CA1253608A - Phase-locked semiconductor laser array and a method of making same - Google Patents
Phase-locked semiconductor laser array and a method of making sameInfo
- Publication number
- CA1253608A CA1253608A CA000456052A CA456052A CA1253608A CA 1253608 A CA1253608 A CA 1253608A CA 000456052 A CA000456052 A CA 000456052A CA 456052 A CA456052 A CA 456052A CA 1253608 A CA1253608 A CA 1253608A
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- layer
- solution
- channels
- planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000011067 equilibration Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000010355 oscillation Effects 0.000 abstract description 8
- 230000003111 delayed effect Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 29
- 239000000243 solution Substances 0.000 description 23
- 238000000151 deposition Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000004943 liquid phase epitaxy Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DNXHEGUUPJUMQT-UHFFFAOYSA-N (+)-estrone Natural products OC1=CC=C2C3CCC(C)(C(CC4)=O)C4C3CCC2=C1 DNXHEGUUPJUMQT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50548983A | 1983-06-17 | 1983-06-17 | |
| US505,489 | 1983-06-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1253608A true CA1253608A (en) | 1989-05-02 |
Family
ID=24010518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000456052A Expired CA1253608A (en) | 1983-06-17 | 1984-06-07 | Phase-locked semiconductor laser array and a method of making same |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0147417A4 (enrdf_load_stackoverflow) |
| JP (1) | JPS60501634A (enrdf_load_stackoverflow) |
| CA (1) | CA1253608A (enrdf_load_stackoverflow) |
| IT (1) | IT1209541B (enrdf_load_stackoverflow) |
| WO (1) | WO1985000076A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0144205B1 (en) * | 1983-12-01 | 1993-03-17 | Trw Inc. | Semiconductor laser |
| JPS6167286A (ja) * | 1984-09-07 | 1986-04-07 | Sharp Corp | 半導体レ−ザアレイ素子 |
| JPS61113293A (ja) * | 1984-11-07 | 1986-05-31 | Sharp Corp | 半導体レ−ザアレイ装置 |
| JPS61222188A (ja) * | 1985-02-28 | 1986-10-02 | Sharp Corp | 半導体レ−ザアレイ素子 |
| US4638334A (en) * | 1985-04-03 | 1987-01-20 | Xerox Corporation | Electro-optic line printer with super luminescent LED source |
| GB2186115B (en) * | 1986-01-31 | 1989-11-01 | Stc Plc | Laser array |
| JPH0232582A (ja) * | 1988-07-22 | 1990-02-02 | Oki Electric Ind Co Ltd | 集積型半導体レーザとその製造方法 |
| AU2003264786A1 (en) | 2002-09-12 | 2004-04-30 | Avanex Corporation | Monolithic optical component |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5346594B2 (enrdf_load_stackoverflow) * | 1974-02-18 | 1978-12-14 | ||
| US4023993A (en) * | 1974-08-22 | 1977-05-17 | Xerox Corporation | Method of making an electrically pumped solid-state distributed feedback laser |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
| JPS5534482A (en) * | 1978-09-01 | 1980-03-11 | Nec Corp | Manufacturing method for semiconductor laser |
| US4255717A (en) * | 1978-10-30 | 1981-03-10 | Xerox Corporation | Monolithic multi-emitting laser device |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| US4317085A (en) * | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
| US4347486A (en) * | 1979-10-12 | 1982-08-31 | Rca Corporation | Single filament semiconductor laser with large emitting area |
| US4385389A (en) * | 1980-07-14 | 1983-05-24 | Rca Corporation | Phase-locked CDH-LOC injection laser array |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| JPS5857771A (ja) * | 1981-09-30 | 1983-04-06 | Nec Corp | 半導体レ−ザ |
| US4373989A (en) * | 1981-11-30 | 1983-02-15 | Beggs James M Administrator Of | Controlled in situ etch-back |
-
1984
- 1984-04-11 JP JP59502065A patent/JPS60501634A/ja active Granted
- 1984-04-11 EP EP19840901854 patent/EP0147417A4/en not_active Ceased
- 1984-04-11 WO PCT/US1984/000548 patent/WO1985000076A1/en not_active Application Discontinuation
- 1984-05-21 IT IT8421015A patent/IT1209541B/it active
- 1984-06-07 CA CA000456052A patent/CA1253608A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0147417A1 (en) | 1985-07-10 |
| WO1985000076A1 (en) | 1985-01-03 |
| JPS60501634A (ja) | 1985-09-26 |
| JPH0573075B2 (enrdf_load_stackoverflow) | 1993-10-13 |
| EP0147417A4 (en) | 1987-07-29 |
| IT8421015A0 (it) | 1984-05-21 |
| IT1209541B (it) | 1989-08-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 20060502 |