JPH0573075B2 - - Google Patents

Info

Publication number
JPH0573075B2
JPH0573075B2 JP59502065A JP50206584A JPH0573075B2 JP H0573075 B2 JPH0573075 B2 JP H0573075B2 JP 59502065 A JP59502065 A JP 59502065A JP 50206584 A JP50206584 A JP 50206584A JP H0573075 B2 JPH0573075 B2 JP H0573075B2
Authority
JP
Japan
Prior art keywords
layer
substrate
channel
solution
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59502065A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60501634A (ja
Inventor
Dan Botetsu
Jon Chaaruzu Konorii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS60501634A publication Critical patent/JPS60501634A/ja
Publication of JPH0573075B2 publication Critical patent/JPH0573075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59502065A 1983-06-17 1984-04-11 平担な活性層を有するレーザ・アレーの製造方法 Granted JPS60501634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50548983A 1983-06-17 1983-06-17
US505489 1983-06-17

Publications (2)

Publication Number Publication Date
JPS60501634A JPS60501634A (ja) 1985-09-26
JPH0573075B2 true JPH0573075B2 (enrdf_load_stackoverflow) 1993-10-13

Family

ID=24010518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59502065A Granted JPS60501634A (ja) 1983-06-17 1984-04-11 平担な活性層を有するレーザ・アレーの製造方法

Country Status (5)

Country Link
EP (1) EP0147417A4 (enrdf_load_stackoverflow)
JP (1) JPS60501634A (enrdf_load_stackoverflow)
CA (1) CA1253608A (enrdf_load_stackoverflow)
IT (1) IT1209541B (enrdf_load_stackoverflow)
WO (1) WO1985000076A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144205B1 (en) * 1983-12-01 1993-03-17 Trw Inc. Semiconductor laser
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61222188A (ja) * 1985-02-28 1986-10-02 Sharp Corp 半導体レ−ザアレイ素子
US4638334A (en) * 1985-04-03 1987-01-20 Xerox Corporation Electro-optic line printer with super luminescent LED source
GB2186115B (en) * 1986-01-31 1989-11-01 Stc Plc Laser array
JPH0232582A (ja) * 1988-07-22 1990-02-02 Oki Electric Ind Co Ltd 集積型半導体レーザとその製造方法
AU2003264786A1 (en) 2002-09-12 2004-04-30 Avanex Corporation Monolithic optical component

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346594B2 (enrdf_load_stackoverflow) * 1974-02-18 1978-12-14
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5534482A (en) * 1978-09-01 1980-03-11 Nec Corp Manufacturing method for semiconductor laser
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4347486A (en) * 1979-10-12 1982-08-31 Rca Corporation Single filament semiconductor laser with large emitting area
US4385389A (en) * 1980-07-14 1983-05-24 Rca Corporation Phase-locked CDH-LOC injection laser array
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS5857771A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体レ−ザ
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back

Also Published As

Publication number Publication date
EP0147417A1 (en) 1985-07-10
WO1985000076A1 (en) 1985-01-03
JPS60501634A (ja) 1985-09-26
EP0147417A4 (en) 1987-07-29
IT8421015A0 (it) 1984-05-21
IT1209541B (it) 1989-08-30
CA1253608A (en) 1989-05-02

Similar Documents

Publication Publication Date Title
EP0935321B1 (en) Surface emission semiconductor laser
CA1242786A (en) Phase-locked semiconductor laser array with integral phase shifters
US5068869A (en) Surface-emitting laser diode
US4215319A (en) Single filament semiconductor laser
US4594719A (en) Phase-locked laser array having a non-uniform spacing between lasing regions
US4547396A (en) Method of making a laser array
JPH0573075B2 (enrdf_load_stackoverflow)
CA1192977A (en) Constricted double heterostructure semiconductor laser
CA1241101A (en) Semiconductor laser having a non-absorbing passive region with beam guiding
US4523316A (en) Semiconductor laser with non-absorbing mirror facet
CA1242788A (en) Phase-locked laser array
US4532631A (en) Semiconductor lasers and method for producing the same
US4791651A (en) Semiconductor laser array device
US4642143A (en) Method of making a double heterostructure laser
US4941148A (en) Semiconductor laser element with a single longitudinal oscillation mode
CA1226659A (en) Double heterostructure laser and a method of making same
GB2027261A (en) Semiconductor laser
JPH03227086A (ja) 半導体レーザ素子及びその製造方法
JPS59229891A (ja) 半導体レ−ザの製造方法
JPS58178583A (ja) 半導体レ−ザ−
KR960014733B1 (ko) 메사패턴이 있는 기판을 이용한 표면방출 반도체 레이저 다이오드 소자의 제조방법
US4358850A (en) Terraced substrate semiconductor laser
JPS5834988A (ja) 半導体レ−ザの製造方法
JPH01215087A (ja) 半導体発光素子
JPS6122478B2 (enrdf_load_stackoverflow)