JPH0588539B2 - - Google Patents

Info

Publication number
JPH0588539B2
JPH0588539B2 JP61193393A JP19339386A JPH0588539B2 JP H0588539 B2 JPH0588539 B2 JP H0588539B2 JP 61193393 A JP61193393 A JP 61193393A JP 19339386 A JP19339386 A JP 19339386A JP H0588539 B2 JPH0588539 B2 JP H0588539B2
Authority
JP
Japan
Prior art keywords
chamber
cleaning
high frequency
frequency power
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61193393A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348832A (ja
Inventor
Shigeru Kawamura
Taro Komya
Naruhito Ibuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP19339386A priority Critical patent/JPS6348832A/ja
Publication of JPS6348832A publication Critical patent/JPS6348832A/ja
Publication of JPH0588539B2 publication Critical patent/JPH0588539B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP19339386A 1986-08-19 1986-08-19 Cvd装置 Granted JPS6348832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19339386A JPS6348832A (ja) 1986-08-19 1986-08-19 Cvd装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19339386A JPS6348832A (ja) 1986-08-19 1986-08-19 Cvd装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29816494A Division JPH0828338B2 (ja) 1994-12-01 1994-12-01 Cvd装置

Publications (2)

Publication Number Publication Date
JPS6348832A JPS6348832A (ja) 1988-03-01
JPH0588539B2 true JPH0588539B2 (cs) 1993-12-22

Family

ID=16307195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19339386A Granted JPS6348832A (ja) 1986-08-19 1986-08-19 Cvd装置

Country Status (1)

Country Link
JP (1) JPS6348832A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0672063B2 (ja) * 1989-07-21 1994-09-14 住友金属鉱山株式会社 耐凍害性に優れた軽量気泡コンクリート
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6274058B1 (en) 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615044A (en) * 1979-07-18 1981-02-13 Toshiba Corp Plasma cleaning method
JPS57134925A (en) * 1981-02-16 1982-08-20 Kokusai Electric Co Ltd Plasma cvd film producer
JPS5846639A (ja) * 1981-09-14 1983-03-18 Hitachi Ltd プラズマ処理装置
JPS58209111A (ja) * 1982-05-31 1983-12-06 Toshiba Corp プラズマ発生装置
JPS60110123A (ja) * 1983-11-18 1985-06-15 Semiconductor Energy Lab Co Ltd 半導体エッチング方法
JPS6167920A (ja) * 1984-09-11 1986-04-08 Ushio Inc 光化学反応装置
JPS6177379A (ja) * 1984-09-21 1986-04-19 Nippon Pillar Packing Co Ltd ガスレ−ザ−管
JPS61216327A (ja) * 1985-03-22 1986-09-26 Hitachi Ltd プラズマ処理方法及び装置
JPS6324826U (cs) * 1986-07-31 1988-02-18

Also Published As

Publication number Publication date
JPS6348832A (ja) 1988-03-01

Similar Documents

Publication Publication Date Title
EP0839586A2 (en) A cleaning apparatus and a cleaning method
JPS6056431B2 (ja) プラズマエツチング装置
KR20180130596A (ko) 플라즈마 프로세싱 챔버에서의 인-시튜 챔버 세정 효율 향상을 위한 플라즈마 처리 프로세스
JPH0653193A (ja) プラズマ反応容器のクリーニングに有用なオゾンを用いた炭素系ポリマー残留物の除去
JPH0831808A (ja) 半導体材料内にトレンチをエッチングする方法及び装置
JPS6240728A (ja) ドライエツチング装置
JPH0588539B2 (cs)
JPH0555184A (ja) クリーニング方法
JPH0897189A (ja) 真空処理装置のクリーニング方法
JPH0828338B2 (ja) Cvd装置
JPS60123032A (ja) プラズマ処理方法および装置
JPH0684851A (ja) プラズマエッチング方法およびプラズマ処理装置
JPH09129596A (ja) 反応室のクリーニング方法
JP3020065B2 (ja) 半導体製造装置の洗浄方法及び半導体製造装置
JPH09289187A (ja) 半導体製造装置
JP3207638B2 (ja) 半導体製造装置のクリーニング方法
JPH0754801B2 (ja) 半導体装置製造装置およびその反応管内部の洗浄方法
JP2948053B2 (ja) プラズマ処理方法
JPS6116524A (ja) ドライエッチング方法
JPH0212818A (ja) プラズマ処理装置の洗浄方法
JPH0992641A (ja) プラズマエッチング装置
JP3265047B2 (ja) ドライエッチング装置
JPH06132249A (ja) 半導体製造装置
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法
JPH0513394A (ja) 基体の膜形成面清浄化方法