JPH0666258B2 - 分子線被着装置 - Google Patents

分子線被着装置

Info

Publication number
JPH0666258B2
JPH0666258B2 JP57048181A JP4818182A JPH0666258B2 JP H0666258 B2 JPH0666258 B2 JP H0666258B2 JP 57048181 A JP57048181 A JP 57048181A JP 4818182 A JP4818182 A JP 4818182A JP H0666258 B2 JPH0666258 B2 JP H0666258B2
Authority
JP
Japan
Prior art keywords
molecular beam
platen
substrate
work chamber
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57048181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57170519A (en
Inventor
ジヨン・コンドン・ビ−ン
Original Assignee
ウエスターン エレクトリック カムパニー，インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウエスターン エレクトリック カムパニー，インコーポレーテッド filed Critical ウエスターン エレクトリック カムパニー，インコーポレーテッド
Publication of JPS57170519A publication Critical patent/JPS57170519A/ja
Publication of JPH0666258B2 publication Critical patent/JPH0666258B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP57048181A 1981-03-27 1982-03-27 分子線被着装置 Expired - Lifetime JPH0666258B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24856881A 1981-03-27 1981-03-27
US248568 2005-10-11

Publications (2)

Publication Number Publication Date
JPS57170519A JPS57170519A (en) 1982-10-20
JPH0666258B2 true JPH0666258B2 (ja) 1994-08-24

Family

ID=22939678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048181A Expired - Lifetime JPH0666258B2 (ja) 1981-03-27 1982-03-27 分子線被着装置

Country Status (4)

Country Link
JP (1) JPH0666258B2 (enrdf_load_stackoverflow)
DE (1) DE3211051A1 (enrdf_load_stackoverflow)
FR (1) FR2502643B1 (enrdf_load_stackoverflow)
GB (1) GB2095704B (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605509A (ja) * 1983-06-24 1985-01-12 Hitachi Ltd 分子線エピタキシ装置
FR2548688B1 (fr) * 1983-07-08 1985-10-25 Radiotechnique Compelec Porte-substrat tournant pour reacteur d'epitaxie
JPS6086819A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 分子線エピタキシ装置
JPS6097621A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 分子線エピタキシ装置における基板搬送装置
JPS60117615A (ja) * 1983-11-30 1985-06-25 Hitachi Ltd 分子線エピタキシ装置
US4824518A (en) * 1985-03-29 1989-04-25 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
JPS6235513A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 分子線エピタキシ装置
JPS6255919A (ja) * 1985-09-05 1987-03-11 Fujitsu Ltd 分子線結晶成長装置
US4650064A (en) * 1985-09-13 1987-03-17 Comptech, Incorporated Substrate rotation method and apparatus
EP0529687B1 (en) * 1988-03-30 1996-05-29 Rohm Co., Ltd. Molecular beam epitaxy apparatus
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
CA2137471A1 (en) 1992-06-26 1994-01-06 Tugrul Yasar Transport system for wafer processing line
US5727332A (en) * 1994-07-15 1998-03-17 Ontrak Systems, Inc. Contamination control in substrate processing system
DE19701419A1 (de) * 1997-01-17 1998-07-23 Geesthacht Gkss Forschung Substrathaltereinrichtung
UA70336C2 (uk) * 1999-08-04 2004-10-15 Дженерал Електрік Компані Електронно-променевий пристрій для нанесення покриття конденсацією із парової фази (варіанти)
CN119967842B (zh) * 2025-04-01 2025-10-17 浙江立羽光电科技有限责任公司 氮化物材料制造设备与设备控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3667424A (en) 1969-04-14 1972-06-06 Stanford Research Inst Multi-station vacuum apparatus
US3911162A (en) 1972-04-17 1975-10-07 Xerox Corp System for vapor deposition of thin films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3238918A (en) * 1961-12-26 1966-03-08 Lear Siegler Inc Vacuum deposition chamber for multiple operations
DE1910332A1 (de) * 1969-02-28 1970-09-10 Siemens Ag Hochvakuum-Bedampfungsapparatur
DE2053802A1 (en) * 1970-11-02 1972-05-10 Licentia Gmbh Uniform evaporated coatings prodn - esp metal layers for integrated semiconductor circuits etc
US3656454A (en) * 1970-11-23 1972-04-18 Air Reduction Vacuum coating apparatus
US4137865A (en) * 1976-12-30 1979-02-06 Bell Telephone Laboratories, Incorporated Molecular beam apparatus for processing a plurality of substrates
JPS5487477A (en) * 1977-12-23 1979-07-11 Kokusai Electric Co Ltd Device for etching and stripping semiconductor wafer
JPS5519842A (en) * 1978-07-31 1980-02-12 Agency Of Ind Science & Technol Thin film growing device under vacuum
JPS564233A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Continuous handling apparatus for wafer
JPS56108286A (en) * 1979-11-01 1981-08-27 Xerox Corp Method of manufacturing photoreceptor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3667424A (en) 1969-04-14 1972-06-06 Stanford Research Inst Multi-station vacuum apparatus
US3911162A (en) 1972-04-17 1975-10-07 Xerox Corp System for vapor deposition of thin films

Also Published As

Publication number Publication date
DE3211051C2 (enrdf_load_stackoverflow) 1990-07-26
GB2095704B (en) 1984-08-01
GB2095704A (en) 1982-10-06
FR2502643A1 (fr) 1982-10-01
FR2502643B1 (fr) 1986-05-02
JPS57170519A (en) 1982-10-20
DE3211051A1 (de) 1982-10-21

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