JPH0574951B2 - - Google Patents

Info

Publication number
JPH0574951B2
JPH0574951B2 JP59214814A JP21481484A JPH0574951B2 JP H0574951 B2 JPH0574951 B2 JP H0574951B2 JP 59214814 A JP59214814 A JP 59214814A JP 21481484 A JP21481484 A JP 21481484A JP H0574951 B2 JPH0574951 B2 JP H0574951B2
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
amorphous silicon
film
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59214814A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6193672A (ja
Inventor
Takeo Fukatsu
Kazuyuki Goto
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59214814A priority Critical patent/JPS6193672A/ja
Publication of JPS6193672A publication Critical patent/JPS6193672A/ja
Publication of JPH0574951B2 publication Critical patent/JPH0574951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP59214814A 1984-10-12 1984-10-12 光起電力装置 Granted JPS6193672A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59214814A JPS6193672A (ja) 1984-10-12 1984-10-12 光起電力装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59214814A JPS6193672A (ja) 1984-10-12 1984-10-12 光起電力装置

Publications (2)

Publication Number Publication Date
JPS6193672A JPS6193672A (ja) 1986-05-12
JPH0574951B2 true JPH0574951B2 (enrdf_load_stackoverflow) 1993-10-19

Family

ID=16661960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59214814A Granted JPS6193672A (ja) 1984-10-12 1984-10-12 光起電力装置

Country Status (1)

Country Link
JP (1) JPS6193672A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195620A (ja) * 2007-02-16 2012-10-11 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法及び光電変換装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829020A (en) * 1987-10-23 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Substrate solder barriers for semiconductor epilayer growth
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
JPH03136283A (ja) * 1989-10-20 1991-06-11 Sanyo Electric Co Ltd 光起電力装置
WO2013065557A1 (ja) * 2011-11-01 2013-05-10 三菱電機株式会社 薄膜太陽電池セルおよびその製造方法、集積型薄膜太陽電池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP60041878B2 (en) * 1979-02-14 1985-09-19 Sharp Kk Thin film solar cell
JPS5857756A (ja) * 1981-10-01 1983-04-06 Agency Of Ind Science & Technol 非晶質太陽電池
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195620A (ja) * 2007-02-16 2012-10-11 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法及び光電変換装置

Also Published As

Publication number Publication date
JPS6193672A (ja) 1986-05-12

Similar Documents

Publication Publication Date Title
US5091764A (en) Semiconductor device having a transparent electrode and amorphous semiconductor layers
US6825409B2 (en) Method for producing solar cells and thin-film solar cell
KR101389546B1 (ko) 표면 패시베이션이 향상된 결정성 실리콘 태양 전지의 제조 방법
JPH05243596A (ja) 積層型太陽電池の製造方法
JPH0577192B2 (enrdf_load_stackoverflow)
US4338482A (en) Photovoltaic cell
JP2003142709A (ja) 積層型太陽電池およびその製造方法
JPH0793447B2 (ja) 光電変換素子
US4922218A (en) Photovoltaic device
JPH0574951B2 (enrdf_load_stackoverflow)
JP2009117463A (ja) 薄膜光電変換装置
JP3025392B2 (ja) 薄膜太陽電池とその製造方法
JPS61141185A (ja) 光起電力素子の製造方法
JP2003101052A (ja) 導電性光反射膜およびその形成方法と太陽電池
JPH0346377A (ja) 太陽電池
JPH0424878B2 (enrdf_load_stackoverflow)
JPS59125669A (ja) 太陽電池
JPH0750794B2 (ja) 光電変換素子の製造方法
JPH0296381A (ja) 半導体装置
JP2975751B2 (ja) 光起電力装置
JPH04133362A (ja) 光起電力装置
JP3358164B2 (ja) 光起電力装置の製造方法
JPH0575153A (ja) 光電変換素子用透明導電膜及びその製造方法
KR930008012Y1 (ko) 비정질 실리콘 태양전지
JPH0456170A (ja) 薄膜太陽電池の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term