JPH0587995B2 - - Google Patents
Info
- Publication number
- JPH0587995B2 JPH0587995B2 JP1288869A JP28886989A JPH0587995B2 JP H0587995 B2 JPH0587995 B2 JP H0587995B2 JP 1288869 A JP1288869 A JP 1288869A JP 28886989 A JP28886989 A JP 28886989A JP H0587995 B2 JPH0587995 B2 JP H0587995B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- oxide
- source
- channel
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002887 superconductor Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910002480 Cu-O Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910014454 Ca-Cu Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910003808 Sr-Cu Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288869A JPH03150879A (ja) | 1989-11-08 | 1989-11-08 | 超電導スイッチ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288869A JPH03150879A (ja) | 1989-11-08 | 1989-11-08 | 超電導スイッチ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03150879A JPH03150879A (ja) | 1991-06-27 |
| JPH0587995B2 true JPH0587995B2 (fr) | 1993-12-20 |
Family
ID=17735812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1288869A Granted JPH03150879A (ja) | 1989-11-08 | 1989-11-08 | 超電導スイッチ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03150879A (fr) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63208283A (ja) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | 超伝導素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
-
1989
- 1989-11-08 JP JP1288869A patent/JPH03150879A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63208283A (ja) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | 超伝導素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03150879A (ja) | 1991-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |