JPH0588531B2 - - Google Patents

Info

Publication number
JPH0588531B2
JPH0588531B2 JP61185087A JP18508786A JPH0588531B2 JP H0588531 B2 JPH0588531 B2 JP H0588531B2 JP 61185087 A JP61185087 A JP 61185087A JP 18508786 A JP18508786 A JP 18508786A JP H0588531 B2 JPH0588531 B2 JP H0588531B2
Authority
JP
Japan
Prior art keywords
pattern
optical axis
substrate
projection exposure
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61185087A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342122A (ja
Inventor
Hiroshi Fukuda
Norio Hasegawa
Toshihiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61185087A priority Critical patent/JPS6342122A/ja
Priority to US07/083,211 priority patent/US4869999A/en
Priority to US07/144,065 priority patent/US4904569A/en
Publication of JPS6342122A publication Critical patent/JPS6342122A/ja
Priority to US07/307,513 priority patent/US4937619A/en
Priority to US07/369,150 priority patent/US4992825A/en
Publication of JPH0588531B2 publication Critical patent/JPH0588531B2/ja
Priority to US08/190,580 priority patent/USRE36731E/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP61185087A 1986-08-08 1986-08-08 パタ−ン形成方法 Granted JPS6342122A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP61185087A JPS6342122A (ja) 1986-08-08 1986-08-08 パタ−ン形成方法
US07/083,211 US4869999A (en) 1986-08-08 1987-08-10 Method of forming pattern and projection aligner for carrying out the same
US07/144,065 US4904569A (en) 1986-08-08 1988-01-15 Method of forming pattern and projection aligner for carrying out the same
US07/307,513 US4937619A (en) 1986-08-08 1989-02-08 Projection aligner and exposure method
US07/369,150 US4992825A (en) 1986-08-08 1989-06-21 Method of forming pattern and projection aligner for carrying out the same
US08/190,580 USRE36731E (en) 1986-08-08 1994-02-02 Method of forming pattern and projection aligner for carrying out the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61185087A JPS6342122A (ja) 1986-08-08 1986-08-08 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6342122A JPS6342122A (ja) 1988-02-23
JPH0588531B2 true JPH0588531B2 (enrdf_load_stackoverflow) 1993-12-22

Family

ID=16164601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61185087A Granted JPS6342122A (ja) 1986-08-08 1986-08-08 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6342122A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001038A (en) * 1987-11-16 1991-03-19 Motorola, Inc. Process for photoimaging a three dimensional printed circuit substrate
JP2852169B2 (ja) * 1993-02-25 1999-01-27 日本電気株式会社 投影露光方法および装置
JPH09320921A (ja) * 1996-05-24 1997-12-12 Nikon Corp ベースライン量の測定方法及び投影露光装置
JP3123548B2 (ja) 1998-06-30 2001-01-15 キヤノン株式会社 露光方法及び露光装置
JP6013930B2 (ja) 2013-01-22 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20230122610A (ko) * 2020-12-24 2023-08-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법
CN116954039B (zh) * 2023-09-21 2023-12-08 合肥晶合集成电路股份有限公司 确定光刻工艺窗口的方法、装置、存储介质及电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734541B2 (enrdf_load_stackoverflow) * 1974-08-16 1982-07-23
DE2655525C3 (de) * 1976-12-08 1979-05-03 Ernst Leitz Wetzlar Gmbh, 6300 Lahn- Wetzlar Verfahren zur Erweiterung des Schärfentiefebereiches fiber die durch die konventionelle Abbildung gegebene Grenze hinaus sowie Einrichtung zur Durchführung dieses Verfahrens
US4239790A (en) * 1979-09-12 1980-12-16 Rca Corporation Method of defining a photoresist layer
JPS5817446A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 投影露光方法および装置

Also Published As

Publication number Publication date
JPS6342122A (ja) 1988-02-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term