JPH0571668B2 - - Google Patents
Info
- Publication number
- JPH0571668B2 JPH0571668B2 JP23969084A JP23969084A JPH0571668B2 JP H0571668 B2 JPH0571668 B2 JP H0571668B2 JP 23969084 A JP23969084 A JP 23969084A JP 23969084 A JP23969084 A JP 23969084A JP H0571668 B2 JPH0571668 B2 JP H0571668B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electric field
- parallel plate
- field concentration
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005684 electric field Effects 0.000 claims description 22
- 238000001020 plasma etching Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 35
- 238000005530 etching Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23969084A JPS61119686A (ja) | 1984-11-14 | 1984-11-14 | 平行平板型プラズマエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23969084A JPS61119686A (ja) | 1984-11-14 | 1984-11-14 | 平行平板型プラズマエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119686A JPS61119686A (ja) | 1986-06-06 |
| JPH0571668B2 true JPH0571668B2 (enrdf_load_stackoverflow) | 1993-10-07 |
Family
ID=17048463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23969084A Granted JPS61119686A (ja) | 1984-11-14 | 1984-11-14 | 平行平板型プラズマエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119686A (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03181128A (ja) * | 1989-12-11 | 1991-08-07 | Tokyo Electron Ltd | プラズマ装置 |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| US6378907B1 (en) | 1996-07-12 | 2002-04-30 | Mykrolis Corporation | Connector apparatus and system including connector apparatus |
| US6509564B1 (en) | 1998-04-20 | 2003-01-21 | Hitachi, Ltd. | Workpiece holder, semiconductor fabricating apparatus, semiconductor inspecting apparatus, circuit pattern inspecting apparatus, charged particle beam application apparatus, calibrating substrate, workpiece holding method, circuit pattern inspecting method, and charged particle beam application method |
| KR100502268B1 (ko) | 2000-03-01 | 2005-07-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 방법 |
| CN1183993C (zh) | 2000-09-13 | 2005-01-12 | 迈克里斯公司 | 液体过滤设备和方法 |
| US7469932B2 (en) | 2001-09-13 | 2008-12-30 | Entegris, Inc. | Receptor for a separation module |
| EP1448928B1 (en) | 2001-09-13 | 2005-12-28 | Mykrolis Corporation | Separation module |
| US20060037704A1 (en) | 2004-07-30 | 2006-02-23 | Tokyo Electron Limited | Plasma Processing apparatus and method |
| JP2007273718A (ja) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
| JP2013105543A (ja) | 2011-11-10 | 2013-05-30 | Tokyo Electron Ltd | 基板処理装置 |
| CN105190843A (zh) * | 2013-03-15 | 2015-12-23 | 应用材料公司 | 在处理室中使用调节环来调节等离子体分布的装置和方法 |
| US10032608B2 (en) | 2013-03-27 | 2018-07-24 | Applied Materials, Inc. | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground |
| JP6539113B2 (ja) * | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| CN112103163B (zh) * | 2019-06-17 | 2022-06-17 | 北京北方华创微电子装备有限公司 | 下电极装置及相关等离子体系统 |
-
1984
- 1984-11-14 JP JP23969084A patent/JPS61119686A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61119686A (ja) | 1986-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |