JPH0568097B2 - - Google Patents
Info
- Publication number
- JPH0568097B2 JPH0568097B2 JP58145264A JP14526483A JPH0568097B2 JP H0568097 B2 JPH0568097 B2 JP H0568097B2 JP 58145264 A JP58145264 A JP 58145264A JP 14526483 A JP14526483 A JP 14526483A JP H0568097 B2 JPH0568097 B2 JP H0568097B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- plasma
- present
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5134140A Division JP2564753B2 (ja) | 1993-05-13 | 1993-05-13 | プラズマ気相反応方法 |
| JP6284147A Division JP2816943B2 (ja) | 1994-10-25 | 1994-10-25 | プラズマ気相反応方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037118A JPS6037118A (ja) | 1985-02-26 |
| JPH0568097B2 true JPH0568097B2 (sv) | 1993-09-28 |
Family
ID=15381105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58145264A Granted JPS6037118A (ja) | 1983-08-08 | 1983-08-08 | プラズマ気相反応方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037118A (sv) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037119A (ja) * | 1983-08-08 | 1985-02-26 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
| JP2523070B2 (ja) * | 1991-11-22 | 1996-08-07 | 株式会社半導体エネルギー研究所 | プラズマ処理装置 |
| JP2564753B2 (ja) * | 1993-05-13 | 1996-12-18 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応方法 |
| KR20110021654A (ko) | 2009-08-25 | 2011-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 미결정 반도체막의 제조방법, 및 반도체장치의 제조방법 |
| US9177761B2 (en) | 2009-08-25 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
| JPS5842226A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | プラズマ半導体製造装置 |
-
1983
- 1983-08-08 JP JP58145264A patent/JPS6037118A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
| JPS5842226A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | プラズマ半導体製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6037118A (ja) | 1985-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06105691B2 (ja) | 炭素添加非晶質シリコン薄膜の製造方法 | |
| CN106409653B (zh) | 硅纳米线阵列的制备方法 | |
| JPH0568097B2 (sv) | ||
| JP4496401B2 (ja) | プラズマｃｖｄ装置および太陽電池の製造方法 | |
| JP2564748B2 (ja) | プラズマ気相反応装置およびプラズマ気相反応方法 | |
| JPS6331110A (ja) | 半導体装置の製造方法 | |
| JP2816943B2 (ja) | プラズマ気相反応方法 | |
| JP2564753B2 (ja) | プラズマ気相反応方法 | |
| JP2989055B2 (ja) | 太陽電池の製造方法 | |
| JP2540684B2 (ja) | 珪素を主成分とする半導体被膜の作製方法 | |
| JP3274099B2 (ja) | 太陽電池の製造方法 | |
| JP2802747B2 (ja) | プラズマ処理方法 | |
| JPS6039822A (ja) | 薄膜形成装置 | |
| JP2805441B2 (ja) | プラズマ気相反応装置およびプラズマエッチング方法 | |
| JP2649331B2 (ja) | プラズマ処理方法 | |
| JPH0578933B2 (sv) | ||
| JPH0244141B2 (sv) | ||
| JPS58143589A (ja) | シリコン系半導体 | |
| JPS62283899A (ja) | ＩｎＰ単結晶薄膜の製造方法 | |
| JPS61115354A (ja) | 非晶質半導体太陽電池 | |
| JP2739336B2 (ja) | 薄膜形成方法 | |
| JP2649330B2 (ja) | プラズマ処理方法 | |
| JPH05343713A (ja) | 非晶質太陽電池の製造方法 | |
| JPH0586645B2 (sv) | ||
| JPS6050974A (ja) | アモルフアス太陽電池の製造方法 |