JPH059943B2 - - Google Patents

Info

Publication number
JPH059943B2
JPH059943B2 JP57230990A JP23099082A JPH059943B2 JP H059943 B2 JPH059943 B2 JP H059943B2 JP 57230990 A JP57230990 A JP 57230990A JP 23099082 A JP23099082 A JP 23099082A JP H059943 B2 JPH059943 B2 JP H059943B2
Authority
JP
Japan
Prior art keywords
region
substrate
integrated circuit
current
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57230990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123256A (ja
Inventor
Osamu Shinchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON TEKISASU INSUTSURUMENTSU KK
Original Assignee
NIPPON TEKISASU INSUTSURUMENTSU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON TEKISASU INSUTSURUMENTSU KK filed Critical NIPPON TEKISASU INSUTSURUMENTSU KK
Priority to JP57230990A priority Critical patent/JPS59123256A/ja
Publication of JPS59123256A publication Critical patent/JPS59123256A/ja
Publication of JPH059943B2 publication Critical patent/JPH059943B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57230990A 1982-12-28 1982-12-28 半導体集積回路 Granted JPS59123256A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230990A JPS59123256A (ja) 1982-12-28 1982-12-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230990A JPS59123256A (ja) 1982-12-28 1982-12-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS59123256A JPS59123256A (ja) 1984-07-17
JPH059943B2 true JPH059943B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=16916501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230990A Granted JPS59123256A (ja) 1982-12-28 1982-12-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS59123256A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102765A (ja) * 1984-10-26 1986-05-21 Matsushita Electronics Corp 半導体集積回路装置
JPS61237472A (ja) * 1985-04-15 1986-10-22 Nec Corp 半導体装置
EP0903828A1 (en) * 1997-09-23 1999-03-24 STMicroelectronics S.r.l. Improved device for the protection of an integrated circuit against electrostatic discharges

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068483A (enrdf_load_stackoverflow) * 1973-10-19 1975-06-07

Also Published As

Publication number Publication date
JPS59123256A (ja) 1984-07-17

Similar Documents

Publication Publication Date Title
JP3228583B2 (ja) 半導体集積回路装置
CN1135619C (zh) 带有静电泄放结构的半导体器件
KR0159451B1 (ko) 반도체장치의 보호회로
US4672584A (en) CMOS integrated circuit
JPH09148903A (ja) 半導体装置
KR100243496B1 (ko) 반도체 장치
US4143391A (en) Integrated circuit device
US6215157B1 (en) Electrostatic discharge protection circuit for a semiconductor integrated circuit and layout thereof
KR860000159B1 (ko) 반도체 메모리
US4689653A (en) Complementary MOS integrated circuit including lock-up prevention parasitic transistors
EP0040377A2 (en) Integrated circuit device for writing and reading information
JPH059943B2 (enrdf_load_stackoverflow)
JPS60247959A (ja) ラツチアツプ防止回路
US6084272A (en) Electrostatic discharge protective circuit for semiconductor device
KR940004455B1 (ko) Cmos 반도체 집적 회로 장치
US4868627A (en) Complementary semiconductor integrated circuit device capable of absorbing noise
JPS58130557A (ja) Ｃｍｏｓ装置
JPH044755B2 (enrdf_load_stackoverflow)
KR100223671B1 (ko) 다중 전원전압을 가지는 반도체 메모리 장치
JPH04335570A (ja) 半導体装置
JP2508968B2 (ja) 半導体装置
JP2840239B2 (ja) マスタースライス型半導体装置
JP3010911B2 (ja) 半導体装置
JPH0456465B2 (enrdf_load_stackoverflow)
JP3274561B2 (ja) 半導体集積回路