JPH06157725A - Resin composition for sealing semiconductor - Google Patents

Resin composition for sealing semiconductor

Info

Publication number
JPH06157725A
JPH06157725A JP30667192A JP30667192A JPH06157725A JP H06157725 A JPH06157725 A JP H06157725A JP 30667192 A JP30667192 A JP 30667192A JP 30667192 A JP30667192 A JP 30667192A JP H06157725 A JPH06157725 A JP H06157725A
Authority
JP
Japan
Prior art keywords
curing agent
resin
epoxy resin
formula
inorganic filler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30667192A
Other languages
Japanese (ja)
Other versions
JP3230771B2 (en
Inventor
Hironori Osuga
浩規 大須賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP30667192A priority Critical patent/JP3230771B2/en
Publication of JPH06157725A publication Critical patent/JPH06157725A/en
Application granted granted Critical
Publication of JP3230771B2 publication Critical patent/JP3230771B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

PURPOSE:To obtain the subject composition composed of an epoxy resin, a specific curing agent and an inorganic filler at specific ratios and having excellent soldering crack resistance, moisture resistance and heat resistance. CONSTITUTION:The objective composition contains (A) an epoxy resin containing 50-100wt.% (based on the total epoxy resin) of a biphenyl-type epoxy resin of formula I (R1 to R4 are H or CH3), (B) a curing agent containing 50-100wt.% (based on the total curing agent) of a phenol resin compound of formula II (X is group of formula II or formula III; (n) is 1-8) as curing agent and (C) 70-90wt.% (based on the total composition) of an inorganic filler such as fused silica powder.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、耐半田ストレス性及び
耐湿性に優れた半導体封止用樹脂組成物に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation having excellent solder stress resistance and moisture resistance.

【0002】[0002]

【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品を熱硬化性樹脂で封止しているが、特
に集積回路では耐熱性、耐湿性に優れたO−クレゾール
ノボラックエポキシ樹脂をノボラック型フェノール樹脂
で硬化させるエポキシ樹脂組成物が用いられてきた。し
かし近年の電子機器の小型・軽量化・高性能化の市場動
向において、半導体の高集積化も年々進み、パッケージ
においては小型・薄型の表面実装タイプが主流と成りつ
つあり、また半導体の高集積化に伴うチップの大型化か
ら封止樹脂への要求は益々厳しいものとなり従来の樹脂
組成物では信頼性の確保が困難になってきている。これ
は半導体の実装方法が従来のピン挿入型から表面実装型
(VPSリフロー型、IRリフロー型、半田浸漬法等)
に変わる事により、半田浸漬の工程において急激に20
0℃以上の高温にさらされることになりパッケージが割
れたり、チップと封止樹脂の界面剥離が生じ、耐湿性が
劣化し信頼性が低くなるといった問題が起きる為であ
り、小型・薄型パッケージでは一層影響が大きくなる為
である。 この様な状況から、半田浸漬等の厳しい条件
においても耐クラック性、耐湿性に優れた高信頼性の樹
脂の開発が急がれている。
2. Description of the Related Art Conventionally, electronic parts such as diodes, transistors and integrated circuits have been sealed with a thermosetting resin. Especially in integrated circuits, O-cresol novolac epoxy resin which is excellent in heat resistance and moisture resistance is used as a novolac resin. Epoxy resin compositions that have been cured with type phenolic resins have been used. However, due to the recent market trend of miniaturization, weight reduction and high performance of electronic equipment, the high integration of semiconductors is advancing year by year, and small and thin surface mounting type is becoming the mainstream in the package. Due to the increase in size of chips accompanying the increase in demand, the demand for sealing resin has become more and more severe, and it has become difficult to secure reliability with conventional resin compositions. This is a semiconductor mounting method from the conventional pin insertion type to surface mounting type (VPS reflow type, IR reflow type, solder dipping method, etc.)
By changing to the
This is because the package is cracked due to exposure to high temperatures of 0 ° C or higher, and the interface between the chip and the encapsulation resin peels off, resulting in deterioration of moisture resistance and reduced reliability. This is because the influence will be even greater. Under such circumstances, there is an urgent need to develop a highly reliable resin having excellent crack resistance and moisture resistance even under severe conditions such as solder immersion.

【0003】これらの問題を解決するために半田付け時
の熱衝撃を緩和する目的で、熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や各種シリコーン
化合物の添加(特開昭62−11585号公報、62−
116654号公報、62−128162号公報)、さ
らにはシリコーン変性(特開昭62−136860号公
報)などの手法で対応しているがいずれも半田浸漬時に
パッケージにクラックが発生し信頼性の優れた半導体封
止用エポキシ樹脂組成物を得るまでには至らなかった。
一方、半田浸漬時の耐半田クラック性に優れた半導体封
止用エポキシ樹脂組成物を得るために、硬化剤としてフ
ェノールアラルキル樹脂の使用(特開昭59−6766
0号公報)等が検討されてきたがフェノールアラルキル
樹脂の使用によりリードフレームとの密着性及び低吸水
性が向上し、クラック発生が低減するが、フェノールア
ラルキル樹脂硬化剤系では硬化物のガラス転移温度が、
従来のフェノールノボラック硬化剤系に比べ著しく低く
なり、長期耐熱性が劣るという欠点がある。
In order to solve these problems, in order to alleviate the thermal shock at the time of soldering, addition of a thermoplastic oligomer (Japanese Patent Laid-Open No. 62-15849) and addition of various silicone compounds (Japanese Patent Laid-Open No. 62- 11585, 62-
No. 116654, 62-128162) and further silicone modification (Japanese Patent Laid-Open No. 62-136860), but all of them are excellent in reliability because cracks are generated in the package during solder immersion. It has not been possible to obtain an epoxy resin composition for semiconductor encapsulation.
On the other hand, in order to obtain an epoxy resin composition for semiconductor encapsulation which is excellent in solder crack resistance during solder immersion, use of a phenol aralkyl resin as a curing agent (Japanese Patent Laid-Open No. 59-6766).
No. 0) has been studied, but by using a phenol aralkyl resin, the adhesion to the lead frame and low water absorption are improved, and cracking is reduced, but in the phenol aralkyl resin curing agent system, the glass transition of the cured product temperature,
Compared with the conventional phenol novolac curing agent system, it has a remarkably low level and has a drawback that the long-term heat resistance is inferior.

【0004】[0004]

【発明が解決しようとする課題】本発明は、このような
問題に対して耐半田クラック性、耐湿性及び耐熱性が著
しく優れた半導体封止用樹脂組成物を提供するものであ
る。
SUMMARY OF THE INVENTION The present invention provides a resin composition for encapsulating a semiconductor, which is extremely excellent in solder crack resistance, moisture resistance and heat resistance against such problems.

【0005】[0005]

【課題を解決するための手段】本発明者らは、これらの
問題を解決するために鋭意研究を進め、次の組成を持つ
樹脂組成物を見いだした。すなわち本発明は、(A)エ
ポキシ樹脂、(B)硬化剤として、式(1)の化学構造
式で示されるフェノール樹脂化合物を総硬化剤量に対し
て50〜100重量%含む硬化剤および
[Means for Solving the Problems] The inventors of the present invention have conducted extensive studies to solve these problems and found a resin composition having the following composition. That is, the present invention relates to (A) an epoxy resin, (B) a curing agent containing a phenol resin compound represented by the chemical structural formula (1) as a curing agent in an amount of 50 to 100% by weight based on the total amount of the curing agent,

【0006】[0006]

【化3】 [Chemical 3]

【0007】(C)無機充填材を必須成分とし、(C)
無機充填材が全組成物中70〜90重量%である半導体
封止用樹脂組成物である。本発明に用いられる(A)エ
ポキシ樹脂はビスフェノール型、フェノールノボラック
型、オルソクレゾールノボラック型、トリスフェニルメ
タン型、ナフタレン骨格含有型等各種のエポキシ樹脂が
適用可能であり、2種以上併用しても差し支えないが、
特に式(2)に示したビフェニル型エポキシを用いると
エポキシ樹脂自体の溶融粘度が低いため流動性を損なう
ことなく、無機充填材を多量に配合でき、延いては高強
度で吸湿量の少ない耐半田ストレス性に優れた樹脂組成
物が得られる。
(C) Inorganic filler as an essential component, (C)
It is a resin composition for semiconductor encapsulation in which the inorganic filler is 70 to 90% by weight in the whole composition. As the epoxy resin (A) used in the present invention, various epoxy resins such as bisphenol type, phenol novolac type, orthocresol novolac type, trisphenylmethane type, and naphthalene skeleton-containing type can be applied, and even if two or more kinds are used in combination. It doesn't matter, but
In particular, when the biphenyl type epoxy represented by the formula (2) is used, the epoxy resin itself has a low melt viscosity, so that a large amount of an inorganic filler can be blended without impairing the fluidity, and by extension, a high strength and a low moisture absorption resistance. A resin composition having excellent solder stress properties can be obtained.

【0008】[0008]

【化4】 (R1、R2、R3、R4はHまたはCH3[Chemical 4] (R 1 , R 2 , R 3 and R 4 are H or CH 3 )

【0009】ビフェニル型エポキシを用いる場合には総
エポキシ量に対し50重量%以上、好ましくは70重量
%以上の使用が望ましい。50重量%未満では樹脂の低
粘度化がはかれず目的とする無機充填材の多量配合が困
難である。
When using a biphenyl type epoxy, it is desirable to use 50% by weight or more, preferably 70% by weight or more based on the total amount of epoxy. If it is less than 50% by weight, the viscosity of the resin cannot be lowered and it is difficult to mix a large amount of the desired inorganic filler.

【0010】式(1)で示される構造のフェノール樹脂
硬化剤の特徴としては、以下の2点が挙げられる。第1
の点は分子鎖中にXで示されるシクロアルカン類を有し
ていることであり、従来のフェノールノボラック樹脂に
比べ、耐湿性に優れ、また熱時可撓性に優れているとい
う効果がある。この様な可撓構造を有するシクロアルカ
ン類を分子内に取り入れると反応性が低下し、さらに硬
化物の架橋密度が低くなるために、ガラス転移温度が低
下するという問題がある。そこで、分子側鎖にフェノー
ル性水酸基を取り入れることが、第2の点であり、これ
により反応性及びガラス転移温度を向上させる効果があ
る。式(1)のnの値は1〜8であり、8を越えると流
動性が低下し成形性が悪くなる。また式(1)のXは、
単独で用いても2種類を混合して用いても差し支えな
い。 このフェノール樹脂硬化剤の使用量は、これを調
節することにより耐半田クラック性を最大限に引き出す
ことができる。耐半田クラック性の効果を出すためには
式(1)で示されるフェノール樹脂硬化剤を総フェノー
ル樹脂硬化剤量の50重量%以上好ましくは70重量%
以上の使用が望ましい。50重量%未満だと、低吸湿性
と熱時可撓性が得られず、耐半田クラック特性が不充分
である。
The characteristics of the phenol resin curing agent having the structure represented by the formula (1) include the following two points. First
The point is that it has a cycloalkane represented by X in the molecular chain, and has an effect that it is superior in moisture resistance and is excellent in flexibility when heated, as compared with the conventional phenol novolac resin. . When cycloalkanes having such a flexible structure are incorporated into the molecule, the reactivity is lowered, and further, the crosslink density of the cured product is lowered, so that the glass transition temperature is lowered. Therefore, the second point is to incorporate a phenolic hydroxyl group into the side chain of the molecule, which has the effect of improving the reactivity and the glass transition temperature. The value of n in the formula (1) is from 1 to 8, and if it exceeds 8, the fluidity decreases and the moldability deteriorates. Further, X in the formula (1) is
They may be used alone or as a mixture of two kinds. By adjusting the amount of the phenol resin curing agent used, solder crack resistance can be maximized. In order to obtain the effect of solder crack resistance, the phenol resin curing agent represented by the formula (1) is used in an amount of 50% by weight or more, preferably 70% by weight or more, based on the total amount of the phenol resin curing agent.
The above use is desirable. If it is less than 50% by weight, low hygroscopicity and flexibility during heating cannot be obtained, and the solder crack resistance is insufficient.

【0011】式(1)で示される変性フェノール樹脂硬
化剤以外に他のフェノール樹脂系硬化剤を併用する場
合、用いるフェノール樹脂系硬化剤とはフェノール性水
酸基を有する化合物全般をいう。例えば、ビスフェノー
ルA、ビスフェノールF、フェノールノボラック樹脂、
クレゾールノボラック樹脂、フェノールアラルキル樹脂
等を用いることができる。これら併用されるフェノール
樹脂は、硬化性の調整、可撓性の付与等の目的で適宜使
用されるが流動性の調整ではビスフェノールFや狭低分
子量フェノールノボラック樹脂等の低分子化合物が好適
である。
When another phenol resin-based curing agent is used in combination with the modified phenol resin-based curing agent represented by the formula (1), the phenol resin-based curing agent to be used refers to all compounds having a phenolic hydroxyl group. For example, bisphenol A, bisphenol F, phenol novolac resin,
Cresol novolac resin, phenol aralkyl resin and the like can be used. The phenol resin used in combination is appropriately used for the purpose of adjusting the curability and imparting flexibility, but for adjusting the fluidity, a low molecular compound such as bisphenol F or a narrow low molecular weight phenol novolac resin is preferable. .

【0012】本発明に用いる無機充填材としては、溶融
シリカ粉末、結晶シリカ粉末、アルミナ粉末、水和アル
ミナ粉末、窒化珪素粉末、炭酸カルシウム粉末等が挙げ
られ、特に溶融シリカ粉末が好ましい。無機充填材の配
合量は70〜90重量%の範囲が好ましい。70重量%
以下の場合は吸湿量が多くなり、また熱膨張係数も大き
く実装時の熱ストレスに耐えられない。また90重量%
以上になると流動特性が劣化し実用不可となる。
Examples of the inorganic filler used in the present invention include fused silica powder, crystalline silica powder, alumina powder, hydrated alumina powder, silicon nitride powder and calcium carbonate powder, and fused silica powder is particularly preferred. The content of the inorganic filler is preferably 70 to 90% by weight. 70% by weight
In the following cases, the amount of moisture absorption is large, and the coefficient of thermal expansion is large, so that it cannot withstand the thermal stress during mounting. 90% by weight
If it becomes the above, the flow characteristics will deteriorate and it will become impractical.

【0013】本発明の封止用エポキシ樹脂組成物はエポ
キシ樹脂、硬化剤及び無機充填材を必須成分とするが、
これ以外に必要に応じて硬化促進剤、シランカップリン
グ剤、ブロム化エポキシ樹脂、三酸化アンチモン、ヘキ
サブロムベンゼン等の難燃剤、カーボンブラック、ベン
ガラ等の着色剤、天然ワックス、合成ワックス等の離型
剤およびシリコーンオイル、ゴム等の低応力添加剤等の
種々の添加剤を適宜配合しても差し支えない。又、本発
明の封止用エポキシ樹脂組成物を成形材料として製造す
るには、エポキシ樹脂、硬化剤、硬化促進剤、充填剤、
その他の添加剤をミキサー等により十分に均一混合した
後、さらに熱ロールまたはニーダー等で溶融混合し、冷
却後粉砕して成形材料とすることができる。これらの成
形材料は電子部品あるいは電気部品の封止、被覆、絶縁
等に適用することができる。
The epoxy resin composition for encapsulation of the present invention contains an epoxy resin, a curing agent and an inorganic filler as essential components.
In addition to these, curing accelerators, silane coupling agents, brominated epoxy resins, flame retardants such as antimony trioxide and hexabromobenzene, colorants such as carbon black and red iron oxide, natural wax, synthetic wax, etc. may be added as necessary. Various additives such as mold agents and low stress additives such as silicone oil and rubber may be appropriately blended. Further, in order to produce the encapsulating epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent, a curing accelerator, a filler,
After other additives are sufficiently uniformly mixed with a mixer or the like, they are further melt-mixed with a hot roll or a kneader, cooled and pulverized to obtain a molding material. These molding materials can be applied to sealing, coating, insulating, etc. of electronic parts or electric parts.

【0014】[0014]

【実施例】以下に本発明を実施例で示す。配合割合は重
量部とする。 実施例1〜6、比較例1〜4 (A)エポキシ樹脂 オルソクレゾールノボラック型エポキシ樹脂(エポ
キシ当量200、軟化点65℃) ビフェニル型エポキシ:3,3’,5,5’−テト
ラメチル−4,4’−ジヒドロキシビフェニルグリシジ
ルエーテル(エポキシ当量195) (B)フェノール樹脂硬化剤 式(3)で示されるフェノール樹脂(水酸基当量1
75、軟化点80℃)
EXAMPLES The present invention will be described below with reference to examples. The mixing ratio is parts by weight. Examples 1 to 6 and Comparative Examples 1 to 4 (A) Epoxy resin Orthocresol novolac type epoxy resin (epoxy equivalent 200, softening point 65 ° C.) Biphenyl type epoxy: 3,3 ′, 5,5′-tetramethyl-4 , 4'-Dihydroxybiphenyl glycidyl ether (epoxy equivalent 195) (B) Phenolic resin curing agent Phenolic resin represented by the formula (3) (hydroxyl equivalent 1
75, softening point 80 ° C)

【0015】[0015]

【化5】 [Chemical 5]

【0016】 式(4)で示されるフェノール樹脂
(水酸基当量180、軟化点80℃)
Phenolic resin represented by the formula (4) (hydroxyl group equivalent 180, softening point 80 ° C.)

【0017】[0017]

【化6】 [Chemical 6]

【0018】 フェノールノボラック樹脂(水酸基当
量105、軟化点80℃) 式(5)で示されるフェノールアラルキル樹脂(水
酸基当量180、軟化点80℃)
Phenol novolac resin (hydroxyl group equivalent 105, softening point 80 ° C.) Phenol aralkyl resin represented by the formula (5) (hydroxyl group equivalent 180, softening point 80 ° C.)

【0019】[0019]

【化7】 [Chemical 7]

【0020】(C)無機充填材 溶融シリカ粉末(平均粒子径14μm) (D)その他原料 硬化促進剤:トリフェニルホスフィン 離型剤:カルナバワックス を表1に示したそれぞれの割合でミキサーで常温で混合
し、70〜100℃で2軸ロールにより混練し、冷却後
粉砕し成形材料とし、これをタブレット化して半導体封
止用エポキシ樹脂組成物を得た。この組成物を低圧トラ
ンスファー成形機(成形条件:175℃、70kg/c
m2、120秒)を用いて成形し、得られた成形品を17
5℃、8時間で後硬化し評価した。結果を表1に示す。
(C) Inorganic filler Fused silica powder (average particle size 14 μm) (D) Other raw materials Curing accelerator: triphenylphosphine Release agent: carnauba wax The mixture was mixed, kneaded with a biaxial roll at 70 to 100 ° C., cooled and pulverized to obtain a molding material, which was tableted to obtain an epoxy resin composition for semiconductor encapsulation. A low-pressure transfer molding machine (molding condition: 175 ° C., 70 kg / c)
m 2 for 120 seconds) and the resulting molded product
It was post-cured at 5 ° C. for 8 hours and evaluated. The results are shown in Table 1.

【0021】評価方法 *1 スパイラルフロー EMMI−I−66に準じたスパイラルフロー観測用金
型を用い、金型温度175℃、注入圧力70kg/cm2
硬化時間2分で測定。 *2 硬化性 ショアD硬度計を用い、金型温度175℃、硬化時間2
分で測定。 *3 耐熱性 175℃、2分の条件で成形し、175℃で8時間、後
硬化させた試験片にて熱膨張特性を測定し硬化物のガラ
ス転移温度を求めた。 *4 半田クラック性試験 成形品(チップサイズ6×6mm、52pQFP)を85
℃、85%RHの環境下で48Hr及び72Hr処理
し、その後260℃の半田槽に10秒間浸漬後、顕微鏡
で外部クラックを観察した。 *5 半田耐湿性試験 成形品(チップサイズ3×6mm模擬素子、16pSO
P)を85℃、85%RHの環境下で72Hr処理し、
その後260℃の半田槽に10秒間浸漬後、プレッシャ
ークッカー試験(125℃、100%RH)をおこな
い、回路のオープン不良数を測定した。
Evaluation method * 1 Spiral flow Using a spiral flow observation mold according to EMMI-I-66, mold temperature 175 ° C., injection pressure 70 kg / cm 2 ,
Measured at a curing time of 2 minutes. * 2 Curability Using a Shore D hardness meter, mold temperature 175 ° C, curing time 2
Measured in minutes. * 3 Heat resistance A glass transition temperature of the cured product was determined by measuring the thermal expansion characteristics of a test piece which was molded under the conditions of 175 ° C. for 2 minutes and post-cured at 175 ° C. for 8 hours. * 4 Solder crack resistance test Molded product (chip size 6x6mm, 52pQFP) 85
After 48 hours and 72 hours of treatment in an environment of 85 ° C. and 85% RH, and after immersion in a solder bath at 260 ° C. for 10 seconds, external cracks were observed with a microscope. * 5 Solder moisture resistance test Molded product (chip size 3 x 6 mm simulated element, 16 pSO
P) is treated for 72 hours in an environment of 85 ° C. and 85% RH,
Then, after dipping in a solder bath at 260 ° C. for 10 seconds, a pressure cooker test (125 ° C., 100% RH) was performed to measure the number of open defects in the circuit.

【0022】[0022]

【表1】 [Table 1]

【0023】[0023]

【発明の効果】本発明によると従来技術では得ることが
できなかった耐半田ストレス性を有するエポキシ樹脂組
成物を得ることができるので、半田付け工程による急激
な温度変化による熱ストレスを受けた時の耐クラック性
に非常に優れ、更に耐湿性が良好なことから電子、電気
部品の封止用、被覆用、絶縁用等に用いた場合、特に表
面実装パッケージに搭載された高集積大型チップICに
おいて非常に信頼性を必要とする製品について好適であ
る。
According to the present invention, it is possible to obtain an epoxy resin composition having a soldering stress resistance which could not be obtained by the prior art. Therefore, when a thermal stress due to a rapid temperature change due to a soldering process is received. Has excellent crack resistance and good moisture resistance, so when used for encapsulation, coating, insulation, etc. of electronic and electrical parts, it is a highly integrated large chip IC mounted in a surface mount package. It is suitable for products that require extremely high reliability.

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 23/31 Continuation of front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/29 23/31

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)エポキシ樹脂、(B)硬化剤とし
て、式(1)の化学構造式で示されるフェノール樹脂化
合物を総硬化剤量に対して50〜100重量%含む硬化
剤および 【化1】 (C)無機充填材を必須成分とし、(C)無機充填材が
全組成物中70〜90重量%であることを特徴とする半
導体封止用樹脂組成物。
1. A curing agent containing (A) an epoxy resin, (B) a curing agent, and a phenol resin compound represented by the chemical structural formula (1) in an amount of 50 to 100% by weight based on the total amount of the curing agent, and Chemical 1] A resin composition for semiconductor encapsulation, comprising (C) an inorganic filler as an essential component, and (C) the inorganic filler in an amount of 70 to 90% by weight based on the entire composition.
【請求項2】 (A)エポキシ樹脂が式(2)で示され
るビフェニル型エポキシで、総エポキシ樹脂量に対して
50〜100重量%であることを特徴とする請求項1記
載の半導体封止用樹脂組成物。 【化2】 (R1、R2、R3、R4はHまたはCH3
2. The semiconductor encapsulation according to claim 1, wherein the epoxy resin (A) is a biphenyl type epoxy represented by the formula (2), and is 50 to 100% by weight based on the total amount of the epoxy resin. Resin composition. [Chemical 2] (R 1 , R 2 , R 3 and R 4 are H or CH 3 )
JP30667192A 1992-11-17 1992-11-17 Resin composition for semiconductor encapsulation Expired - Fee Related JP3230771B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30667192A JP3230771B2 (en) 1992-11-17 1992-11-17 Resin composition for semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30667192A JP3230771B2 (en) 1992-11-17 1992-11-17 Resin composition for semiconductor encapsulation

Publications (2)

Publication Number Publication Date
JPH06157725A true JPH06157725A (en) 1994-06-07
JP3230771B2 JP3230771B2 (en) 2001-11-19

Family

ID=17959921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30667192A Expired - Fee Related JP3230771B2 (en) 1992-11-17 1992-11-17 Resin composition for semiconductor encapsulation

Country Status (1)

Country Link
JP (1) JP3230771B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112079978A (en) * 2020-08-31 2020-12-15 江苏东材新材料有限责任公司 DCPD-bisphenol type benzoxazine resin and copper-clad plate composition and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112079978A (en) * 2020-08-31 2020-12-15 江苏东材新材料有限责任公司 DCPD-bisphenol type benzoxazine resin and copper-clad plate composition and preparation method thereof

Also Published As

Publication number Publication date
JP3230771B2 (en) 2001-11-19

Similar Documents

Publication Publication Date Title
JP3080276B2 (en) Resin composition for semiconductor encapsulation
JPH07118366A (en) Epoxy resin composition
JP3230771B2 (en) Resin composition for semiconductor encapsulation
JP3230772B2 (en) Resin composition for semiconductor encapsulation
JP2925905B2 (en) Epoxy resin composition
JPH05206331A (en) Resin composition for sealing semiconductor
JP4020632B2 (en) Epoxy resin composition and semiconductor device
JP3008981B2 (en) Epoxy resin composition
JP2823633B2 (en) Epoxy resin composition
JP2843247B2 (en) Epoxy resin composition
JP3023023B2 (en) Resin composition for semiconductor encapsulation
JP2991847B2 (en) Resin composition for semiconductor encapsulation
JP3013511B2 (en) Epoxy resin composition for semiconductor encapsulation
JP3675571B2 (en) Epoxy resin composition for semiconductor encapsulation
JP2862777B2 (en) Epoxy resin composition
JPH07173253A (en) Epoxy resin composition
JP3093051B2 (en) Epoxy resin composition
JP3235799B2 (en) Epoxy resin composition
JP2002317102A (en) Epoxy resin composition and semiconductor device
JP3317473B2 (en) Epoxy resin composition
JP2690992B2 (en) Epoxy resin composition
JPH05105739A (en) Resin composition for sealing semiconductor
JP3093050B2 (en) Epoxy resin composition
JPH02209949A (en) Epoxy resin composition and cured material for sealing of semiconductor
JP4379977B2 (en) Epoxy resin composition and semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees