−トタ−ンオフサイリスタ
DE19873723150 DE3723150A1 (de) 1986-07-14 1987-07-13 Gto-thyristor
US07/326,455 US5021855A (en) 1986-07-14 1989-03-20 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61163832A JPH067592B2 (ja) 1986-07-14 1986-07-14 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS6319871A JPS6319871A (ja) 1988-01-27
JPH067592B2 true JPH067592B2 (ja) 1994-01-26

Family

ID=15781592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61163832A Expired - Lifetime JPH067592B2 (ja) 1986-07-14 1986-07-14 ゲ−トタ−ンオフサイリスタ

Country Status (3)

Country Link
US (1) US5021855A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH067592B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3723150A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594278B2 (ja) * 1986-07-30 1997-03-26 ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト 加圧接続型ｇｔｏサイリスタ
EP0450082B1 (en) * 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
DE4135412A1 (de) * 1991-10-26 1993-04-29 Asea Brown Boveri Mos-gesteuerter thyristor mct
DE4135411A1 (de) * 1991-10-26 1993-04-29 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
CN1056248C (zh) * 1992-09-12 2000-09-06 朱文有 一种静电感应晶闸管的制造方法及其器件
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
US6107649A (en) 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
JP4471575B2 (ja) * 2003-02-25 2010-06-02 三菱電機株式会社 圧接型半導体装置
US20070120145A1 (en) * 2003-04-09 2007-05-31 Katsunori Asano Gate turn-off thyristor
JP7432093B2 (ja) * 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド ゲートランナ付きターンオフパワー半導体デバイス
JP7514389B2 (ja) * 2020-09-03 2024-07-10 ヒタチ・エナジー・リミテッド パワー半導体デバイス
EP4006989B1 (en) * 2020-11-25 2024-05-15 Hitachi Energy Ltd Bidirectional thyristor device with asymmetric characteristics
EP4006988B1 (en) * 2020-11-25 2024-01-03 Hitachi Energy Ltd Bidirectional thyristor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086611A (en) * 1975-10-20 1978-04-25 Semiconductor Research Foundation Static induction type thyristor
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4198645A (en) * 1976-01-27 1980-04-15 Semiconductor Research Foundation Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections
US4581626A (en) * 1977-10-25 1986-04-08 General Electric Company Thyristor cathode and transistor emitter structures with insulator islands
US4231059A (en) * 1978-11-01 1980-10-28 Westinghouse Electric Corp. Technique for controlling emitter ballast resistance
JPS6019150B2 (ja) * 1979-10-05 1985-05-14 株式会社日立製作所 半導体装置の製造方法
JPS5710971A (en) * 1980-06-25 1982-01-20 Meidensha Electric Mfg Co Ltd Manufacture of semiconductor rectifying element
JPS5871657A (ja) * 1981-10-23 1983-04-28 Toshiba Corp ゲ−トタ−ンオフサイリスタ
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
EP0190585A1 (de) * 1985-02-01 1986-08-13 Siemens Aktiengesellschaft Abschaltbares Halbleiterbauelement

Also Published As

Publication number Publication date
DE3723150A1 (de) 1988-01-21
DE3723150C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-19
JPS6319871A (ja) 1988-01-27
US5021855A (en) 1991-06-04

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