JPH0621342A - 電力集積回路 - Google Patents

電力集積回路

Info

Publication number
JPH0621342A
JPH0621342A JP5084631A JP8463193A JPH0621342A JP H0621342 A JPH0621342 A JP H0621342A JP 5084631 A JP5084631 A JP 5084631A JP 8463193 A JP8463193 A JP 8463193A JP H0621342 A JPH0621342 A JP H0621342A
Authority
JP
Japan
Prior art keywords
semiconductor
region
integrated circuit
power
surface layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5084631A
Other languages
English (en)
Japanese (ja)
Inventor
Johnny K O Sin
ケイ オー シン ジョニー
Barry M Singer
エム シンガー バリー
Satyendranath Mukherjee
ムケリエ サテインドラナス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPH0621342A publication Critical patent/JPH0621342A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP5084631A 1992-04-14 1993-04-12 電力集積回路 Pending JPH0621342A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/868746 1992-04-14
US07/868,746 US5243214A (en) 1992-04-14 1992-04-14 Power integrated circuit with latch-up prevention

Publications (1)

Publication Number Publication Date
JPH0621342A true JPH0621342A (ja) 1994-01-28

Family

ID=25352248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5084631A Pending JPH0621342A (ja) 1992-04-14 1993-04-12 電力集積回路

Country Status (3)

Country Link
US (1) US5243214A (enExample)
EP (1) EP0566186A2 (enExample)
JP (1) JPH0621342A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648281A (en) * 1992-09-21 1997-07-15 Siliconix Incorporated Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
US5495123A (en) * 1994-10-31 1996-02-27 Sgs-Thomson Microelectronics, Inc. Structure to protect against below ground current injection
US5834826A (en) * 1997-05-08 1998-11-10 Stmicroelectronics, Inc. Protection against adverse parasitic effects in junction-isolated integrated circuits
JPH11224935A (ja) * 1997-12-02 1999-08-17 Mitsubishi Electric Corp 半導体集積回路の基板及び半導体集積回路の製造方法
US6137142A (en) * 1998-02-24 2000-10-24 Sun Microsystems, Inc. MOS device structure and method for reducing PN junction leakage
EP1172848A1 (en) * 2000-07-14 2002-01-16 STMicroelectronics S.r.l. Integrated semiconductor structure
US6737713B2 (en) * 2001-07-03 2004-05-18 Tripath Technology, Inc. Substrate connection in an integrated power circuit
US7470955B2 (en) * 2005-04-15 2008-12-30 Delphi Technologies, Inc. Technique for improving negative potential immunity of an integrated circuit
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
US8729662B2 (en) * 2008-09-12 2014-05-20 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE754677A (fr) * 1969-08-11 1971-01-18 Rca Corp Circuits integres fonctionnant sur courant
US3931634A (en) * 1973-06-14 1976-01-06 Rca Corporation Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
US4170501A (en) * 1978-02-15 1979-10-09 Rca Corporation Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
US4647956A (en) * 1985-02-12 1987-03-03 Cypress Semiconductor Corp. Back biased CMOS device with means for eliminating latchup
JPS6212151A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd 半導体装置
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi
NL8800922A (nl) * 1988-04-11 1989-11-01 Philips Nv Geintegreerde schakeling met complementaire mos-transistor.

Also Published As

Publication number Publication date
EP0566186A3 (enExample) 1994-04-06
US5243214A (en) 1993-09-07
EP0566186A2 (en) 1993-10-20

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