FR2548688B1 - Porte-substrat tournant pour reacteur d'epitaxie - Google Patents

Porte-substrat tournant pour reacteur d'epitaxie

Info

Publication number
FR2548688B1
FR2548688B1 FR8311418A FR8311418A FR2548688B1 FR 2548688 B1 FR2548688 B1 FR 2548688B1 FR 8311418 A FR8311418 A FR 8311418A FR 8311418 A FR8311418 A FR 8311418A FR 2548688 B1 FR2548688 B1 FR 2548688B1
Authority
FR
France
Prior art keywords
substrate holder
rotating substrate
epitaxy reactor
epitaxy
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8311418A
Other languages
English (en)
Other versions
FR2548688A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8311418A priority Critical patent/FR2548688B1/fr
Publication of FR2548688A1 publication Critical patent/FR2548688A1/fr
Application granted granted Critical
Publication of FR2548688B1 publication Critical patent/FR2548688B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR8311418A 1983-07-08 1983-07-08 Porte-substrat tournant pour reacteur d'epitaxie Expired FR2548688B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8311418A FR2548688B1 (fr) 1983-07-08 1983-07-08 Porte-substrat tournant pour reacteur d'epitaxie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8311418A FR2548688B1 (fr) 1983-07-08 1983-07-08 Porte-substrat tournant pour reacteur d'epitaxie

Publications (2)

Publication Number Publication Date
FR2548688A1 FR2548688A1 (fr) 1985-01-11
FR2548688B1 true FR2548688B1 (fr) 1985-10-25

Family

ID=9290654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8311418A Expired FR2548688B1 (fr) 1983-07-08 1983-07-08 Porte-substrat tournant pour reacteur d'epitaxie

Country Status (1)

Country Link
FR (1) FR2548688B1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700080A (fr) * 1966-01-03 1967-07-04
FR2502643B1 (fr) * 1981-03-27 1986-05-02 Western Electric Co Appareil et procede de depot par jet moleculaire sur plusieurs substrats

Also Published As

Publication number Publication date
FR2548688A1 (fr) 1985-01-11

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Legal Events

Date Code Title Description
ST Notification of lapse