JPH06252421A - Integrated semiconductor pressure sensor - Google Patents

Abstract

PURPOSE:To obtain the title pressure sensor of small type, which can be housed in a package, having high yield of production, and the deterioration of characteristics when it is manufactured. CONSTITUTION:The title integrated semiconductor pressure sensor is composed of a semiconductor pressure sensor chip 21, a thin film resistance chip 22, and a semiconductor chip 23 where the semiconductor pressure sensor chip 21 and the thin film resistance chip 22 are mounted and the signal outputted from the semiconductor pressure sensor chip 21 is treated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensor which is widely used in various fields such as measuring instruments, automobiles, aircraft, medical equipment, home appliances, and more particularly, a pressure sensor,
The present invention relates to an integrated semiconductor pressure sensor in which peripheral circuits and thin film resistors are integrated.

[0002]

2. Description of the Related Art Conventionally, industrial measuring instruments, automobiles, aircraft,
A pressure sensor module that is hybridized is a pressure sensor that is widely used in the fields of medical equipment such as a sphygmomanometer and home appliances such as a cleaner. FIG. 3 is a block diagram showing an example of a conventional pressure sensor module. In this figure, 1 is a thick film circuit board on which a wiring pattern 2 of one layer or multiple layers made of ceramic or the like is formed, and 3 is a thick film circuit. A monolithic IC mounted on the substrate 1 and fixed with an adhesive or the like, 4 is a semiconductor pressure sensor in which a semiconductor pellet constituting a pressure detecting portion is enclosed in a package, and 5 is an adhesive mounted on the thick film circuit board 1. Chip components such as capacitors, resistance elements, inductors, etc., fixed by means of the like, and a thick film resistor 6 formed by printing on the thick film circuit board 1. In the monolithic IC 3, each lead pin is electrically connected to the wiring pattern 2, and in the semiconductor pressure sensor 4, the lead pin, the bump or the like extending out of the package is the wiring pattern 2.
, And each terminal of the chip component 5 is electrically connected to the wiring pattern 2. In such a pressure sensor module, the circuit characteristics are adjusted by trimming the thick film resistor 6 using a laser or the like.

Further, in recent years, in particular, an integrated semiconductor pressure sensor has been provided as a sensor which can be adapted to the computerization of automobiles and the like and can be mounted on a printed circuit board.
FIG. 4 is a block diagram showing an example of a conventional integrated semiconductor pressure sensor, and FIG. 5 is an enlarged structural cross-sectional view of FIG. 4. In this figure, 7 is a pressure detecting portion in the semiconductor pressure sensor 4 shown in FIG. A pressure sensor portion corresponding to the constituting semiconductor pellet, 8
Is a bipolar linear IC section for signal processing having the same function as the peripheral circuit composed of the monolithic IC 3 and the chip component 5 shown in FIG. 3, 9 is a thin film resistor, 10 is the pressure sensor section 7, bipolar linear IC section 8, It is a p-type silicon substrate in which the thin film resistor 9 is integrated. Further, in the pressure sensor unit 7, 11 is a diaphragm obtained by thinning the p-type silicon substrate 10. In such an integrated semiconductor pressure sensor, the circuit characteristics are adjusted by trimming the thin film resistor 9 using a laser or the like.

[0004]

By the way, in the conventional pressure sensor module shown in FIG. 3, components of various shapes and sizes such as a monolithic IC 3, a semiconductor pressure sensor 4, and a chip component 5 are provided on the thick film circuit board 1. However, there is a limit to downsizing the entire pressure sensor module. Moreover, when this pressure sensor module is packaged, it becomes large and has a special shape as a whole, and it is difficult to fit it in one package.

Further, in the conventional integrated semiconductor pressure sensor shown in FIGS. 4 and 5, the pressure sensor portion 7, the bipolar linear IC portion 8 and the thin film resistor 9 are integrated on the same p-type silicon substrate 10. The integrated semiconductor pressure sensor yields as a product
There is a problem that the pressure is lower than that of the pressure sensor module. Assuming that the yield of the integrated semiconductor pressure sensor as a whole is AR, the yield of the pressure sensor unit 7 is SR, and the yield of the bipolar linear IC unit 8 and the thin film resistor 9 is IR, the entire integrated semiconductor pressure sensor product. The yield AR as can be expressed by the following equation. AR = SR × IR (1) The pressure sensor section 7 has a low yield SR because of large variations in characteristics and poor temperature characteristics. Therefore, the yield AR of the integrated semiconductor pressure sensor as a whole is a product.
Will be reduced.

Further, the diaphragm 1 of the pressure sensor unit 7
In No. 1, since the p-type silicon substrate 10 is formed by etching with an alkaline solution, there is a problem that the characteristics of the bipolar linear IC portion 8 and the thin film resistor 9 may be deteriorated due to contamination by alkaline ions or the like. It was Further, since the thin film resistor 9 is trimmed by using a laser or the like, there is a problem that the circuit cannot be readjusted when it is necessary to readjust the circuit characteristics or when it is desired to change the circuit characteristics.

The present invention has been made in view of the above circumstances, and can be miniaturized and accommodated in one package, and the yield is high, and
An object of the present invention is to provide an integrated semiconductor pressure sensor capable of preventing deterioration of characteristics during manufacturing.

[0008]

In order to solve the above problems, the present invention adopts the following integrated semiconductor pressure sensor. That is, it is characterized by including a semiconductor pressure sensor chip, a thin film resistance chip, and a semiconductor chip on which the semiconductor pressure sensor chip and the thin film resistance chip are mounted and which processes a signal output from the semiconductor pressure sensor chip. .

[0009]

The integrated semiconductor pressure sensor of the present invention comprises a semiconductor pressure sensor chip, a thin film resistance chip, and a semiconductor chip, so that the integrated semiconductor pressure sensor can be miniaturized and can be housed in one package. Become. Further, the yield is high, and it is possible to prevent the deterioration of the characteristics during manufacturing.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing the structure of an integrated semiconductor pressure sensor according to an embodiment of the present invention. In this figure, the same components as those in FIGS. 4 and 5 are designated by the same reference numerals, and the description thereof will be omitted.

The integrated semiconductor pressure sensor shown in FIG. 1 is shown in FIG.
5 is different from the conventional integrated semiconductor pressure sensor shown in FIG. 5 in that the semiconductor pressure sensor chip 21 manufactured separately in place of the pressure sensor unit 7 is a thin film manufactured in place of the thin film resistor 9. The resistance chips 22 are mounted on the p-type silicon substrate 10, respectively. That is,
The bipolar linear IC section 8 is integrated and formed on the p-type silicon substrate 10 in the same manufacturing process as the conventional integrated semiconductor pressure sensor shown in FIGS. 4 and 5, while
Semiconductor pressure sensor chip 21 and thin film resistance chip 22
Are separately made separately.

The bipolar linear IC section 8 and the p-type silicon substrate 10 are integrated into a bipolar IC chip (semiconductor chip) 23. The bipolar IC chip 23, the semiconductor pressure sensor chip 21, and the thin film resistance chip 22. For example, they are joined by Au-Si eutectic solder. Further, the semiconductor pressure sensor chip 21 and the bipolar IC chip 23, and the thin film resistance chip 22 and the bipolar IC chip 23 are electrically connected to the bonding pad 24 and the bonding pad 25 respectively formed by aluminum or gold. It is made by bonding a wire 26 made of

Here, FIG. 2 is a sectional view showing a modularized structure of the integrated semiconductor pressure sensor shown in FIG. In this figure, the same reference numerals are given to the constituent elements corresponding to the respective portions of FIG. 1, and the description thereof will be omitted. In FIG.
Reference numeral 31 is a base on which the bipolar IC chip 23 is mounted and fixed, 32 is an Au-Si eutectic solder that joins the bipolar IC chip 23 to each of the semiconductor pressure sensor chip 21 and the thin film resistance chip 22, and 33 is a base 31. A lead pin that penetrates through and extends to the outside, and a metal can 34 that encapsulates the integrated semiconductor pressure sensor formed on the base 31 to form a module. The lead pin 33 is sealed by a glass hermetic 35 and a bonding pad 36 formed on the bipolar IC chip 23 (see FIG. 1).
(Refer to FIG. 2) and the wire 37.

As described above, according to the integrated semiconductor pressure sensor of the above embodiment, the semiconductor pressure sensor chip 21 is used.
, Thin film resistor chip 22, and bipolar IC chip 23
Since it is composed of and, it can be miniaturized at the same level as the conventional integrated semiconductor pressure sensor, and can be housed in one package.

Further, since the semiconductor pressure sensor chip 21, the thin film resistance chip 22 and the bipolar IC chip 23 may be manufactured completely separately and integrated with each other, the yield of each component before modularization is The semiconductor pressure sensor chip 21 is 100% and the thin film resistance chip 22 is 10%.
The yield is 0% and the bipolar IC chip 23 is 100%, and the yield after modularization is significantly improved as compared with the conventional one.

Further, since the thin film resistance chip 22 and the bipolar IC chip 23 are not affected by the etching of the semiconductor pressure sensor chip 21 by the alkaline solution when the diaphragm is manufactured, the deterioration of the characteristics at the time of manufacturing can be prevented. it can. Further, by exchanging the thin film resistance chip 22, the adjustment can be redone and the adjustment yield can be improved.

[0017]

As described above, according to the integrated semiconductor pressure sensor of the present invention, a semiconductor pressure sensor chip,
Since the semiconductor thin film resistor chip and the semiconductor pressure sensor chip and the thin film resistor chip are mounted and the semiconductor chip for processing the signal output from the semiconductor pressure sensor chip is provided, it is possible to reduce the size, and It can be housed in one package, and the yield after modularization is significantly improved as compared with the conventional one. Further, there is an effect that the yield as a product is high, and further, the deterioration of the characteristics at the time of manufacturing can be prevented. Further, by exchanging the thin-film resistance chip, the adjustment can be redone and the adjustment yield can be improved.

[Brief description of drawings]

FIG. 1 is a perspective view showing a configuration of an integrated semiconductor pressure sensor according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a modularized configuration of an integrated semiconductor pressure sensor according to an embodiment of the present invention.

FIG. 3 is a perspective view showing a configuration of a conventional pressure sensor module.

FIG. 4 is a perspective view showing a configuration of a conventional integrated semiconductor pressure sensor.

5 is an enlarged structural sectional view of FIG. 4. FIG.

[Explanation of symbols]

8 ... Bipolar linear IC part, 10 ... P-type silicon substrate, 21 ... Semiconductor pressure sensor chip, 22 ... Thin film resistance chip, 23 ... Bipolar IC chip (semiconductor chip), 24 ... Bonding pad, 25 ... ... Bonding pad, 26 ... Wire, 31 ... Base, 32 ...
... Au-Si eutectic solder, 33 ... Lead pin, 34 ...
Metal can, 35 ... Glass hermetic, 36 ... Bonding pad, 37 ... Wire.

Claims (1)

[Claims] 1. A semiconductor pressure sensor chip, a thin film resistance chip, and a semiconductor chip on which the semiconductor pressure sensor chip and the thin film resistance chip are mounted and which processes a signal output from the semiconductor pressure sensor chip. Characterized integrated semiconductor pressure sensor.