GB2190400B - Process for growing gaas monocrystal film - Google Patents
Process for growing gaas monocrystal filmInfo
- Publication number
- GB2190400B GB2190400B GB8612024A GB8612024A GB2190400B GB 2190400 B GB2190400 B GB 2190400B GB 8612024 A GB8612024 A GB 8612024A GB 8612024 A GB8612024 A GB 8612024A GB 2190400 B GB2190400 B GB 2190400B
- Authority
- GB
- United Kingdom
- Prior art keywords
- monocrystal film
- growing gaas
- gaas monocrystal
- growing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60101379A JPS61260622A (en) | 1985-05-15 | 1985-05-15 | Growth for gaas single crystal thin film |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8612024D0 GB8612024D0 (en) | 1986-06-25 |
GB2190400A GB2190400A (en) | 1987-11-18 |
GB2190400B true GB2190400B (en) | 1990-10-17 |
Family
ID=14299154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8612024A Expired - Fee Related GB2190400B (en) | 1985-05-15 | 1986-05-16 | Process for growing gaas monocrystal film |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS61260622A (en) |
DE (1) | DE3616358C2 (en) |
FR (1) | FR2582023B1 (en) |
GB (1) | GB2190400B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPH0657636B2 (en) * | 1985-05-29 | 1994-08-03 | 日本電信電話株式会社 | Compound semiconductor thin film formation method |
US4840921A (en) * | 1987-07-01 | 1989-06-20 | Nec Corporation | Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
SG11201408484TA (en) * | 2012-06-18 | 2015-05-28 | Government Of The U S A As Represented By The Secretary Of The Navy | Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1336910A (en) * | 1970-05-08 | 1973-11-14 | Western Electric Co | Formation of semiconductor films |
US3867202A (en) * | 1973-03-15 | 1975-02-18 | Sumitomo Chemical Co | Chemical vapor deposition for epitaxial growth |
GB2130189A (en) * | 1982-10-19 | 1984-05-31 | Secr Defence | Vapour deposition of films |
GB2162369A (en) * | 1984-07-26 | 1986-01-29 | Nishizawa Junichi | Apparatus for forming semiconductor crystal |
GB2163000A (en) * | 1984-07-26 | 1986-02-12 | Japan Res Dev Corp | Apparatus for forming crystal of semiconductor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1900116C3 (en) * | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of high-purity monocrystalline layers consisting of silicon |
GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
-
1985
- 1985-05-15 JP JP60101379A patent/JPS61260622A/en active Granted
-
1986
- 1986-05-15 DE DE3616358A patent/DE3616358C2/en not_active Expired - Fee Related
- 1986-05-15 FR FR8606988A patent/FR2582023B1/en not_active Expired - Fee Related
- 1986-05-16 GB GB8612024A patent/GB2190400B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1336910A (en) * | 1970-05-08 | 1973-11-14 | Western Electric Co | Formation of semiconductor films |
US3867202A (en) * | 1973-03-15 | 1975-02-18 | Sumitomo Chemical Co | Chemical vapor deposition for epitaxial growth |
GB2130189A (en) * | 1982-10-19 | 1984-05-31 | Secr Defence | Vapour deposition of films |
GB2162369A (en) * | 1984-07-26 | 1986-01-29 | Nishizawa Junichi | Apparatus for forming semiconductor crystal |
GB2163000A (en) * | 1984-07-26 | 1986-02-12 | Japan Res Dev Corp | Apparatus for forming crystal of semiconductor |
Non-Patent Citations (1)
Title |
---|
Chemistry and Industry, 15 April 1985 pages 247 to 251 * |
Also Published As
Publication number | Publication date |
---|---|
JPH0556650B2 (en) | 1993-08-20 |
FR2582023B1 (en) | 1994-04-15 |
DE3616358A1 (en) | 1986-11-20 |
JPS61260622A (en) | 1986-11-18 |
DE3616358C2 (en) | 1996-02-15 |
GB2190400A (en) | 1987-11-18 |
GB8612024D0 (en) | 1986-06-25 |
FR2582023A1 (en) | 1986-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20040516 |