JPH0574219B2 - - Google Patents
Info
- Publication number
- JPH0574219B2 JPH0574219B2 JP16016784A JP16016784A JPH0574219B2 JP H0574219 B2 JPH0574219 B2 JP H0574219B2 JP 16016784 A JP16016784 A JP 16016784A JP 16016784 A JP16016784 A JP 16016784A JP H0574219 B2 JPH0574219 B2 JP H0574219B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- pattern
- depositing
- metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 238000001465 metallisation Methods 0.000 claims description 34
- 230000000873 masking effect Effects 0.000 claims description 32
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16016784A JPS6142137A (ja) | 1984-07-30 | 1984-07-30 | 非ネストバイアを有する層状構造物の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16016784A JPS6142137A (ja) | 1984-07-30 | 1984-07-30 | 非ネストバイアを有する層状構造物の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6142137A JPS6142137A (ja) | 1986-02-28 |
| JPH0574219B2 true JPH0574219B2 (enrdf_load_stackoverflow) | 1993-10-18 |
Family
ID=15709300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16016784A Granted JPS6142137A (ja) | 1984-07-30 | 1984-07-30 | 非ネストバイアを有する層状構造物の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6142137A (enrdf_load_stackoverflow) |
-
1984
- 1984-07-30 JP JP16016784A patent/JPS6142137A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6142137A (ja) | 1986-02-28 |
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