JP3230772B2 - Resin composition for semiconductor encapsulation - Google Patents

Resin composition for semiconductor encapsulation

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Publication number
JP3230772B2
JP3230772B2 JP34307492A JP34307492A JP3230772B2 JP 3230772 B2 JP3230772 B2 JP 3230772B2 JP 34307492 A JP34307492 A JP 34307492A JP 34307492 A JP34307492 A JP 34307492A JP 3230772 B2 JP3230772 B2 JP 3230772B2
Authority
JP
Japan
Prior art keywords
resin
weight
curing agent
resin composition
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP34307492A
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Japanese (ja)
Other versions
JPH06192390A (en
Inventor
明広 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
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Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP34307492A priority Critical patent/JP3230772B2/en
Publication of JPH06192390A publication Critical patent/JPH06192390A/en
Application granted granted Critical
Publication of JP3230772B2 publication Critical patent/JP3230772B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、耐半田ストレス性及び
耐湿性に優れた半導体封止用樹脂組成物に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for encapsulating a semiconductor having excellent resistance to soldering stress and moisture.

【0002】[0002]

【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品を熱硬化性樹脂で封止しているが、特
に集積回路では耐熱性、耐湿性に優れたオルソクレゾー
ルノボラックエポキシ樹脂をノボラック型フェノール樹
脂で硬化させるエポキシ樹脂組成物が用いられてきた。
しかし近年の電子機器の小型・軽量化・高性能化の市場
動向において、半導体の高集積化も年々進み、パッケー
ジにおいては小型・薄型の表面実装タイプが主流となり
つつあり、また半導体の高集積化に伴うチップの大型化
から封止樹脂への要求は益々厳しいものとなり、従来の
樹脂組成物では信頼性の確保が困難になってきている。
これは半導体の実装方法が従来のピン挿入型から表面実
装型(VPSリフロー型、IRリフロー型、半田浸漬法
等)に変わることにより、半田浸漬の工程において急激
に200℃以上の高温にさらされることになりパッケー
ジが割れたり、チップと封止樹脂の界面剥離が生じ、耐
湿性が劣化し信頼性が低くなるといった問題が起きる為
であり、小型・薄型パッケージでは一層影響が大きくな
る為である。この様な状況から、半田浸漬等の厳しい条
件においても耐クラック性、耐湿性に優れた高信頼性の
樹脂の開発が急がれている。
2. Description of the Related Art Conventionally, electronic components such as diodes, transistors, and integrated circuits are sealed with a thermosetting resin. In particular, in an integrated circuit, ortho-cresol novolak epoxy resin having excellent heat resistance and moisture resistance is made of a novolak type. Epoxy resin compositions cured with phenolic resins have been used.
However, with the recent trend in the market for smaller, lighter, and higher-performance electronic devices, the integration of semiconductors is increasing year by year, and small and thin surface-mount packages are becoming mainstream in packages. With the increase in size of chips accompanying the demand, requirements for sealing resins have become increasingly severe, and it has become difficult to ensure reliability with conventional resin compositions.
This is because the semiconductor mounting method is changed from a conventional pin insertion type to a surface mounting type (VPS reflow type, IR reflow type, solder immersion method, etc.), so that the semiconductor immersion process is rapidly exposed to a high temperature of 200 ° C. or more. This causes problems such as cracking of the package and peeling of the interface between the chip and the sealing resin, deteriorating moisture resistance and lowering reliability, and further increasing the effect on small and thin packages. . Under such circumstances, development of a highly reliable resin having excellent crack resistance and moisture resistance even under severe conditions such as solder immersion is urgently required.

【0003】これらの問題を解決するために半田付け時
の熱衝撃を緩和する目的で、熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や各種シリコーン
化合物の添加(特開昭62−11585号公報、62−
116654号公報、62−128162号公報)、さ
らにはシリコーン変性(特開昭62−136860号公
報)などの手法で対応しているが、いずれも半田浸漬時
にパッケージにクラックが発生し信頼性の優れた半導体
封止用樹脂組成物を得るまでには至らなかった。一方、
半田浸漬時の耐半田クラック性に優れた半導体封止用樹
脂組成物を得るために、硬化剤として式(3)で示され
るフェノールアラルキル樹脂の使用が検討されてきてお
り、
In order to solve these problems, addition of thermoplastic oligomers (Japanese Patent Laid-Open No. 62-15849) and addition of various silicone compounds (Japanese Patent Laid-Open No. 62-15849) have been proposed for the purpose of reducing thermal shock during soldering. No. 11585, 62-
116654, 62-128162), and silicone modification (Japanese Patent Application Laid-Open No. 62-136860). However, cracks are generated in the package during solder immersion, resulting in excellent reliability. It was not possible to obtain a resin composition for semiconductor encapsulation. on the other hand,
In order to obtain a resin composition for semiconductor encapsulation having excellent resistance to solder cracking during solder immersion, use of a phenol aralkyl resin represented by the formula (3) as a curing agent has been studied.

【0004】[0004]

【化3】 Embedded image

【0005】この樹脂の使用によりリードフレームとの
密着性及び低吸水性が向上し、クラック発生が低減する
が、硬化物のガラス転移温度が、従来のフェノールノボ
ラック硬化剤系に比べ著しく低くなり、長期耐熱性が劣
るという欠点がある。
The use of this resin improves the adhesion to the lead frame and low water absorption, and reduces the occurrence of cracks. However, the glass transition temperature of the cured product is significantly lower than that of a conventional phenol novolak curing agent system. There is a disadvantage that the long-term heat resistance is poor.

【0006】[0006]

【発明が解決しようとする課題】本発明は、このような
問題に対して耐半田クラック性、耐湿性及び耐熱性が著
しく優れた半導体封止用樹脂組成物を提供するものであ
る。
An object of the present invention is to provide a resin composition for semiconductor encapsulation which is remarkably excellent in solder crack resistance, moisture resistance and heat resistance against such problems.

【0007】[0007]

【課題を解決するための手段】本発明者は、これらの問
題を解決するために鋭意研究を進め、以下の樹脂組成物
を見いだした。即ち本発明は、(A)式(1)で示され
るビフェニル型エポキシを総エポキシ樹脂量に対して3
0〜100重量%含む樹脂、
Means for Solving the Problems The present inventor has made intensive studies to solve these problems, and has found the following resin compositions. That is, the present invention provides (A) a biphenyl type epoxy represented by the formula (1) in an amount of 3
A resin containing 0 to 100% by weight,

【0008】[0008]

【化4】 (ここでR1、R2、R3、R4は水素またはCH3で、同
一かまたは異なる原子あるいは基)
Embedded image (Where R 1 , R 2 , R 3 , R 4 are hydrogen or CH 3 and are the same or different atoms or groups)

【0009】(B)硬化剤として、式(2)で示される
フェノール樹脂を総硬化剤量に対して50〜100重量
%含む硬化剤および
(B) a curing agent containing a phenolic resin represented by the formula (2) in an amount of 50 to 100% by weight based on the total amount of the curing agent;

【0010】[0010]

【化5】 (ここでXはパラキシリレン、n=1〜8)Embedded image (Where X is para-xylylene, n = 1 to 8)

【0011】(C)無機充填材を必須成分とし、(C)
無機充填材が全組成物中70〜90重量%である半導体
封止用樹脂組成物である。
(C) an inorganic filler as an essential component;
The resin composition for semiconductor encapsulation wherein the inorganic filler is 70 to 90% by weight of the total composition.

【0012】本発明に用いられる式(1)のビフェニル
型エポキシは、エポキシ自体の溶融粘度が低いために流
動性を損なうことなく、無機充填材を多量に配合でき、
延いては高強度かつ高靭性であり、吸湿量の少ない耐半
田ストレス性に優れた特徴を有する。式(1)の使用量
は、これを調節することにより、その効果を最大限に引
き出すことができる。即ち、その使用量は総エポキシ樹
脂量に対して30〜100重量%、好ましくは50重量
%以上が望ましい。30重量%未満では樹脂の低粘度化
が図れず目的とする無機充填材の多量配合が困難でり、
高強度、高靭性、低吸湿性の特性を発揮できない。更に
式(1)中のR1、R2、R3、R4はCH3が好ましい。
併用する他のエポキシ樹脂としてはビスフェノール型、
フェノールノボラック型、オルソクレゾールノボラック
型、トリスフェニルメタン型、ナフタレン骨格含有型等
各種のものが適用可能であり、単独または混合して用い
ても差し支えない。
The biphenyl type epoxy of the formula (1) used in the present invention can incorporate a large amount of an inorganic filler without impairing fluidity due to the low melt viscosity of the epoxy itself.
In addition, it has high strength and high toughness, and is characterized by low moisture absorption and excellent resistance to solder stress. By adjusting the amount of use of the formula (1), the effect can be maximized. That is, the amount used is preferably 30 to 100% by weight, preferably 50% by weight or more based on the total amount of the epoxy resin. If it is less than 30% by weight, it is difficult to reduce the viscosity of the resin, and it is difficult to mix a large amount of the intended inorganic filler,
High strength, high toughness and low hygroscopic properties cannot be exhibited. Further, in formula (1), R 1 , R 2 , R 3 and R 4 are preferably CH 3 .
Other epoxy resins used in combination are bisphenol type,
Various types such as phenol novolak type, orthocresol novolak type, trisphenylmethane type and naphthalene skeleton-containing type can be applied, and they may be used alone or in combination.

【0013】式(2)で示される構造のフェノール樹脂
硬化剤の特徴としては、以下の2点が挙げられる。第1
の点は分子鎖中のXで示されるバラキシリレンを有して
いることであり、従来のフェノールノボラック樹脂に比
べ、耐湿性に優れ、また熱時可撓性に優れているという
効果がある。この様な可撓構造を有するパラキシリレン
を分子内に取り入れると反応性が低下し、さらに硬化物
の架橋密度が低くなるために、ガラス転移温度が低下す
るという問題がある。そこで、分子側鎖にフェノール性
水酸基を多く取り入れるために、フェノール単核体では
なくビスフェノール類を導入していることが、第2の点
であり、これにより反応性及びガラス転移温度を向上さ
せる効果がある。式(2)のnの値は1〜8であり、8
を越えると流動性が低下し成形性が悪くなる。
The phenol resin curing agent having the structure represented by the formula (2) has the following two features. First
The point is that it has valaxylylene represented by X in the molecular chain, and has an effect of being superior in moisture resistance and excellent in flexibility when heated as compared with a conventional phenol novolak resin. When paraxylylene having such a flexible structure is incorporated into the molecule, the reactivity is lowered, and the crosslink density of the cured product is lowered, so that the glass transition temperature is lowered. Therefore, the second point is that bisphenols are introduced instead of phenol mononuclear to introduce a large amount of phenolic hydroxyl groups into the molecular side chain, thereby improving the reactivity and the glass transition temperature. There is. The value of n in Expression (2) is 1 to 8, and 8
If it exceeds, the fluidity is reduced and the moldability is deteriorated.

【0014】このフェノール樹脂硬化剤の使用量は、こ
れを調節することにより耐半田クラック性を最大限に引
き出すことができる。耐半田クラック性の効果を出すた
めには式(2)で示されるフェノール樹脂硬化剤を総フ
ェノール樹脂硬化剤量の50重量%以上、好ましくは7
0重量%以上の使用が望ましい。50重量%未満だと、
低吸湿性と熱時可撓性が得られず、耐半田クラック特性
が不充分である。
By adjusting the amount of the phenol resin curing agent used, the solder crack resistance can be maximized. In order to obtain the effect of the solder crack resistance, the phenol resin curing agent represented by the formula (2) is used in an amount of 50% by weight or more, preferably 7% by weight of the total amount of the phenol resin curing agent.
It is desirable to use 0% by weight or more. If it is less than 50% by weight,
Low hygroscopicity and flexibility under heat cannot be obtained, and solder crack resistance is insufficient.

【0015】式(2)で示されるフェノール樹脂硬化剤
と併用される他のフェノール樹脂系硬化剤としてはフェ
ノール性水酸基を有する化合物全般をいう。例えば、ビ
スフェノールA、ビスフェノールF、フェノールノボラ
ック樹脂、クレゾールノボラック樹脂、フェノールアラ
ルキル樹脂等が挙げられる。これら併用されるフェノー
ル樹脂は、硬化性の調整、可撓性の付与等の目的で適宜
使用されるが流動性の調整ではビスフェノールFや狭低
分子量フェノールノボラック樹脂等の低分子化合物が好
適である。
The other phenolic resin-based curing agents used in combination with the phenolic resin curing agent of the formula (2) include all compounds having a phenolic hydroxyl group. Examples include bisphenol A, bisphenol F, phenol novolak resin, cresol novolak resin, phenol aralkyl resin, and the like. These phenolic resins used in combination are appropriately used for the purpose of adjusting curability, imparting flexibility, etc., but for adjusting fluidity, low molecular weight compounds such as bisphenol F and narrow low molecular weight phenol novolak resins are suitable. .

【0016】本発明に用いる無機充填材としては、溶融
シリカ粉末、結晶シリカ粉末、アルミナ粉末、水和アル
ミナ粉末、窒化珪素粉末、炭酸カルシウム粉末等が挙げ
られ、特に溶融シリカ粉末が好ましい。無機充填材の配
合量は70〜90重量%の範囲が好ましい。70重量%
以下の場合は吸湿量が多くなり、また熱膨張係数も大き
く実装時の熱ストレスに耐えられない。また90重量%
以上になると流動特性が劣化し実用不可となる。
Examples of the inorganic filler used in the present invention include fused silica powder, crystalline silica powder, alumina powder, hydrated alumina powder, silicon nitride powder, calcium carbonate powder and the like, and particularly preferred is fused silica powder. The amount of the inorganic filler is preferably in the range of 70 to 90% by weight. 70% by weight
In the following cases, the amount of moisture absorption is large, and the coefficient of thermal expansion is too large to withstand thermal stress during mounting. 90% by weight
Above this, the flow characteristics deteriorate, making it impractical.

【0017】本発明の半導体封止用樹脂組成物はエポキ
シ樹脂、硬化剤及び無機充填材を必須成分とするが、こ
れ以外に必要に応じて硬化促進剤、シランカップリング
剤、ブロム化エポキシ樹脂、三酸化アンチモン、ヘキサ
ブロムベンゼン等の難燃剤、カーボンブラック、ベンガ
ラ等の着色剤、天然ワックス、合成ワックス等の離型剤
およびシリコーンオイル、ゴム等の低応力添加剤等の種
々の添加剤を適宜配合しても差し支えない。又、本発明
の半導体封止用樹脂組成物を成形材料として製造するに
は、エポキシ樹脂、硬化剤、無機充填剤、硬化促進剤、
その他の添加剤をミキサー等により十分に均一混合した
後、さらに熱ロールまたはニーダー等で溶融混合し、冷
却後粉砕して成形材料とすることができる。これらの成
形材料は電子部品あるいは電気部品の封止、被覆、絶縁
等に適用することができる。
The resin composition for encapsulating a semiconductor of the present invention contains an epoxy resin, a curing agent and an inorganic filler as essential components. In addition to this, a curing accelerator, a silane coupling agent, a brominated epoxy resin may be used if necessary. Various additives such as flame retardants such as antimony trioxide and hexabromobenzene, coloring agents such as carbon black and red iron oxide, release agents such as natural wax and synthetic wax, and low stress additives such as silicone oil and rubber. It may be properly compounded. Further, in order to produce the resin composition for semiconductor encapsulation of the present invention as a molding material, an epoxy resin, a curing agent, an inorganic filler, a curing accelerator,
After sufficiently mixing other additives with a mixer or the like, the mixture is further melt-mixed with a hot roll or a kneader or the like, cooled and pulverized to obtain a molding material. These molding materials can be applied to sealing, coating, insulating and the like of electronic parts or electric parts.

【0018】[0018]

【実施例】以下に本発明を実施例で示す。配合割合は重
量部とする。 実施例1〜6、比較例1〜4 (A)エポキシ樹脂 オルソクレゾールノボラック型エポキシ樹脂(エポ
キシ当量200、軟化点65℃) ビフェニル型エポキシ:3,3’,5,5’−テト
ラメチル−4,4’−ジヒドロキシビフェニルグリシジ
ルエーテル(エポキシ当量195) ビスフェノールAジグリシジルエーテル(エポキシ
当量200) (B)フェノール樹脂硬化剤 式(2)で示されるフェノール樹脂(水酸基当量1
75、軟化点80℃) フェノールノボラック樹
脂(水酸基当量105、軟化点80℃) 式(3)で示されるフェノールアラルキル樹脂(水
酸基当量180、軟化点80℃) (C)無機充填材 溶融シリカ粉末(平均粒子径14μm) (D)その他の原料 硬化促進剤:トリフェニルホスフィン 離型剤:カルナバワックス を表1に示したそれぞれの割合でミキサーで常温で混合
し、70〜100℃で2軸ロールにより混練し、冷却後
粉砕し成形材料とし、これをタブレット化して半導体封
止用エポキシ樹脂組成物を得た。この組成物を低圧トラ
ンスファー成形機(成形条件:175℃、70kg/c
m2、120秒)を用いて成形し、得られた成形品を17
5℃、8時間で後硬化し評価した。評価結果を表1に示
す。
The present invention will be described below by way of examples. The mixing ratio is by weight. Examples 1 to 6, Comparative Examples 1 to 4 (A) Epoxy resin ortho-cresol novolak type epoxy resin (epoxy equivalent 200, softening point 65 ° C) Biphenyl type epoxy: 3,3 ', 5,5'-tetramethyl-4 4,4'-dihydroxybiphenyl glycidyl ether (epoxy equivalent 195) bisphenol A diglycidyl ether (epoxy equivalent 200) (B) phenol resin curing agent A phenol resin represented by the formula (2) (hydroxyl equivalent 1)
75, softening point 80 ° C) Phenol novolak resin (hydroxyl equivalent 105, softening point 80 ° C) Phenol aralkyl resin represented by the formula (3) (hydroxyl equivalent 180, softening point 80 ° C) (C) Inorganic filler fused silica powder ( (D) Other raw materials Curing accelerator: Triphenylphosphine Release agent: Carnauba wax The respective proportions shown in Table 1 were mixed at room temperature with a mixer at 70-100 ° C with a biaxial roll. The mixture was kneaded, cooled and pulverized to obtain a molding material, which was tabletted to obtain an epoxy resin composition for semiconductor encapsulation. A low-pressure transfer molding machine (molding conditions: 175 ° C., 70 kg / c)
m 2 , 120 seconds).
Post-curing was performed at 5 ° C. for 8 hours and evaluated. Table 1 shows the evaluation results.

【0021】評価方法 *1 スパイラルフロー EMMI−1−66に準じたスパイラルフロー測定用金
型を用い、金型温度175℃、注入圧力70kg/cm2
硬化時間2分で測定。 *2 硬化性 ショアD硬度計を用い、金型温度175℃、硬化時間2
分で測定。 *3 耐熱性 175℃、2分の条件で成形し、175℃で8時間、後
硬化させた試験片にて熱膨張特性を測定し硬化物のガラ
ス転移温度を求めた。 *4 半田クラック性試験 成形品(チップサイズ6×6mm、52pQFP)を85
℃、85%RHの環境下で48Hr及び72Hr処理
し、その後260℃の半田槽に10秒間浸漬後、顕微鏡
で外部クラックを観察した。 *5 半田耐湿性試験 成形品(チップサイズ3×6mm模擬素子、16pSO
P)を85℃、85%RHの環境下で72Hr処理し、
その後260℃の半田槽に10秒間浸漬後、プレッシャ
ークッカー試験(125℃、100%RH)をおこな
い、回路のオープン不良数を測定した。
Evaluation method * 1 Spiral flow Using a mold for spiral flow measurement according to EMMI-1-66, mold temperature 175 ° C, injection pressure 70 kg / cm 2 ,
Measured with a curing time of 2 minutes. * 2 Curability Using a Shore D hardness meter, mold temperature 175 ° C, curing time 2
Measured in minutes. * 3 Heat resistance The glass transition temperature of the cured product was determined by measuring the thermal expansion characteristics of a test piece molded at 175 ° C. for 2 minutes and post-cured at 175 ° C. for 8 hours. * 4 Solder cracking test 85 molded products (chip size 6 × 6 mm, 52pQFP)
After 48 hours and 72 hours of treatment in an environment of 85 ° C. and 85% RH, the wafer was immersed in a solder bath at 260 ° C. for 10 seconds, and external cracks were observed with a microscope. * 5 Solder moisture resistance test Molded product (chip size 3 x 6 mm simulation element, 16 pSO
P) is treated for 72 hours in an environment of 85 ° C. and 85% RH,
Then, after dipping in a solder bath at 260 ° C. for 10 seconds, a pressure cooker test (125 ° C., 100% RH) was performed to measure the number of open defects of the circuit.

【0022】[0022]

【表1】 [Table 1]

【0023】[0023]

【発明の効果】本発明によると従来技術では得ることが
できなかった硬化性、離型性等成形性が良好で、ガラス
転移点が高く、耐半田ストレス性を有するエポキシ樹脂
組成物を得ることができるので、半田付け工程による急
激な温度変化による熱ストレスを受けた時の耐クラック
性に非常に優れ、更に耐湿性が良好なことから電子、電
気部品の封止用、被覆用、絶縁用等に用いた場合、特に
表面実装パッケージに搭載された高集積大型チップIC
において、高度の信頼性を必要とする製品に対して好適
である。
According to the present invention, it is possible to obtain an epoxy resin composition having good moldability such as curability and mold release properties, a high glass transition point, and resistance to solder stress, which could not be obtained by the prior art. It has excellent resistance to cracks when subjected to thermal stress due to rapid temperature changes during the soldering process, and because of its excellent moisture resistance, it is used for sealing, coating and insulating electronic and electrical components. In particular, when used for highly integrated large chip ICs mounted on surface mount packages
Is suitable for products that require a high degree of reliability.

フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 23/31 (58)調査した分野(Int.Cl.7,DB名) C08G 59/62 C08G 59/24 C08L 63/00 - 63/10 H01L 23/29 Continuation of the front page (51) Int.Cl. 7 identification code FI H01L 23/31 (58) Fields investigated (Int.Cl. 7 , DB name) C08G 59/62 C08G 59/24 C08L 63/00-63 / 10 H01L 23/29

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】(A)式(1)で示されるビフェニル型エ
ポキシを総エポキシ樹脂量に対して30〜100重量%
含むエポキシ樹脂、 【化1】 (ここでR1、R2、R3、R4は水素またはCH3で、同
一かまたは異なる原子あるいは基) (B)硬化剤として、式(2)で示されるフェノール樹
脂を総硬化剤量に対して50〜100重量%含む硬化剤
および 【化2】 (ここでXはパラキシリレン、n=1〜8) (C)無機充填材を必須成分とし、(C)無機充填材が
全組成物中70〜90重量%であることを特徴とする半
導体封止用樹脂組成物。
(A) 30% to 100% by weight of a biphenyl type epoxy represented by the formula (1) based on the total epoxy resin amount.
Epoxy resin, containing (Where R 1 , R 2 , R 3 , and R 4 are hydrogen or CH 3 and are the same or different atoms or groups) (B) As a curing agent, a phenol resin represented by the formula (2) is used as a total curing agent amount. And a curing agent containing 50 to 100% by weight with respect to (Where X is paraxylylene, n = 1 to 8) (C) An inorganic filler is an essential component, and (C) 70 to 90% by weight of the inorganic filler in the total composition is used for semiconductor encapsulation. Resin composition.
JP34307492A 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation Expired - Fee Related JP3230772B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34307492A JP3230772B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34307492A JP3230772B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Publications (2)

Publication Number Publication Date
JPH06192390A JPH06192390A (en) 1994-07-12
JP3230772B2 true JP3230772B2 (en) 2001-11-19

Family

ID=18358742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34307492A Expired - Fee Related JP3230772B2 (en) 1992-12-24 1992-12-24 Resin composition for semiconductor encapsulation

Country Status (1)

Country Link
JP (1) JP3230772B2 (en)

Also Published As

Publication number Publication date
JPH06192390A (en) 1994-07-12

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