JPH06112366A - Resin composition for sealing semiconductor - Google Patents
Resin composition for sealing semiconductorInfo
- Publication number
- JPH06112366A JPH06112366A JP4254472A JP25447292A JPH06112366A JP H06112366 A JPH06112366 A JP H06112366A JP 4254472 A JP4254472 A JP 4254472A JP 25447292 A JP25447292 A JP 25447292A JP H06112366 A JPH06112366 A JP H06112366A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- resin composition
- formula
- inorganic filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、耐半田ストレス性及び
耐湿性に優れた半導体封止用樹脂組成物に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation having excellent solder stress resistance and moisture resistance.
【0002】[0002]
【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品を熱硬化性樹脂で封止しているが、特
に集積回路では耐熱性、耐湿性に優れたO−クレゾール
ノボラックエポキシ樹脂をノボラック型フェノール樹脂
で硬化させるエポキシ樹脂組成物が用いられてきた。し
かし近年の電子機器の小型・軽量化・高性能化の市場動
向において、半導体の高集積化も年々進み、パッケージ
においては小型・薄型の表面実装タイプが主流と成りつ
つあり、また半導体の高集積化に伴うチップの大型化か
ら封止樹脂への要求は益々厳しいものとなり従来の樹脂
組成物では信頼性の確保が困難になってきている。これ
は半導体の実装方法が従来のピン挿入型から表面実装型
(VPSリフロー型、IRリフロー型、半田浸漬法等)
に変わる事により、半田浸漬の工程において急激に20
0℃以上の高温にさらされることになりパッケージが割
れたり、チップと封止樹脂の界面剥離が生じ、耐湿性が
劣化し信頼性が低くなるといった問題が起きる為であ
り、小型・薄型パッケージでは一層影響が大きくなる為
である。 この様な状況から、半田浸漬等の厳しい条件
においても耐クラック性、耐湿性に優れた高信頼性の樹
脂の開発が急がれている。2. Description of the Related Art Conventionally, electronic parts such as diodes, transistors and integrated circuits have been sealed with a thermosetting resin. Especially in integrated circuits, O-cresol novolac epoxy resin which is excellent in heat resistance and moisture resistance is used as a novolac resin. Epoxy resin compositions that have been cured with type phenolic resins have been used. However, due to the recent market trend of miniaturization, weight reduction and high performance of electronic equipment, the high integration of semiconductors is advancing year by year, and small and thin surface mounting type is becoming the mainstream in the package. Due to the increase in size of chips accompanying the increase in demand, the demand for sealing resin has become more and more severe, and it has become difficult to secure reliability with conventional resin compositions. This is a semiconductor mounting method from the conventional pin insertion type to surface mounting type (VPS reflow type, IR reflow type, solder dipping method, etc.)
By changing to the
This is because the package is cracked due to exposure to high temperatures of 0 ° C or higher, and the interface between the chip and the encapsulation resin peels off, resulting in deterioration of moisture resistance and reduced reliability. This is because the influence will be even greater. Under such circumstances, there is an urgent need to develop a highly reliable resin having excellent crack resistance and moisture resistance even under severe conditions such as solder immersion.
【0003】これらの問題を解決するために半田付け時
の熱衝撃を緩和する目的で、熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や各種シリコーン
化合物の添加(特開昭62−11585号公報、62−
116654号公報、62−128162号公報)、さ
らにはシリコーン変性(特開昭62−136860号公
報)などの手法で対応しているがいずれも半田浸漬時に
パッケージにクラックが発生し信頼性の優れた半導体封
止用エポキシ樹脂組成物を得るまでには至らなかった。
一方、半田浸漬時の耐半田クラック性に優れた半導体封
止用エポキシ樹脂組成物を得るために、硬化剤としてフ
ェノールアラルキル樹脂の使用(特開昭59−6766
0号公報)等が検討されてきたがフェノールアラルキル
樹脂の使用によりリードフレームとの密着性及び低吸水
性が向上し、クラック発生が低減するが、フェノールア
ラルキル硬化剤系では硬化物のガラス転移温度が、従来
のフェノールノボラック硬化剤系に比べ著しく低くな
り、長期耐熱性が劣るという欠点がある。In order to solve these problems, in order to alleviate the thermal shock at the time of soldering, addition of a thermoplastic oligomer (Japanese Patent Laid-Open No. 62-15849) and addition of various silicone compounds (Japanese Patent Laid-Open No. 62- 11585, 62-
No. 116654, 62-128162) and further silicone modification (Japanese Patent Laid-Open No. 62-136860), but all of them are excellent in reliability because cracks are generated in the package during solder immersion. It has not been possible to obtain an epoxy resin composition for semiconductor encapsulation.
On the other hand, in order to obtain an epoxy resin composition for semiconductor encapsulation which is excellent in solder crack resistance during solder immersion, use of a phenol aralkyl resin as a curing agent (Japanese Patent Laid-Open No. 59-6766).
No. 0) has been studied, but the use of a phenol aralkyl resin improves the adhesion to a lead frame and low water absorption, and reduces the occurrence of cracks. However, in the phenol aralkyl curing agent system, the glass transition temperature of the cured product is However, it has a drawback that it is significantly lower than the conventional phenol novolac curing agent system and its long-term heat resistance is inferior.
【0004】[0004]
【発明が解決しようとする課題】本発明は、このような
問題に対して耐半田クラック性、耐湿性及び耐熱性が著
しく優れた半導体封止用樹脂組成物を提供するものであ
る。SUMMARY OF THE INVENTION The present invention provides a resin composition for encapsulating a semiconductor, which is extremely excellent in solder crack resistance, moisture resistance and heat resistance against such problems.
【0005】[0005]
【課題を解決するための手段】本発明者らは、これらの
問題を解決するために鋭意研究を進め、次の組成を持つ
樹脂組成物を見いだした。すなわち本発明は、(A)エ
ポキシ樹脂、(B)硬化剤として、式(1)の化学構造
式で示される変性フェノール樹脂化合物を総硬化剤量に
対して50〜100重量%含む硬化剤および[Means for Solving the Problems] The inventors of the present invention have conducted extensive studies to solve these problems and found a resin composition having the following composition. That is, the present invention relates to (A) an epoxy resin, (B) a curing agent containing a modified phenol resin compound represented by the chemical structural formula (1) as a curing agent in an amount of 50 to 100% by weight based on the total amount of the curing agent, and
【0006】[0006]
【化3】 [Chemical 3]
【0007】(C)無機充填材を必須成分とし、(C)
無機充填材が全組成物中75〜90重量%である半導体
封止用樹脂組成物である。本発明に用いられる(A)エ
ポキシ樹脂はビスフェノール型、フェノールノボラック
型、オルソクレゾールノボラック型、トリスフェニルメ
タン型、ナフタレン骨格含有型等各種のエポキシ樹脂が
適用可能であり、2種以上併用しても差し支えないが、
特に式(2)に示したビフェニル型エポキシを用いると
エポキシ樹脂自体の溶融粘度が低いため流動性を損なう
ことなく、無機充填材を多量に配合でき、延いては高強
度で吸湿量の少ない耐半田ストレス性に優れた樹脂組成
物が得られる。(C) Inorganic filler as an essential component, (C)
It is a resin composition for semiconductor encapsulation in which the inorganic filler is 75 to 90% by weight in the whole composition. As the epoxy resin (A) used in the present invention, various epoxy resins such as bisphenol type, phenol novolac type, orthocresol novolac type, trisphenylmethane type, and naphthalene skeleton-containing type can be applied, and even if two or more kinds are used in combination. It doesn't matter, but
In particular, when the biphenyl type epoxy represented by the formula (2) is used, the epoxy resin itself has a low melt viscosity, so that a large amount of an inorganic filler can be blended without impairing the fluidity, and by extension, a high strength and a low moisture absorption resistance. A resin composition having excellent solder stress properties can be obtained.
【0008】[0008]
【化4】 (R1、R2、R3、R4はHまたはCH3)[Chemical 4] (R 1 , R 2 , R 3 and R 4 are H or CH 3 )
【0009】ビフェニル型エポキシを用いる場合には総
エポキシ量に対し50重量%以上、好ましくは70重量
%以上の使用が望ましい。50重量%未満では樹脂の低
粘度化がはかれず目的とする無機充填材の多量配合が困
難である。When using a biphenyl type epoxy, it is desirable to use 50% by weight or more, preferably 70% by weight or more based on the total amount of epoxy. If it is less than 50% by weight, the viscosity of the resin cannot be lowered and it is difficult to mix a large amount of the desired inorganic filler.
【0010】式(1)で示される構造の変性フェノール
樹脂硬化剤は分子側鎖中に芳香族環を有する化合物であ
る。側鎖中のR1〜R3の構造により若干性状は異なる
が、その特徴は従来のフェノールノボラック硬化剤と異
なり、吸湿性が低くまた熱時可撓性に優れることであ
る。この様な可撓構造を分子内に取り入れると、ともす
ればガラス転移温度の低下が生じるが、直鎖状のフェノ
ールアラルキル樹脂と異なり側鎖に大きな分子を有して
いる為、標準的なR1〜R3がHの場合でも比較的高いガ
ラス転移温度を示す。さらにR1〜R3に反応性OH基を
導入することにより硬化物の架橋密度を調整することが
可能であり、従ってさらにガラス転移温度の向上が可能
である。またR1がCH3基の場合ではより低吸湿性の性
質となる。これら側鎖中のR1〜R3の構造は同じであっ
ても異なっていてもよく、目的とする特性に従って適宜
選択できる。式(1)のl、m、nのいずれかが10を
越えると、成形時の流動性が悪化する。この変性フェノ
ール樹脂硬化剤の使用量は、これを調節することにより
耐半田クラック性を最大限に引き出すことができる。耐
半田クラック性の効果を出すためには式(1)で示され
る変性フェノール樹脂硬化剤を総フェノール樹脂硬化剤
量の50重量%以上好ましくは70重量%以上の使用が
望ましい。50重量%未満だと、低吸湿と熱時可撓性が
得られず、耐半田クラック特性が不充分である。The modified phenol resin curing agent having the structure represented by the formula (1) is a compound having an aromatic ring in the side chain of the molecule. The properties differ slightly depending on the structure of R 1 to R 3 in the side chain, but the characteristic is that, unlike conventional phenol novolac curing agents, it has low hygroscopicity and excellent flexibility when heated. If such a flexible structure is incorporated into the molecule, the glass transition temperature will be lowered, but unlike a linear phenol aralkyl resin, it has a large molecule in the side chain, and therefore, a standard R Even when 1 to R 3 are H, it shows a relatively high glass transition temperature. Further, by introducing a reactive OH group into R 1 to R 3 , the crosslink density of the cured product can be adjusted, and therefore the glass transition temperature can be further improved. Further, when R 1 is a CH 3 group, it has a lower hygroscopic property. The structures of R 1 to R 3 in these side chains may be the same or different and can be appropriately selected according to the desired characteristics. When any one of l, m, and n in the formula (1) exceeds 10, the fluidity at the time of molding deteriorates. By adjusting the amount of the modified phenol resin curing agent used, solder crack resistance can be maximized. In order to obtain the effect of solder crack resistance, it is desirable to use the modified phenol resin curing agent represented by the formula (1) in an amount of 50% by weight or more, preferably 70% by weight or more, based on the total amount of the phenol resin curing agent. If it is less than 50% by weight, low moisture absorption and flexibility at the time of heating cannot be obtained, and the solder crack resistance is insufficient.
【0011】式(1)で示される変性フェノール樹脂硬
化剤以外に他のフェノール樹脂系硬化剤を併用する場
合、用いるフェノール樹脂系硬化剤とはフェノール性水
酸基を有する化合物全般をいう。例えば、ビスフェノー
ルA、ビスフェノールF、フェノールノボラック樹脂、
クレゾールノボラック樹脂、ジシクロペンタジエン変性
フェノール樹脂、ジシクロペンタジエン変性フェノール
樹脂とフェノールノボラック及びクレゾールノボラック
樹脂との共縮合物、フェノールアラルキル樹脂等を用い
ることができる。これら併用されるフェノール樹脂は、
硬化性の調整、可撓性の付与等の目的で適宜使用される
が流動性の調整ではビスフェノールFや狭低分子量フェ
ノールノボラック樹脂等の低分子化合物が好適である。When another phenol resin-based curing agent is used in combination with the modified phenol resin-based curing agent represented by the formula (1), the phenol resin-based curing agent to be used refers to all compounds having a phenolic hydroxyl group. For example, bisphenol A, bisphenol F, phenol novolac resin,
A cresol novolac resin, a dicyclopentadiene modified phenolic resin, a co-condensate of a dicyclopentadiene modified phenolic resin with a phenol novolac or a cresol novolac resin, a phenol aralkyl resin and the like can be used. Phenolic resins used in combination with these
Although appropriately used for the purpose of adjusting curability and imparting flexibility, low molecular compounds such as bisphenol F and narrow low molecular weight phenol novolac resin are suitable for adjusting fluidity.
【0012】本発明に用いる無機充填材としては、溶融
シリカ粉末、結晶シリカ粉末、アルミナ粉末、水和アル
ミナ粉末、窒化珪素粉末、炭酸カルシウム粉末等が挙げ
られ、特に溶融シリカ粉末が好ましい。無機充填材の配
合量は75〜90重量%の範囲が好ましい。75重量%
以下の場合は吸湿量が多くなり、また熱膨張係数も大き
く実装時の熱ストレスに耐えられない。また90重量%
以上になると流動特性が劣化し実用不可となる。Examples of the inorganic filler used in the present invention include fused silica powder, crystalline silica powder, alumina powder, hydrated alumina powder, silicon nitride powder and calcium carbonate powder, and fused silica powder is particularly preferred. The compounding amount of the inorganic filler is preferably in the range of 75 to 90% by weight. 75% by weight
In the following cases, the amount of moisture absorption is large, and the coefficient of thermal expansion is large, so that it cannot withstand the thermal stress during mounting. 90% by weight
If it becomes the above, the flow characteristics will deteriorate and it will become impractical.
【0013】本発明の封止用エポキシ樹脂組成物はエポ
キシ樹脂、硬化剤及び無機充填材を必須成分とするが、
これ以外に必要に応じて硬化促進剤、シランカップリン
グ剤、ブロム化エポキシ樹脂、三酸化アンチモン、ヘキ
サブロムベンゼン等の難燃剤、カーボンブラック、ベン
ガラ等の着色剤、天然ワックス、合成ワックス等の離型
剤およびシリコーンオイル、ゴム等の低応力添加剤等の
種々の添加剤を適宜配合しても差し支えない。又、本発
明の封止用エポキシ樹脂組成物を成形材料として製造す
るには、エポキシ樹脂、硬化剤、硬化促進剤、充填剤、
その他の添加剤をミキサー等により十分に均一混合した
後、さらに熱ロールまたはニーダー等で溶融混合し、冷
却後粉砕して成形材料とすることができる。これらの成
形材料は電子部品あるいは電気部品の封止、被覆、絶縁
等に適用することができる。The epoxy resin composition for encapsulation of the present invention contains an epoxy resin, a curing agent and an inorganic filler as essential components.
In addition to these, curing accelerators, silane coupling agents, brominated epoxy resins, flame retardants such as antimony trioxide and hexabromobenzene, colorants such as carbon black and red iron oxide, natural wax, synthetic wax, etc. may be added as necessary. Various additives such as mold agents and low stress additives such as silicone oil and rubber may be appropriately blended. Further, in order to produce the encapsulating epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent, a curing accelerator, a filler,
After other additives are sufficiently uniformly mixed with a mixer or the like, they are further melt-mixed with a hot roll or a kneader, cooled and pulverized to obtain a molding material. These molding materials can be applied to sealing, coating, insulating, etc. of electronic parts or electric parts.
【0014】[0014]
【実施例】以下に本発明を実施例で示す。配合割合は重
量部とする。 実施例1〜4、比較例1〜3 (A)エポキシ樹脂 オルソクレゾールノボラック型エポキシ樹脂(エポ
キシ当量200、軟化点65℃) ビフェニル型エポキシ樹脂:3,3’,5,5’−
テトラメチル−4,4’−ジヒドロキシビフェニルグリ
シジルエーテル (B)フェノール樹脂硬化剤 式(1)で示される変性フェノール樹脂(水酸基当
量212、軟化点80℃、R1、R2、R3はH) フェノールノボラック樹脂(水酸基当量104、軟
化点95℃) フェノールアラルキル樹脂(水酸基当量180、軟
化点80℃) (C)無機充填材 溶融シリカ粉末(平均粒子径14μm) (D)その他原料 硬化促進剤:トリフェニルホスフィン 離型剤:カルナバワックス を表1に示したそれぞれの割合でミキサーで常温で混合
し、70〜100℃で2軸ロールにより混練し、冷却後
粉砕し成形材料とし、これをタブレット化して半導体封
止用エポキシ樹脂組成物を得た。この組成物を低圧トラ
ンスファー成形機(成形条件:175℃、70kg/c
m2、120秒)を用いて成形し、得られた成形品を17
5℃、8時間で後硬化し評価した。結果を表1に示す。EXAMPLES The present invention will be described below with reference to examples. The mixing ratio is parts by weight. Examples 1 to 4 and Comparative Examples 1 to 3 (A) Epoxy resin Orthocresol novolac type epoxy resin (epoxy equivalent 200, softening point 65 ° C) Biphenyl type epoxy resin: 3,3 ', 5,5'-
Tetramethyl-4,4′-dihydroxybiphenylglycidyl ether (B) Phenolic resin curing agent Modified phenol resin represented by the formula (1) (hydroxyl group equivalent 212, softening point 80 ° C., R 1 , R 2 and R 3 are H). Phenol novolac resin (hydroxyl group equivalent 104, softening point 95 ° C) Phenol aralkyl resin (hydroxyl group equivalent 180, softening point 80 ° C) (C) Inorganic filler fused silica powder (average particle size 14 µm) (D) Other raw materials Curing accelerator: Triphenylphosphine release agent: Carnauba wax was mixed in the respective proportions shown in Table 1 at room temperature with a mixer, kneaded with a twin-screw roll at 70 to 100 ° C, cooled and pulverized to obtain a molding material, which was tableted. Thus, an epoxy resin composition for semiconductor encapsulation was obtained. A low-pressure transfer molding machine (molding condition: 175 ° C., 70 kg / c)
m 2 for 120 seconds) and the resulting molded product
It was post-cured at 5 ° C. for 8 hours and evaluated. The results are shown in Table 1.
【0015】評価方法 *1 スパイラルフロー EMMI−I−66に準じたスパイラルフロー観測用金
型を用い、金型温度175℃、注入圧力70kg/cm2、
硬化時間2分で測定。 *2 耐熱性 175℃2分の条件で成形し、175℃8時間後硬化さ
せた試験片にて熱膨張特性を測定し硬化物のガラス転移
温度を求めた。 *3 半田クラック性試験 1:成形品(チップサイズ36mm2、パッケージ厚2.
05mm)10個につき85℃、85%RHの水蒸気下で
72Hr処理後、VPS式半田処理装置に215℃、9
0秒間保持し、外部クラックの有無を観察した。 2:成形品(チップサイズ36mm2、パッケージ厚2.
05mm)10個につき85℃、85%RHの水蒸気下で
72Hr処理後、赤外線リフロー式半田処理装置に24
0℃、10秒間保持し、外部クラックの有無を観察し
た。 *4 半田耐湿性試験 模擬素子を搭載した16pSOPパッケージを成形硬化
させ85℃、85%RHの環境下で72Hr処理し、そ
の後260℃の半田槽に10秒間浸漬後、プレッシャー
クッカー試験(125℃、100%RH)をおこない、
回路のオープン不良数を測定した。Evaluation method * 1 Spiral flow Using a spiral flow observation mold according to EMMI-I-66, mold temperature 175 ° C, injection pressure 70 kg / cm 2 ,
Measured at a curing time of 2 minutes. * 2 Heat resistance A glass transition temperature of the cured product was determined by measuring the thermal expansion characteristics of a test piece that was molded under the conditions of 175 ° C. for 2 minutes and post-cured at 175 ° C. for 8 hours. * 3 Solder crack resistance test 1: Molded product (chip size 36 mm 2 , package thickness 2.
(05 mm) 10 pieces are treated at 85 ° C and steam of 85% RH for 72 hours, and then treated with a VPS soldering machine at 215 ° C, 9 hours.
It was held for 0 seconds and observed for external cracks. 2: Molded product (chip size 36 mm 2 , package thickness 2.
(05 mm) After 10 pieces of 72 hours under 85 ° C. and 85% RH water vapor, the infrared reflow soldering equipment will be used for 24 hours.
It was held at 0 ° C. for 10 seconds and observed for external cracks. * 4 Solder moisture resistance test A 16pSOP package equipped with a simulated element is molded and cured, treated for 72 hours in an environment of 85 ° C and 85% RH, then immersed in a solder bath at 260 ° C for 10 seconds, and then subjected to a pressure cooker test (125 ° C, 100% RH)
The number of open defects in the circuit was measured.
【0016】[0016]
【表1】 [Table 1]
【0017】[0017]
【発明の効果】本発明による半導体封止用樹脂組成物
は、半田クラック性、耐湿性及び耐熱性に顕著に優れて
いることにより表面実装封止用樹脂組成物として工業的
価値は極めて高い。Industrial Applicability The resin composition for semiconductor encapsulation according to the present invention is remarkably excellent in solder cracking property, moisture resistance and heat resistance, and thus has an extremely high industrial value as a surface mounting encapsulation resin composition.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C08K 3/00 C08L 63/00 NKT 8830−4J ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication C08K 3/00 C08L 63/00 NKT 8830-4J
Claims (2)
て、式(1)の化学構造式で示される変性フェノール樹
脂化合物を総硬化剤量に対して50〜100重量%含む
硬化剤および 【化1】 (C)無機充填材を必須成分とし、(C)無機充填材が
全組成物中75〜90重量%であることを特徴とする半
導体封止用樹脂組成物。1. A curing agent containing (A) an epoxy resin, (B) a curing agent, and a modified phenol resin compound represented by the chemical structural formula (1) in an amount of 50 to 100% by weight based on the total amount of the curing agent. [Chemical 1] A resin composition for semiconductor encapsulation, wherein (C) the inorganic filler is an essential component, and (C) the inorganic filler is 75 to 90% by weight in the whole composition.
るビフェニル系エポキシ樹脂で、総エポキシ樹脂量に対
して50〜100重量%であることを特徴とする請求項
1記載の半導体封止用樹脂組成物。 【化2】 (R1、R2、R3、R4はHまたはCH3)2. The semiconductor encapsulation according to claim 1, wherein the epoxy resin (A) is a biphenyl epoxy resin represented by the formula (2), and is 50 to 100% by weight based on the total amount of the epoxy resin. Stopping resin composition. [Chemical 2] (R 1 , R 2 , R 3 and R 4 are H or CH 3 )
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04254472A JP3080276B2 (en) | 1992-09-24 | 1992-09-24 | Resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04254472A JP3080276B2 (en) | 1992-09-24 | 1992-09-24 | Resin composition for semiconductor encapsulation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06112366A true JPH06112366A (en) | 1994-04-22 |
JP3080276B2 JP3080276B2 (en) | 2000-08-21 |
Family
ID=17265520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04254472A Expired - Fee Related JP3080276B2 (en) | 1992-09-24 | 1992-09-24 | Resin composition for semiconductor encapsulation |
Country Status (1)
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JP (1) | JP3080276B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100251853B1 (en) * | 1996-08-29 | 2000-04-15 | 다니구찌 이찌로오, 기타오카 다카시 | Epoxy resin composition and semiconductor device encapsulated therewith |
SG115578A1 (en) * | 2003-10-28 | 2005-10-28 | Sumitomo Bakelite Singapore Pt | Epoxy resin composition |
SG115579A1 (en) * | 2003-10-28 | 2005-10-28 | Sumitomo Bakelite Singapore Pt | Epoxy resin composition |
-
1992
- 1992-09-24 JP JP04254472A patent/JP3080276B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100251853B1 (en) * | 1996-08-29 | 2000-04-15 | 다니구찌 이찌로오, 기타오카 다카시 | Epoxy resin composition and semiconductor device encapsulated therewith |
SG115578A1 (en) * | 2003-10-28 | 2005-10-28 | Sumitomo Bakelite Singapore Pt | Epoxy resin composition |
SG115579A1 (en) * | 2003-10-28 | 2005-10-28 | Sumitomo Bakelite Singapore Pt | Epoxy resin composition |
Also Published As
Publication number | Publication date |
---|---|
JP3080276B2 (en) | 2000-08-21 |
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