JPH05868B2 - - Google Patents

Info

Publication number
JPH05868B2
JPH05868B2 JP57101349A JP10134982A JPH05868B2 JP H05868 B2 JPH05868 B2 JP H05868B2 JP 57101349 A JP57101349 A JP 57101349A JP 10134982 A JP10134982 A JP 10134982A JP H05868 B2 JPH05868 B2 JP H05868B2
Authority
JP
Japan
Prior art keywords
gate
film
gate polysilicon
source
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57101349A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58219765A (ja
Inventor
Hiroaki Ootsuki
Hiroshi Hogen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57101349A priority Critical patent/JPS58219765A/ja
Publication of JPS58219765A publication Critical patent/JPS58219765A/ja
Publication of JPH05868B2 publication Critical patent/JPH05868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57101349A 1982-06-15 1982-06-15 半導体集積回路の製造方法 Granted JPS58219765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57101349A JPS58219765A (ja) 1982-06-15 1982-06-15 半導体集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57101349A JPS58219765A (ja) 1982-06-15 1982-06-15 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS58219765A JPS58219765A (ja) 1983-12-21
JPH05868B2 true JPH05868B2 (en, 2012) 1993-01-06

Family

ID=14298353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57101349A Granted JPS58219765A (ja) 1982-06-15 1982-06-15 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS58219765A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0607658A3 (en) * 1992-11-13 1995-08-30 At & T Corp MOSFET manufacturing.
KR100253372B1 (ko) 1997-12-08 2000-04-15 김영환 반도체 소자 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693370A (en) * 1979-12-26 1981-07-28 Toshiba Corp Manufacture of mos-type semiconductor device
JPS56162874A (en) * 1980-05-20 1981-12-15 Seiko Instr & Electronics Ltd Manufacture of mos semiconductor device

Also Published As

Publication number Publication date
JPS58219765A (ja) 1983-12-21

Similar Documents

Publication Publication Date Title
US5578524A (en) Fabrication process of a semiconductor device with a wiring structure
JPS6242385B2 (en, 2012)
KR100286073B1 (ko) 측벽막을 갖는 mosfet의 제조 방법
JPS5946107B2 (ja) Ｍｉｓ型半導体装置の製造法
JP3398903B2 (ja) 半導体装置の製造方法
JPS6213814B2 (en, 2012)
KR20030030286A (ko) 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
US4030952A (en) Method of MOS circuit fabrication
JPH05868B2 (en, 2012)
JPH07122737A (ja) 半導体装置及びその製造方法
JP4101130B2 (ja) 半導体装置の製造方法
JPS5933271B2 (ja) 半導体装置の製造方法
JPS58132950A (ja) 半導体装置の製造方法
JPH08236475A (ja) コンタクト窓の形成方法
JPS6036111B2 (ja) 半導体装置の製造方法
JPH0217931B2 (en, 2012)
KR950013791B1 (ko) 매립 형태의 콘택 위에 게이트전극 형성방법
JPH0567634A (ja) Ｍｉｓ型半導体装置の製造方法
JPS60103615A (ja) 半導体装置
JPS5858814B2 (ja) 絶縁ゲ−ト半導体装置の製造法
JPS5858770A (ja) 半導体装置の製造方法
JPS6225251B2 (en, 2012)
JPH05129328A (ja) 半導体装置の製造方法
JPH0371771B2 (en, 2012)
JPS5816536A (ja) 半導体装置の製造方法