JPH06509642A - 加速度センサ及び製法 - Google Patents
加速度センサ及び製法Info
- Publication number
- JPH06509642A JPH06509642A JP5503165A JP50316593A JPH06509642A JP H06509642 A JPH06509642 A JP H06509642A JP 5503165 A JP5503165 A JP 5503165A JP 50316593 A JP50316593 A JP 50316593A JP H06509642 A JPH06509642 A JP H06509642A
- Authority
- JP
- Japan
- Prior art keywords
- spring
- mass
- layer
- sensor
- vibrating mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000001133 acceleration Effects 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004033 plastic Substances 0.000 claims description 24
- 229920003023 plastic Polymers 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000005452 bending Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 4
- 238000007872 degassing Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000013016 damping Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000009021 linear effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/135—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by making use of contacts which are actuated by a movable inertial mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/13—Mechanical connectors, i.e. not functioning as an electrical connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0078—Switches making use of microelectromechanical systems [MEMS] with parallel movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
- H01H35/141—Details
- H01H35/142—Damping means to avoid unwanted response
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H5/00—Snap-action arrangements, i.e. in which during a single opening operation or a single closing operation energy is first stored and then released to produce or assist the contact movement
- H01H5/04—Energy stored by deformation of elastic members
- H01H5/18—Energy stored by deformation of elastic members by flexing of blade springs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
- Pressure Sensors (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
Abstract
Description
Claims (16)
- 1.少なくとも1つのばね(2)と少なくとも1つの振動質量体とを有するばね 質量系(1)を備え,このばね質量系は所定の加速度方向にだけ応動し,所定の 加速度値を越えた場合に接点を閉じるようになっている形式の加速度センサにお いて,ばね質量系(1)が安定した出発位置(4)と安定したふれ位置(5)と を有し,ばね質量系(1)は,所定の値よりも小さい加速度が生じた場合に所定 の方向で出発位置(4)からたんにわずかに変位し,所定の加速度値を越えた場 合にふれ位置(5)に跳ね飛び,逆の方向の別の所定の加速度値を越えた場合に だけふれ位置(5)から出発位置(4)に戻るようにしたことを特徴とする加速 度センサ。
- 2.少なくとも1つの接触台(6・15)と少なくとも1つの支承台(7)とが 板形の絶縁基体(8)上に固定されており,少なくとも1つの振動質量体(3) を取り付けた少なくとも1つのばね(2)が支承台(7)に結合されており,振 動質量体(3)及びばね(2)が基体(8)に対して間隔を有しており,振動質 量体(3)及び接触台(6・15)がわずかな相互間隔を有しており,接触台( 6)・支承台(7)・ばね(2)及び振動質量体(3)が金属から成っていて. その側壁面が基体(8)に対してほぼ垂直である請求項1記載のセンサ。
- 3.振動質量体(3)及び(又は)接触台(6)が接点(9)を有しており,振 動質量体(3)及び(又は)接触台(6)の接点(9)が別の材料から成ってい る請求項1又は請求項2記載のセンサ。
- 4.少なくとも2つのばね(2)が使用され,ばね(2)が曲げビームとして構 成されており,その厚さが長さに比して小さい請求項1から請求項3までのいず れか1項に記載のセンサ。
- 5.ばね質量系(1)が出発位置(4)にある場合にばね(2)が単数又は複数 の湾曲部を有している請求項4記載のセンサ。
- 6.出発位置(4)において,各ばねが直線状であり少なくとも2つのばね(2 )の間の位置関係が平行でない請求項4又は請求項5記載のセンサ。
- 7.2つの支承台(7)が使用され,振動質量体(3)が支承台(7)の間にあ って,それぞれ1つのばね(2)によって支承台(7)と結合されている請求項 4から請求項6までのいずれか1項に記載のセンサ。
- 8.ばね質量系(1)が少なくとも1つの静電作動子(10)を備えており,こ の静電作動子によってばね質量系を一方の位置(4・5)から他方の位置(5・ 4)に動かし得るようにした請求項1から請求項7までのいずれか1項に記載の センサ。
- 9.少なくとも1つの静電作動子(10)が櫛形の互いに入り組んでいる電極( 13)から成っており,これに電気ポテンシャルをかけ得るようにした請求項8 記載のセンサ。
- 10.接触台(15)が次のように,すなわち,接触台が振動質量体(3)及び ばね(2)に向いた側において接点(9)の周囲を除いて振動質量体(3)及び (又は)ばね(2)に対してわずかなすきま(16)を有しているように,構成 されており,接触台(15)と振動質量体(3)及び(又は)ばね(2)との間 のすきま(16)が接触台(15)及び振動質量体(3)の接点(9)の相互間 隔よりもわずかにしか大きくない請求項1から請求項9までのいずれか1項に記 載のセンサ。
- 11.すきま(16)が脱気スリット(17)を備えており,該脱気スリットは 振動質量体(3)又は接触台(15)又はこれら双方内に突入している請求項1 0記載のセンサ。
- 12.接触台(15)と振動質量体(3)及びばね(2)との間に電圧をかける 手段を有している請求項10又は請求項11記載のセンサ。
- 13.ア基体として,構造化された導電層(22)及び構造化された溶解層(2 3)を有する絶縁板(21)を使用し, イ基体上に,切り欠き部(25)を有するプラスチック層(24)を形成し,切 り欠き部(25)を部分的に溶解層(23)上に位置せしめ, ウ切り欠き部(25)に電気的手段によって金属を満たし, エプラスチック層(24)及び溶解層を除去する ことを特徴とする請求項1から請求項12までのいずれか1項に記載のセンサの 製法。
- 14.ア基体として,構造化された導電層(22)及び構造化された溶解層(2 3)を有する絶縁板(21)を使用し, イ基体上に,切り欠き部(25)を有するプラスチック層(24)を形成し,切 り欠き部(25)を部分的に溶解層(23)上に位置せしめウ切り欠き部(25 )に電気的手段によって金属を満たし, エプラスチック層(24)を部分的にレントゲンビームで照射し,照射された範 囲を照射されなかった範囲と区別して選択的に溶解させ,これによって生じた中 空室に別の金属を充てんしオプラスチック層(24)及び溶解層(23)を除去 する ことを特徴とする請求項1から請求項12までのいずれか1項に記載のセンサの 製法。
- 15.切り欠き部(25)を有するプラスチック層(24)の製作を,レントゲ ンビームでプラスチック層を照射して照射された範囲を選択的に溶解させること によって行う請求項13又は請求項14記載の製法。
- 16.切り欠き部(25)を有するプラスチック層(24)の製作を,プラスチ ック構造体の成形によって行う請求項13又は請求項14記載の製法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4126107.0 | 1991-08-07 | ||
DE4126107A DE4126107C2 (de) | 1991-08-07 | 1991-08-07 | Beschleunigungssensor und Verfahren zur Herstellung |
PCT/DE1992/000573 WO1993003385A1 (de) | 1991-08-07 | 1992-07-14 | Beschleunigungssensor und verfahren zur herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06509642A true JPH06509642A (ja) | 1994-10-27 |
JP3224391B2 JP3224391B2 (ja) | 2001-10-29 |
Family
ID=6437842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50316593A Expired - Lifetime JP3224391B2 (ja) | 1991-08-07 | 1992-07-14 | 加速度センサ及び製法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5415043A (ja) |
EP (1) | EP0597879A1 (ja) |
JP (1) | JP3224391B2 (ja) |
DE (1) | DE4126107C2 (ja) |
WO (1) | WO1993003385A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002517320A (ja) * | 1998-06-04 | 2002-06-18 | キャベンディッシュ キネティクス リミテッド | マイクロメカニカル素子 |
JP2004347475A (ja) * | 2003-05-22 | 2004-12-09 | Denso Corp | 容量式力学量センサ |
JP2010281153A (ja) * | 2009-06-05 | 2010-12-16 | Tom Jacobsen | 液中堆積物の流送排出設備 |
JP2021129336A (ja) * | 2020-02-10 | 2021-09-02 | 株式会社鷺宮製作所 | 振動発電素子 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4229068C2 (de) * | 1992-09-01 | 1994-06-16 | Bosch Gmbh Robert | Beschleunigungsschalter und Verfahren zur Herstellung |
DE4402994A1 (de) * | 1994-02-01 | 1995-08-03 | Bayerische Motoren Werke Ag | Elektrischer Sicherheitsschalter für Kraftfahrzeuge |
US5712609A (en) * | 1994-06-10 | 1998-01-27 | Case Western Reserve University | Micromechanical memory sensor |
JPH10512093A (ja) * | 1995-01-12 | 1998-11-17 | シーメンス アクチエンゲゼルシヤフト | 機械式の加速スイッチ |
DE19508014C1 (de) * | 1995-01-12 | 1996-07-11 | Siemens Ag | Mechanischer Beschleunigungsschalter |
JP3686147B2 (ja) * | 1995-12-20 | 2005-08-24 | 曙ブレーキ工業株式会社 | 加速度センサ |
DE19719796B4 (de) * | 1997-05-10 | 2008-06-26 | Robert Bosch Gmbh | Beschleunigungsschalter |
CA2262962C (en) * | 1998-05-29 | 2003-04-29 | Myung Soon Bae | Automatic power cut-off device for emergency situations |
JP2000065855A (ja) * | 1998-08-17 | 2000-03-03 | Mitsubishi Electric Corp | 半導体加速度スイッチ、半導体加速度スイッチの製造方法 |
US6183097B1 (en) | 1999-01-12 | 2001-02-06 | Cornell Research Foundation Inc. | Motion amplification based sensors |
DE19912669A1 (de) * | 1999-03-20 | 2000-09-21 | Abb Research Ltd | Substratparallel arbeitendes Mikrorelais |
US6803755B2 (en) * | 1999-09-21 | 2004-10-12 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) with improved beam suspension |
FR2808264B1 (fr) * | 2000-04-28 | 2002-06-07 | Commissariat Energie Atomique | Structure mecanique micro-usinee et dispositif incorporant la structure |
DE10038509A1 (de) * | 2000-08-08 | 2002-02-28 | Bosch Gmbh Robert | Beschleunigungsschalter |
DE20021531U1 (de) | 2000-12-20 | 2001-03-01 | TRW Automotive Electronics & Components GmbH & Co. KG, 78315 Radolfzell | Mechanischer Beschleunigungssensor |
WO2002075428A1 (en) * | 2001-03-16 | 2002-09-26 | Optical Coating Laboratory, Inc. | Bi-stable micro switch |
ATE451712T1 (de) * | 2001-03-29 | 2009-12-15 | Abb Research Ltd | Mikrorelais mit neuem aufbau |
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1991
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-
1992
- 1992-07-14 JP JP50316593A patent/JP3224391B2/ja not_active Expired - Lifetime
- 1992-07-14 EP EP92914345A patent/EP0597879A1/de not_active Withdrawn
- 1992-07-14 US US08/190,144 patent/US5415043A/en not_active Expired - Lifetime
- 1992-07-14 WO PCT/DE1992/000573 patent/WO1993003385A1/de not_active Application Discontinuation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002517320A (ja) * | 1998-06-04 | 2002-06-18 | キャベンディッシュ キネティクス リミテッド | マイクロメカニカル素子 |
JP2010188517A (ja) * | 1998-06-04 | 2010-09-02 | Cavendish Kinetics Ltd | マイクロメカニカル素子 |
JP2004347475A (ja) * | 2003-05-22 | 2004-12-09 | Denso Corp | 容量式力学量センサ |
JP2010281153A (ja) * | 2009-06-05 | 2010-12-16 | Tom Jacobsen | 液中堆積物の流送排出設備 |
JP2021129336A (ja) * | 2020-02-10 | 2021-09-02 | 株式会社鷺宮製作所 | 振動発電素子 |
Also Published As
Publication number | Publication date |
---|---|
DE4126107C2 (de) | 1993-12-16 |
DE4126107A1 (de) | 1993-02-18 |
JP3224391B2 (ja) | 2001-10-29 |
WO1993003385A1 (de) | 1993-02-18 |
US5415043A (en) | 1995-05-16 |
EP0597879A1 (de) | 1994-05-25 |
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