JPS60501634A - 平担な活性層を有するレーザ・アレーの製造方法 - Google Patents
平担な活性層を有するレーザ・アレーの製造方法Info
- Publication number
- JPS60501634A JPS60501634A JP59502065A JP50206584A JPS60501634A JP S60501634 A JPS60501634 A JP S60501634A JP 59502065 A JP59502065 A JP 59502065A JP 50206584 A JP50206584 A JP 50206584A JP S60501634 A JPS60501634 A JP S60501634A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phase
- substrate
- semiconductor laser
- laser array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000011247 coating layer Substances 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 9
- 239000012071 phase Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000004943 liquid phase epitaxy Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 235000011293 Brassica napus Nutrition 0.000 description 1
- 240000008100 Brassica rapa Species 0.000 description 1
- 235000000540 Brassica rapa subsp rapa Nutrition 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 244000061456 Solanum tuberosum Species 0.000 description 1
- 235000002595 Solanum tuberosum Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50548983A | 1983-06-17 | 1983-06-17 | |
| US505489 | 1983-06-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60501634A true JPS60501634A (ja) | 1985-09-26 |
| JPH0573075B2 JPH0573075B2 (enrdf_load_stackoverflow) | 1993-10-13 |
Family
ID=24010518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59502065A Granted JPS60501634A (ja) | 1983-06-17 | 1984-04-11 | 平担な活性層を有するレーザ・アレーの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0147417A4 (enrdf_load_stackoverflow) |
| JP (1) | JPS60501634A (enrdf_load_stackoverflow) |
| CA (1) | CA1253608A (enrdf_load_stackoverflow) |
| IT (1) | IT1209541B (enrdf_load_stackoverflow) |
| WO (1) | WO1985000076A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0144205B1 (en) * | 1983-12-01 | 1993-03-17 | Trw Inc. | Semiconductor laser |
| JPS6167286A (ja) * | 1984-09-07 | 1986-04-07 | Sharp Corp | 半導体レ−ザアレイ素子 |
| JPS61113293A (ja) * | 1984-11-07 | 1986-05-31 | Sharp Corp | 半導体レ−ザアレイ装置 |
| JPS61222188A (ja) * | 1985-02-28 | 1986-10-02 | Sharp Corp | 半導体レ−ザアレイ素子 |
| US4638334A (en) * | 1985-04-03 | 1987-01-20 | Xerox Corporation | Electro-optic line printer with super luminescent LED source |
| GB2186115B (en) * | 1986-01-31 | 1989-11-01 | Stc Plc | Laser array |
| JPH0232582A (ja) * | 1988-07-22 | 1990-02-02 | Oki Electric Ind Co Ltd | 集積型半導体レーザとその製造方法 |
| WO2004025357A2 (en) * | 2002-09-12 | 2004-03-25 | Avanex Corporation | Monolithic optical component |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534482A (en) * | 1978-09-01 | 1980-03-11 | Nec Corp | Manufacturing method for semiconductor laser |
| JPS5561086A (en) * | 1978-10-30 | 1980-05-08 | Xerox Corp | Monolithic laser device |
| JPS5646593A (en) * | 1979-09-12 | 1981-04-27 | Xerox Corp | Heteroostructure semiconductor laser |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| JPS5857771A (ja) * | 1981-09-30 | 1983-04-06 | Nec Corp | 半導体レ−ザ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5346594B2 (enrdf_load_stackoverflow) * | 1974-02-18 | 1978-12-14 | ||
| US4023993A (en) * | 1974-08-22 | 1977-05-17 | Xerox Corporation | Method of making an electrically pumped solid-state distributed feedback laser |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
| US4385389A (en) * | 1980-07-14 | 1983-05-24 | Rca Corporation | Phase-locked CDH-LOC injection laser array |
| US4373989A (en) * | 1981-11-30 | 1983-02-15 | Beggs James M Administrator Of | Controlled in situ etch-back |
-
1984
- 1984-04-11 EP EP19840901854 patent/EP0147417A4/en not_active Ceased
- 1984-04-11 WO PCT/US1984/000548 patent/WO1985000076A1/en not_active Application Discontinuation
- 1984-04-11 JP JP59502065A patent/JPS60501634A/ja active Granted
- 1984-05-21 IT IT8421015A patent/IT1209541B/it active
- 1984-06-07 CA CA000456052A patent/CA1253608A/en not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534482A (en) * | 1978-09-01 | 1980-03-11 | Nec Corp | Manufacturing method for semiconductor laser |
| JPS5561086A (en) * | 1978-10-30 | 1980-05-08 | Xerox Corp | Monolithic laser device |
| JPS5646593A (en) * | 1979-09-12 | 1981-04-27 | Xerox Corp | Heteroostructure semiconductor laser |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| JPS5857771A (ja) * | 1981-09-30 | 1983-04-06 | Nec Corp | 半導体レ−ザ |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1253608A (en) | 1989-05-02 |
| IT8421015A0 (it) | 1984-05-21 |
| JPH0573075B2 (enrdf_load_stackoverflow) | 1993-10-13 |
| EP0147417A4 (en) | 1987-07-29 |
| WO1985000076A1 (en) | 1985-01-03 |
| EP0147417A1 (en) | 1985-07-10 |
| IT1209541B (it) | 1989-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0935321B1 (en) | Surface emission semiconductor laser | |
| US5068869A (en) | Surface-emitting laser diode | |
| US3996492A (en) | Two-dimensional integrated injection laser array | |
| EP0963017B1 (en) | Semiconductor emission element and method of manufacturing same | |
| US4641311A (en) | Phase-locked semiconductor laser array with integral phase shifters | |
| US4547396A (en) | Method of making a laser array | |
| JPS60501634A (ja) | 平担な活性層を有するレーザ・アレーの製造方法 | |
| US5574304A (en) | Superluminescent diode with offset current injection regions | |
| US4100508A (en) | Semiconductor laser having fundamental lateral mode selectivity | |
| US4723252A (en) | Phase-locked laser array | |
| US4791651A (en) | Semiconductor laser array device | |
| US4815088A (en) | Semiconductor laser array device | |
| GB2178233A (en) | Semiconductor laser array device | |
| JPH0426232B2 (enrdf_load_stackoverflow) | ||
| US5042046A (en) | Semiconductor laser device | |
| US4941148A (en) | Semiconductor laser element with a single longitudinal oscillation mode | |
| JPS6016489A (ja) | 半導体レーザ装置の製造方法 | |
| US4569054A (en) | Double heterostructure laser | |
| US4642143A (en) | Method of making a double heterostructure laser | |
| JPH0449274B2 (enrdf_load_stackoverflow) | ||
| JPS6215879A (ja) | 半導体レ−ザアレイ装置 | |
| US4823353A (en) | Semiconductor laser array apparatus | |
| JPH02180085A (ja) | 半導体レーザ素子の製造方法 | |
| JPS63273388A (ja) | 半導体レ−ザ | |
| US4358850A (en) | Terraced substrate semiconductor laser |