JPH0635660B2 - ガス相析出による金属ケイ化物層形成方法 - Google Patents

ガス相析出による金属ケイ化物層形成方法

Info

Publication number
JPH0635660B2
JPH0635660B2 JP60072512A JP7251285A JPH0635660B2 JP H0635660 B2 JPH0635660 B2 JP H0635660B2 JP 60072512 A JP60072512 A JP 60072512A JP 7251285 A JP7251285 A JP 7251285A JP H0635660 B2 JPH0635660 B2 JP H0635660B2
Authority
JP
Japan
Prior art keywords
mbar
pressure
metal silicide
reaction
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60072512A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60230983A (ja
Inventor
コンラート、ヒーバー
マンフレート、シユトルツ
クラウデイア、ウイークツオレーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS60230983A publication Critical patent/JPS60230983A/ja
Publication of JPH0635660B2 publication Critical patent/JPH0635660B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H10D64/0112—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP60072512A 1984-04-06 1985-04-05 ガス相析出による金属ケイ化物層形成方法 Expired - Lifetime JPH0635660B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3413064.0 1984-04-06
DE19843413064 DE3413064A1 (de) 1984-04-06 1984-04-06 Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung

Publications (2)

Publication Number Publication Date
JPS60230983A JPS60230983A (ja) 1985-11-16
JPH0635660B2 true JPH0635660B2 (ja) 1994-05-11

Family

ID=6232906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072512A Expired - Lifetime JPH0635660B2 (ja) 1984-04-06 1985-04-05 ガス相析出による金属ケイ化物層形成方法

Country Status (4)

Country Link
US (1) US4608271A (OSRAM)
JP (1) JPH0635660B2 (OSRAM)
CA (1) CA1238822A (OSRAM)
DE (1) DE3413064A1 (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250172A (ja) * 1985-04-25 1986-11-07 Fujitsu Ltd タングステンシリサイド膜の成長方法
FR2589887B1 (fr) * 1985-11-14 1988-10-07 Semy Engineering Procede et reacteur de depot de couches de siliciure
US4835114A (en) * 1986-02-19 1989-05-30 Hitachi, Ltd. Method for LPCVD of semiconductors using oil free vacuum pumps
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
JP2592844B2 (ja) * 1987-07-10 1997-03-19 株式会社東芝 高融点金属膜の形成方法
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
GB2213835B (en) * 1987-12-18 1992-07-08 Gen Electric Co Plc Deposition apparatus
JPH02185973A (ja) * 1989-01-13 1990-07-20 Tokyo Electron Ltd 金属シリサイド膜の形成方法
US5110760A (en) * 1990-09-28 1992-05-05 The United States Of America As Represented By The Secretary Of The Navy Method of nanometer lithography
US5344792A (en) * 1993-03-04 1994-09-06 Micron Technology, Inc. Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2
JPH09202973A (ja) * 1996-01-24 1997-08-05 Tokyo Electron Ltd 成膜処理装置の排気システム構造
US5919531A (en) * 1997-03-26 1999-07-06 Gelest, Inc. Tantalum and tantalum-based films and methods of making the same
US5856237A (en) * 1997-10-20 1999-01-05 Industrial Technology Research Institute Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
KR20000007363A (ko) * 1998-07-02 2000-02-07 제임스 알. 데니히 탄탈 및 탄탈을 주성분으로 하는 막과 그의제조방법
DE10080457T1 (de) * 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US6139922A (en) * 1999-05-18 2000-10-31 Gelest, Inc. Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
US6632737B1 (en) * 2000-10-13 2003-10-14 Tokyo Electron Limited Method for enhancing the adhesion of a barrier layer to a dielectric
DE10221112B4 (de) * 2002-05-03 2008-04-03 Fhr Anlagenbau Gmbh Verfahren zur Herstellung eines metallisch glänzenden Schichtsystems auf einem Substrat und Verwendung des Verfahrens
US6586330B1 (en) 2002-05-07 2003-07-01 Tokyo Electron Limited Method for depositing conformal nitrified tantalum silicide films by thermal CVD
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US7399335B2 (en) * 2005-03-22 2008-07-15 H.C. Starck Inc. Method of preparing primary refractory metal
US20100273010A1 (en) * 2009-03-19 2010-10-28 Robert Froehlich Silicide-coated metal surfaces and methods of utilizing same
TWI454309B (zh) 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
JP2012524022A (ja) * 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション 高純度ポリシリコンの製造方法及び装置
AU2010239350A1 (en) * 2009-04-20 2011-11-10 Ae Polysilicon Corporation A reactor with silicide-coated metal surfaces
CN102936720A (zh) * 2012-11-15 2013-02-20 复旦大学 一种低压热壁密集装片原子层淀积设备和工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide

Also Published As

Publication number Publication date
DE3413064C2 (OSRAM) 1993-01-21
DE3413064A1 (de) 1985-10-31
CA1238822A (en) 1988-07-05
US4608271A (en) 1986-08-26
JPS60230983A (ja) 1985-11-16

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