JPH0587164B2 - - Google Patents
Info
- Publication number
- JPH0587164B2 JPH0587164B2 JP21677588A JP21677588A JPH0587164B2 JP H0587164 B2 JPH0587164 B2 JP H0587164B2 JP 21677588 A JP21677588 A JP 21677588A JP 21677588 A JP21677588 A JP 21677588A JP H0587164 B2 JPH0587164 B2 JP H0587164B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric
- lower electrode
- tio
- batio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 64
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21677588A JPH0265111A (ja) | 1988-08-30 | 1988-08-30 | 薄膜キャパシタおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21677588A JPH0265111A (ja) | 1988-08-30 | 1988-08-30 | 薄膜キャパシタおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0265111A JPH0265111A (ja) | 1990-03-05 |
| JPH0587164B2 true JPH0587164B2 (ar) | 1993-12-15 |
Family
ID=16693701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21677588A Granted JPH0265111A (ja) | 1988-08-30 | 1988-08-30 | 薄膜キャパシタおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265111A (ar) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04159680A (ja) * | 1990-10-24 | 1992-06-02 | Seiko Instr Inc | 強誘電体薄膜素子 |
| JP2912457B2 (ja) * | 1991-02-01 | 1999-06-28 | 日本板硝子株式会社 | 薄膜コンデンサ |
| US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
| US5933316A (en) * | 1993-08-02 | 1999-08-03 | Motorola Inc. | Method for forming a titanate thin film on silicon, and device formed thereby |
-
1988
- 1988-08-30 JP JP21677588A patent/JPH0265111A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0265111A (ja) | 1990-03-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment |
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| FPAY | Renewal fee payment |
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| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment |
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